Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TC5561 Search Results

    TC5561 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC5561J-45 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    TC5561J-45 Toshiba Vintage Memory Datasheet Scan PDF
    TC5561J-45 Toshiba Toshiba Shortform Catalog Scan PDF
    TC5561J-45 Toshiba 65,536 WORD x 1 BIT CMOS STATIC RAM Scan PDF
    TC5561J-55 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    TC5561J-55 Toshiba Vintage Memory Datasheet Scan PDF
    TC5561J-55 Toshiba Toshiba Shortform Catalog Scan PDF
    TC5561J-55 Toshiba 65,536 WORD x 1 BIT CMOS STATIC RAM Scan PDF
    TC5561J-70 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    TC5561J-70 Toshiba Vintage Memory Datasheet Scan PDF
    TC5561J-70 Toshiba Toshiba Shortform Catalog Scan PDF
    TC5561J-70 Toshiba 65,536 WORD x 1 BIT CMOS STATIC RAM Scan PDF
    TC5561P-45 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    TC5561P-45 Toshiba 65,536 WORD x 1 BIT CMOS STATIC RAM Scan PDF
    TC5561P-45 Toshiba Vintage Memory Datasheet Scan PDF
    TC5561P-45 Toshiba Toshiba Shortform Catalog Scan PDF
    TC5561P-55 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    TC5561P-55 Toshiba 65,536 WORD x 1 BIT CMOS STATIC RAM Scan PDF
    TC5561P-55 Toshiba Vintage Memory Datasheet Scan PDF
    TC5561P-55 Toshiba Toshiba Shortform Catalog Scan PDF

    TC5561 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TA053-059-41-38

    Abstract: No abstract text available
    Text: TA053-059-41-38 REV1_20040412 5.3 – 5.9 GHz 8W Amplifier FEATURES • P-1 dB: 39 dBm • Noise Figure: 4.5 dB • IP3: 48 dBm • Bias Condition: 4700 mA @ 12 V • Small Signal Gain: 41 dB DESCRIPTION The TA053-059-41-38 is an 8W power amplifier designed for high linearity applications in the 5.3 to 5.9 GHz


    Original     		TA053-059-41-38 TA053-059-41-38 TC5561K. PDF

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G PDF

    5.9 GHz power amplifier

    Abstract: TA053-059-22-10
    Text: TA053-059-22-10 REV1_20040412 5.3 – 5.9 GHz Low Noise Amplifier FEATURES • P-1 dB: 10 dBm • Noise Figure: 1 dB • IP3: 20 dBm • Bias Condition: 90 mA @ 12 V • Small Signal Gain: 22 dB DESCRIPTION The TA053-059-22-10 is a low noise amplifier designed for applications in the 5.3 to 5.9 GHz frequency


    Original     		TA053-059-22-10 TA053-059-22-10 TC5561G. 5.9 GHz power amplifier PDF

    TA053-059-38-36

    Abstract: No abstract text available
    Text: TA053-059-38-36 REV1_20040412 5.3 – 5.9 GHz 4 W Amplifiers FEATURES • P-1 dB: 36 dBm • Noise Figure: 4.5 dB • IP3: 44 dBm • Bias Condition: 2400 mA @ 12 V • Small Signal Gain: 38 dB DESCRIPTION The TA053-059-38-36 is a 4 W power amplifier designed for high linearity applications in the 5.3 to 5.9


    Original     		TA053-059-38-36 TA053-059-38-36 TC5561J. PDF

    TA053-059-35-33

    Abstract: No abstract text available
    Text: TA053-059-35-33 REV1_20040412 5.3 – 5.9 GHz 2W Amplifier FEATURES • P-1 dB: 33 dBm • Noise Figure: 4.5 dB • IP3: 41 dBm • Bias Condition: 1200 mA @ 12 V • Small Signal Gain: 35 dB DESCRIPTION The TA053-059-35-33 is a 2 W power amplifier designed for high linearity applications in the 5.3 to 5.9 GHz


