2955g
Abstract: NVF2955T1G nvf2955 A1 SOT-223 MOSFET NVF2955PT1G NTF2955T1G
Text: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • • • • TMOS7 Design for low RDS on Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified − NVF2955, NVF2955P These Devices are Pb−Free and are RoHS Compliant
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NTF2955,
NVF2955,
NVF2955P
OT-223
NTF2955/D
2955g
NVF2955T1G
nvf2955
A1 SOT-223 MOSFET
NVF2955PT1G
NTF2955T1G
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MTP33N10E
Abstract: AN569 mosfet transistor 400 volts.100 amperes
Text: MOTOROLA Order this document by MTP33N10E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP33N10E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 33 AMPERES 100 VOLTS
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MTP33N10E/D
MTP33N10E
MTP33N10E/D*
MTP33N10E
AN569
mosfet transistor 400 volts.100 amperes
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AN569
Abstract: MTD1N80E SMD310
Text: MOTOROLA Order this document by MTD1N80E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD1N80E Motorola Preferred Device TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS on = 12 OHM N–Channel Enhancement–Mode Silicon Gate
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MTD1N80E/D
MTD1N80E
MTD1N80E/D*
AN569
MTD1N80E
SMD310
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AN569
Abstract: MTP12N06EZL mosfet transistor 400 volts.100 amperes
Text: MOTOROLA Order this document by MTP12N06EZL/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP12N06EZL N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.180 OHM This advanced TMOS power FET is designed to withstand high
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MTP12N06EZL/D
MTP12N06EZL
MTP12N06EZL/D*
AN569
MTP12N06EZL
mosfet transistor 400 volts.100 amperes
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AN569
Abstract: MTB9N25E SMD310
Text: MOTOROLA Order this document by MTB9N25E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB9N25E Motorola Preferred Device TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS on = 0.45 OHM N–Channel Enhancement–Mode Silicon Gate
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MTB9N25E/D
MTB9N25E
MTB9N25E/D*
AN569
MTB9N25E
SMD310
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AN569
Abstract: MTB2N60E SMD310
Text: MOTOROLA Order this document by MTB2N60E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB2N60E Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS on = 3.8 OHM N–Channel Enhancement–Mode Silicon Gate
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MTB2N60E/D
MTB2N60E
AN569
MTB2N60E
SMD310
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AN569
Abstract: MTD10N10EL SMD310
Text: MOTOROLA Order this document by MTD10N10EL/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD10N10EL Motorola Preferred Device TMOS POWER FET 10 AMPERES 100 VOLTS RDS on = 0.22 OHM
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MTD10N10EL/D
MTD10N10EL
MTD10N10EL/D*
AN569
MTD10N10EL
SMD310
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AN569
Abstract: MTB3N100E SMD310 LS 1316
Text: MOTOROLA Order this document by MTB3N100E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB3N100E Motorola Preferred Device TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS on = 4.0 OHM N–Channel Enhancement–Mode Silicon Gate
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MTB3N100E/D
MTB3N100E
MTB3N100E/D*
AN569
MTB3N100E
SMD310
LS 1316
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MGSF3441VT1
Abstract: MGSF3441VT3
Text: MOTOROLA Order this document by MGSF3441VT1/D SEMICONDUCTOR TECHNICAL DATA MGSF3441VT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–
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MGSF3441VT1
MGSF3441VT1
MGSF3441VT3
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MTD5N10
Abstract: MTD6N10E AN569 SMD310 SOT 23 MOSFET
Text: MOTOROLA Order this document by MTD6N10E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD6N10E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS on = 0.400 OHM
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MTD6N10E/D
MTD6N10E
MTD6N10E/D*
MTD5N10
MTD6N10E
AN569
SMD310
SOT 23 MOSFET
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paste
Abstract: AN569 MTD3N25E SMD310
Text: MOTOROLA Order this document by MTD3N25E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD3N25E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET
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MTD3N25E
MTD3N25E/D*
paste
AN569
MTD3N25E
SMD310
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AN569
Abstract: MTD2955 MTD2955E SMD310 MTD2955 sot-223 MTD2955E-D
Text: MOTOROLA Order this document by MTD2955E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD2955E Motorola Preferred Device P–Channel Enhancement–Mode Silicon Gate TMOS POWER FET
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MTD2955E/D
