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    Microchip Technology Inc ATDH2221

    ADAPTER FOR ATDH2200 20SOIC
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    Microchip Technology Inc ATDH2080

    AT6000 SERIES FPGA PROTOTYPE KIT
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    DigiKey ATDH2080 1
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    IDEC Corporation LSTD-H2W

    LED BULB
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    DigiKey LSTD-H2W Bulk 1
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    Master Electronics LSTD-H2W 1
    • 1 $10.868
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    Neutron USA LSTD-H2W 1
    • 1 $75.33
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    IDEC Corporation LSTD-H2R

    CONFIG SWITCH LAMP LED RED 120V
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    Mouser Electronics LSTD-H2R 47
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    Microchip Technology Inc ATDH2225

    CABLE ISP FOR AT17
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    TDH2 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TDH2 Radiometrix UHF Multi Channel Hi Power Radio Modem Original PDF
    TDH2-433-4 Radiometrix UHF Multi Channel Hi Power Radio Modem Original PDF
    TDH2-433-9 Radiometrix UHF Multi Channel Hi Power Radio Modem Original PDF
    TDH25F00 L-Com ADAPTOR KIT DB25F/DUAL BLANKS Original PDF
    TDH25FJ1245K L-Com ADAPTOR KIT DB25F/RJ12&RJ45K Original PDF
    TDH25FJ12D L-Com ADAPTOR KIT DB25F/MMJ JACK Original PDF
    TDH25FJ4545K L-Com ADAPTOR KIT DB25F/DUAL RJ45K Original PDF
    TDH25FJ45K L-Com ADAPTOR KIT DB25F/RJ45K JACK Original PDF
    TDH25M00 L-Com ADAPTOR KIT DB25M/DUAL BLANKS Original PDF
    TDH25MJ1212 L-Com ADAPTOR KIT DB25M/DUAL RJ12 Original PDF
    TDH25MJ1245K L-Com ADAPTOR KIT DB25M/RJ12&RJ45K Original PDF
    TDH25MJ4545K L-Com ADAPTOR KIT DB25M/DUAL RJ45K Original PDF
    TDH25MJ45K L-Com ADAPTOR KIT DB25M/RJ45K JACK Original PDF
    TDH2R-433-9 Radiometrix UHF Multi Channel Hi Power Radio Modem Original PDF
    TDH2T-433-9 Radiometrix UHF Multi Channel Hi Power Radio Modem Original PDF

    TDH2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TDH2

    Abstract: circuit diagram of MAX232 connection to microcontroller circuit diagram of MAX232 connection to pic max232 16 pin diagram with pin function modbus code pic 9pin rs232 RS232 MAX232 TDH2-433-9 MAX232 internal circuit diagram MAX232
    Text: W E N Radiometrix Hartcran House, 231 Kenton Lane, Harrow, HA3 8RP, England Issue 2, 20 May 2009 TDH2 Tel: +44 0 20 8909 9595, Fax: +44 (0) 20 8909 2233 UHF Multi Channel Hi Power Radio Modem The TDH2 is a 9600baud half-duplex multi channel OEM radio modem with a power output


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    PDF 9600baud TDH2 circuit diagram of MAX232 connection to microcontroller circuit diagram of MAX232 connection to pic max232 16 pin diagram with pin function modbus code pic 9pin rs232 RS232 MAX232 TDH2-433-9 MAX232 internal circuit diagram MAX232

    circuit diagram of MAX232 connection to microcontroller

    Abstract: max232 16 pin diagram with pin function circuit diagram of MAX232 connection to pic MAX232 pin configuration 9pin rs232 MAX232 PIN DETAILS MAX232 all pin diagram MAX232 internal circuit diagram IMAGE OF circuit diagram of MAX232 connection TDH2-433-9
    Text: W E N Radiometrix Hartcran House, 231 Kenton Lane, Harrow, HA3 8RP, England Issue 2, 06 October 2006 TDH2 Tel: +44 0 20 8909 9595, Fax: +44 (0) 20 8909 2233 UHF Multi Channel Hi Power Radio Modem The TDH2 is a 9600baud half-duplex multi channel OEM radio modem with a power output


