2SC3883
Abstract: 2N2250 S2000A 2N2222B 2N2244 STi-812 MRF239 2N2362 STI-801 2N2245
Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 5 A, 2S01398 2S01402 2S01651 2S01655 2SC2791 2SC2793 2SC3214 2S01185 2S01186 SOT723 ~~6~~~0 15 20 2SC3322 SOT41303 SOT41303 SML41304 2SC3060 SOT41304 SOT41304 SML812 ~~t:~;05 25 30 OTS812 OTS812 OTS812
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2S01398
2S01402
2S01651
2S01655
2SC2791
2SC2793
2SC3214
2S01185
2S01186
OT723
2SC3883
2N2250
S2000A
2N2222B
2N2244
STi-812
MRF239
2N2362
STI-801
2N2245
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rca 2n2147
Abstract: 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200
Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 714 BFX69A BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 CX904 CX904 2SC943 2SC943 2SC943 KT503B BCW90B BCW90B 2N731 Manufacturer
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BFX69A
2N1594
BCW94A
2SC366G
2N1644A
2N2192
2N2192A
2N2192B
MPS650
rca 2n2147
2N2207
2n2183 rca
2N2196
2N2214
2N2161
2N2222A motorola
2N2204
2n2162
2N2200
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PN2222A MOTOROLA
Abstract: valvo emihus philco-ford VALVO GMBH 2SC1330 DIODE 6AA 2N709A Elcoma KT503A
Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate
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RN5816
RN5B16
RN5818
HSE125
HSE210
HSE171
2Nl051
2N2480
2N2479
PN2222A MOTOROLA
valvo
emihus
philco-ford
VALVO GMBH
2SC1330
DIODE 6AA
2N709A
Elcoma
KT503A
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2N2222B
Abstract: 2N2280 2N2307 BSY87 2SC696 Elcoma 2N2244 2N1564 2n2382 Delco
Text: LOW•POWER SILICON NPN Item Number Part Number Manufacturer >= 50 V, Cont'd 2NS98 2N1492 2N2514 2N339A 2N545 2N719A 2N1975 2N912 2N2520 2N757A See See See See See See See See See See 10 15 20 25 30 35 40 2N758B BC142 2N1564 2N734 2N754 2N742 2N742A 2N560
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2NS98
2N1492
2N2514
2N339A
2N545
2N719A
2N1975
2N912
2N2520
2N757A
2N2222B
2N2280
2N2307
BSY87
2SC696
Elcoma
2N2244
2N1564
2n2382
Delco
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transitron
Abstract: rca 2n1701 BFY46 2N1711 MOTOROLA 2SC109A 2N1666 2N1619 2N1565 2SC1364 ELECTRON CORP
Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 2N2389 BFY34 SA2710 2SC734 2SC2000M MPS6591 2N2253 2N2253 Sl100 501613 2SC109A 2S0220 A5T2193 2N2351 2N2351A 2N5262 MPS9434 UPI956 HSE146 2SC216
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2N2193B
NB312E
NB312F
NB312X
NB312Y
2SC486
2N2389
BFY34
SA2710
transitron
rca 2n1701
BFY46
2N1711 MOTOROLA
2SC109A
2N1666
2N1619
2N1565
2SC1364
ELECTRON CORP
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2n2224
Abstract: 2N2222B 2N2244 2N4418 2N2374 2SC321H 2N2250 ESM2369 rca 2N2270 2N2245
Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 -60 65 - 70 EN914 2N708 2N914A 2N914A 2N914A 40219 40219 40221 40221 BSY19 BSY19 BSY19 2N3605A 2N3606A 2S95A 2S95A 2N1708A 2N321 0 BF165 2SC321H 2N2319 2N4264 2N2272
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EN914
2N708
2N914A
BSY19
2N3605A
2N3606A
2n2224
2N2222B
2N2244
2N4418
2N2374
2SC321H
2N2250
ESM2369
rca 2N2270
2N2245
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PDF
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bcy591x
Abstract: 2N6429A 2N2196 2N2147 2N2214 2N2161 2SC538A BCW66RG 2N2207 BC521
Text: LOW-POWER SILICON NPN Item Number Part Number 10 BC382 KSC1072 2SC538A 2SC538A 2SC538A BCX59-9 BCX70J BCY591X TBC337A BCW66RG gg~~iB~ 15 20 BCY59B BCY59B BC171 JE9014 JC501R M02975 2N2916A BFY76 ~~~~~~B BCY59-B BCY59C BCY59C BCY55 BCX59-10 BCY59X BC237C BC237C18
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BC382
KSC1072
2SC538A
BCX59-9
BCX70J
BCY591X
TBC337A
BCW66RG
2N6429A
2N2196
2N2147
2N2214
2N2161
2N2207
BC521
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2SC1675L
Abstract: 2N2196 2N2214 2N2161 2N2204 LOW-POWER SILICON NPN BF235 TL3643 2n2222 to92 BFX97
Text: RF LOW-POWER SILICON NPN Item Part Number Number V BR CEO 5 10 15 20 PN2221 2N2218 BSX60 2N2846 2N3015 MPS2222 MPS6532 2N2845 MMBT2222 2N2961 PH2222 UPI2218 2N2219 2N2538 2N3981 2N3981 2N3981 2SC773 2N5028 2N5028 ~~~g~ 25 30 35 -40 45 50 2N2960 A5T2222 BFX94A
