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    Toshiba America Electronic Components TK15A50D(STA4,Q,M)

    MOSFET N-CH 500V 15A TO220SIS
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    DigiKey TK15A50D(STA4,Q,M) Tube 84 1
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    Toshiba America Electronic Components TK15A60D(STA4,Q,M)

    MOSFET N-CH 600V 15A TO220SIS
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    Toshiba America Electronic Components TK15A60U(STA4,Q,M)

    MOSFET N-CH 600V 15A TO220SIS
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    Toshiba America Electronic Components TK15A50D(STA4QM)

    Trans MOSFET N-CH 500V 15A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK15A50D(STA4,Q,M))
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    Toshiba America Electronic Components TK15A50D(Q

    Trans MOSFET N-CH 500V 15A 3-Pin(3+Tab) TO-220SIS - Bulk (Alt: TK15A50D(Q,M))
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    TK15A Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK15A Topstek Topstek Current Transducer Original PDF
    TK15A20D Toshiba Transistors - Mosfets Original PDF
    TK15A20D Toshiba Japanese - Transistors - Mosfets Original PDF
    TK15A50D Toshiba Transistors - Mosfets Original PDF
    TK15A50D Toshiba Japanese - Transistors - Mosfets Original PDF
    TK15A50D(Q) Toshiba TK15A50D - Trans MOSFET N-CH 500V 15A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK15A50D(Q,M) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 15A TO220SIS Original PDF
    TK15A50D(STA4,Q,M) Toshiba TK15A50D - Trans MOSFET N-CH 500V 15A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK15A60D Toshiba Transistors - Mosfets Original PDF
    TK15A60D Toshiba Japanese - Transistors - Mosfets Original PDF
    TK15A60D(Q) Toshiba TK15A60D - Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK15A60D(STA4,Q,M) Toshiba TK15A60D - Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK15A60U Toshiba Japanese - Transistors - Mosfets Original PDF
    TK15A60U Toshiba Transistors - Mosfets Original PDF
    TK15A60U(STA4,Q,M) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 15A TO-220SIS Original PDF

    TK15A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TK15A

    Abstract: TK15A20D
    Text: TK15A20D MOSFETs Silicon N-Channel MOS π-MOS TK15A20D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.12 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)


    Original
    TK15A20D O-220SIS TK15A TK15A20D PDF

    TK15A60D

    Abstract: K15A60D TK15A60D N K15A60 TK15A60 k15a
    Text: TK15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK15A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω(typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original
    TK15A60D TK15A60D K15A60D TK15A60D N K15A60 TK15A60 k15a PDF

    K15A60D

    Abstract: TK15A60D K15A60 k15a
    Text: TK15A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK15A60D スイッチングレギュレータ用 単位: mm 10 ± 0.3 Ф3.2 ± 0.2 : IDSS = 10 A (最大) (VDS = 600 V) 15.0 ± 0.3 : |Yfs| = 8.5 S (標準) 順方向伝達アドミタンスが高い。


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    TK15A60D K15A60D TK15A60D K15A60 k15a PDF

    TK15A60S

    Abstract: TK15A60 TK15A
    Text: TK15A60S TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS Preliminary TK15A60S (S3F21) Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.26Ω (typ.) High forward transfer admittance: Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original
    TK15A60S S3F21) TK15A60S TK15A60 TK15A PDF

    Untitled

    Abstract: No abstract text available
    Text: TK15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK15A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)


    Original
    TK15A60U PDF

    K15A60

    Abstract: No abstract text available
    Text: TK15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK15A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original
    TK15A60D K15A60 PDF

    K15A60D

    Abstract: K15A60 TK15A60D S1612
    Text: TK15A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK15A60D スイッチングレギュレータ用 単位: mm 10 ± 0.3 Ф3.2 ± 0.2 : IDSS = 10 A (最大) (VDS = 600 V) 15.0 ± 0.3 : |Yfs| = 8.5 S (標準) 順方向伝達アドミタンスが高い。


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    TK15A60D K15A60D K15A60 TK15A60D S1612 PDF

    k15a60u

    Abstract: K15A60 TK15A60U k15a
    Text: TK15A60U 東芝電界効果トランジスタ シリコンNチャネルMOS形 DTMOSⅡ TK15A60U ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.24Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 8.5 S (標準)


    Original
    TK15A60U SC-67 2-10U1B 20070701-JA k15a60u K15A60 TK15A60U k15a PDF

    K*A50D

    Abstract: k15a50
    Text: TK15A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK15A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.)


