TL817

Abstract: TL934 TL804 TL802 TL902 TL941 TL928 tl945 TL84 TL805
Contextual Info: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in

Contextual Info: SGS-THOMSON Rfl[ra am!I(OT(Q KS ETL9444/ETL9445 TL9344/TL9345 NMOS MICROCONTROLLERS • ■ ■ ■ ■ LOW COST POWERFUL INSTRUCTION SET 2k x 8 ROM, 1 2 8 x 4 RAM 23 I/O LINES (ETL9444) TRUE VECTORED INTERRUPT, PLUS REST­ ART ■ THREE-LEVEL SUBROUTINE STACK

C909

Abstract: tL920 TL823 TL817 PTFB241402F
Contextual Info: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular ampliier applications in

TL817

Abstract: TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945
Contextual Info: PTFB241402F Customer-Specific Spec — Not for General Release High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in