BGT24MTR11
Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF799
BF799W
BFP181
BFP182
BFP182R
BFP182W
BGT24MTR11
AZ1045-04F
BAR86-02LRH
24GHz Radar
BGA628L7
SMV1705
BFR181W
ALPHA&OMEGA DATE CODE
marking code onsemi Diode
2SC4586
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Untitled
Abstract: No abstract text available
Text: TJ15S10M3 MOSFETs Silicon P-Channel MOS U-MOS TJ15S10M3 1. Applications • Automotive • Switching Voltage Regulators • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V)
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TJ15S10M3
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Untitled
Abstract: No abstract text available
Text: TJ15S10M3 MOSFETs Silicon P-Channel MOS U-MOS TJ15S10M3 1. Applications • Automotive • Switching Voltage Regulators • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V)
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TJ15S10M3
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Untitled
Abstract: No abstract text available
Text: TJ15S10M3 MOSFETs Silicon P-Channel MOS U-MOS TJ15S10M3 1. Applications • Automotive • Switching Voltage Regulators • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V)
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TJ15S10M3
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zener diode 1NU 9F
Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
Text: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:
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BCE0001A
BCE0001B
zener diode 1NU 9F
diode 1NU
DLA DIODE TOSHIBA
diode 1NU 7.1
NH5 Diode
Schottky diode TO220 15A 1000V
diode 1NU 5.1
diode 1NU 6F
10lc48
GU 1R5
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TK12A50D
Abstract: TK12A50D5
Text: TK12A50D5 MOSFETs Silicon N-Channel MOS π-MOS TK12A50D5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trrf = 50 ns (typ.), trr = 120 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.5 Ω (typ.)
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TK12A50D5
O-220SIS
TK12A50D
TK12A50D5
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TK10A60D5
Abstract: TK10A60D
Text: TK10A60D5 MOSFETs Silicon N-Channel MOS π-MOS TK10A60D5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trrf = 50 ns (typ.), trr = 90 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.8 Ω (typ.)
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TK10A60D5
O-220SIS
TK10A60D5
TK10A60D
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Untitled
Abstract: No abstract text available
Text: 1DL42A TOSHIBA High Efficiency Rectifier HED Silicon Epitaxial Junction Type 1DL42A Switching Mode Power Supply Applications • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 200 V · Average Forward Current: IF (AV) = 1.0 A · Very Fast Reverse-Recovery Time: trr = 35 ns (max)
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1DL42A
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TOSHIBA DLA
Abstract: TOSHIBA RECTIFIER
Text: 1DL41A TOSHIBA High Efficiency Rectifier HED Silicon Epitaxial Junction Type 1DL41A Switching Mode Power Supply Applications • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 200 V · Average Forward Current: IF (AV) = 1.0 A (Ta = 64°C) · Very Fast Reverse-Recovery Time: trr = 35 ns (max)
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1DL41A
TOSHIBA DLA
TOSHIBA RECTIFIER
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Untitled
Abstract: No abstract text available
Text: 1DL42A TOSHIBA High Efficiency Rectifier HED Silicon Epitaxial Junction Type 1DL42A Switching Mode Power Supply Applications • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 200 V • Average Forward Current: IF (AV) = 1.0 A • Very Fast Reverse-Recovery Time: trr = 35 ns (max)
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1DL42A
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2SJ439
Abstract: No abstract text available
Text: 2SJ439 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π−MOSV 2SJ439 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 2.5 V gate drive Low drain−source ON resistance : RDS (ON) = 0.18 Ω (typ.) High forward transfer admittance
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2SJ439
2SJ439
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U1DL44A
Abstract: No abstract text available
Text: U1DL44A TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE U1DL44A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS Repetitive Peak Reverse Voltage : VRRM = 200 V Average Forward Current Very Fast Reverse-Recovery Time : IF (AV) = 1.0 A
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U1DL44A
150oducts
U1DL44A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2202F 1.9G H z BAND ATTENUATO R PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22dB (Typ.) • CONTROL VOLTAGE : 0 V /3 V PIN CONNECTION (TOP VIEW) VC2 OUT MARKING
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TG2202F
961001EBC1
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1s1588
Abstract: Diode 1S1588 1S1587 1S1536 1s85
Text: TOSHIBA -CDISCRETE/0PT03- 9097250 TOSHIBA ~ b7 Dlf| ^ 7 2 5 0 DISCRETE/OPTO _ 67C_09299_. 1S1585—1S1588 Silicon Epitaxial' Planar Type Diode ULTRA HIGH SPEED SWITCHING APPLICATIONS. FEATURES: Low Forward Voltage : Vf =1.0V (Max.) . Small Total Capacitance : Cx=2pF (Max.)
