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    TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON Search Results

    TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sd1026

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SD1026 Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·High DC current gain ·DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol


    Original     		PDF 2SD1026 O-247 O-247) 2sd1026

    TIP14x

    Abstract: TIP147G 80K-40 TIP140-D tip142g TIP141G
    Text: TIP140, TIP141, TIP142, NPN ; TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − • • • Min hFE = 1000 @ IC


    Original     		PDF TIP140, TIP141, TIP142, TIP145, TIP146, TIP147, TIP145 TIP146 TIP14x TIP147G 80K-40 TIP140-D tip142g TIP141G

    Untitled

    Abstract: No abstract text available
    Text: TIP140, TIP141, TIP142, NPN ; TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − • • • Min hFE = 1000 @ IC


    Original     		PDF TIP140, TIP141, TIP142, TIP145, TIP146, TIP147, TIP145 TIP146

    MJH11017G

    Abstract: No abstract text available
    Text: MJH11017, MJH11019, MJH11021 PNP MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features


    Original     		PDF MJH11017, MJH11019, MJH11021 MJH11018, MJH11020, MJH11022 MJH11022, MJH11017/D MJH11017G

    mjh11022g

    Abstract: MJH11020G MJH1102 mjh11019 mjh11
    Text: MJH11017, MJH11019, MJH11021 PNP MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features


    Original     		PDF MJH11017, MJH11019, MJH11021 MJH11018, MJH11020, MJH11022 MJH11022, MJH11017/D mjh11022g MJH11020G MJH1102 mjh11019 mjh11

    MJH11022

    Abstract: No abstract text available
    Text: MJH11017, MJH11019, MJH11021 PNP MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features


    Original     		PDF MJH11017, MJH11019, MJH11021â MJH11018, MJH11020, MJH11022â MJH11022, MJH11017/D MJH11022

    Untitled

    Abstract: No abstract text available
    Text: MJH6284 NPN , MJH6287 (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−speed switching motor control applications. Features • • • • Similar to the Popular NPN 2N6284 and the PNP 2N6287


    Original     		PDF MJH6284â MJH6287â 2N6284 2N6287 MJH6284/D

    TO247 CASE

    Abstract: No abstract text available
    Text: MJH6284 NPN , MJH6287 (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−speed switching motor control applications. Features • • • • Similar to the Popular NPN 2N6284 and the PNP 2N6287


    Original     		PDF MJH6284 MJH6287 2N6284 2N6287 MJH6284/D TO247 CASE

    transistors BDV64B

    Abstract: BDV65BG npn power amplifier circuit all number npn pnp transistor pin out data BDV64BG bdv64
    Text: BDV65B NPN , BDV64B (PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − HFE = 1000 (min) @ 5 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistors


    Original     		PDF BDV65B BDV64B BDV65B/D transistors BDV64B BDV65BG npn power amplifier circuit all number npn pnp transistor pin out data BDV64BG bdv64

    Untitled

    Abstract: No abstract text available
    Text: BDV65B NPN , BDV64B (PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − HFE = 1000 (min) @ 5 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistors


    Original     		PDF BDV65Bâ BDV64Bâ BDV65B/D

    power transistors cross reference

    Abstract: motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE
    Text: Bipolar Power Transistors In Brief . . . Motorola’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3 and TO–264. New products


    Original     		PDF MJW16212 225AA) MJE13003 BUH51 power transistors cross reference motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE

    TRANSISTOR MOTOROLA MAC 223

    Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
    Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),


    Original     		PDF

    NTE7232

    Abstract: NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A
    Text: NTE SEMICONDUCTORS ADDED SINCE MAY 2013 NTE PART NO. DESCRIPTION Datasheet Link NTE573-1 RECTIFIERS Schottky Barrier Rectifier, 100V, 5 Amp, DO‐201AD Case NTE573‐2 Schottky Barrier Rectifier, 200V, 5 Amp, DO‐201AD Case


    Original     		PDF NTE573â 201ADÂ com/specs/500to599/pdf/nte573â NTE639 214AAÂ NTE7232 NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A

    mosfet triggering circuit USING TL494

    Abstract: controller for PWM fan tl494 TIP35C TIP36C sub amplifier circuit diagram 74ls TTL family UC3842 variable voltage smps design with TL431 Buck converter with sg3526 UC3842 smps design with TL431 MC44608P40 equivalent TRANSISTOR MPS2112 MC3364D
    Text: SG388/D Rev. 3, May-2001 Master Components Selector Guide PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		PDF SG388/D May-2001 The422-3781 r14525 SG388/D mosfet triggering circuit USING TL494 controller for PWM fan tl494 TIP35C TIP36C sub amplifier circuit diagram 74ls TTL family UC3842 variable voltage smps design with TL431 Buck converter with sg3526 UC3842 smps design with TL431 MC44608P40 equivalent TRANSISTOR MPS2112 MC3364D

    tip122 tip127 audio amp schematic

    Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
    Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.


