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    TP12N Search Results

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    TP12N Price and Stock

    Rochester Electronics LLC HGTP12N60A4D

    INSULATED GATE BIPOLAR TRANSISTO
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    DigiKey HGTP12N60A4D Bulk 67,276 165
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    STMicroelectronics STP12NK80Z

    MOSFET N-CH 800V 10.5A TO220AB
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    DigiKey STP12NK80Z Tube 2,626 1
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    Avnet Americas STP12NK80Z Tube 13 Weeks 1,000
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    Mouser Electronics STP12NK80Z 1,277
    • 1 $3.8
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    Newark STP12NK80Z Bulk 1
    • 1 $3.9
    • 10 $3.27
    • 100 $2.64
    • 1000 $2.16
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    STMicroelectronics STP12NK80Z 1,277 1
    • 1 $3.72
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    TME STP12NK80Z 89 1
    • 1 $3.47
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    Avnet Silica STP12NK80Z 100 14 Weeks 50
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    Win Source Electronics STP12NK80Z 4,000
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    Rochester Electronics LLC HGTP12N60C3R

    IGBT 600V 24A TO220-3
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    DigiKey HGTP12N60C3R Bulk 2,400 239
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    STMicroelectronics STP12NK30Z

    MOSFET N-CH 300V 9A TO220AB
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    DigiKey STP12NK30Z Tube 1,490 1
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    Avnet Americas STP12NK30Z Tube 13 Weeks 1,000
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    Mouser Electronics STP12NK30Z 1,497
    • 1 $2.57
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    Newark STP12NK30Z Bulk 1
    • 1 $2.5
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    • 100 $1.65
    • 1000 $1.19
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    STMicroelectronics STP12NK30Z 1,497 1
    • 1 $2.52
    • 10 $1.28
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    TME STP12NK30Z 119 1
    • 1 $2.35
    • 10 $0.93
    • 100 $0.85
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    Avnet Silica STP12NK30Z 300 14 Weeks 50
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    EBV Elektronik STP12NK30Z 14 Weeks 50
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    Rochester Electronics LLC HGTP12N60A4

    UFS SERIES N-CH IGBT
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    DigiKey HGTP12N60A4 Tube 900 417
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    TP12N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TER22

    Abstract: No abstract text available
    Text: KOA SPEER ELECTRONICS, INC. SS-222 R7 AHA 1/12/04 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency


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    PDF SS-222 TER22

    tdr22

    Abstract: No abstract text available
    Text: KOA SPEER ELECTRONICS, INC. SS-222 R5 AHA 6/30/03 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency


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    PDF SS-222 tdr22

    TDR15

    Abstract: TD18N TD68N TP82N TP68N
    Text: MHL multilayer ceramic inductor features inductors • Monolithic structure provides high reliability in a wide temperature and humidity range • High quality ceramic material and unique manufacturing process provides high Q at high frequency • Standard EIA packages: 1E, 1J, 2A


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: KL73 thin film inductor features • • • • • Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1E, 1J, 2A, 2B • Marking: Yellow three-figure on blue protective coating


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    PDF MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: KOA SPEER ELECTRONICS, INC. SS-203 R4 AHA 02/05/04 Thin Film Chip Inductors Type KL73 0402 CERTIFIED 1. Scope This specification applies to Thin Film Chip Inductors KL73 1E size produced by KOA Corporation. 2. Type Designation The type designation shall be the following form:


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    PDF SS-203

    KL731H

    Abstract: TP33N KL731E
    Text: KL73 thin film inductor features Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1H, 1E, 1J, 2A, 2B • Marking: Yellow three-figure on blue protective coating


    Original
    PDF MIL-STD-202, KL731H TP33N KL731E

    Untitled

    Abstract: No abstract text available
    Text: KOA SPEER ELECTRONICS, INC. SS-222 R9 AHA 2/09/05 Multilayer Ceramic Inductors Type MHL CERTIFIED CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency


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    PDF SS-222 Dimensions039

    Untitled

    Abstract: No abstract text available
    Text: • ■A AP PP PLLIIC CA ATTIIO ON N Low profile, high current power supplies Battery powered devices DC/DC converters in distributed power systems DC/DC converters for field programmable gate array ■ ■ FFE EA ATTU UR RE ES S RoHS Compliant. Super low resistance ,ultra high current rating


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    PDF TP12N MLV-TP12NSERIES-O1

    mlvtp12n2r2

    Abstract: MLV-TP12N2R2N-O1 MLV-TP12N1R5N-O1 MLV-TP12
    Text: • PP ICATION ■A AP PLLICATION Low profile , high current power supplies Battery powered devices DC/DC converters in distributed power systems DC/DC converters for field programmable gate array ■ EATURES ■ FFEATURES RoHS Compliant. Super low resistance ,ultra high current rating


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    PDF TP12N MLV-TP12NSERIES-O1 MLV-TP12NSERIES-O1 MLV-TP12N1R5N-O1 MLV-TP12N2R2N-O1 mlvtp12n2r2 MLV-TP12N2R2N-O1 MLV-TP12N1R5N-O1 MLV-TP12

    Untitled

    Abstract: No abstract text available
    Text: KL73 thin film inductor features • • • • • Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1H, 1E, 1J, 2A, 2B


    Original
    PDF MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: KOA SPEER ELECTRONICS, INC. SS-222 R6 AHA 9/29/03 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency


