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    TEFT4300 Price and Stock

    Vishay Semiconductors TEFT4300

    PHOTOTRANSISTOR 875 TO 1000 NM
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    DigiKey TEFT4300 Bulk 10,468 1
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    Vishay Semiconductors TEFT4300OS

    EMITTER
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    Vishay Intertechnologies TEFT4300

    Phototransistor IR Chip Silicon 925nm 2-Pin T-1 - Bulk (Alt: 78Y9564)
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    Avnet Americas TEFT4300 Bulk 16 Weeks, 4 Days 1
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    Quest Components TEFT4300 800
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    Chip 1 Exchange TEFT4300 4,914,000
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    Chip1Stop TEFT4300 200,000
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    TEFT4300 3,065
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    New Advantage Corporation TEFT4300 64,000 1
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    Wuhan P&S TEFT4300 3,435,000 1
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    Vishay Intertechnologies TEFT4300-CS12Z

    Phototransistors PHOTO TRANS. 3MM 30DEG FILTR-e2
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    Vishay Intertechnologies TEFT4300.

    Transistor, Photo, Npn, 925Nm, T-1; Wavelength Typ:925Nm; Viewing Angle:30°; Power Consumption:100Mw; No. Of Pins:2Pins; Product Range:-; Automotive Qualification Standard:-; Msl:-; Dc Collector Current:0.05A; Dark Current:200Na Rohs Compliant: No |Vishay TEFT4300.
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    Newark TEFT4300. Bulk 5,000
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    Find more TEFT4300 price and stock on Findchips.com

    TEFT4300 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TEFT4300 Temic Semiconductors Silicon NPN Phototransistor Original PDF
    TEFT4300 Vishay Intertechnology Silicon NPN Phototransistor Original PDF

    TEFT4300 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TEFT4300 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times


    Original     		PDF TEFT4300 TSUS4300 TSAL4400 2002/95/EC 2002/96/EC TEFT4300 2002/95/EC. 2011/65/EU. JS709A

    TEFT4300

    Abstract: 8239 Silicon NPN Phototransistor TSAL4400 TSUS4300 npn phototransistor 86-36-2
    Text: TEFT4300 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times


    Original     		PDF TEFT4300 TSUS4300 TSAL4400 2002/95/EC 2002/96/EC TEFT4300 18-Jul-08 8239 Silicon NPN Phototransistor TSAL4400 npn phototransistor 86-36-2

    TEFT4300

    Abstract: TSUS4300 950nm
    Text: TEFT4300 Vishay Semiconductors Silicon NPN Phototransistor Description TEFT4300 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 ø 3 mm plastic package. The epoxy package itself is an IR filter, spectrally


    Original     		PDF TEFT4300 TEFT4300 900nm) TSUS4300 D-74025 20-May-99 950nm

    8239

    Abstract: Diode IR 8294 TEFT4300 TSUS4300
    Text: TEFT4300 Vishay Telefunken Silicon NPN Phototransistor Description TEFT4300 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 ø 3 mm plastic package. The epoxy package itself is an IR filter, spectrally


    Original     		PDF TEFT4300 TEFT4300 900nm) TSUS4300 D-74025 20-May-99 8239 Diode IR 8294

    Untitled

    Abstract: No abstract text available
    Text: TEFT4300 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times


    Original     		PDF TEFT4300 TSUS4300 TSAL4400 2002/95/EC 2002/96/EC TEFT4300 11-Mar-11

    TEFT4300

    Abstract: No abstract text available
    Text: TEFT4300 Vishay Telefunken Silicon NPN Phototransistor Description TEFT4300 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 ø 3 mm plastic package. The epoxy package itself is an IR filter, spectrally


    Original     		PDF TEFT4300 TEFT4300 900nm) TSUS4300 D-74025 20-May-99

    TEFT4300

    Abstract: TSUS4300 Infrared emitter
    Text: TEFT4300 Vishay Semiconductors Silicon NPN Phototransistor Description TEFT4300 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1 ∅ 3 mm plastic package. The epoxy package itself is an IR filter, spectrally


    Original     		PDF TEFT4300 TEFT4300 900nm) TSUS4300 2002/95/EC 2002/96/EC 08-Apr-05 Infrared emitter

    Untitled

    Abstract: No abstract text available
    Text: TEFT4300 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times


    Original     		PDF TEFT4300 TSUS4300 TSAL4400 TEFT4300 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    TEFT4300

    Abstract: 8239 Diode IR 8294 Infrared emitter
    Text: TEFT4300 Silicon NPN Phototransistor Description TEFT4300 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 ø 3 mm plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters with l p 900nm).


