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    TC59S1608 Search Results

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    TC59S1608 Price and Stock

    Toshiba America Electronic Components TC59S1608AFT-10

    SDRAM, 2M x 8, 44 Pin, Plastic, TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC59S1608AFT-10 330
    • 1 $6
    • 10 $6
    • 100 $3.7
    • 1000 $3.3
    • 10000 $3.3
    		Buy Now
    TC59S1608AFT-10 89
    • 1 $6
    • 10 $3
    • 100 $2.6
    • 1000 $2.6
    • 10000 $2.6
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    TC59S1608 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC59S1616AFT

    Abstract: TC59S1616AFT-10 TC59S1616 TC59S1608AFT-10 TC59S1608 tc59s1608aft TC59S1616AFT10 TC59S1616AFT-1 tras 36ns TC59S1604AFT
    Text: TOSHIBA TC59S1616AFT-10, -12 TC59S1608AFT-10, -12 TC59S1604AFT-10, -12 PRELIMINARY 524,288 WORDS X 2 BANK X 16 BITS 1,048,576 WORDS X 2 BANK X 8 BITS 2,097,152 WORDS X 2 BANK X 4 BITS SYNCHRONOUS DRAM Description TC59S1616AFT is a CMOS synchronous dynamic random access memory organized as 524,288-words x2-banks x16-bits and


    Original     		PDF TC59S1616AFT-10, TC59S1608AFT-10, TC59S1604AFT-10, TC59S1616AFT 288-words x16-bits TC59S1608AFT 576-words andTC59S1604FT 100M-words TC59S1616AFT-10 TC59S1616 TC59S1608AFT-10 TC59S1608 TC59S1616AFT10 TC59S1616AFT-1 tras 36ns TC59S1604AFT

    Untitled

    Abstract: No abstract text available
    Text: TC59S1608FT-12 1/2 IL11 * C-MOS 16 M (1,048,576x8x2)-BIT SYNCHRONOUS DYNAMIC RAM - TOP VIEW 17 1 VDD (+3.3 V) GND 44 DQ0 I/O 2 27 GNDQ 42 DQ1 I/O 4 26 25 41 DQ6 I/O VDDQ VDDQ (+3.3 V) (+3.3 V) DQ2 I/O 6 24 40 21 20 39 DQ5 I/O 7 GNDQ 19 GNDQ 38 DQ3 I/O 8


    Original     		PDF TC59S1608FT-12 576x8x2 2048x512x8

    tc59s1608

    Abstract: No abstract text available
    Text: TOSHIBA TC59S1608FT-10/12 TC59S1604FT-10/12 1,048,576 WORD X 2 BANK X 8 BIT /2,097,152 WORD X 2 BANK X 4 BIT SYNCHRONOUS DRAM Description TC59S1608FT is a CMOS synchronous dynamic random access memory organized as 1,048,576-words x2-banks x8-bits and TC59S1604FT organized as 2,097,152 words x2-banks x4-bits. Fully synchronous operations are referenced at the positive edges of


    Original     		PDF TC59S1608FT-10/12 TC59S1604FT-10/12 TC59S1608FT 576-words TC59S1604FT TC59S1608FT, tc59s1608

    toshiba a10 motherboard

    Abstract: P16R8 TC59S1608AFT-10 Toshiba Motherboard GAL16LV8D GAL16LV8D-3LJ MC952 MOTOROLA LSC
    Text: Interfacing SDRAMs to Pentium Processors with 3.3V GAL Devices Introduction Design Implementation The blistering speed of today’s leading-edge microprocessors necessitates the use of new memory and logic technologies. To keep up with the operating frequencies


    Original     		PDF P54C-100/66 toshiba a10 motherboard P16R8 TC59S1608AFT-10 Toshiba Motherboard GAL16LV8D GAL16LV8D-3LJ MC952 MOTOROLA LSC

    toshiba a10 motherboard

    Abstract: MOTOROLA LSC LSC motorola tc59s1608aft Toshiba Motherboard GAL16LV8D GAL16LV8D-3LJ MC952 P16R8 TC59S1608AFT-10
    Text: Interfacing SDRAMs to Pentium Processors with 3.3V GAL Devices Introduction Design Implementation The blistering speed of today’s leading-edge microprocessors necessitates the use of new memory and logic technologies. To keep up with the operating frequencies


