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E-Switch Inc TL1150AF070Q SWITCH TACTILE SPST-NO 0.05A 30V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TL1150AF070Q	Bulk	142,626		1	1 $0.72 10 $0.584 100 $0.4738 1000 $0.38207 10000 $0.32717	Buy Now
Mouser Electronics	TL1150AF070Q		1,236			1 $0.64 10 $0.511 100 $0.436 1000 $0.377 10000 $0.32	Buy Now
Newark	TL1150AF070Q	Bulk			1,000	1 - 10 - 100 - 1000 $0.335 10000 $0.335	Buy Now
RS	TL1150AF070Q	Bulk	985	13 Weeks	1	1 $0.22 10 $0.22 100 $0.22 1000 $0.22 10000 $0.22	Buy Now
STMicroelectronics STL115N10F7AG MOSFET N-CH 100V 107A POWERFLAT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STL115N10F7AG	Digi-Reel	15,306		1	1 $3.21 10 $2.09 100 $3.21 1000 $1.08877 10000 $1.08877	Buy Now
	STL115N10F7AG	Cut Tape	15,306		1	1 $3.21 10 $2.09 100 $3.21 1000 $1.08877 10000 $1.08877	Buy Now
	STL115N10F7AG	Reel	15,000		3,000	1 - 10 - 100 - 1000 - 10000 $1.006	Buy Now
Avnet Americas	STL115N10F7AG	Reel		26 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.9899	Buy Now
Mouser Electronics	STL115N10F7AG		2,356			1 $2.83 10 $1.94 100 $1.38 1000 $1.06 10000 $1	Buy Now
Newark	STL115N10F7AG	Cut Tape			1	1 $2.85 10 $2.02 100 $1.51 1000 $1.21 10000 $1.21	Buy Now
STMicroelectronics	STL115N10F7AG		2,356		1	1 $2.77 10 $1.9 100 $1.35 1000 $1.11 10000 $1.11	Buy Now

TME	STL115N10F7AG				1	1 $2.75 10 $2.47 100 $2.18 1000 $1.77 10000 $1.56	Get Quote
Avnet Silica	STL115N10F7AG		54,000	17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Honeywell Sensing and Control 2TL11-50 SWITCH TOGGLE DPDT 11A 125V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2TL11-50	Bulk			50	1 - 10 - 100 $80.16 1000 $80.16 10000 $80.16	Buy Now
Mouser Electronics	2TL11-50					1 - 10 - 100 $103.22 1000 $103.22 10000 $103.22	Get Quote
RS	2TL11-50	Bulk		56 Weeks	50	1 - 10 - 100 $100.2 1000 $90.18 10000 $90.18	Get Quote
Master Electronics	2TL11-50		105			1 $228.51 10 $221.71 100 $81.83 1000 $81.83 10000 $81.83	Buy Now
Honeywell Sensing and Control 4TL11-50M SWITCH TOGGLE 4PDT 10A 125V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	4TL11-50M	Bulk			50	1 - 10 - 100 $135.264 1000 $135.264 10000 $135.264	Buy Now
Mouser Electronics	4TL11-50M					1 - 10 - 100 $166.9 1000 $166.9 10000 $166.9	Get Quote
Newark	4TL11-50M	Bulk			1	1 $142.07 10 $142.07 100 $142.07 1000 $142.07 10000 $142.07	Buy Now
RS	4TL11-50M	Bulk		72 Weeks	50	1 - 10 - 100 $212.72 1000 $212.72 10000 $212.72	Get Quote
Master Electronics	4TL11-50M		51			1 $408.28 10 $396.13 100 $142.44 1000 $142.44 10000 $142.44	Buy Now
Honeywell Sensing and Control 2TL11-50K SWITCH TOGGLE DPDT 11A 125V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2TL11-50K	Bulk			1	1 $123.06 10 $123.06 100 $123.06 1000 $123.06 10000 $123.06	Buy Now
Mouser Electronics	2TL11-50K					1 - 10 - 100 $117.2 1000 $117.2 10000 $117.2	Get Quote
Master Electronics	2TL11-50K					1 - 10 - 100 $102.3 1000 $102.3 10000 $102.3	Buy Now

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TL115 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TL1150AF070Q		E-SWITCH	Thru-hole tact switch with long operating life (1,000,000 cycles) and 2-lead design		Original	PDF
TL1150 SERIES		E-SWITCH	Thru-hole tact switch with long operating life (1,000,000 cycles) and 2-lead design		Original	PDF