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3SM diode
Abstract: 2N2243 2N2222B 2N2244 2N2282 2N2250 2N2316 2N2249 2N2303 SOT-23 2N2306
Text: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31
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MPS5858
BFR50
TIPP31B
ST4341
BSW65
2N1572
2N738
2N2517
2N755
3SM diode
2N2243
2N2222B
2N2244
2N2282
2N2250
2N2316
2N2249
2N2303 SOT-23
2N2306
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PDF
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2N1674
Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
Text: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31
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MPS5858
BFR50
TIPP31B
ST4341
BSW65
2N1572
2N738
2N2517
2N755
2N1674
Emihus
2N1605A
BC447
2N1724
2N2891
2N1666
BSW39
2N1664
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PDF
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BC352* CSR
Abstract: csr BC352 2N936 Emihus 2N828 MPS5143 Bc352 LOW-POWER SILICON PNP 2N850 transitron
Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 30 Motorola Motorola See Index See Index See Index See Index See Index See Index See Index See Index ~ee In~ex See Index Motorola See Index See Index Space Power Genrl Diode Diode Trails See Index See Index
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MPS5142
MPS5143
2N998
2N3677
2N2411
2N1991
PN5143
2N5143
2N2802
2N2803
BC352* CSR
csr BC352
2N936
Emihus
2N828
Bc352
LOW-POWER SILICON PNP
2N850
transitron
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PDF
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2N907 PNP
Abstract: 2N1429 transitron Emihus 2N2425 2N2424 2N828 2N850 2N907 LOW-POWER SILICON PNP
Text: LOW-POWER SILICON PNP Item Number Part Number 10 2N2165 2N2166 2N2162 2N2163 2N2167 2N2164 2N1676 2N1677 2N2002 2N2003 ~~~~~~ 15 20 2N3764A 2N3764A 2N2424 BC201 2N3319 2N2280 2N2281 2N864 ~N14~~ 25 30 2N1428 2N1429 2N864A 2N864A 2N864A 2N4006 2N2177 2N2178
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2N2165
2N2166
2N2162
2N2163
2N2167
2N2164
2N1676
2N1677
2N2002
2N2003
2N907 PNP
2N1429
transitron
Emihus
2N2425
2N2424
2N828
2N850
2N907
LOW-POWER SILICON PNP
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PDF
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BUK437-500A
Abstract: BUK437-500B buk437 S1216
Text: Philips Components BUK437-500A BUK437-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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OCR Scan
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BUK437-500A
BUK437-500B
BUK437
-500A
-500B
M89-1142/RST
BUK437-500A
BUK437-500B
S1216
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PDF
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D676A
Abstract: BD675A BD676A BD677A BD678A BD679A BD680A
Text: Preliminary specification Philips Semiconductors BD676A/678A/680A Silicon Darlington power transistors 5bE D PHILIPS INTERNATIONAL DESCRIPTION QUICK REFERENCE DATA PNP epitaxial base transistors in a monolithic Darlington circuit in a TO-126 SOT32 plastic envelope
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OCR Scan
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O-126
BD675A,
BD677A
BD679A
D676A/678A/680A
711002b
0042c
BD676A
BD678A
D676A
BD675A
BD676A
BD678A
BD680A
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PDF
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BLF522
Abstract: URA417 4312 020 366 3909
Text: Philips Semiconductora Product specification UHF power MOS transistor BLF522 PHILIPS IN T E RN AT IO NA L FEATURES 7 1 3 ,0 fi2 b OOMaTMS STQ M P H I N PIN CONFIGURATION High power gain Easy power control Gold metallization Good thermal stability Withstands full load mismatch
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OCR Scan
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OT171
OT171
BLF522
711Dfl2b
711005b
BLF522
URA417
4312 020 366
3909
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PDF
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Untitled
