SLAU056
Abstract: SLAA222 MSP430 SLAA288 TCI diode Code Example for MSP430x4xx SIF1
Text: Application Report SLAA321 – August 2006 MSP430FW42x Scan Interface SIFDACR Calibration Robert Sabolovic . MSP430 - Advanced Embedded Controls ABSTRACT With this document, the user will become familiar with the features implemented in the
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SLAA321
MSP430FW42x
MSP430
SLAU056
SLAA222
SLAA288
TCI diode
Code Example for MSP430x4xx
SIF1
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TFT panel power supply
Abstract: No abstract text available
Text: AT1731 Preliminary Product Information DC-DC Power IC for TFT Panel Feature • 2.6V to 5.5V Supply Voltage Operating Range. • 1.2MHz Fixed Switching Frequency. • Current-Mode PWM Step-Up Regulator • • • • • • • • Description The AT1731 DC-DC converter supply a compact and
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AT1731
AT1731
350mm3
350mm3
TFT panel power supply
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iron constantan temperature sensor
Abstract: ULN2003A ULN2068B
Text: Technical Paper TP 80-2 GENERAL INFORMATION THERMAL RESISTANCE— A RELIABILITY CONSIDERATION by Kenneth E. Manchester & Donald W. Bird More and more the semiconductor component supplier and the ultimate system user are becoming aware of the need for reliable
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TP72-7,
79CH1425-8
iron constantan temperature sensor
ULN2003A
ULN2068B
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type k thermocouple input characteristics profile
Abstract: thermal resistance Thermocouple circuit type t Thermocouple Type K material TCI model 571 electronic oven control oven temperature sensors transistor subtitution ULN2003A ULN2068B
Text: THERMAL RESISTANCE— A RELIABILITY CONSIDERATION by Kenneth E. Manchester & Donald W. Bird More and more the semiconductor component supplier and the ultimate system user are becoming aware of the need for reliable components. Most failure mechanisms responsible for reliability
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TP72-7,
79CH1425-8
type k thermocouple input characteristics profile
thermal resistance
Thermocouple circuit type t
Thermocouple Type K material
TCI model 571
electronic oven control
oven temperature sensors
transistor subtitution
ULN2003A
ULN2068B
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ULN2003A
Abstract: ULN2068B
Text: THERMAL RESISTANCE— A RELIABILITY CONSIDERATION by Kenneth E. Manchester & Donald W. Bird More and more the semiconductor component supplier and the ultimate system user are becoming aware of the need for reliable components. Most failure mechanisms responsible for reliability
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TP72-7,
79CH1425-8
ULN2003A
ULN2068B
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oven temperature sensors
Abstract: thermal resistance measurement ULN2003A ULN2068B ALLEGRO MICROSYSTEMS
Text: APPLICATIONS INFORMATION THERMAL RESISTANCE— A RELIABILITY CONSIDERATION THERMAL RESISTANCE— A RELIABILITY CONSIDERATION More and more the semiconductor component supplier and the ultimate system user are becoming aware of the need for reliable components. Most failure mechanisms responsible for reliability
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TP72-7,
79CH1425-8
oven temperature sensors
thermal resistance measurement
ULN2003A
ULN2068B
ALLEGRO MICROSYSTEMS
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tm-1017
Abstract: JESD31 marking code ny SMD Transistor npn JEDEC JESD31 Automated Guided Vehicles project A434 RF MODULE MIL-I-46058 ASTM E104 M38510 cross index semiconductors cross index
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 September 2007. INCH-POUND MIL-PRF-38535H 16 March 2007 SUPERSEDING MIL-PRF-38535G 7July 2006 PERFORMANCE SPECIFICATION INTEGRATED CIRCUITS MICROCIRCUITS MANUFACTURING,
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MIL-PRF-38535H
MIL-PRF-38535G
MIL-PRF-3853591
RD-650)