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-CDISCRETE/0PT03-
1S1585--1S1588
1S1585
1S1536
1S1587
1S1588
Diode 1S1588
1s85
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Untitled
Abstract: No abstract text available
Text: 1SV313 T O SH IB A TOSHIBA DIODE VCO FOR UHF BAND RADIO • • SILICON EPITAXIAL PLANAR TYPE 1 SV3 1 3 High Capacitance Ratio : C0.5V /C 2.5V = 2-5 TyP- : rs = 0.35 CI (Typ.) Low Series Resistance Useful for Small Size Tuner IV/I A V I l\ /I I IIV /I Dl \ A A“\ I TI II MM \ J« J
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1SV313
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 1DL42 TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE 1 DL42 SWITCHING TYPE POWER SUPPLY APPLICATIONS Vr rm = 200V Repetitive Peak Reverse Voltage Average Forward Current i F(AV) = 1-Oa Very Fast Reverse-Reeovery Time trr = 60ns (Max.)
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1DL42
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1DL42A TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE 1 DL42A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS Repetitive Peak Reverse Voltage : V rrm = 200V Average Forward Current : Ijr (AV) = 1-0A Very Fast Reverse-Recovery Time : trr = 35ns (Max.)
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1DL42A
DL42A
961001EAA2'
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A98V
Abstract: 1DL42A
Text: TOSHIBA 1DL42A TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE 1 DL42A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS Repetitive Peak Reverse Voltage : Vrrm = 200V Average Forward Current : Ijr (AV)= 1-0A Very Fast Reverse-Reeovery Time : trr = 35ns (Max.)
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1DL42A
961001EAA2'
A98V
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1DL41A
Abstract: TOSHIBA DLA
Text: TOSHIBA 1DL41A TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE 1 DL41A Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATIONS Repetitive Peak Reverse Voltage V r r m = 2 0 0 V Average Forward Current IF(AV) = 1-0A (Ta = 64°C) Very Fast Reverse-Reeovery Time trr = 35ns (Max.)
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1DL41A
961001EAA2'
TOSHIBA DLA
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1DL41A TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE 1 DL41A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS Repetitive Peak Reverse Voltage : V r r m = 200V Average Forward Current : Ip (AV)= 1-0A (Ta = 64°C) Very Fast Reverse-Recovery Time : trr = 35ns (Max.)
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1DL41A
DL41A
961001EAA2'
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DL42A
Abstract: No abstract text available
Text: 1D L 42A TOSHIBA TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE 1 DL42A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS Repetitive Peak Reverse Voltage : V r r m = 200 V Average Forward Current : If (AV) = 1.0A Very Fast Reverse-Reeovery Time : trr = 35 ns (Max.)
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DL42A
DL42A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 5TUZ47 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE R T II 7 dl Unit in mm MOST SUITABLE FOR COLOR T.V. DAMPER. • • • Repetitive Peak ReverseVoltage : V r r ]V[ = 1500V Average Forward Current : Ijr AV = 5A Reverse-Recovery Time : ^ = 0 .6 ^ 8 •
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5TUZ47
961001EAA2'
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L44A
Abstract: marking L4 toshiba L4 toshiba marking code toshiba
Text: TOSHIBA U1DL44A TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE U 1 D L4 4 A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS = 200V Repetitive Peak Reverse Voltage V Average Forward Current I f (AV) = 1'° a Very Fast Reverse-Recovery Time
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U1DL44A
961001EAA2'
L44A
marking L4 toshiba
L4 toshiba
marking code toshiba
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1SV269
Abstract: C25V
Text: TOSHIBA 1SV269 TOSHIBA VARIABLE CAPACITANCE DIODE 1 S V2 6 9 CATV TUNING • • • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C2V/C25V = 11.5 Typ. Low Series Resistance : rs = 0.550 (Typ.) Excellent C-V Characteristics, and Small Tracking Error.
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1SV269
C2V/C25V
000707EAA2'
1SV269
C25V
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