Untitled
Abstract: No abstract text available
Text: Package outline TFBGA84: plastic thin fine-pitch ball grid array package; 84 balls; body 7 x 7 x 0.8 mm B D SOT904-1 A ball A1 index area A E A2 A1 detail X e1 ∅v ∅w b e C M M C A B C y y1 C N M L e K J H e2 G F E D C B A ball A1 index area 1 2 3 4 5 6
|
Original
|
TFBGA84:
OT904-1
MO-195
|
PDF
|
TFBGA84
Abstract: sot904 MO-195
Text: Package outline Philips Semiconductors TFBGA84: plastic thin fine-pitch ball grid array package; 84 balls; body 7 x 7 x 0.8 mm B D SOT904-1 A ball A1 index area A E A2 A1 detail X e1 C ∅v ∅w b e M M C A B C y y1 C N M L e K J H e2 G F E D C B A ball A1
|
Original
|
TFBGA84:
OT904-1
MO-195
TFBGA84
sot904
MO-195
|
PDF
|
STLC2500
Abstract: bluetooth transmitter receiver parallel chip mobile mobile hardware integration integrated synthesizer vco
Text: Complete Bluetooth v1.2 feature support • Adaptive frequency hopping AFH : hopping kernel, channel assessment as master and slave Faster connections: interlaced scan for page and inquiry scan, answer FHS at first reception, RSSI used to limit range Extended SCO (eSCO) links
|
Original
|
STLC2500
32-bit
bluetooth transmitter receiver parallel chip mobile
mobile hardware integration
integrated synthesizer vco
|
PDF
|
HYB18T1G160C2F-25F
Abstract: HYB18T1G400C2F-3S HYB18T1G800C2F-25F HYI18T1G160C2F-3 DDR2-800E
Text: January 2008 HY[B/I]18T1G400C2[C/F] HY[B/I]18T1G800C2[C/F] HY[B/I]18T1G160C2[C/F] 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.02 Internet Data Sheet HY[B/I]18T1G[40/80/16]0C2[C/F] 1-Gbit Double-Data-Rate-Two SDRAM
|
Original
|
18T1G400C2
18T1G800C2
18T1G160C2
18T1G
HYB18T1G160C2F-25F
HYB18T1G400C2F-3S
HYB18T1G800C2F-25F
HYI18T1G160C2F-3
DDR2-800E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: W9712G6KB 2M 4 BANKS 16 BIT DDR2 SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
|
Original
|
W9712G6KB
|
PDF
|
HYB18T1G400C2FL-3
Abstract: HYB18T1G400C2F-3S
Text: March 2008 HY[B/I]18T1G400C2[C/F] L HY[B/I]18T1G800C2[C/F](L) HY[B/I]18T1G160C2[C/F](L) 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM Internet Data Sheet Rev. 1.20 Internet Data Sheet HY[B/I]18T1G[40/80/16]0C2[C/F](L) 1-Gbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.20, 2008-03
|
Original
|
18T1G400C2
18T1G800C2
18T1G160C2
18T1G
HYB18T1G400C2FL-3
HYB18T1G400C2F-3S
|
PDF
|
DDR2-667C
Abstract: No abstract text available
Text: December 2006 HYB18T256400BF L HYB18T256800BF(L) HYB18T256160BF(L) 256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.0 Internet Data Sheet HYB18T256xx0BF(L)–[25F/…/5] 256-Mbit Double-Data-Rate-Two SDRAM
|
Original
|
HYB18T256400BF
HYB18T256800BF
HYB18T256160BF
256-Mbit
HYB18T256xx0BF
DDR2-667C
|
PDF
|
HYB18T512-800B2F3S
Abstract: HYB18T512160B2F-3S
Text: July 2007 HY[B/I]18T512400B2[C/F] L HY[B/I]18T512800B2[C/F](L) HY[B/I]18T512160B2[C/F](L) 512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.2 Internet Data Sheet HY[B/I]18T512[40/80/16]0B2[C/F](L) 512-Mbit Double-Data-Rate-Two SDRAM
|
Original
