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    TO220AB IGBT Search Results

    TO220AB IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TO220AB IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4410 SO-8

    Abstract: irf7389pbf IRF7343TRPBF IRG4PH30KPBF IRG4PC40FD IRFP4232PBF IRG4PC40UPBF IRG4PH50SPBF 247AA IRFR220NTRPBF
    Text: 1967-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 1967 25 Power MOSFETs and IGBTs RoHS N Channel, 150 Volt VDSS VGS V ID (A) Power (W) RDS(on) (Ω) RTH (JC) (°C/W) Gate Drive Package EACH 70016952 70016954 70017481 70017261 70017492 70017500 70017262 70017029


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    PDF IRF3315PBF IRF3415PBF IRF3415SPBF IRFB23N15DPBF IRFB41N15DPBF IRFB52N15DPBF IRFB61N15DPBF IRFL4315PBF IRFPS3815PBF IRFS52N15DPBF 4410 SO-8 irf7389pbf IRF7343TRPBF IRG4PH30KPBF IRG4PC40FD IRFP4232PBF IRG4PC40UPBF IRG4PH50SPBF 247AA IRFR220NTRPBF

    tc122 25

    Abstract: 1MBH75D-060S 1MBH65D-090A TC1278 1MBH50D060 TO-3PL 1MB15D-060 1MBH60D 1MBC05-060 1MBC10-060
    Text: パワーデバイス / Power Devices IGBT • IGBTモールドタイプ Molded Package Type IGBTs 600Vクラス 産業用モールドタイプ 600 volts class molded package types 形 式 Device type IGBT VCES VGES 1MBG05D-060 1MBC05-060 1MBC05D-060


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    PDF 1MBG05D-060 1MBC05-060 1MBC05D-060 1MBH05D-060 1MBG10D-060 1MBC10-060 1MBC10D-060 1MBH10D-060 1MBC15-060 1MB15D-060 tc122 25 1MBH75D-060S 1MBH65D-090A TC1278 1MBH50D060 TO-3PL 1MB15D-060 1MBH60D 1MBC05-060 1MBC10-060

    IRG4BC20UD

    Abstract: CPV362M4F irg4ph50ud GA400TD25S IRG4PC50 CPV362M4U
    Text: IGBTs www.irf.com V CES Collector-to-Emitter Voltage V Part Number Max. V CE(on) Collector-to-Emitter Voltage (V) IC Continuous Collector Current T C =25°C TC =25°C (A) (A) PD Max. Power Dissipation (W) Fax on Demand Number Case Outline Key Discrete High Efficiency WARP(tm) Speed


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    PDF 75-150kHz O-220AB IRG4BC20W IRG4BC30W IRG4BC40W O-247AC IRG4PC30W IRG4PC40W IRG4PC50W IRG4BC20UD CPV362M4F irg4ph50ud GA400TD25S IRG4PC50 CPV362M4U

    fmh*23N50E

    Abstract: FMH23N50E N-channel MOSFET to-247 fmv23n50e ic 2535 fmh23n50 FGW40N120HD FMV20N60S1 FMW30N60S1HF FMW20N60S1HF
    Text: 1959-2012:QuarkCatalogTempNew 9/11/12 9:05 AM Page 1959 25 Diodes, IGBTs and MOSFETs Features: ᭤ Low VF ᭤ Super High Speed Switching ᭤ High Reliability By Planer Design ø2.5 Application: ᭤ High Speed Switching ᭤ Ultra Small Package, Possible for


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    PDF ERA82-004 SC802-04 ERA81-004 ERB81-004 ERC81-004 SC802-06 ERA83-006 ERA85-009 ERA92-02 SC9202-2 fmh*23N50E FMH23N50E N-channel MOSFET to-247 fmv23n50e ic 2535 fmh23n50 FGW40N120HD FMV20N60S1 FMW30N60S1HF FMW20N60S1HF

    igbt 200v 20a

    Abstract: tc122 25 1MBH65D-090A igbt 200V 5A TC122 1MBH60D-090A TC122-25 1mbh ERW03-060 ERW04-060
    Text: パワーデバイス / Power Devices IGBT • IGBTモールドタイプ Molded Package Type IGBTs 電子レンジ用モールドタイプ Molded package types, such as microwave ovens 形 式 Device type 1MBH60D-090A 1MBH65D-090A VCES VGES Volts 900 900


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    PDF 1MBH60D-090A 1MBH65D-090A ERW01-060 ERW02-060 ERW03-060 ERW04-060 ERW05-060 ERW06-060 ERW07-120 O-220AB igbt 200v 20a tc122 25 1MBH65D-090A igbt 200V 5A TC122 1MBH60D-090A TC122-25 1mbh ERW03-060 ERW04-060