    Original     		PDF P54C-100/66 toshiba a10 motherboard MOTOROLA LSC LSC motorola tc59s1608aft Toshiba Motherboard GAL16LV8D GAL16LV8D-3LJ MC952 P16R8 TC59S1608AFT-10

    KM416S4030BT-G10

    Abstract: KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821
    Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


    Original     		PDF PC100 KM416S4030BT-G10 KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821

    Asus PC MOTHERBOARD CIRCUIT MANUAL

    Abstract: cwt 235 atx FSP250-61gn acer motherboard jumper settings D4516821AG5 fsp300 Atx-1125b ATX 235 KEYTRONIC d4564163g5
    Text: A Guide to Building a PC with an AMD Athlon Processor TM Publication # 22914 Issue Date: September 1999 Rev: B 1999 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or warranties with


    Original     		PDF 22914B/0--September Asus PC MOTHERBOARD CIRCUIT MANUAL cwt 235 atx FSP250-61gn acer motherboard jumper settings D4516821AG5 fsp300 Atx-1125b ATX 235 KEYTRONIC d4564163g5

    hy57v16801

    Abstract: KM48S2020 FCT3932 KM44S4020 nec 44pin AN-156 FCT163501 KM48S HY57V16401-10 DIMM 72 pin out
    Text: 2M/4M x 72 SYNCHRONOUS DRAM DIMM REFERENCE DESIGN APPLICATION NOTE AN-156 Integrated Device Technology, Inc. By Anupama Hegde INTRODUCTION DESIGN KIT CONTENTS Expectations of main memory performance have finally reached a point that calls for the use of synchronous DRAMs.


    Original     		PDF AN-156 200pin 4Mx72 A0-11 DQ0-72 hy57v16801 KM48S2020 FCT3932 KM44S4020 nec 44pin AN-156 FCT163501 KM48S HY57V16401-10 DIMM 72 pin out

    toshiba a10 motherboard

    Abstract: TC59S1608AFT-10 P16R8 AN-9001 sdram pentium GAL16LV8D GAL16LV8D-3LJ MC952 tc59s1608aft intel pentium microprocessor
    Text: Interfacing SDRAMs to Pentium Processors with 3.3V GAL Devices Introduction Design Implementation The blistering speed of today’s leading-edge microprocessors necessitates the use of new memory and logic technologies. To keep up with the operating frequencies


    Original     		PDF P54C-100/66 P16R8' toshiba a10 motherboard TC59S1608AFT-10 P16R8 AN-9001 sdram pentium GAL16LV8D GAL16LV8D-3LJ MC952 tc59s1608aft intel pentium microprocessor

    IBM025161LG5D60

    Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
    Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.


    Original     		PDF MB81141621 MB81141622 MB81G8322 MB81116421 TC59R1608 2ns500MHz TC59R0808 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT

    gm72v661641ct7j

    Abstract: motherboard ic list d4564163g5 D4516821AG5 TC59S1608AFT-10 v54c365804vbt8pc GM72v66841ct7j D4564841g5 GM72V66841CT-7J D4564841G5-A10B-9JF
    Text: Microstar MSI Motherboard Memory Recommendations December 15, 1999 Microstar Motherboard Recommended Memory List (Revised 08-06-99) Manufacturer Model Number (IC Part Number) Type Size Fujitsu (BUFFALO) 81F16822D-102LFN (ECC) SDRAM 32MB LGS (Apacer) GM72V661641CTJ7


    Original     		PDF 81F16822D-102LFN GM72V661641CTJ7 MT48LC4M16A2TG-8C D4516821AG5-A10-7JF KM48S2020CT-GH TMS626812BDGE5H-8 TC59S1608AFT-10 HM5264165TTB60 HM5264805TTB60 gm72v661641ct7j motherboard ic list d4564163g5 D4516821AG5 TC59S1608AFT-10 v54c365804vbt8pc GM72v66841ct7j D4564841g5 GM72V66841CT-7J D4564841G5-A10B-9JF