    Original     		PDF DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier

    nte 2343

    Abstract: No abstract text available
    Text: SILICON DARLINGTON TRANSISTORS IN ORDER OF NTE PART NUMBER NPN PNP Circuit Outline Description Letter Maximum Breakdown Voltage NTE Type Number Case Style Diag. Number Maximum Continuous Collector Current (Amps) Collector to Base (Volts) Collector to Emitter


    OCR Scan     		PDF OT-23 OT-89 nte 2343

    dg432

    Abstract: No abstract text available
    Text: BDT60;60A BDT60B;60C SbE T> PHILIPS INTERNATIONAL • 711002b 00432G4 bTl HIPHIN T- 33- ? SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications.


    OCR Scan     		PDF BDT60 BDT60B 711002b 00432G4 BDT61, BDT61A, BDT61B BDT61C. O-220. dg432

    Untitled

    Abstract: No abstract text available
    Text: J BD644F; 646F BD648F;650F BD652F V SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT 186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F. QUICK REFERENCE DATA


    OCR Scan     		PDF BD644F; BD648F BD652F BD643F, BD645F, BD647F, BD649F BD651F. BD644F OT186.

    B0648

    Abstract: B0648F 652f BD643F BD644F BD645F BD647F BD649F BD651F BD652F
    Text: BD644F; 646F B0648F; 650F BD652F SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington transistors in a SOT 186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F. QUICK REFERENCE DATA


    OCR Scan     		PDF BD644F; B0648F; BD652F BD643F, BD645F, BD647F, BD649F BD651F. BD644F B0648 B0648F 652f BD643F BD645F BD647F BD651F BD652F

    Untitled

    Abstract: No abstract text available
    Text: BD644F;646F BD648F; 650F BD652F PHILIPS INTERNATIONAL 5bE D 711005b 0042^54 bDb M P H I N T -33~ 3j SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F.


    OCR Scan     		PDF BD644F BD648F; BD652F 711005b OT186 BD643F, BD645F, BD647F, BD649F BD651F.

    652f

    Abstract: J578 BD644F BD647F BD652F BD643F LG tft circuit diagram BD645F BD648F BD649F
    Text: BD644F; 646F BD648F;650F BD652F J PHILIPS INTERNATIONAL 5bE » 711005b 0042^54 bOb M P H I N T-33-3J SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT186 envelope w ith an electrically insulated m ounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F.


    OCR Scan     		PDF BD644F; BD648F BD652F 711002b OT186 BD643F, BD645F, BD647F, BD649F BD651F. 652f J578 BD644F BD647F BD652F BD643F LG tft circuit diagram BD645F

    Untitled

    Abstract: No abstract text available
    Text: PNP Silicon Darlington Transistors • • • • BCV 28 BCV 48 For general AF applications High collector current High current gain Complementary types: BCV 29, BCV 49 NPN Type Marking Ordering code for versions in bulk Ordering code for versions on 12 mm-tape


    OCR Scan     		PDF BCV28 BCV48

    TRansistor 648

    Abstract: power factor PIC circuit transistor bd646 BD646 lco8a LCO 8A BD650 LE17 BD645 BD649
    Text: MAGNA Magna Park, Coventry Road, Lutterworth Leicestershire LE17 4JB, England Sales telephone: 01455 554711 Adm in telephone: 01455 552505 Fax: 01455 558843 FS » 2 3 » BD646; 648 BD650; 652 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m o n o lith ic D arlin gton c irc u it fo r audio o u tp u t stages and general


    OCR Scan     		PDF BD646; BD650; T0-220 BD645, BD647, BD649 BD651. BD646 Junc650; 7Z67332 TRansistor 648 power factor PIC circuit transistor bd646 lco8a LCO 8A BD650 LE17 BD645

    LC1 DT60

    Abstract: BDT60 BDT60B BDT61 BDT61A BDT61B BDT61C IEC134 z825
    Text: BDT60;60A BDT60B;60C PHILIPS INTERNA TIO NA L SbE D • TllOôEb O O l43EQ4 bTl « P H I N T- 33 - ? SILICON DARLINGTON POWER TRANSISTORS P-N-P s ilic o n po w e r transistors in m o n o lith ic D arlington c irc u it fo r a u d io o u tp u t stages and general


    OCR Scan     		PDF BDT60 BDT60B BDT61, BDT61A, BDT61B BDT61C. LC1 DT60 BDT61 BDT61A BDT61C IEC134 z825