Abstract: No abstract text available
Text: ¿ 1.30 P21 S0 WP P20(SD,'CPj CENTER OF CONNECTER NOTES • I. MATERIAL: SEE TABLE p l a t in g : s e e t a b u 24. l£ i§ J|.;SD HHCJ (g ) day - month 4 _ RûHS COMPLIANT PRODUCT CLE'.IRICAL HARACTEfilSTlCï . CUFWEMT RATlMG.OS-A '.VU HSTANDING .'0LTAGE:5OOV - . C".
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OCR Scan
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PDF
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PCIB24W
Abstract: No abstract text available
Text: SK3692 SHEET i OF I REVISION ICÛH APP 19 T IT O 1 7 5 9 3 w DATE REV 4 -1 2 »1 N ! POTITRQNC IN D W R E P BELEyEB THE M M ON THIS □RAMflNS TD K ISL IM L C . SM CE THE TECHNICAL n raraiA T D N a bve n m e o f d-wrgc. t h e u s e r EMPLOTS SUCH INFORMATION AT HB OHN DISCRETIDN
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OCR Scan
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SK3692
PCIB24W400A1
E39tfnva
PCIB24W
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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OCR Scan
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BUK436W-800A/B
BUK436
-800A
-800B
OT429
T0247)
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PDF
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K438-1000A
Abstract: BUK438-1000A BUK438-1000B k4381
Text: 7=3 f - Æ Ph ilips C o m p o n e n ts Data sheet status Preliminary specification date o f issue March 1991 BUK438-1000A/B PowerMOS transistor SbE D PH IL IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a
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OCR Scan
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BUK438-1OOOA/B
711002b
BUK438
-1000A
-1000B
BUK438-1000A/B
711062b
T-39-I5
K438-1000A
BUK438-1000A
BUK438-1000B
k4381
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PDF
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BUK437-600B
Abstract: BUK437-600A BUK437 TNT sot
Text: BUK437-600A BUK437-600B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode liekJ-eftect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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OCR Scan
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BUK437-600A
BUK437-600B
BUK437
-600A
-600B
00/nC
M89-114imST
BUK437-600B
BUK437-600A
TNT sot
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PDF
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BUK637-400A
Abstract: BUK637-400B
Text: Philips Components BUK637-400A BUK637-400B PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode lield-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable for motor control
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OCR Scan
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BUK637-400A
BUK637-400B
BUK637
-400A
-400B
M89-1166/RC
BUK637-400A
BUK637-400B
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE E5E D ^ 5 3 1 3 1 Q030b7D S PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable
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OCR Scan
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Q030b7D
BUK637-400A
BUK637-400B
BUK637
-400A
D0S0h74
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PDF
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pir 500b
Abstract: No abstract text available
Text: N AtlER PHILIPS/DISCRETE E5E D • fafa53*131 Q020b6Q 5 PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.
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OCR Scan
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Q020b6Q
BUK637-500A
BUK637-500B
BUK637-500C
31-is*
BUK637
bb53T31
0020bfl4
pir 500b
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors b b 5 3 ^ 31 DDSTEm M il H A P X UHF power transistor BLV194 bTE D — — AUER PHILIPS/DISCRETE FEATURES • Gold metallization ensures excellent reliability. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.
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OCR Scan
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BLV194
MRC099
MRC097
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PDF
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