    Original     		PDF TEFT4300 TEFT4300 900nm) D-74025 21-Aug-96 8239 Diode IR 8294 Infrared emitter

    Silicon NPN Phototransistor

    Abstract: No abstract text available
    Text: TEFT4300 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times


    Original     		PDF TEFT4300 TSUS4300 TSAL4400 TEFT4300 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. Silicon NPN Phototransistor

    TEFT4300

    Abstract: TSUS4300
    Text: TEFT4300 Vishay Telefunken Silicon NPN Phototransistor Description TEFT4300 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 ø 3 mm plastic package. The epoxy package itself is an IR filter, spectrally


    Original     		PDF TEFT4300 TEFT4300 900nm) TSUS4300 D-74025 20-May-99

    TEFT4300

    Abstract: No abstract text available
    Text: TELEFUNKEN Semiconductors TEFT 4300 Silicon NPN Phototransistor Description TEFT4300 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 ø 3 mm plastic package. The epoxy package itself is an IR filter, spectrally


    Original     		PDF TEFT4300 900nm) D-74025

    TEFT4300

    Abstract: TSAL4400 TSUS4300
    Text: TEFT4300 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times


    Original     		PDF TEFT4300 TSUS4300 TSAL4400 2002/95/EC 2002/96/EC TEFT4300 11-Mar-11 TSAL4400

    TEFT4300

    Abstract: TSUS4300
    Text: TEFT4300 Vishay Semiconductors Silicon NPN Phototransistor Description TEFT4300 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1 ∅ 3 mm plastic package. The epoxy package itself is an IR filter, spectrally


    Original     		PDF TEFT4300 TEFT4300 TSUS4300 2002/95/EC 2002/96/EC 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: TSAL4400 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 94 8636 DESCRIPTION Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 940 nm


    Original     		PDF TSAL4400 TEFT4300 2002/95/EC 2002/96/EC TSAL4400 11-Mar-11

    TSSP4038

    Abstract: No abstract text available
    Text: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2


    Original     		PDF VMN-MS6520-1311 TSSP4038

    Untitled

    Abstract: No abstract text available
    Text: TSUS4300 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 16°


    Original     		PDF TSUS4300 TEFT4300 TSUS4300 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    mdd 2605

    Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
    Text: 755 Technical portal and online community for Design Engineers - www.element-14.com Optoelectronics, Solid State Illumination & Displays Page Alphanumeric LCD Modules . . . . . . . . . . . . . . . . . 903 Alphanumeric LED Displays . . . . . . . . . . . . . . . . . 900


    Original     		PDF element-14 element14 mdd 2605 HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943

    Untitled

    Abstract: No abstract text available
    Text: TE MIC TEFT4300 Semiconductors Silicon NPN Phototransistor Description T E F T 4 3 0 0 is a h ig h sp ee d a n d h ig h se n sitiv e silic o n N P N e p ita x ial p la n a r p h o to tra n s is to r in a sta n d a rd T - l 0 3 m m plastic p ack ag e. T h e e p o x y p a c k a g e its e lf is an IR filter, sp ec tra lly


    OCR Scan     		PDF TEFT4300 21-Aug-96

    BPW85C

    Abstract: No abstract text available
    Text: Tem ic S e m i c o n d u c t o r s Detectors Photo Transistors .fe-'. . . Photo - Sensitive Package . •: . Cbaraaeristiès jfca^MA V E e/fflW /Ö B ^ C V C Ç -5V , TVpe X => 950 um I r —S mA., X » 950w n) Photo Transistors in Clear Plastic Package


    OCR Scan     		PDF BPW16N BPW17N BPW85A BPW85B BPW85C BPW96A BPW96B BPW96C BPV11 TEMT2100

    c1g smd

    Abstract: bpv10nf TEMD2100
    Text: Tem ic S e m i c o n d u c t o r s Selector Guide Infrared Emitting Diodes Characteristics Package Type +/-<p 1 ¡e /m W /sr @ Ip /m A { V p /V @ Ip /m A tr , tf / ns Standard IR Emitters GaAs 950 nm in Plastic Package CQY36N ais=— = r d ] -


    OCR Scan     		PDF CQY36N CQY37N TSUS4300 TSUS4400 CQX48A CQX48B TSSS2600 TSUS5200 TSUS5201 TSUS5202 c1g smd bpv10nf TEMD2100

    Untitled

    Abstract: No abstract text available
    Text: Tem ic TSUS4300 S e m i c o n d u c t o r s GaAs Infrared Emitting Diode in 0 3 mm T -l Package Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without


    OCR Scan     		PDF TSUS4300 TSUS4300 D-74025 15-M-96

    BPW 64 photo

    Abstract: BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na
    Text: VISHAY Vishay Telefunken Selector Guide Detectors Photo Transistors C haracteristics Dim. Package Fig- Type Photo Sensitive Area / mm 2 lca / m A @ Ee /m W /c m 2 + /- q¡ V c e = 5 V, X = 950 nm 1 tr / (j.s @ (lc = 5 mA, X = RL /k Q 950 nm) Photo Transistors in Clear Plastic Package


    OCR Scan     		PDF BPW16N BPW17N BPW85C BPW96C BPV11 BPV23FL TESS5400 900nm) BPW 64 photo BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na