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    TO-218 PACKAGE Search Results

    TO-218 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
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    TO-218 PACKAGE Price and Stock

    Mode Electronics 54-218-0

    Switch Access Rotary Switch Round Knob
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 54-218-0 556
    • 1 -
    • 10 -
    • 100 $1.58
    • 1000 $1.17
    • 10000 $1.06
    		Buy Now

    Staffall 13-218-2-01

    Turret Terminal - 8.68mm Overall Length - 3.17mm Dia - Brass - Silver Finish.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 13-218-2-01 15
    • 1 $32.79
    • 10 $32.79
    • 100 $14.87
    • 1000 $14.87
    • 10000 $14.87
    		Buy Now

    Philmore 48-218

    Cable Assembly Power Cord 1.8m 18AWG 3 POS Power PL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 48-218 3
    • 1 $4.33
    • 10 $3.94
    • 100 $3.19
    • 1000 $2.82
    • 10000 $2.73
    		Buy Now

    JT&T Products 218-1F

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 218-1F 2
    • 1 $59.33
    • 10 $14.83
    • 100 $12.03
    • 1000 $11.41
    • 10000 $11.41
    		Buy Now

    JT&T Products 218-2F

    2 10 Amp Alligator Test Clip w/ Red Vinyl Boot 25 Pcs
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 218-2F 2
    • 1 $59.33
    • 10 $14.83
    • 100 $12.03
    • 1000 $11.41
    • 10000 $11.41
    		Buy Now
    Find more TO-218 PACKAGE price and stock on Findchips.com

    TO-218 PACKAGE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TO-218 Package Intersil SINGLE LEAD JEDEC STYLE TO-218 PLASTIC PACKAGE Original PDF

    TO-218 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    triac 239

    Abstract: to239 press-fit triac to202-3
    Text: 15.0 15.0 SENSITIVE GATE UL RECOGNIZED NO NO NO NO NO YES YES YES YES NO YES YES YES NO NO NO YES NO NO NO NO NO NO 25 YES NO 25 YES YES YES YES 8 10 12 14 14 14 16 18 18 18 25 16.0 TO-218 YES NO 16.0 TO-218 NO NO 25.0 TO-218 YES NO 25.0 TO-218 NO NO 25.0


    Original     		PDF O-202 O-220 O-218 triac 239 to239 press-fit triac to202-3

    Untitled

    Abstract: No abstract text available
    Text: SIDACtor Protection Thyristors High Surge Current Protection 5kA Series - TO-218 RoHS Description The 5kA Series are SIDACtor® devices designed to protect equipment located in high exposure environments from severe overvoltage transients. Packaged in a robust TO-218 package, the 5kA Series is


    Original     		PDF O-218 O-218 E133083 tube/10

    TO218 package

    Abstract: marking p1900me JESD22-A101 P1500ME P1500MEL P1900ME P1900MEL P2300ME P2300MEL TIA-968-A
    Text: SIDACtor Protection Thyristors High Surge Current Protection 5kA Series - TO-218 Description The 5kA Series are SIDACtor® devices designed to protect equipment located in high exposure environments from severe overvoltage transients. Packaged in a robust TO-218 package, the 5kA Series is


    Original     		PDF O-218 O-218 E133083 TIA-968-A tube/10 TO218 package marking p1900me JESD22-A101 P1500ME P1500MEL P1900ME P1900MEL P2300ME P2300MEL TIA-968-A

    Untitled

    Abstract: No abstract text available
    Text: SIDACtor Protection Thyristors High Surge Current Protection 5kA Series - TO-218 Pb e3 RoHS Description The 5kA Series are SIDACtor® devices designed to protect equipment located in high exposure environments from severe overvoltage transients. Packaged in a robust TO-218 package, the 5kA Series is


    Original     		PDF O-218 O-218 E133083 tube/10

    TO-218 Package

    Abstract: TO218 package JESD22-A101 P1500ME P1500MEL P1900ME P1900MEL P2300ME P2300MEL TIA-968-A
    Text: SIDACtor Protection Thyristors High Surge Current Protection 5kA Series - TO-218 Description The 5kA Series are SIDACtor® devices designed to protect equipment located in high exposure environments from severe overvoltage transients. Packaged in a robust TO-218 package, the 5kA Series is


    Original     		PDF O-218 O-218 E133083 TIA-968-A 20/dard TO-218 Package TO218 package JESD22-A101 P1500ME P1500MEL P1900ME P1900MEL P2300ME P2300MEL TIA-968-A

    Untitled

    Abstract: No abstract text available
    Text: SIDACtor Protection Thyristors High Surge Current Protection 5kA Series - TO-218 Description The 5kA Series are SIDACtor® devices designed to protect equipment located in high exposure environments from severe overvoltage transients. Packaged in a robust TO-218 package, the 5kA Series is


    Original     		PDF O-218 O-218 E133083 TIA-968-A

    Untitled

    Abstract: No abstract text available
    Text: BDW83C HIGH CURRENT SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION The BDW83C is a silicon epitaxial-base NPN power monolithic Darlington mounted in Jedec TO-218 plastic package. It is intended for use in power linear and switching applications. 3 2 1 TO-218