    KM48S8030BT-GL

    Abstract: NT56V1680A0T D4516821AG5 KM416S4030BT-GL 81f641642b103fn KM48S2020CT-GL D4516821AG5-A107JF gm72v661641ct7j TC59S6408BFT80 D4564163G5
    Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


    Original     		PDF PC100 KM48S8030BT-GL NT56V1680A0T D4516821AG5 KM416S4030BT-GL 81f641642b103fn KM48S2020CT-GL D4516821AG5-A107JF gm72v661641ct7j TC59S6408BFT80 D4564163G5

    toshiba a10 motherboard

    Abstract: TC59S1608AFT-10 GAL16LV8D GAL16LV8D-3LJ MC952 P54C
    Text: Interfacing SDRAMs to Pentium Processors with 3.3V GAL Devices Introduction Design Implementation The blistering speed of today’s leading-edge microprocessors necessitates the use of new memory and logic technologies. To keep up with the operating frequencies


    Original     		PDF P54C-100/66 P16R8' toshiba a10 motherboard TC59S1608AFT-10 GAL16LV8D GAL16LV8D-3LJ MC952 P54C

    Untitled

    Abstract: No abstract text available
    Text: •^□^7240 Q02SGÜS 41G « T O S E TOSHIBA TOSHIBA LOGIC/MEMORY TC59S1604 TC59S1608 b^E » t a r g e t s il ic o n g a t e c m o s s p e c 2,097,152 BY 8 BIT SYNCHRONOUS DRAM DESCRIPTION The TC59S1604/1608 is a JEDEC-standard synchronous DRAM (SDRAM) using a single 3.3Part -volt


    OCR Scan     		PDF Q02SGÃ TC59S1604 TC59S1608 TC59S1604/1608

    TC59S1604

    Abstract: TC59S1608
    Text: TOSHIBA TC59S1604 TC59S1608 SILICON GATE c m o s 2,097,152 BY 8 BIT SYNCHRONOUS DRAM t a r g e t DESCRIPTION The T C 59S 1604/1608 is a JEDEC-standard synchronous DRAM SDRAM using a single 3.3Part -volt pow er supply. Various operational m odes can be initiated by controlling the state o f the RAS, CAS, W E, CS,


    OCR Scan     		PDF TC59S1604 TC59S1608 TC59S1608 TC59S1604,

    TC59S1608AFT-10

    Abstract: TC59S1608AFT10 TC59S1616AFT-1 TC59S1616AFT10 TC59S1616
    Text: ! TOSHIBA TC59S1616AFT-10, -12 TC59S1608AFT-10, -12 TC59S1604AFT-10, -12 PRELIMINARY 524,288 WORDS X 2 BANK X 16 BITS 1,048,576 WORDS X 2 BANK X 8 BITS 2,097,152 WORDS X 2 BANK X 4 BITS SYNCHRONOUS DRAM Description TC59S1616AFT is a CMOS synchronous dynamic random access memory organized as 524,288-words x2-banks x16-bits


    OCR Scan     		PDF TC59S1616AFT-10, TC59S1608AFT-10, TC59S1604AFT-10, TC59S1616AFT 288-words x16-bits TC59S1608AFT 576-words andTC59S1604FT 10OM-words TC59S1608AFT-10 TC59S1608AFT10 TC59S1616AFT-1 TC59S1616AFT10 TC59S1616

    TC59S1616

    Abstract: TC59S1616AFT TC59S1608AF
    Text: T O S H IB A TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-WORD X 2 BANK X 16-BIT SYNCHRONOUS DYNAMIC RAM 1,048,576-WORDx2 BANKx8-BIT SYNCHRONOUS DYNAMIC RAM


    OCR Scan     		PDF TC59S1616AFT-8 TC59S1608AFT-8 TC59S1604AFT-8 288-WORD 16-BIT 576-WORDx2 TC59S1616AFT, TC59S1608AFT TC59S1604AFT TC59S1616 TC59S1616AFT TC59S1608AF

    THMY642051AEG10

    Abstract: MY642051 14V aeg aeg t 133
    Text: TOSHIBA THMY642051 AEG-10,-12A,-12 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 2,097,152 W O RD Sx 64 BITS SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY642051AEG is a 2,097,152 words by 64 bits Synchronous DRAM module which assembled 8 pcs of TC59S1608AFT on the printed circuit board.