    Original
    PDF SS-222

    Untitled

    Abstract: No abstract text available
    Text: KL73 thin film inductor features • • • • • Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1H, 1E, 1J, 2A, 2B


    Original
    PDF MIL-STD-202,

    ltg 551

    Abstract: 221A-04 MTM12N05 MTP12N05 MTP12N06 X48V
    Text: MOTOROLA SC XSTRS/R F 1 4 E- D I b3b7ES4 a O TG O MT 3 I - r - 3 9 - / 1 MOTOROLA m SEM IC O N D U C TO R TECHNICAL DATA M TM 12N05 M TP12N 05 MTP12IM06 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N -Channel Enhancem ent-M ode S ilic o n G ate TM O S


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    PDF MTM12N05 MTP12N05 MTP12IU06 O-204AA 21A-04 O-220AB QM20EÂ ltg 551 221A-04 MTP12N06 X48V

    12N05

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M TM 12N 05 M TP12N 05 M TP12N 06 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS T M O S P O W E R FETs 12 A M P E R E S T he se T M O S P o w e r F E T s are d e sig n e d for lo w voltage, high


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    PDF TP12N O-204AA 21A-04 T0220AB 12N05

    schematic diagram UPS

    Abstract: STP12NR20 STP12NR20FI
    Text: SGS-THOMSON [MOigœilLiera *® TP12NR20 TP12NR20FI N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE TP12NR20 S TP12N R20FI • . . . . V dss R d S o ii Id 200 V 200 V < 0 .3 Q. < 0 .3 il 12 A 7 A TYPICAL RDS(on) = 0.23 £1


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    PDF STP12NR20 STP12NR20FI STP12NR20 STP12NR20FI Voltage15 P011C STP12NR20-STP12NR20FI ISOWATT220 schematic diagram UPS

    TP12N

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TP12N10E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP12N10E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d T M O S E -F E T is d e s ig n e d to w ith s ta n d high


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    PDF TP12N10E/D TP12N10E 21A-06 O-220AB MTP12N10E/D TP12N

    MTP8N10

    Abstract: mtp7n06 mtp12n10 MTP7N15 power mosfets to 204aa MTP5N15 mtp25n10 MTP12P08 MTP3N15 MTH8P20
    Text: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 M TM 2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 2 04AA M TP2P50 220AB M TM 2P45 204AA 220A8 M T P 2P45 200 0.7 4 M TM 8P20 1


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    PDF O-218 O-22QAB MTM2P50 204AA MTP2P50 220AB MTM2P45 MTP2P45 MTP8N10 mtp7n06 mtp12n10 MTP7N15 power mosfets to 204aa MTP5N15 mtp25n10 MTP12P08 MTP3N15 MTH8P20

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    G12N60b3

    Abstract: G12N60B HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D LD26 TB334 G12N60 Bipolar HJ
    Text: in t e TP12N60B3, HGT1S12N60B3S r r ii J a n u a ry . m Data Sheet 27A, 600V, UFS Series N-Channel IGBTs The TP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


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    PDF HGTP12N60B3, HGT1S12N60B3S HGTP12N60B3 HGT1S12N60B3S TA49171ration G12N60b3 G12N60B HGT1S12N60B3S9A HGTP12N60B3D LD26 TB334 G12N60 Bipolar HJ

    AN918 MOTOROLA

    Abstract: AN918 Paralleling Power MOSFETs in Switching Applications MTP12N10 2N10E AN-918 MTP8N18 AN918 AN-918 Paralleling Power MOSFETs in Switching Applications Nippon capacitors Motorola AN918
    Text: ^ AN-918 M O TO R O LA Semiconductor Products Inc. Application Note PARALLELING POWER MOSFETs IN SWITCHING APPLICATIONS by Kim Gauen This article updates and supplements the present TDT series of Motorola Applications Notes w ith a more detailed analysis end design guide for TMOS power MOSFET parallel


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    PDF AN-918 AN918 MOTOROLA AN918 Paralleling Power MOSFETs in Switching Applications MTP12N10 2N10E AN-918 MTP8N18 AN918 AN-918 Paralleling Power MOSFETs in Switching Applications Nippon capacitors Motorola AN918

    irf630

    Abstract: IRF230 12N20 f630 IRF630-633 IRF231 IRF631 IRF632 IRF633 MTP12N18
    Text: FAIRCHILD S E M I C O ND UC TO R_ I FAIRCHILD 34^7.4 005787'! „ TP12N18/12N20 T N-Channe! Power MOSFETs, 12 A, 150-200 V A Schlumberger Company Power And Discrete Division Description rO-204AA TO-220AB RF230 RF231 RF232 RF233 IRF630 IRF631


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    PDF IRF230-233/IRF630-633 MTP12N18/12N20 TQ-204AA O-220AB IRF630 IRF631 IRF632 IRF633 MTP12N18 MTP12N20 irf630 IRF230 12N20 f630 IRF630-633 IRF231 IRF631 IRF632 IRF633 MTP12N18

    TP8N10

    Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI


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    PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40

    MTP12N20

    Abstract: Transistor 3-354 AN569
    Text: MOTOROLA SC XSTRS/R bf l E F b3b?2S4 » GCHf l V1!? W MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP12N20 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES RDS<on) = 0.35 OHM 200 VOLTS This TM O S Power FET is designed for medium voltage, high


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    PDF MTP12N20 MTP12N20 Transistor 3-354 AN569

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


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