    TO247AD

    Abstract: TO-247ad SOT-227 Package TO247-AD Discrete IGBTS SG12N06DT SG23N06DT SG23N06T, SG23N06DT SG12N06DP SG12N06P
    Text: Isolated Gate Bipolar Transistors IGBTs Discrete IGBTs Äèñêðåòíûå IGBT Òype VCES V IC25 Electrical Characteristics IC90 VCEsat @TC=25°C @TC=25°C @25°C typ. EOFF @125°C typ. RthJC Ñõåìà Package Style A A V 7 1.5 0.6 2.30 1 TO-220AB mJ


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    PDF O-220AB SG7N06P SG7N06DP SG12N06P SG12N06DP SG12N06T O-247AD TO247AD TO-247ad SOT-227 Package TO247-AD Discrete IGBTS SG12N06DT SG23N06DT SG23N06T, SG23N06DT SG12N06DP SG12N06P

    IGBT DRIVER ignition coil automotive

    Abstract: mosfet to ignition coil HGT1S14N40G3VLS HUF76639 N-channel MOSFET to-247 50a TO-252 N-channel power MOSFET HGTP14N45G3VL ignition IGBTS 60V 60A TO-252 N-CHANNEL 60V 60A TO-252
    Text: 107730 Auto Line Card_PW 8/24/00 7:48 PM Page 1 www.intersil.com Automotive Discrete Power Products UltraFET MOSFETs and IGBTs enhance the peak performance of automotive systems in the 21st century Intersil is proud to continue introducing exciting new families of


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    PDF HUF75639P3, HUF75639S3S HUF75637P3, HUF75637S3S HUF75631P3 HUF75623P3 FN4477 FN4721 FN4720 FN4804 IGBT DRIVER ignition coil automotive mosfet to ignition coil HGT1S14N40G3VLS HUF76639 N-channel MOSFET to-247 50a TO-252 N-channel power MOSFET HGTP14N45G3VL ignition IGBTS 60V 60A TO-252 N-CHANNEL 60V 60A TO-252

    SGH80N60RUFD

    Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
    Text: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*)


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    PDF SGR2N60UFD SGP10N60RUF SGP10N60RUFD SGH10N60RUFD SGW10N60RUFD SGP06N60 SKB10N60 BUP400D SGB15N60 SGH80N60RUFD bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120

    HGTG30N60A4

    Abstract: HGTD3N60A4S HGTG20N60A4D HGT1Y30N120CN HGTG5N120BND HGT1S3N60A4S HGT1S3N60B3S HGTD3N60B3S HGTP5N120BND HGTD7N60A4S
    Text: IGBT Selection Guide TM 600V FAMILIES NOTE 1 IC RATED OR IC AT 110oC 3A TO-252AA (D-PAK) TO-220AB TO-263AB (D2-PAK) HGTD3N60A4S 2.7V 100ns HGTP3N60A4 2.7V 100ns HGT1S3N60A4S 2.7V 100ns HGTD3N60B3S 2.1V 175ns HGTP3N60B3 2.1V 175ns HGT1S3N60B3S 2.1V 175ns


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    PDF 110oC O-220AB O-263AB HGTD3N60A4S 100ns HGTP3N60A4 HGT1S3N60A4S HGTD3N60B3S HGTG30N60A4 HGTD3N60A4S HGTG20N60A4D HGT1Y30N120CN HGTG5N120BND HGT1S3N60A4S HGT1S3N60B3S HGTD3N60B3S HGTP5N120BND HGTD7N60A4S

    Untitled

    Abstract: No abstract text available
    Text: PD - 95445 IRG4BC20UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


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    PDF IRG4BC20UPbF O-220AB O-220AB O-220AB.

    ST IGBT code marking

    Abstract: TO-220AB transistor package 113 marking code transistor TO220AB IGBT NAT 3 transistor b 647 transistor
    Text: PD - 94938 IRG4BC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter


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    PDF IRG4BC30FDPbF O-220AB ST IGBT code marking TO-220AB transistor package 113 marking code transistor TO220AB IGBT NAT 3 transistor b 647 transistor

    ST IGBT code marking

    Abstract: irf 345 TO-220AB transistor package TRANSISTOR marking ar code
    Text: PD - 94938 IRG4BC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter


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    PDF IRG4BC30FDPbF O-220AB O-220AB. ST IGBT code marking irf 345 TO-220AB transistor package TRANSISTOR marking ar code

    Untitled

    Abstract: No abstract text available
    Text: PD - 97190A IRGB4062DPbF IRGP4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


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    PDF 7190A IRGB4062DPbF IRGP4062DPbF O-247AC

    irf 100v 200A

    Abstract: transistor IRF 610 IRF 840 equivalent transistor irf 840 diode Marking code WT
    Text: PD - 94909 IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


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    PDF IRG4BC20UDPbF O-220AB O-220AB. irf 100v 200A transistor IRF 610 IRF 840 equivalent transistor irf 840 diode Marking code WT

    IRGB4062D

    Abstract: IRGP4062D
    Text: PD - 97190 IRGB4062DPbF IRGP4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


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    PDF IRGB4062DPbF IRGP4062DPbF O-247AC IRGB4062D IRGP4062D

    Untitled

    Abstract: No abstract text available
    Text: PD - 95447 IRG4BC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


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    PDF IRG4BC40FPbF O-220AB O-220AB O-220AB.