    Original     		PDF BDW83C BDW83C O-218 O-218 BDW83Cerwise

    erf7530

    Abstract: 100 watt hf mosfet 12 volt ERF*7530 100 watt hf mosfet 80 watt hf mosfet ERF-7530 erf7530 mosfet ekl components ERF7530E MAR 703 MOSFET TRANSISTOR
    Text: ERF7530 RF Power MOSFET - 30MHz / 75 Watt PEP DESCRIPTION The ERF7530 is a MOSFET transistor developed for RF power amplifier applications in the HF frequency range. High power in a TO-218 package for an excellent ‘watt per dollar’ value. TO-218 PACKAGE OUTLINE & MARKINGS


    Original     		PDF ERF7530 30MHz ERF7530 O-218 30MHz 100 watt hf mosfet 12 volt ERF*7530 100 watt hf mosfet 80 watt hf mosfet ERF-7530 erf7530 mosfet ekl components ERF7530E MAR 703 MOSFET TRANSISTOR

    BW38-2G

    Abstract: 513002b02500g BW50-2G BW-50 heat sink to220 513201b02500g heat sink for TO220
    Text: TO-220 & TO-218 & TO-247 Heat Sinks Grease & Epoxy page112 Air Velocity—Feet Per Minute 400 200 600 800 100 Wide extruded heat sink with unequal channel widths on front and back can accommodate a TO-220, TO-218, or TO-247 device. Includes two solderable mounting pins which permit


    Original     		PDF O-220 O-218 O-247 page112 O-220, O-218, 513301B02500G O-247 BW38-2G 513002b02500g BW50-2G BW-50 heat sink to220 513201b02500g heat sink for TO220

    C67078-S3120-A2

    Abstract: No abstract text available
    Text: SIPMOS Power Transistors BUZ 346 BUZ 346 S2 ● N channel ● Enhancement mode ● Avalanche-rated Type VDS ID TC RDS on Package 1) Ordering Code BUZ 346 50 V 58 A 73 ˚C 0.018 Ω TO-218 AA C67078-S3120-A2 BUZ 346 S2 60 V 58 A 73 ˚C 0.018 Ω TO-218 AA


    Original     		PDF O-218 C67078-S3120-A2 C67078-S3120-A3 C67078-S3120-A2

    0443 005 D R

    Abstract: 2001 H1
    Text: TO-218 SINGLE LEAD JEDEC STYLE TO-218 PLASTIC PACKAGE E INCHES A A1 ØP Q H1 D TERM. 2 q L2 L1 TERM. 1 L R L3 15o c b J1 SYMBOL MIN MAX MILLIMETERS MIN MAX NOTES A 0.18 0.195 4.70 4.95 - A1 0.05 0.062 1.48 1.57 - b 0.43 0.443 c 0.01 0.022 D 0.80 0.820 20.3


    Original     		PDF O-218 O-218 0443 005 D R 2001 H1

    FREDFETs

    Abstract: No abstract text available
    Text: SELECTION GUIDE - FREDFETs V BR DSS (V ) 500 500 500 500 500 Ì* Id max (A) Type Package (Q ) 0.450 0.650 0.850 0.850 1.500 6.50 5.00 4.40 4.40 2.50 STH13N50D STH10N50D STH9N50D STP8N50D STP5N50D TO-218 TO-218 TO-218 TO-220 TO-220 ¿V 1D(max) Plot (A) (W)


    OCR Scan     		PDF O-218 O-220 O-220 STH13N50D STH10N50D STH9N50D STP8N50D STP5N50D FREDFETs

    LT 210D

    Abstract: LM318F
    Text: LM118/218/318 High-Speed O perational Am plifier Distinctive Characteristics • Electrically tested and optically inspected dice for hybrid manufacturers. • The LM118/218/318 are functionally, electrically, and pin-for-pin equivalent to the National LM118/218/318


    OCR Scan     		PDF LM118/218/318 LM118/218/318 LM118/218/318_ I--10V --14m LT 210D LM318F

    LM318F

    Abstract: AM318 lm118d 218F
    Text: Am118/218/318 High-Speed Operational Amplifier Distinctive Characteristics The A m 1 18/218/318 are functionally, electrically, and pin-for-pin equivalent to the National LM 118/218/318 • Slew rate 70V/^is • Small signal bandwidth 15MHz • Internal frequency compensation


    OCR Scan     		PDF Am118/218/318 15MHz LM318F AM318 lm118d 218F

    LM318L

    Abstract: LM318D 57AC LM318 LM318F lm118d LM118 DIE LM218H LD318 LM318H
    Text: LM118/218/318 H ig h -S p ee d O p e ra tio n a l A m p lifie r Distinctive Characteristics • The LM118/218/318 are functionally, electrically, and pin-for-pin equivalent to the National LM118/218/318 • Slew rate: 70 V /n s • Small signal bandwidth: 15M H z