|
18T512400B2
18T512800B2
18T512160B2
512-Mbit
18T512
HYB18T512xx0B2FL-
HYB18T512-800B2F3S
HYB18T512160B2F-3S
|
PDF
|
DDR2-667C
Abstract: tls 106-6
Text: June 2008 HYB18T 1G 400C 4 F HYB18T 1G 800C 4 F HYB18T 1G 160C 4 F 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM EU RoHS Compliant Products Advance Internet Data Sheet Rev. 0.50 Advance Internet Data Sheet HYB18T1G[40/80/16]0C4F 1-Gbit Double-Data-Rate-Two SDRAM
|
Original
|
HYB18T
HYB18T1G
04212008-66HT-ZLFE
DDR2-667C
tls 106-6
|
PDF
|
Untitled
Abstract: No abstract text available
Text: November 2007 HYB18T C1G 80 0 CF HYB18T C1G 16 0 CF 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Advance Internet Data Sheet Rev. 0.51 Date: 2007-12-13 Advance Internet Data Sheet HYB18TC1G[80/16]0CF 1-Gbit Double-Data-Rate-Two SDRAM
|
Original
|
HYB18T
HYB18TC1G
|
PDF
|
63 ball Vfbga thermal resistance
Abstract: No abstract text available
Text: IMPORTANT NOTICE Dear customer, As from February 2nd 2009, ST and Ericsson have merged Ericsson Mobile Platforms and ST-NXP Wireless into a 50/50 joint venture "ST‐Ericsson". As a result, the following changes are applicable to the attached
|
Original
|
|
PDF
|
qimonda hyb18t1g400bf-2.5
Abstract: No abstract text available
Text: May 2007 HY[B/I]18T1G400B[F/C] L HY[B/I]18T1G800B[F/C](L) HY[B/I]18T1G160B[F/C](L) 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.2 Internet Data Sheet HY[B/I]18T1G[40/80/16]0B[C/F](L) 1-Gbit Double-Data-Rate-Two SDRAM
|
Original
|
18T1G400B
18T1G800B
18T1G160B
18T1G
HYB18T1G400BFL-3S,
HYB18T1G800BFL-3S,
HYB18T1G160BFL-3S,
qimonda hyb18t1g400bf-2.5
|
PDF
|
5mm ldr datasheet
Abstract: t-w 48-85 schematic SMPS 24V sensor LDR 90 ball VFBGA ldr sensor led ldr sensor car body control module MMC 4.2 smps Power Supply Schematic Diagram
Text: 34 .80 7IRELESS IMPORTANT NOTICE Dear customer, As from August 2nd 2008, the wireless operations of STMicroelectronics have moved to a new company, ST-NXP Wireless. As a result, the following changes are applicable to the attached document. ● Company name - STMicroelectronics NV is replaced with ST-NXP Wireless.
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IMPORTANT NOTICE Dear customer, As from February 2nd 2009, ST and Ericsson have merged Ericsson Mobile Platforms and ST-NXP Wireless into a 50/50 joint venture "ST‐Ericsson". As a result, the following changes are applicable to the attached
|
Original
|
|
PDF
|
|
w971gg6
Abstract: W971
Text: PRELIMINARY W971GG6IB 8M x 8 BANKS × 16 BIT DDR2 SDRAM Table of Contents1. GENERAL DESCRIPTION .4 2. FEATURES .4
|
Original
|
W971GG6IB
w971gg6
W971
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2F., No.512, Sianjheng 2nd Rd., Chu-Pei City, Hsinchu County, Taiwan 302, ROC TEL: +886-3-5585138 FAX:+886-3-5585139 New Product Release Part No: EM44BM1684LBB This is to notify our valuable customers that EOREX had launched its new version device for 32M*16 DDR2
|
Original
|
EM44BM1684LBB
TFBGA-84Ball
EM44BM1684LBB,
EM44BM1684LBB
EM44BM1684LBA.
