Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TL945 Search Results

    SF Impression Pixel

    TL945 Price and Stock

    Brady Worldwide Inc PTL-9-457

    0.650 In X 0.200 In (16.51 Mm X 5.08 Mm) |Brady PTL-9-457
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark PTL-9-457 SPOOL 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    CSR plc TL945-B2

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange TL945-B2 124
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Essentra Components STL-9-450-8-01

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DB Roberts STL-9-450-8-01
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    TL945 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TL817

    Abstract: TL934 TL804 TL802 TL902 TL941 TL928 tl945 TL84 TL805
    Text: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in


    Original     		PTFB241402F PTFB241402F H-37248-4 TL817 TL934 TL804 TL802 TL902 TL941 TL928 tl945 TL84 TL805 PDF

    C909

    Abstract: tL920 TL823 TL817 PTFB241402F
    Text: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular ampliier applications in


    Original     		PTFB241402F PTFB241402F H-37248-4 C909 tL920 TL823 TL817 PDF

    TL817

    Abstract: TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945
    Text: PTFB241402F Customer-Specific Spec — Not for General Release High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in


    Original     		PTFB241402F PTFB241402F H-37248-4 TL817 TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945 PDF

    RF1113

    Abstract: 43RF1113 tl945 IBM REV 2.7
    Text: I = = = = '= IBM 43RF1113 IBM 43RF1113 EV Advance Silicon-Germ anium 3-V PCS-Band: GSM Tri-Band LNA Features • 945M H z/1900M H z center frequency for GSM • E fficiency and pow er m anagem ent, ideal for b attery m obile design Tri-Band • Flexible design w ith independent LNA input and


    OCR Scan     		z/1900M 43RF1113 RF1113 43RF1113, F1113 43RF113 tl945 IBM REV 2.7 PDF