Untitled
Abstract: No abstract text available
Text: TC59S1608FT-12 1/2 IL11 * C-MOS 16 M (1,048,576x8x2)-BIT SYNCHRONOUS DYNAMIC RAM - TOP VIEW 17 1 VDD (+3.3 V) GND 44 DQ0 I/O 2 27 GNDQ 42 DQ1 I/O 4 26 25 41 DQ6 I/O VDDQ VDDQ (+3.3 V) (+3.3 V) DQ2 I/O 6 24 40 21 20 39 DQ5 I/O 7 GNDQ 19 GNDQ 38 DQ3 I/O 8
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TC59S1608FT-12
576x8x2
2048x512x8
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tc59s1608
Abstract: No abstract text available
Text: TOSHIBA TC59S1608FT-10/12 TC59S1604FT-10/12 1,048,576 WORD X 2 BANK X 8 BIT /2,097,152 WORD X 2 BANK X 4 BIT SYNCHRONOUS DRAM Description TC59S1608FT is a CMOS synchronous dynamic random access memory organized as 1,048,576-words x2-banks x8-bits and TC59S1604FT organized as 2,097,152 words x2-banks x4-bits. Fully synchronous operations are referenced at the positive edges of
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TC59S1608FT-10/12
TC59S1604FT-10/12
TC59S1608FT
576-words
TC59S1604FT
TC59S1608FT,
tc59s1608
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hy57v16801
Abstract: KM48S2020 FCT3932 KM44S4020 nec 44pin AN-156 FCT163501 KM48S HY57V16401-10 DIMM 72 pin out
Text: 2M/4M x 72 SYNCHRONOUS DRAM DIMM REFERENCE DESIGN APPLICATION NOTE AN-156 Integrated Device Technology, Inc. By Anupama Hegde INTRODUCTION DESIGN KIT CONTENTS Expectations of main memory performance have finally reached a point that calls for the use of synchronous DRAMs.
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AN-156
200pin
4Mx72
A0-11
DQ0-72
hy57v16801
KM48S2020
FCT3932
KM44S4020
nec 44pin
AN-156
FCT163501
KM48S
HY57V16401-10
DIMM 72 pin out
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Untitled
Abstract: No abstract text available
Text: •^□^7240 Q02SGÜS 41G « T O S E TOSHIBA TOSHIBA LOGIC/MEMORY TC59S1604 TC59S1608 b^E » t a r g e t s il ic o n g a t e c m o s s p e c 2,097,152 BY 8 BIT SYNCHRONOUS DRAM DESCRIPTION The TC59S1604/1608 is a JEDEC-standard synchronous DRAM (SDRAM) using a single 3.3Part -volt
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Q02SGÃ
TC59S1604
TC59S1608
TC59S1604/1608
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC59S1604 TC59S1608 SILICON GATE c m o s 2,097,152 BY 8 BIT SYNCHRONOUS DRAM t a r g e t s p e c DESCRIPTION The TC59S1604/1608 is a JEDEC-standard synchronous DRAM SDRAM using a single 3.3Part -volt pow er supply. Various operational m odes can be initiated by controlling the state o f the RAS, CAS, W E. CS.
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TC59S1604
TC59S1608
TC59S1604/1608
TC59S1608FT/TR-12
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TC59R1809
Abstract: No abstract text available
Text: High Speed Dynamic RAM Rambus DRAM Capacity Type No. Data Transfer Rats ns Organization Max Min Hit Latency (ns) Read Writs Power Power Supply (V) Dissipation (mW) No. of Pins 4.5MBit ‘ TC59R0409VK 524,288 x 9 2 5 48 16 5V±10% 1325 32 18MBit "TC59R1809VK
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18MBit
TC59R0409VK
TC59R1809VK
TC85RT000VK
SVP32
SVP42
TC59S1604FT/FTL-10
TC59S1604FT/FTL-12
C59S1608FT/FTL-10
TC59S1608FT/FTL-12
TC59R1809
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