    TO-220AB transistor package

    Abstract: No abstract text available
    Text: PD - 95639 IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


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    PDF IRG4BC20SPbF O-220AB O-220AB O-220AB. TO-220AB transistor package

    10a 400v bipolar transistor

    Abstract: C-150 IRGS10B60KD IRGSL10B60KD ultrafast diode 10a 400v diode 10a 400v
    Text: PD - 94925 IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


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    PDF IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD O-220AB O-220CTOR O-220AB. 10a 400v bipolar transistor C-150 IRGS10B60KD IRGSL10B60KD ultrafast diode 10a 400v diode 10a 400v

    Mosfet catalogue

    Abstract: mosfet 200A buk444 200B 220AB
    Text: Philips Semiconductors Concise Catalogue 1996 PowerMOS transistors including TOPFETs and IGBTs P O W E R S E M IC O N D U C T O R S POWERMOS TRANSISTORS INCLUDING TOPFETS ^D S ^ D S o n (V) (O) 100 100 0.9 1.1 200 200 200 200 200 200 200 200 200 200 200


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    PDF OT223 OT186 O-220AB OT404 Mosfet catalogue mosfet 200A buk444 200B 220AB

    1mbh

    Abstract: igbt 200v 30a
    Text: /\°7 —x / W 7s • 1G B T^-«M /K £ < 7 S i U > v ffl i / Power Devices M olded Package Type IGBTs ; 1/K -f 7° / * ¥ H IS]11^ ffl i ^ K ^ < 7° Molded package types, such as microwave ovens / Horizontal deflection circuit V géS fc PC rt,>r-y Volts Volte


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    PDF 1MBH60D-090A 1MBH65D-090A O-220AB 1mbh igbt 200v 30a

    SOT-263

    Abstract: power mosfet catalogue
    Text: Philips Semiconductors Concise Catalogue 1996 POWER SEMICONDUCTORS PowerMOS transistors including TOPFETs and IGBTs POWERMOS TRANSISTORS INCLUDING TOPFETS ^DS V ^DS(on) (Q ) O lD (A) PD package (W) type number technology (A) 'd 50 50 50 50 50 50 50 60 60


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    PDF OT263 T0-220AB O-220AB SOT-263 power mosfet catalogue

    power mosfet catalogue

    Abstract: mosfet catalogue BUK551-100A BUK445-100A 100a mosfet SOT404
    Text: Philips Semiconductors Concise Catalogue 1996 PowerMOS transistors including TOPFETs and IGBTs POWER SEMICONDUCTORS POWERMOS TRANSISTORS INCLUDING TOPFETS V DS R DS on b (V) (O) (A) 'd (A) PD (W) 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 0.1 0.1 0.1


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    PDF OT223 O-220AB OT404 T0-220AB OT186 power mosfet catalogue mosfet catalogue BUK551-100A BUK445-100A 100a mosfet SOT404

    IRGB430UD2

    Abstract: IRGTI140U06 CPV362MU IRGPC50U
    Text: Illl E S S I n t e r n a t i o n a l R e c t if i e r Insulated Gate Bipolar Transistors VCES Colector to Emitter Voltage Volts PMt Number M«*VcE(on) Colector to Emitter Voltage (Volts) IGBTs ICContinuous Colector Current Tc=25‘ C Tc=100*C (Amps) (Amps)


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    PDF 30kHz) O-220AB O-247AC IRGB420UD2 IRGB430UD2 IRGP430UD2 IRGP440UD2 IRGP450UD2 IRGTI140U06 CPV362MU IRGPC50U

    220AB

    Abstract: No abstract text available
    Text: Concise Catalogue 1996 Philips Semiconductors POWER SEMICONDUCTORS PowerMOS transistors including TOPFETs and IGBTs V CEsat C t. (A (ms ) type number package (V) Po (W) technology (V) 400 450 500 800 800 2.2 1.8 2.0 3.5 3.5 15 15 15 12 24 10 8 6 0.4 0.4


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    PDF BUK856-400IZ BUK856-450IX BUK854-500IS BUK854-800A BUK856-800A O-220AB TQ-220AB 54-800A 220AB