    Original
    PDF 9600baud circuit diagram of MAX232 connection to microcontroller max232 16 pin diagram with pin function circuit diagram of MAX232 connection to pic MAX232 pin configuration 9pin rs232 MAX232 PIN DETAILS MAX232 all pin diagram MAX232 internal circuit diagram IMAGE OF circuit diagram of MAX232 connection TDH2-433-9

    Untitled

    Abstract: No abstract text available
    Text: Hartcran House, 231 Kenton Lane, Harrow, Middlesex, HA3 8RP, England Tel: +44 0 20 8909 9595, Fax: +44 (0) 20 8909 2233, www.radiometrix.com Issue 2, 31 July 2012 TDH2 1234567894ABCDDE74294F E 4 C9 45 E The TDH2 is a 9600baud half-duplex multi channel


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    PDF 1234567894ABCDDE74294F 9600baud

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original
    PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit

    UNITRODE

    Abstract: No abstract text available
    Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features ➤ Data retention in the absence of power ➤ Automatic write-protection during power-up/power-down cycles ➤ Industry-standard 32-pin 256K x 8 pinout ➤ Conventional SRAM operation; unlimited write cycles


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    PDF bq4014/bq4014Y 32-pin 10-year 256Kx8 bq4014 152-bit UNITRODE

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


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    PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


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    PDF bq4010/bq4010Y 28-pin 10-year bq4010 536-bit

    bq4010

    Abstract: bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y
    Text: Not Recommended For New Designs bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


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    PDF bq4010/Y/LY SLUS116A 28-Pin 536-bit bq4010 bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y

    Untitled

    Abstract: No abstract text available
    Text: bq4852Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail control circuit, and battery The bq4852Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with


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    PDF bq4852Y 512Kx8 304-bit 10-year

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


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    PDF bq4010/bq4010Y bq4010 536-bit 28-pin 10-year

    DS1250

    Abstract: DS1250AB DS1250AB-100 DS1250AB-70 DS1250Y DS1250Y-100 DS1250Y-70 DS9034PC
    Text: DS1250Y/AB 4096k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM,


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    PDF DS1250Y/AB 4096k DS1250Y) DS1250AB) 32-pin DS1250 DS1250AB DS1250AB-100 DS1250AB-70 DS1250Y DS1250Y-100 DS1250Y-70 DS9034PC

    Untitled

    Abstract: No abstract text available
    Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


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    PDF bq4010/Y/LY SLUS116A 28-Pin 536-bit

    Untitled

    Abstract: No abstract text available
    Text: bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original
    PDF bq4013/Y/LY SLUS121A 32-Pin 576-bit

    Untitled

    Abstract: No abstract text available
    Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4014 is a nonvolatile 2,097,152-bit static RAM organized as 262,144 words by 8 bits. The integral control circuitry and lithium energy


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    PDF bq4014/bq4014Y 256Kx8 bq4014 152-bit 32-pin 10-year

    ir 0948

    Abstract: No abstract text available
    Text: Driver Transformers •4- .750 4 .660 t □ 11 11 1! II fj I -*j 1-4- .8 5 0 - ► 1 Tififr I ►j .515 I-4 -.2 0 0 -4—.850 — 4 .830 II II U II LJ Features t- -i TDH187 •Core:EI187 • Ae 0.228 • le 4.01 • AW 0.316 .1 7 5 4 TDH2425 • Core: El 2425


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    PDF TDH187 EI187 TDH2425 TDH375 TDH21 TDH625 ir 0948

    Untitled

    Abstract: No abstract text available
    Text: o bq4850Y U N I T R O D E - RTC Module with 512Kx8 NVSRAM Features General Description >• I n te g r a t e d SRAM, re a l-tim e clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a non­ volatile 4,194,304-bit SRAM organ­


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    PDF bq4850Y 512Kx8 304-bit 32-pin

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq401 OY UNITRODE- 8Kx8 Nonvolatile SRAM Features General Description > D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