tm-1017
JESD31
marking code ny SMD Transistor npn
JEDEC JESD31
Automated Guided Vehicles project
A434 RF MODULE
MIL-I-46058
ASTM E104
M38510 cross index
semiconductors cross index
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A434 RF MODULE
Abstract: JESD31 TRANSISTOR SMD MARKING CODE A45 NCSL Z540.3 MIL-I-46058 part marking b36 smd diode tm-1017 B568 solar water pumping machine control schematic JEDEC JESD31
Text: DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER, COLUMBUS POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER TO DSCC-VAC 20 April, 2010 MEMORANDUM FOR MILITARY/INDUSTRY DISTRIBUTION SUBJECT: Initial Draft of MIL-PRF-38535 Revision J: Project Number 5962-2010-006
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MIL-PRF-38535
MIL-PRF-38535J
RD-650)
A434 RF MODULE
JESD31
TRANSISTOR SMD MARKING CODE A45
NCSL Z540.3
MIL-I-46058
part marking b36 smd diode
tm-1017
B568
solar water pumping machine control schematic
JEDEC JESD31
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IR 529
Abstract: diode Sr 203 Q62703-Q148 Q62703-Q833 ir 271
Text: LD 271 LD 271 L GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 271 LD 271 L Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● GaAs-IR-LED, hergestellt im ● GaAs infrared emitting diode, fabricated in a
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GMO06983
Abstract: Q62702-P5053 marking code diode 04 to-18
Text: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) SFH 4860 Chip position 1 0.9 .1 (2.7) 4.05 3.45 Flat glass cap ø2.54 5.5 5.2 fmo06983 Cathode 1.1 .9 ø4.8 ø4.6 2.54 mm spacing ø0.45 14.5 12.5 GMO06983 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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fmo06983
GMO06983
OHR01872
OHR00391
OHR00389
GMO06983
Q62702-P5053
marking code diode 04 to-18
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Untitled
Abstract: No abstract text available
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 405 Wesentliche Merkmale • GaAs-IR-Lumineszenzdiode • Hohe Zuverlässigkeit • Gruppiert lieferbar • Gehäusegleich mit SFH 305 • Miniatur-Gehäuse Features • GaAs infrared emitting diode • High reliability
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GEOY6137
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GEO06137
Abstract: OHRD1938 Q62702-P835
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 405 Wesentliche Merkmale • GaAs-IR-Lumineszenzdiode • Hohe Zuverlässigkeit • Gruppiert lieferbar • Gehäusegleich mit SFH 305 • Miniatur-Gehäuse Features • GaAs infrared emitting diode • High reliability
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OHR01886
GEO06137
GEO06137
OHRD1938
Q62702-P835
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GMO06983
Abstract: Q62702-P5053
Text: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) SFH 4860 Wesentliche Merkmale • Hergestellt im Schmezepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an
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OHR00389
GMO06983
GMO06983
Q62702-P5053
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Untitled
Abstract: No abstract text available
Text: GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) SFH 4860 Wesentliche Merkmale • Hergestellt im Schmezepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an
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OHR00389
GMOY6983
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GEO06021
Abstract: OHRD1938 Q62703-Q395 Q62703-Q67
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 261 Wesentliche Merkmale • GaAs-IR-Lumineszenzdiode • Hohe Zuverlässigkeit • Gruppiert lieferbar • Gehäusegleich mit BPX 81 • Miniatur-Gehäuse Features • GaAs infrared emitting diode • High reliability
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OHR01878
GEO06021
GEO06021
OHRD1938
Q62703-Q395
Q62703-Q67
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Untitled
Abstract: No abstract text available