MTD2955E
MTD2955e/D*
AN569
MTD2955
MTD2955E
SMD310
MTD2955 sot-223
MTD2955E-D
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AN569
Abstract: MTB16N25E SMD310
Text: MOTOROLA Order this document by MTB16N25E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB16N25E Motorola Preferred Device TMOS POWER FET 16 AMPERES 250 VOLTS RDS on = 0.25 OHM N–Channel Enhancement–Mode Silicon Gate
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MTB16N25E
MTB16N25E/D*
AN569
MTB16N25E
SMD310
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MTP10N60E7-D
Abstract: AN569 MTP10N60E7 MTP10n60 MTP10N60E
Text: MTP10N60E7 Preferred Device Advance Information TMOS 7 E-FET High Energy Power FET N–Channel Enhancement–Mode Silicon Gate http://onsemi.com This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient
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MTP10N60E7
r14153
MTP10N60E7/D
MTP10N60E7-D
AN569
MTP10N60E7
MTP10n60
MTP10N60E
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MOTOROLA TRANSISTOR 279
Abstract: motorola 039 motorola mosfet TMOS E-FET zener motorola MTB50N06EL Motorola 406 Motorola TR 229 418B-02
Text: MOTOROLA Order this document by MTB50N06EL/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTB50N06EL TMOS E-FET. Power Field Effect Transistors D2PAK for Surface Mount Logic Level TMOS TMOSāāā N–Channel Enhancement–Mode Silicon Gate Motorola Preferred Device
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MTB50N06EL/D
MTB50N06EL
MTB50N06EL/D*
MOTOROLA TRANSISTOR 279
motorola 039
motorola mosfet
TMOS E-FET
zener motorola
MTB50N06EL
Motorola 406
Motorola TR 229
418B-02
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TMOS 80A
Abstract: NTL4502N NTL4502NT1
Text: NTL4502N Product Preview Quad N−Channel Module Features. • • • • • • • • • Four N-Channel TMOS in a Single Package High Input Impedance for Ease of Drive Ultra Low On-resistance RDS(on Provides Low Conduction Losses Very Fast Switching Times Provides Low Switching Losses
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NTL4502N
NTL4502N
NTL4502N/D
TMOS 80A
NTL4502NT1
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MTW23N25E
Abstract: AN569
Text: MOTOROLA Order this document by MTW23N25E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high
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O-247
MTW23N25E/D*
TransistorMTW23N25E/D
MTW23N25E
AN569
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MTP55N06Z
Abstract: TMOS E-FET
Text: MOTOROLA Order this document by MTP55N06Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP55N06Z TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 55 AMPERES 60 VOLTS RDS on = 18 mΩ This advanced high voltage TMOS E–FET is designed to
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MTP55N06Z/D
MTP55N06Z
MTP55N06Z
TMOS E-FET
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mj 1504 transistor
Abstract: AN569 MTV32N20E SMD310 mj 1504 scheme
Text: MOTOROLA Order this document by MTV32N20E/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTV32N20E TMOS E-FET. Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 32 AMPERES 200 VOLTS RDS on = 0.075 OHM N–Channel Enhancement–Mode Silicon Gate
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MTV32N20E/D
MTV32N20E
MTV32N20E/D*
mj 1504 transistor
AN569
MTV32N20E
SMD310
mj 1504 scheme
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AN569
Abstract: MTY14N100E 340G
Text: MOTOROLA Order this document by MTY14N100E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY14N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 1000 VOLTS
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MTY14N100E/D
MTY14N100E
MTY14N100E/D*
AN569
MTY14N100E
340G
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AN569
Abstract: MTP8N06E
Text: MOTOROLA Order this document by MTP8N06E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP8N06E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 8.0 AMPERES 60 VOLTS
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MTP8N06E/D
MTP8N06E
MTP8N06E/D*
AN569
MTP8N06E
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mosfet cross reference
Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local
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MGSF1N03LT1
Abstract: MGSF1N03LT3
Text: MOTOROLA Order this document by MGSF1N03LT1/D SEMICONDUCTOR TECHNICAL DATA MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–
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MGSF1N03LT1/D
MGSF1N03LT1
MGSF1N03LT1/D*
MGSF1N03LT1
MGSF1N03LT3
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMDF3P03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F 3P 03H D Medium Power Surface Mount Products M o to ro la P r e fe r re d D ev ic e TMOS Dual P-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 30 VOLTS
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MMDF3P03HD/D
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