Untitled
Abstract: No abstract text available
Text: Four Port Metallic Line Protector Four Port Metallic Line Protector The four-port hybrid Single In-line Package SIP line protector protects multiple twisted pair from overcurrent and overvoltage conditions. Based on a SIP, it is equivalent to four discrete DO-214AA SIDACtor devices and four surface mount fuses. Available in surge
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DO-214AA
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LED1522
Abstract: led constant current driver 500mA 1W led 3.6V EN55015 driver FCC18A
Text: Features LED DRIVER ● ● ● ● ● ● ● ● ● ● ● LIGHTLINE 30W Class II AC-DC LED Power Supply 500mA or 700mA Constant Current Drives 3 - 15 High brightness LEDs Universal AC Input Active Power Factor Correction >0.95 Fused Input, Protected Output
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500mA
700mA
UL-8750
700mA.
RACD30
LED1522
led constant current driver 500mA
1W led 3.6V
EN55015 driver
FCC18A
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IEC 801-3
Abstract: No abstract text available
Text: 95 Type V2 Fused Silicon Pressure Transducer/ Transmitter • True 1% interchangeability from unit to unit – laser trimmed technology • Fused silicon for superior linearity and repeatable performance • Extremely high proof and pressure tolerance • Reverse polarity protected
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4-20mA
10mV/V
64A234
IEC 801-3
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M23269J
Abstract: CYR51 3021 std MIL-C-11272 CYR53 T 3109 001 tc 3086 transistor 3203 CYR10 MIL-C-23269
Text: Glass Capacitors CYR51, 52, 53 Established Reliability M23269/10 (QPL to MIL-PRF-23269) FAILURE RATE LEVEL M M23269J 10-3126 AVX APPLICATIONS M23269J 10-3214 AVX M23269J 10-3327 AVX These precision glass dielectric capacitors are QPL to Established Reliability specification MIL-PRF-23269. Fused
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CYR51,
M23269/10
MIL-PRF-23269)
M23269J
MIL-PRF-23269.
CYR52
M23269/10
CYR53
M23269J
CYR51
3021 std
MIL-C-11272
T 3109 001
tc 3086
transistor 3203
CYR10
MIL-C-23269
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1N5761
Abstract: marking code t1a BUL45 BUL45G MJE210 MPF930 MTP12N10 MTP8P10 MUR105 MUR150
Text: BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Features • Improved Efficiency Due to: ♦ Low Base Drive Requirements (High and Flat DC Current Gain hFE)
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BUL45
O-220AB
21A-09
BUL45/D
1N5761
marking code t1a
BUL45
BUL45G
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
MUR150
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equivalent diode for R2C
Abstract: No abstract text available
Text: PKD 4000 SI 17- 30W DC/DC power modules 48V Input series • Efficiency typ 90% from 30% to full load for 3.3V converter • Output current up to 14A • Meets lead-free soldering processes up to 260°C • Low profile 7.5 mm 0.295 in. • 1500 Vdc isolation voltage
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48/60VDC
SE-126
equivalent diode for R2C
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RHRU5040
Abstract: RHRU5050 RHRU5060
Text: RHRU5040, RHRU5050, RHRU5060 Data Sheet April 1995 File Number 3919.1 50A, 400V - 600V Hyperfast Diodes Features RHRU5040, RHRU5050 and RHRU5060 TA49065 are hyperfast diodes with soft recovery characteristics (tRR < 45ns). They have half the recovery time of ultrafast
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RHRU5040,
RHRU5050,
RHRU5060
RHRU5050
TA49065)
RHRU5040
RHRU5060
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sem 2105
Abstract: 2E12 FSL9110R4 JANSR2N7411 IC SEM 2105 sem 2106
Text: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 2.5A, -100V, rDS ON = 1.30Ω The Discrete Products Operation of Intersil Corporationhas developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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JANSR2N7411
FSL9110R4
-100V,
sem 2105
2E12
FSL9110R4
JANSR2N7411
IC SEM 2105
sem 2106
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g24n60d1d
Abstract: g24n60d G24N60 HGTG24N60D1D AN7254 AN7260 g24n60d1
Text: HGTG24N60D1D 24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package JEDEC STYLE TO-247 • 24A, 600V EMITTER COLLECTOR GATE • Latch Free Operation • Typical Fall Time <500ns COLLECTOR BOTTOM SIDE METAL • Low Conduction Loss
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HGTG24N60D1D
O-247
500ns
150oC.
g24n60d1d
g24n60d
G24N60
HGTG24N60D1D
AN7254
AN7260
g24n60d1
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Untitled
Abstract: No abstract text available
Text: PKL 4316 Series DC/DC converter Input 36-75 Vdc Output 28.2V up to 13A/366W Key Features • THE double P extended Half-brick 61.5x61x12.7 mm 2.42x2.4x0.5 in • Low Output Ripple, 60 mVp-p Typ. • Parallelable with no external components • High efficiency, typ. 90 % at 28.2 Vout
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3A/366W
5x61x12
SE-141
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melcher NSR 128
Abstract: nsr diode negative switching regulator nsr 128 MELCHER 512
Text: NSR-Family Switching Regulators, PCB & Chassis Industrial Environment NSR: Negative Switching Regulators NSR-Family Case C03 No input to output isolation Single output of –5 to –36 V DC/50.288 W Input voltage up to –80 V DC • High efficiency up to 94 %
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DC/50.