Text: GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays LD 262 … LD 264 Wesentliche Merkmale • GaAs-IR-Lumineszenzdiode • Hohe Zuverlässigkeit • Gruppiert lieferbar • Gehäusegleich mit BPX 80-Serie • Miniatur-Gehäuse Features • GaAs infrared emitting diode
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80-Serie
GEOY6367
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oIR 503
Abstract: Tektronix schematic schottky transistor spice
Text: TEKTRONI X INC/ INTEGR AT ED TCI/ INTEGRATED EIE D fiTDtilEM Q G G O n b CIRCUITS OPERATION , I L l f \ l. BIPOLAR PRODUCTS .ri. B “- r s p e c if ic a t io n s ! ORDERING INFORMATION j T -V 2 -2 Ï QUICKCHIP 6 FAMILY OF INTEGRATED CIRCUIT ARRAYS The QuickChip 6 family of Inte
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OCR Scan
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Untitled
Abstract: No abstract text available
Text: HOLTEK r n r ^ HT47C20 8-Bit Microcontroller Features • • • • • • • • • • • • • • O perating voltage: 2.4V~3.6V E ig h t bidirectional I/O lines Four in put lines One in terru p t in put One 16-bit program m able tim er/event counter w ith PFD program m able
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HT47C20
16-bit
768kH
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LF50
Abstract: No abstract text available
Text: bOE D • fl23SbGS DDi4b551 57b « S I E G -7=<Y/-&7 SIEMENS SFH4210 SIEMENS AKTIENGESELLSCHAF INFRARED EMITTING DIODE T018PA C K A G E ^ ■L Preliminary Data Sheet FEATURES Maximum Ratings * InGaAsP/lnP IRED Operating Temperature Range at Case Tc Storage Temperature Range (T3To)
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fl23SbGS
DDi4b551
SFH4210
T018PA
LF50
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LN1871Y5TRP
Abstract: No abstract text available
Text: Approved Checked Designed DEVELOPMENT SPECIFICATION P /N : LN 1871Y5TRP Y T A P P L I CAT I ON Soft Orange Light E l i t t i n g Diode M A T E R I A L GaAsP N At tached O U T L I Indicators E A B S O L U T E P M A X I M U M 60 R mW A T I N G S C O N D I T I O N
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LN1871Y5TRP
kb-h-022-0
KB-H-022-016B
LN1871Y5TRP
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CMP02CJ
Abstract: CMP02CP CMP02CS CMP-02C 02cj CMP-01 CMP-02 CMP-02E CMP02EP CMP 02GR
Text: Low Input Current Precision Comparator CMP-02 ANALOG ► DEVICES G EN ER AL DESCRIPTION FEATURES • • • • • • • • The CMP-02 is a monolithic low input current comparator Low Offset V ö llig e 0.3mV Typ, 0.8mV Max using an advanced NPN-Schottky Barrier Diode process. It
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CMP-02
110dB
190ns
270nt
/710/Sock
CMP02CJ
CMP02CP
CMP02CS
CMP-02C
02cj
CMP-01
CMP-02
CMP-02E
CMP02EP
CMP 02GR
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Untitled
Abstract: No abstract text available
Text: TCI 06-1 2592 X 1 CCD LINEAR IMAGE SENSOR 0 2 9 9 2 , SEPTEMBER 1 9 8 6 -R E V IS E D JULY 1 989 • 2 5 9 2 x 1 Sensor Element Organization • Virtual-Phase N-Channel Silicon MOS Technology • High Quantum Efficiency TOP VIEW C 1 OSC Enhanced Blue Response
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAIAs-Lumineszenzdiode 660 nm GaAIAs Light Emitting Diode (660 nm) SFH 4860 Chip position 14.5 12.5 LO o ö (2 .7 ) E 0)1 CO LO cp Q _- c \i w J Cathode 4.05 3.45 Flat glass cap 02.54 GM006983 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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GM006983
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d 331 TRANSISTOR equivalent
Abstract: C 3311 transistor la 4142 74143
Text: SA MSUNG SEM ICO NDUCTOR INC 14E D | 7Tb4142 00071,5*1 4 I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5010 C o l o r t v h o r iz o n t a l o u t p u t APPLICATIONS DAMPER DIODE BUILT IN High Collector-Bass Voltage VCbo =1500V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)
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7Tb4142
KSD5010
GQG77fe
d 331 TRANSISTOR equivalent
C 3311 transistor
la 4142
74143
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