    OCR Scan     		PDF THMY642051 AEG-10 THMY642051AEG TC59S1608AFT 484mW -10/12A) 208mW 80MAX. THMY642051AEG10 MY642051 14V aeg aeg t 133

    THMY6420B1AEG

    Abstract: aeg tt THMY6420B1AEG10
    Text: TOSHIBA TH MY6420B1 AEG-10,-12A,-12 TENTATIVE .TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 2,097,152 W O RD Sx 64 BITS SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6420B1AEG is a 2,097,152 words by 64 bits Synchronous DRAM module which assembled 8 pcs of TC59S1608AFT on the printed circuit board.


    OCR Scan     		PDF MY6420B1 AEG-10 THMY6420B1AEG TC59S1608AFT 484mW -10/12A) 208mW THMY6420B1AEG-10 THMY6420B1AEG H1111111h1111in aeg tt THMY6420B1AEG10

    THMY644041AEG10

    Abstract: 99 0609 00 04 THMY644041AEG THMY644041 aeg t 133 aeg tt
    Text: TOSHIBA TH M Y644041A EG -10,-12A.-12 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304 W O R D S x 64 BITS SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY644041AEG is a 4,194,304 words by 64 bits Synchronous DRAM module which assembled 16 pcs of TC59S1608AFT with Unbuffer on the printed circuit board.


    OCR Scan     		PDF Y644041A THMY644041AEG TC59S1608AFT 100ns 120ns THMY644041AEG 54MIN. 25MAX. THMY644041AEG10 99 0609 00 04 THMY644041 aeg t 133 aeg tt

    VG264265B

    Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
    Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D


    OCR Scan     		PDF 256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference

    TC59R1809

    Abstract: No abstract text available
    Text: High Speed Dynamic RAM Rambus DRAM Capacity Type No. Data Transfer Rats ns Organization Max Min Hit Latency (ns) Read Writs Power Power Supply (V) Dissipation (mW) No. of Pins 4.5MBit ‘ TC59R0409VK 524,288 x 9 2 5 48 16 5V±10% 1325 32 18MBit "TC59R1809VK


    OCR Scan     		PDF 18MBit TC59R0409VK TC59R1809VK TC85RT000VK SVP32 SVP42 TC59S1604FT/FTL-10 TC59S1604FT/FTL-12 C59S1608FT/FTL-10 TC59S1608FT/FTL-12 TC59R1809

    Untitled

    Abstract: No abstract text available
    Text: _ _ • TOSHIBA ^0^7240 DD2öb3S 315 T C 5 9 S 1 6 1 6 A F T -1 0 , -1 2 T C 5 9 S 1 6 0 8 A F T -1 0 , -12 T C 5 9 S 1 6 0 4 A F T -1 0 , -12 PRELIMINARY 524,288 WORDS X 2 BANK X 16 BITS 1,048,576 WORDS X 2 BANK X 8 BITS 2,097,152 WORDS X 2 BANK X 4 BITS SYNCHRONOUS DRAM


    OCR Scan     		PDF TC59S1616AFT 288-words x16-bits TC59S1608AFT 576-words andTC59S1604FT 100M-words SD16010496 TC59S1616AFT, TC59S1608AFT,

    THMY6440A1AEG10

    Abstract: M8A010 D036
    Text: T O S H IB A TH M Y 6440A 1A EG -10,-12A,-12 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 4,194,304 W O R D S x 64 BITS SY N CH RO N O U S D R A M M O D U LE DESCRIPTION The THMY6440A1AEG is a 4,194,304 words by 64 bits Synchronous DRAM module which assembled


    OCR Scan     		PDF THMY6440A1AEG TC59S1608AFT 312mW 257mW 981mW THMY6440A1AEG-10 THMY6440A1AEG 54MIN. THMY6440A1AEG10 M8A010 D036