TL115 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TL205 Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147 Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's	Original	PTFC260202FC PTFC260202FC 10-watt H-37248-4 TL205 TL2322 RO4350 tl233 tl241 587-1818-2-ND c201 017 C202 tl147	PDF
transistor TL131 Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	PTFB212507SH PTFB212507SH 200-watt H-34288G-4/2 transistor TL131 TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 LM78L05ACMND	PDF
TL1 series Abstract: TL112 tl117 TL119 TL113 TL1-01 TL1-02 TL1-03 TL1-06 TL1-07 Text: TL1 Series Toroids C 1 F D 2 B A E 2E COIL INSTALLED N MOUNT STANDARD PACKAGE A Mount - 1 Mount - 2 Mount - 3 Mount - 4 Mount - 5 .340 .450 .450 .600 .700 B C NOMINAL .60 .65 .85 .95 1.25 NOMINAL ± .005 .578 .648 .828 .948 1.248 D .29 .325 .415 .475 .625	Original	TL1-18 TL1-19 TL1-16 TL1-17 TL1-12 TL1 series TL112 tl117 TL119 TL113 TL1-01 TL1-02 TL1-03 TL1-06 TL1-07	PDF
c102 TRANSISTOR Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113 Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113	PDF
tl249 Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242 Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242	PDF
TL235 Abstract: No abstract text available Text: PTVA030121EA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency	Original	PTVA030121EA PTVA030121EA H-36265-2 TL235	PDF
Untitled Abstract: No abstract text available Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.	Original	PTFA091503EL PTFA091503EL 150-watt, H-33288-6	PDF
LM7805ACH-ND Abstract: TL174 tl173 PTVA035002EV V1 Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features	Original	PTVA035002EV PTVA035002EV H-36275-4 a035002 50stances. LM7805ACH-ND TL174 tl173 PTVA035002EV V1	PDF
C109 ceramic capacitor Abstract: TL235 Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	PTFB213208FV PTFB213208SV 320-watt H-34275G-6/2 C109 ceramic capacitor TL235	PDF
PTFB212507SH Abstract: No abstract text available Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	PTFB212507SH PTFB212507SH 200-watt	PDF
TRANSISTOR tl131 Abstract: tl239 Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include	Original	PTFB082817FH PTFB082817FH H-34288-4/2 TRANSISTOR tl131 tl239	PDF
C205 Abstract: No abstract text available Text: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications	Original	PTFB191501E PTFB191501F PTFB191501E PTFB191501F 150-watt H-36248-2 H-37248-2 C205	PDF
PTFB090901EA Abstract: No abstract text available Text: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced	Original	PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2	PDF
TL272 Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148 Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use	Original	PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 TL272 TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148	PDF

TL145 Abstract: TL245 transistor c111 C216 TL152 Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152	PDF
fet 4712 Abstract: NFM18PS105R0J30 ptfb193404f LM780L05ACM-ND R804 4712 tl2032 mp 1046 TL1013 0805W220JT Text: PTFB193404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990	Original	PTFB193404F PTFB193404F 340-watt H-37275-6/2 P03-A, fet 4712 NFM18PS105R0J30 LM780L05ACM-ND R804 4712 tl2032 mp 1046 TL1013 0805W220JT	PDF
TL225 Abstract: ATC100A6R2CW150X Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PTFA220121M PTFA220121M 12-watt PG-SON-10 TL225 ATC100A6R2CW150X	PDF
TRANSISTOR tl131 Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117 Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications	Original	PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt TRANSISTOR tl131 ptfb192503 tl134 TL105B TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117	PDF
TRANSISTOR tl131 Abstract: tl134 PTFB212503FL tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA Text: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power	Original	PTFB212503EL PTFB212503FL PTFB212503EL PTFB212503FL 240-watt TRANSISTOR tl131 tl134 tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA	PDF
hy 1418 Abstract: tl117 tl111 Text: TL1 Series Toroids 1 C F E 2E 2 D A B COIL INSTALLED N MOUNT STANDARD PACKAGE A Mount - 1 Mount - 2 Mount - 3 Mount - 4 Mount - 5 .340 .450 .450 .600 .700 B C NOMINAL .60 .65 .85 .95 1.25 NOMINAL ± .005 .578 .648 .828 .948 1.248 D E TYPICAL .110 .150 .150	Original	TL1-01 TL1-02 TL1-03 TL1-04 TL1-05 TL1-06 TL1-07 TL1-08 TL1-09 TL1-10 hy 1418 tl117 tl111	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
PTFB090901EA Abstract: No abstract text available Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2	PDF
TL1150AF070Q Abstract: No abstract text available Text: n1.20 [.047 in] 2 C RELEASED FOR PRODUCTION 16736 16674 PCR NO B A REV TN 11/17/06 BY TN 12/7/06 DATE BGL 12/20/10 THE INFORMATION CONTAINED IN THIS DOCUMENT IS PROPRIETARY TO E-SWITCH AND IS NOT TO BE COPIED OR TRANSFERRED DESCRIPTION CHANGE DIMS was 5.75 & 4.9	Original	30VDC, 600VAC, 2002/95/EC TL1150AF070Q Q970065 TL1150AF070Q	PDF
c102 TRANSISTOR Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M Text: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency	Original	PTFA220041M PTFA220041M PG-SON-10 c102 TRANSISTOR LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217	PDF

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TL115 Search Results

TL115 Price and Stock

E-Switch Inc TL1150AF070Q

STMicroelectronics STL115N10F7AG

Honeywell Sensing and Control 2TL11-50

Honeywell Sensing and Control 4TL11-50M

Honeywell Sensing and Control 2TL11-50K

TL115 Datasheets (2)

TL115 Datasheets Context Search

TL205

transistor TL131

TL1 series

c102 TRANSISTOR

tl249

TL235

Untitled

LM7805ACH-ND

C109 ceramic capacitor

PTFB212507SH

TRANSISTOR tl131

C205

PTFB090901EA

TL272

TL145

fet 4712

TL225

TRANSISTOR tl131

TRANSISTOR tl131

hy 1418

schematic diagram atx Power supply 500w

PTFB090901EA

TL1150AF070Q

c102 TRANSISTOR