    Original
    TK15A50D K*A50D k15a50 PDF

    K15A60

    Abstract: k15a60u TK15A60U k15a TK15A60 2415a TK15A
    Text: TK15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK15A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)


    Original
    TK15A60U K15A60 k15a60u TK15A60U k15a TK15A60 2415a TK15A PDF

    K15A50D

    Abstract: k15a50 TK15A50D k15a K*A50D 2-10U1B *K15A50
    Text: TK15A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK15A50D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.24 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.0 S (標準)


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    TK15A50D SC-67 2-10U1B K15A50D k15a50 TK15A50D k15a K*A50D 2-10U1B *K15A50 PDF

    K15A60D

    Abstract: No abstract text available
    Text: TK15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK15A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original
    TK15A60D K15A60D PDF

    K15A60

    Abstract: K15A60U TK15A60 k15a TK15A60U TK15A A2440
    Text: TK15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK15A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)


    Original
    TK15A60U K15A60 K15A60U TK15A60 k15a TK15A60U TK15A A2440 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK15A20D MOSFET シリコンNチャネルMOS形 π-MOS TK15A20D 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 0.12 Ω (標準) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 200 V)


    Original
    TK15A20D O-220SIS PDF

    k15a60u

    Abstract: TK15A60U k15a K15A60 TK15A60
    Text: TK15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK15A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)


    Original
    TK15A60U k15a60u TK15A60U k15a K15A60 TK15A60 PDF

    K15A50D

    Abstract: TK15A50D K15A 2-10U1B K*A50D
    Text: TK15A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK15A50D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.24 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.0 S (標準)


    Original
    TK15A50D SC-67 2-10U1B 20070701-JA K15A50D TK15A50D K15A 2-10U1B K*A50D PDF

    k15a60u

    Abstract: K15A60 TK15A60
    Text: TK15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK15A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)


    Original
    TK15A60U k15a60u K15A60 TK15A60 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK15A20D MOSFETs Silicon N-Channel MOS π-MOS TK15A20D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.12 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)


    Original
    TK15A20D O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK15A20D MOSFETs Silicon N-Channel MOS π-MOS TK15A20D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.12 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)


    Original
    TK15A20D O-220SIS PDF

    k15a60d

    Abstract: K15A60 TK15A60D N k15a
    Text: TK15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK15A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original
    TK15A60D k15a60d K15A60 TK15A60D N k15a PDF

    K15A50D

    Abstract: transistor K15a50d tk15a50d toshiba K15A50D toshiba marking code transistor k15a50d TK15A50 k15a50 TK15A k15a5 K*A50D
    Text: TK15A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK15A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.)


    Original
    TK15A50D K15A50D transistor K15a50d tk15a50d toshiba K15A50D toshiba marking code transistor k15a50d TK15A50 k15a50 TK15A k15a5 K*A50D PDF

    transistor K15a50d

    Abstract: No abstract text available
    Text: TK15A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK15A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.)


    Original
    TK15A50D transistor K15a50d PDF

    K15A50D

    Abstract: transistor K15a50d TK15A50D K15A50 TK15A50 TCH600 TK15A K*A50D toshiba 2010 3 toshiba K15A50D
    Text: TK15A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK15A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.)


    Original
    TK15A50D K15A50D transistor K15a50d TK15A50D K15A50 TK15A50 TCH600 TK15A K*A50D toshiba 2010 3 toshiba K15A50D PDF

    K15A60U

    Abstract: K15A60 k15a TK15A60U
    Text: TK15A60U 東芝電界効果トランジスタ シリコンNチャネルMOS形 DTMOSⅡ TK15A60U ○ スイッチングレギュレータ用 単位: mm • オン抵抗が低い。 : RDS (ON) = 0.24Ω (標準) • 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 8.5 S (標準)


    Original
    TK15A60U SC-67 2-10U1B K15A60U K15A60 k15a TK15A60U PDF