    OCR Scan     		PDF LM118/218/318 LM118/218/318 15MHz 20ki2 27TR1C1 LM318L LM318D 57AC LM318 LM318F lm118d LM118 DIE LM218H LD318 LM318H

    b1625

    Abstract: EL200 107D 204C 213B
    Text: TO-218 Wideband RF/Pulse Transformers .5-500 MHz L6RIL GUARANTEED MINIMUM PERFORMANCE DATA TYPICAL PERFORMANCE :h:ft / SPECIFICATIONS FOR MODEL TO-218 Type 50 cfim unbalanced 200 ohm unbalanced - 1 dB Bandwidth, MHz Midband insertion loss dB VSWR .5-500


    OCR Scan     		PDF MIL-T-55631. O-218 O-218 MIL-STD-202E F-15-68 B162-58T MIL-G-45204, 111H1 b1625 EL200 107D 204C 213B

    6N60E

    Abstract: 10N100E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 6N100E 16N40E
    Text: ir TMOS TM OS Power MOSFETs Plastic Packages — TO-247 TO-247 CASE 340F-03 MTW PREFIX — Isolateci TO-218 Table 4 — N-Channel TO-247 VDss (Volts) Min RDS(on) I d (Ohms) (Amps) Max Device 1000 800 600 2 3 M TW 6N100E Table 5 — N- and P-Channel Isolated TO-218


    OCR Scan     		PDF O-247 O-218 340F-03 340B-03 O-247 6N100E 10N100E 6N60E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 16N40E

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS TEMPFET BTS 950 Preliminary Data VDS lD = 500 V = 9.0 A ^D S o n = • • • • 0 -8 TO-218 ^ N channel Enhancem ent m ode Tem perature sensor with th yristo r cha racteristic Package: TO-218 / 5 ') Type Ordering code BTS 950 Q 67078-A 5850-A 2


    OCR Scan     		PDF O-218 O-218 7078-A 850-A

    buz357

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistors • • • BUZ 357 N channel Enhancem ent mode Avalanche-rated Type V Ds Id BUZ 357 1000 V BUZ 358 1000 V ^ D S on Package 1> Ordering Code 5.1 A 2.0 £2 TO -218 AA C 67078-S3110-A2 4.5 A 2 . 6 £2 TO -218 AA C 67078-S3111-A2


    OCR Scan     		PDF 67078-S3110-A2 67078-S3111-A2 BUZ357 buz357

    DIODE BUZ

    Abstract: sis 661
    Text: SIEMENS BUZ 346 SIPMOS Power Transistors • • • N channel Enhancement mode Avalanche-rated Ordering Code Tc ^DS on Package 1> 58 A 73 °C 0.018 n TO -218 AA C67078-S3120-A2 58 A 73 ‘ C 0.018£2 TO -218 AA C67078-S3120-A 4 Type VDS ¡a BUZ 346 50 V


    OCR Scan     		PDF C67078-S3120-A2 C67078-S3120-A DIODE BUZ sis 661

    Untitled

    Abstract: No abstract text available
    Text: TO-218 Wideband RF/Pulse Transformers .5-500 MHz L6RIL GUARANTEED MINIMUM PERFORMANCE DATA SPECIFICATIONS FOR MODEL TO-218 Type 50 chm unbalanced 200 ohm unbalanced - 1 dB Bandwidth. MHz Midband insertion loss dB VSWR .5-500 75 2.25:1 NOTE: - 1 dB bandwidth is measured relative


    OCR Scan     		PDF O-218 F-15-68 B162-58T G-45204, MIL-STD-2026 MIL-T-55631.

    ISS 355

    Abstract: BUZ355A
    Text: SIEMENS SIPMOS Power Transistors • • BUZ 355 BUZ 356 N channel Enhancement mode Type VDS To ^DS on Package 1> B U Z 355 800 V 6.0 A 29 'C 1.5 Q TO-218 AA C67078-A3107-A2 B U Z 356 800 V 5.3 A 25 'C 2 .0 ÍÍ TO-218 AA C67078-A3108-A2 Ordering Code


    OCR Scan     		PDF O-218 C67078-A3107-A2 C67078-A3108-A2 ISS 355 BUZ355A

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 310 SI PMOS Power Transistors N channel Enhancement mode I Type </> • • ^DS on Package 1> Ordering Code BUZ 310 1000 V 2.5 A 5.0 Q TO-218 AA C67078-A3101-A2 BUZ 311 1000 V 2.3 A 6.0 n TO-218 AA C67078-A3102-A2 Maxim um Ratings Parameter


    OCR Scan     		PDF O-218 C67078-A3101-A2 C67078-A3102-A2

    buz385

    Abstract: buz 385
    Text: SIEMENS SIPMOS Power Transistors • • • BUZ 384 N channel Enhancement mode FREDFET Type ^DS Id ^DS on Package 1> O rdering Code BUZ 384 500 V 10.5 A 0.6 n TO -218 AA C67078-A3209-A2 BUZ 385 500 V 9.0 A 0.8 Q TO -218 AA C67078-A3210-A2 Maxim um Ratings


    OCR Scan     		PDF C67078-A3209-A2 C67078-A3210-A2 buz385 buz 385