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    PDF bq4010/bq401 bq4010 536-bit bq4010YMA-70N bq4010-70 bq4010/bq4010Y bq401Q 150ns 200ns

    10ST10

    Abstract: lq55
    Text: Ordering n u m b e r:EN4794B CMOS LSI LC3564S, SS, SM, ST-70/85/10 64K 8192wordsX8 bits SRAM Overview The LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CMOS static RAMs with an 8192-word X 8-bit organization. These SRAMs are full CMOS type


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    PDF EN4794B LC3564S, ST-70/85/10 8192wordsX8 LC3564SS, LC3564SM, LC3564ST 8192-word 10ST10 lq55

    SS 1091

    Abstract: SED1510F0C LCD ALPHANUMERIC DISPLAY 1091
    Text: SED1510 CMOS SEGMENT-TYPE LCD CONTROLLER DRIVER • Serial Data Interface • Built-in Display data RAM • 4 COM Driver Output and 32 SEG Driver Output • DESCRIPTION The SED1510 is an intelligent CMOS LCD driver-controller for segment type liquid crystal display with the


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    PDF SED1510 SED1510 SEG10 SEG11 SEG12 SEG13 SEG14 SEG15 SS 1091 SED1510F0C LCD ALPHANUMERIC DISPLAY 1091

    AD7543JN

    Abstract: AD7543 AD7543AD AD7543GKCWE AD7543GKN AD7543JCWE AD7543KCWE AD7543KN GK 289 AD7543GTD/883B
    Text: /k l/J X I/k l CMOS S erial In put 12-B it DAC T h e A D 754 3 is a high precision 12-bit digital-to analog co nverter D A C w hich uses a serial rather than parallel input schem e fo r loading data. Included are a serial-to -parallel shift register, a separate DAC


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    PDF 12-Bit AD7543 AD7543JN AD7543AD AD7543GKCWE AD7543GKN AD7543JCWE AD7543KCWE AD7543KN GK 289 AD7543GTD/883B

    DS1245V

    Abstract: 32-PIN 34-PIN DS1245 DS1245AB DS1245Y DS1243AB-100
    Text: D S 1245Y /A B DALLAS s e m ic o n d u c t o r DS1245Y/AB 1024K Nonvolatile SRAM FEATURES PIN ASSIGNM ENT * 1 0 years minimum data retention in the absence of external power 1 1 NC A16 • Data is automatically protected during power loss Í A14 • Dl P-package devices directly replace 128K x 8 vola­


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    PDF DS1245Y/AB 1024K DS1245Y) DS1245AB) 32-pin 2blH13D DS1245YL/ABL 34-PIN DS1245V DS1245 DS1245AB DS1245Y DS1243AB-100

    34-PIN

    Abstract: DS1345 DS1345W DS9034PC
    Text: DS1345W PRELIMINARY •»Ai g j i c U A L L A O s e m ic o n d u c to r FEATURES DS1345W 3.3V 1024K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT • 10 years m inim um data retention in the absence of external power NC NC A14 A13 A12 A11 A10 A9 A8


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    PDF DS1345W 1024K 128Kx 34-PIN DS1345 DS1345W DS9034PC

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATE] DEVICE bbE J> m 4A25771 GG12414 Ì7D « I D T VERY LOW POWER 3.3V CMOS FAST SRAM 256k 32k X 8-BIT) ADVANCE INFORMATION IDT713256SL Integrated Device Technology, Inc. FEATURES • Ideal for 16/32-bit notebook/sub-notebook cache at 20,25, and 33MHz, and for other battery-operated equipment


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    PDF 4A25771 GG12414 IDT713256SL 16/32-bit 33MHz, 500uA 20/25/30ns 300uA 28-pin IDT713256SL

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 64K 8K x 8-BIT IDT7164S IDT7164L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh-speed ad dress/chip se le ct access tim e — M ilitary: 20 /25/3 0/35 /45/55/7 0/85 ns (m ax.) — C om m ercia l: 15/2 0/25 /30/35ns (m ax.)


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    PDF IDT7164S IDT7164L /30/35ns 28-pin 32-pin T7164 D28-3) D28-1) P28-1) P28-2)