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    TL822 Search Results

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    TL822 Price and Stock

    Honeywell Sensing and Control 1TL82-2

    SWITCH TOGGLE SPST 15A 125V
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    DigiKey 1TL82-2 Bulk 50
    • 1 -
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    • 100 $82.668
    • 1000 $82.668
    • 10000 $82.668
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    Mouser Electronics 1TL82-2
    • 1 -
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    • 100 $144.59
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    RS 1TL82-2 Bulk 48 Weeks 50
    • 1 -
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    • 100 $129.95
    • 1000 $129.95
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    Master Electronics 1TL82-2
    • 1 -
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    • 100 $84.39
    • 1000 $84.39
    • 10000 $84.39
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    NIC Components Corp NSTL822M500V90X191F

    CAP LDD90X1918200F500VDC - Boxed Product (Development Kits) (Alt: NSTL822M500V90X191F)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas NSTL822M500V90X191F Box 8
    • 1 $199
    • 10 $199
    • 100 $170.5714
    • 1000 $170.5714
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    GMS Instruments TL822

    TL822
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical TL822 1 1
    • 1 $79.989
    • 10 $23.465
    • 100 $19.552
    • 1000 $19.552
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    Honeywell Sensing and Control 1TL822

    Sealed Oi Switch |Honeywell 1TL822
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    Newark 1TL822 Bulk 50
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    • 100 $101.27
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    Extech by FLIR TL822

    Accessories GRIPPER CLIP
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    Onlinecomponents.com TL822 2
    • 1 $61.53
    • 10 $18.05
    • 100 $15.04
    • 1000 $15.04
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    Master Electronics TL822 2
    • 1 $61.53
    • 10 $18.05
    • 100 $15.04
    • 1000 $15.04
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    TL822 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TL817

    Abstract: TL934 TL804 TL802 TL902 TL941 TL928 tl945 TL84 TL805
    Text: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in


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    PTFB241402F PTFB241402F H-37248-4 TL817 TL934 TL804 TL802 TL902 TL941 TL928 tl945 TL84 TL805 PDF

    C909

    Abstract: tL920 TL823 TL817 PTFB241402F
    Text: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular ampliier applications in


    Original
    PTFB241402F PTFB241402F H-37248-4 C909 tL920 TL823 TL817 PDF

    TL817

    Abstract: TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945
    Text: PTFB241402F Customer-Specific Spec — Not for General Release High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in


    Original
    PTFB241402F PTFB241402F H-37248-4 TL817 TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945 PDF

    TL872

    Abstract: TB825 TL 873 TL-872 TL-861 TL812 TB845 tl837 TL-825 tl840
    Text: BROADBAND SERIES TI^8/TB-8-A SP8T SWITCH REFLECTIVE AND ABSORPTIVE 0.02-18 GHz i GENERAL SPECIFICATIONS: Frequency Coverage: RF Impedance: RF Power: DC Requirements: Temperature Information: Switching Speed: Environment: Connectors: 0.02 to 18.0 GHz. 50 OHMS.


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