tc143e
Abstract: 25E5 tube FDB2552 m062 MOTOR tc2-16 marking m062
Text: FDB2552 / FDP2552 N-Channel PowerTrench MOSFET 150 V, 37 A, 36 mΩ Features Applications • RDS on = 32 mΩ ( Typ.) @ VGS = 10 V, ID = 16 A • Consumer Appliances • QG(tot) = 39 nC ( Typ.) @ V GS = 10 V • Synchronous Rectification • Low Miller Charge
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FDB2552
FDP2552
FDP2552
O-263)
O-220
tc143e
25E5 tube
m062 MOTOR
tc2-16
marking m062
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solar charge circuit max 856
Abstract: FDB035N10A
Text: FDB035N10A N-Channel PowerTrench MOSFET 100 V, 214 A, 3.5 mΩ Features Description • RDS on = 3.0 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
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FDB035N10A
FDB035N10A
solar charge circuit max 856
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TO254P1524X482-3N
Abstract: No abstract text available
Text: FDB035N10A N-Channel PowerTrench MOSFET 100V, 214A, 3.5mΩ Features Description • RDS on = 3.0mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDB035N10A
FDB035N10A
TO254P1524X482-3N
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FDB86135
Abstract: No abstract text available
Text: FDB86135 tm N-Channel PowerTrench MOSFET 100V, 176A, 3.5mΩ Features General Description • Max RDS on = 3.5mΩ at VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDB86135
FDB86135
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FDP16AN08A0
Abstract: RG331
Text: FDP16AN08A0 / FDB16AN08A0 N-Channel PowerTrench MOSFET 75 V, 58 A, 16 m Ω Features Applications • RDS on = 13 mΩ ( Typ.) @ VGS = 10 V, ID = 58 A • Synchronous Rectification for ATX / Server / Telecom PSU • QG(tot) = 28 nC ( Typ.) @ V GS = 10 V • Battery Protection Circuit
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FDP16AN08A0
FDB16AN08A0
FDB16AN08A0
O-220
O-263)
RG331
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Untitled
Abstract: No abstract text available
Text: FDB150N10 N-Channel PowerTrench MOSFET 100 V, 57 A, 15 mΩ Features General Description • RDS on = 12 mΩ ( Typ.) @ VGS = 10 V, ID = 49 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored
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FDB150N10
FDB150N10
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FDB035AN06A0
Abstract: NL104
Text: FDB035AN06A0 N-Channel PowerTrench MOSFET 60 V, 80 A, 3.5 m Ω Features Applications • RDS on = 3.2 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • QG(tot) = 95 nC ( Typ.) @ V GS = 10 V • Battery Protection Circuit
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FDB035AN06A0
FDB035AN06A0
O-263)
153oC,
NL104
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Untitled
Abstract: No abstract text available
Text: FDB86135 N-Channel Shielded Gate PowerTrench MOSFET 100V, 176A, 3.5mΩ Features General Description • Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been
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FDB86135
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Untitled
Abstract: No abstract text available
Text: FDB86135 N-Channel PowerTrench MOSFET tm 100V, 176A, 3.5mΩ Features General Description • Max RDS on = 3.5mΩ at VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been
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FDB86135
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Untitled
Abstract: No abstract text available
Text: FDB035N10A N-Channel PowerTrench MOSFET 100V, 176A, 3.5mW Features Description • RDS on = 3.0mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDB035N10A
FDB035N10A
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R860P2
Abstract: TA49409 TO254P1524X482 ISL9R860P2 ISL9R860S2 ISL9R860S3S ISL9R860S3ST TB334 R860P
Text: ISL9R860P2, ISL9R860S3ST 8A, 600V Stealth Diode General Description Features The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9R860P2,
ISL9R860S3ST
ISL9R860S2
ISL9R860S3S
R860P2
TA49409
TO254P1524X482
ISL9R860P2
ISL9R860S3ST
TB334
R860P
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FDP2532 Mosfet
Abstract: FDP2532 FDB2532 FDB2532/FDP2532/FDI2532
Text: FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench MOSFET 150 V, 79 A, 16 mΩ Features Applications • RDS on = 14 mΩ ( Typ.) @ VGS = 10 V, ID = 33 A • Consumer Appliances • QG(tot) = 82 nC ( Typ.) @ V GS = 10 V • Synchronous Rectification • Low Miller Charge
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FDB2532
FDP2532
FDI2532
FDI2532
O-263)
O-220
O-262)
FDP2532 Mosfet
FDB2532/FDP2532/FDI2532
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Untitled
Abstract: No abstract text available
Text: ISL9R860P2, ISL9R860S3ST 8A, 600V Stealth Diode General Description Features The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9R860P2,
ISL9R860S3ST
ISL9R860S2
ISL9R860S3S
175oC
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dual diode marking A3
Abstract: No abstract text available
Text: FDB035N10A tm N-Channel PowerTrench MOSFET 100V, 214A, 3.5mΩ Features Description • RDS on = 3.0mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDB035N10A
FDB035N10A
dual diode marking A3
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FDP3682
Abstract: kp32 tube
Text: FDB3682 / FDP3682 N-Channel PowerTrench MOSFET 100 V, 32 A, 36 mΩ Features Applications • RDS on = 32 mΩ ( Typ.) @ VGS = 10 V, ID = 32 A • Consumer Appliances • QG(tot) = 18.5 nC( Typ.) @ V GS = 10 V • Synchronous Rectification • Low Miller Charge
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FDB3682
FDP3682
FDP3682
O-263)
O-220
kp32 tube
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r860p2
Abstract: TO254P1524X482-3N TO254P1524X482 MOSFET 3N 200 R860S3S ISL9R860P2
Text: ISL9R860P2, ISL9R860S3ST Features • Stealth Recovery trr = 28 ns @ IF = 8 A • Max Forward Voltage, VF = 2.4 V (@ TC = 25°C) • 600 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant Applications • Switch Mode Power Supplies
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ISL9R860P2,
ISL9R860S3ST
ISL9R860S3ST
O-263,
O254P1524X482-3N
O263A02REV6
r860p2
TO254P1524X482-3N
TO254P1524X482
MOSFET 3N 200
R860S3S
ISL9R860P2
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