EM44BM1684LBA)
|
PDF
|
STLC2500A
Abstract: STLC2500ATR
Text: 34 .80 7IRELESS IMPORTANT NOTICE Dear customer, As from August 2nd 2008, the wireless operations of STMicroelectronics have moved to a new company, ST-NXP Wireless. As a result, the following changes are applicable to the attached document. s t ● Company name - STMicroelectronics NV is replaced with ST-NXP Wireless.
|
Original
|
|
PDF
|
EM44BM1684LBA
Abstract: bga 84 BGA84 BGA-84 DDR2-667 em44bm1684lba-3f
Text: eorex EM44BM1684LBA 512Mb 8Mx4Bank×16 Double DATA RATE 2 SDRAM Features Description • JEDEC Standard VDD/VDDQ=1.8V ± 0.1V. • All inputs and outputs are compatible with SSTL_18 interface. • Fully differential clock inputs (CK,/CK) operation. • 4 Banks
|
Original
|
EM44BM1684LBA
512Mb
BGA-84
EM44BM1684LBA
bga 84
BGA84
DDR2-667
em44bm1684lba-3f
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 34 .80 7IRELESS IMPORTANT NOTICE Dear customer, As from August 2nd 2008, the wireless operations of STMicroelectronics have moved to a new company, ST-NXP Wireless. As a result, the following changes are applicable to the attached document. ● Company name - STMicroelectronics NV is replaced with ST-NXP Wireless.
|
Original
|
|
PDF
|
57B6
Abstract: AN2537 JESD22-A114D so 322
Text: STw4510 2 step-down DC/DC converters / 5 LDO power management Preliminary Data Features • 2 Step-down converters – Vsdc1: 1 to 1.5 V with . 15 steps at 600 mA I2C control available . Programmable start-up value (1.2V by default) – Vsdc2: 1.8 V at 600 mA for general
|
Original
|
STw4510
100mA)
150mA
STw4510
57B6
AN2537
JESD22-A114D
so 322
|
PDF
|
s3c2416
Abstract: samsung s3c2416 S3C2442 STW4510AE s3c2442 datasheet s3c2416 temperature
Text: STw4510 Two step-down DC/DC converters and five LDO power management Preliminary Data Features • Two step-down converters – Vsdc1: 1 V to 1.5 V - 600 mA, 15 programming steps I2C control – Vsdc2: 1.8 V - 600 mA ■ Five low-drop output regulators for different
|
Original
|
STw4510
150mA
CD0016309057/57
s3c2416
samsung s3c2416
S3C2442
STW4510AE
s3c2442 datasheet
s3c2416 temperature
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STw4410 2 Step down DC/DC converter/4 LDO/MMC interface power management Data Brief Features • ■ ■ ■ STw4410T/LF TFBGA 84 6x6x1.2mm 0.5mm pitch 2 Step-down converters – Vsdc1: 1 to 1.5 V with 15 steps at 650 mA, and 1.2, 1.3, 1.4 & 1.5 V by ball
|
Original
|
STw4410
150mA
|
PDF
|
hyb18t512160BC-3
Abstract: HYB18T512 HYB18T512800BF-2.5 800E HYB18T512400B DDR2-667C HYB18T512800BF37 HYB18T512160BC3S
Text: May 2007 HYB18T512400B[C/F] HYB18T512800B[C/F] HYB18T512160B[C/F] 512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.1 Internet Data Sheet HYB18T512[40/80/16]0B[C/F] 512-Mbit Double-Data-Rate-Two SDRAM HYB18T512400B[C/F], HYB18T512160B[C/F], HYB18T512800B[C/F]
|
Original
|
HYB18T512400B
HYB18T512800B
HYB18T512160B
512-Mbit
HYB18T512
hyb18t512160BC-3
HYB18T512800BF-2.5
800E
DDR2-667C
HYB18T512800BF37
HYB18T512160BC3S
|
PDF
|
4040
Abstract: fbga84 80A5
Text: T-FBGA840-4040-0.80A5 Unit : mm T-FBGA840-4040-0.80A5 Unit mm
|
OCR Scan
|
T-FBGA840-4040-0
4040
fbga84
80A5
|
PDF
|