128-7iP
melcher NSR 128
nsr diode
negative switching regulator nsr 128
MELCHER 512
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melcher k 4000 converter
Abstract: Melcher M 3000
Text: Rugged Environment Switching Regulators 19" PSS-Family Positive Switching Regulators PSS-Family No input to output isolation Single output of 12, 15, 24, 36 or 48 V DC/108.432 W Input voltage up to 144 V DC • Extremely wide input voltage range • High efficiency up to 96%
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DC/108.
melcher k 4000 converter
Melcher M 3000
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irfu9220
Abstract: irfu9110 la 4001 IRFR9110 IRFR91109A TA17541 TB334
Text: IRFR9110, IRFU9110 Data Sheet 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power
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IRFR9110,
IRFU9110
irfu9220
irfu9110
la 4001
IRFR9110
IRFR91109A
TA17541
TB334
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019N03L
Abstract: BSZ019N03LS
Text: n-Channel Power MOSFET OptiMOS BSZ019N03LS Data Sheet 2.1, 2011-09-21 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSZ019N03LS 1 Description OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together
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BSZ019N03LS
OptiMOSTM30V
726-BSZ019N03LS
019N03L
BSZ019N03LS
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LK5660-7R
Abstract: L3032 LK2000
Text: K Series with PFC Data Sheet 150 – 280 Watt AC-DC Converters Features • RoHS lead-free-solder and lead-solder-exempted products are available. • Class I equipment • • • • Power factor >0.93, harmonics IEC/EN 61000-3-2 Immunity according to IEC/EN 61000-4-2, -3, -4, -5, -6
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BCD20001-G
16-Dec-2010
LK5660-7R
L3032
LK2000
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IRF9540 application
Abstract: IRF9540 mosfet data sheet IRF9540 IRF9540 RF1S9540 RF1S9540SM RF1S9540SM9A TA17521 TB334
Text: IRF9540, RF1S9540SM Data Sheet 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRF9540,
RF1S9540SM
TA17521.
IRF9540 application
IRF9540 mosfet
data sheet IRF9540
IRF9540
RF1S9540
RF1S9540SM
RF1S9540SM9A
TA17521
TB334
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IXUC200N055
Abstract: 123B16
Text: ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC200N055 VDSS = 55 V ID25 = 200 A Ω RDS on = 5.1 mΩ ISOPLUS220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 55 V VGS Continuous
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IXUC200N055
ISOPLUS220TM
220TM
728B1
065B1
123B1
IXUC200N055
123B16
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IRFF9120
Abstract: No abstract text available
Text: IRFF9120 Data Sheet June 1999 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET • 4A, 100V • rDS ON = 0.60Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics Formerly developmental type TA17501.
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IRFF9120
TA17501.
IRFF9120
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Untitled
Abstract: No abstract text available
Text: PKJ 4000 PI DC/DC Power Modules 50-150W • • • • • • • High efficiency 90% Typ @20A Industry standard footprint Max case temperature +100ºC Wide input voltage range according to ETSI specifications High power density, up to 55W/in3 1,500 Vdc isolation voltage
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0-150W
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1591B STK681-332-E Thick-Film Hybrid IC Forward/Reverse Motor Driver Overview The STK681-332-E is a hybrid IC for use in current control forward/reverse DC motor driver with brush. Applications • Office photocopiers, printers, etc. Features
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ENA1591B
STK681-332-E
STK681-332-E
A1591-14/14
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bsc 68e
Abstract: HUF76009P3 HUF76009D3S HUF76009D3ST HUFD76009P3 TB334 71E-1
Text: HUF76009P3, HUF76009D3S TM Data Sheet April 2000 File Number 4861.1 20A, 20V, 0.027 Ohm, N-Channel, Logic Level Power MOSFETs THE HUF76009 is an application-specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low
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HUF76009P3,
HUF76009D3S
HUF76009
HUFD76009P3
O-220AB
47ements
bsc 68e
HUF76009P3
HUF76009D3S
HUF76009D3ST
HUFD76009P3
TB334
71E-1
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5962F9671601VEC
Abstract: 5962F9671601VXC ACTS161HMSR ACTS161MS CDFP4-F16
Text: ACTS161MS Radiation Hardened 4-Bit Synchronous Counter January 1996 Features Pinouts • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96716 and Intersil’s QM Plan 16 PIN CERAMIC DUAL-IN-LINE
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ACTS161MS
MIL-PRF-38535
MIL-STD-1835,
CDIP2-T16,
5962F9671601VEC
5962F9671601VXC
ACTS161HMSR
ACTS161MS
CDFP4-F16
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2SD1092
Abstract: TCS5C
Text: 2SD1092 SILICON NPN TRIPLE DIFFUSED TYPE POWER REGULATOR FOR LINE OPERATED TV. Unit in m m 03.Z±O.2 FEATURES : . Excellent Wide 80 W . S e c Safe Operating Area at Tc=25°C . I n c l u d e d A b a l a n c h e Di o d e : . High DC Current Gain : h F E — 500
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2SD1092
2SD1092
TCS5C
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2SD1294
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SD1294 POWER REGULATOR FOR LINE OPERATED TV. Unit in mm # 3 .2 ± Q 2 FEATURES : . Excellent Wide Safe Operating Area (80 W.s z at Tc=25°C) . eo . Included Abalanche Diode : Vz=60±15V . High DC Current Gain
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2SD1294
2SD1294
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