    Original     		TA053-059-35-33 TA053-059-35-33 TC5561I. PDF

    TOSHIBA J55

    Abstract: No abstract text available
    Text: TOSHIBA MOS MEMORY PRODUCTS TC5561P/J-45, TC5561P/J-55, TC5561P/J-70 [DESCRIPTION] The TC5561P/J is a 65,536 bit high speed static random access memory organized as 65,536 words by 1 bit using CMOS technology, and operated from a single 5-volt supply, Toshiba's high performance device technology provides both high speed and low power


    OCR Scan     		TC5561P/J-45, TC5561P/J-55, TC5561P/J-70 TC5561P/J 45ns/55ns/70ns 100mA TOSHIBA J55 PDF

    Untitled

    Abstract: No abstract text available
    Text: 65,536 WORD x 1 BIT CMOS STATIC RAM [DESCRIPTION] The TC5561P/J is a 6 5 ,5 3 6 b it high, speed, sta tic random a ccess m em ory organ ized as 6 5 ,5 3 6 w ords by 1 bit u sin g CMOS technology, and op erates from a sin g le 5-volt supply. T oshiba’s h ig h


    OCR Scan     		TC5561P/J TC5561P/Jâ DIP22-P-300) PDF

    TC5561P-55

    Abstract: TC5561 TC5561J-55
    Text: 65,536 WORD x 1 BIT CMOS STATIC RAM [d e s c r i p t i o n ! The TC5561P/J is a 65,536 bit high speed static random access memory organized as 65,536 words by 1 bit using CMOS technology, and operates from a single 5-volt supply. Toshiba’s high perform ance device technology provides both high speed and low power features w ith a maximum


    OCR Scan     		TC5561P/J 45ns/55ns/70ns 100mA TC6561P/J TC5561P TC5561P-55 TC5561P-70 TC5561P/J-- TC5561 TC5561J-55 PDF

    IMS1630

    Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
    Text: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68


    OCR Scan     		AM2147 AM2148/9 AM2167 AM2168 AM9126 AM99C68 AM99C88 AM99C89 AM67C4501 AM67C4502 IMS1630 HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501 PDF

    STATIC RAM 8464

    Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
    Text: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)


    OCR Scan     		L7C167 L7C168 L7C170 L7C171 L7C172 L6116/ L6116L L7C183 CY7C183 L7C184 STATIC RAM 8464 IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram PDF

    UPD4361C-70

    Abstract: UPD4361C-55 TMS6287-45 P4C187L-10 P4C187L-12 P4C187L-15 P4C187L-20 P4C187L-25 P4C187L-30 P4C187L-35
    Text: 67 4 K * m. tt ft ft CC TAAC max ns) TCAC max (ns) TOE max (ns) a CMOS 7 f S t a t i c y / íí TOH min (ns) TOD max (ns) RAM ( 6 5 5 3 6 x 1 ) « tt TWP min (ns) T5S min (ns) TDH min (ns) TWD min (ns) TWR max (ns) V!)D or V C C (V) 2 2 P I N m I DD max


    OCR Scan     		UPD4361BCR/LA-12 UPD4361BCR/LA-15 UPM361BC UPD4361C-45 UPD4361C-55 UPD4361C-70 UPD4361G-45 UPD4361G-45L UPD4361G-55 UPD4361G-55L TMS6287-45 P4C187L-10 P4C187L-12 P4C187L-15 P4C187L-20 P4C187L-25 P4C187L-30 P4C187L-35 PDF

    TC5561P-55

    Abstract: TC5561 TC5561J-45 tc5561j-55 TC5561P-45 A4518 DIN 5901
    Text: 65,536 WORD x 1 BIT CMOS STATIC RAM [DESCRIPTION The TC 5561P/J is a 65,536 b it high, speed s ta tic ran d o m access m em ory o rg an ized as 65,536 w ords by 1 b it u sin g CMOS technology, an d o p erate s from a sin g le 5-volt supply. T o sh ib a’s h ig h


    OCR Scan     		TC5561P/J 45ns/55ns/70ns 100mA TC5561P DIP22-P-300) TC5561P/J--45, TC5561P/Jâ TC5561P-55 TC5561 TC5561J-45 tc5561j-55 TC5561P-45 A4518 DIN 5901 PDF