BF495
Abstract: BF495 transistor
Text: _ BF495 N AMER PHILIPS/DISCRETE . DbE D ^ =53=131 001H3QS D ' r-2/-/7 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 variant intended for h.f. applications in radio and television receivers; it is especially recommended for f.m. tuners, i.f. amplifiers in a.m./f.m. receivers where a low transistor
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BF495
001H3QS
emi2312
53T31
DD13313
bbS3T31
7Z62763
7Z08226
BF495
BF495 transistor
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BLY88C
Abstract: No abstract text available
Text: ^53*131 0 0 2 = ^ 2 SO? • APX BLY88U/01 b'lE » N AMER PHILIPS/DISCRETE J V V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is
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BLY88U/01
BLY88C
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transistor 131 8D
Abstract: transistor k 3728 QBE+61.2+dp2
Text: N AMER PHILIPS/DISCRETE 86D OLE D T' 01928 ^53=131 DDimbt. 5 BLY90 A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran
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BLY90
transistor 131 8D
transistor k 3728
QBE+61.2+dp2
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Untitled
Abstract: No abstract text available
Text: I N AUER PHILIPS/DISCRETE bb53*131 □ 02*1732 T13 BLY92C b*!E D IAPX A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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BLY92C
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Untitled
Abstract: No abstract text available
Text: OLE D N AUER PHILIPS/DISCRETE 86D 01878 D r - ^^53=131 DD1411L t> jt 1 BLY87A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile and m ilitary transmitters with a supply voltage o f 13,5 V . The transistor is resistance stabilized and is guaranteed to
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DD1411L
BLY87A
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advantage and disadvantage of igbt
Abstract: HFBR1531Z HFBR-1522ETZ
Text: Galvanic isolation for IGBT-Driver White Paper By Michael Wappmannsberger Usually, an IGBT Insulated Gate Bipolar Transistor is described in the following way: "An IGBT is a combination of a field effect transistor and a bipolar transistor where an N-channel FET controls a bipolar transistor". Although this sentence
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AFBR-0546Z
AFBR-0548Z
HFBR-0543Z
AV02-3407EN
AFBR-1624Z/1629Z
AFBR-2624Z/2529Z
AV02-2699EN
HFBR-0500ETZ
IEC60664-1
AV02-3500EN
advantage and disadvantage of igbt
HFBR1531Z
HFBR-1522ETZ
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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TRANSISTOR SMD CODE B7
Abstract: TRANSISTOR SMD MARKING CODE B7 transistor smd marking JT smd transistor kn transistor p2a smd TRANSISTOR code b7 MARKING CODE SMD IC smd transistor marking PA K TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE
Text: m ^53=131 DDESÖbb blfl • APX N AHER PHILIPS/DISCRETE b?E T> PMBT3906 -/ V_ SILICON EPITAXIAL TRANSISTOR P-N-P transistor in a m icrom iniature SMD plastic envelope intended fo r surface mounted applications.
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PMBT3906
PMBT3906
TRANSISTOR SMD CODE B7
TRANSISTOR SMD MARKING CODE B7
transistor smd marking JT
smd transistor kn
transistor p2a
smd TRANSISTOR code b7
MARKING CODE SMD IC
smd transistor marking PA
K TRANSISTOR SMD MARKING CODE
TRANSISTOR SMD MARKING CODE
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BUK657-500B
Abstract: T0220AB transistor D 587
Text: N AMER PHILIPS/DISCRETE hTE D • ^53*131 00308^0 ESI « A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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BUK657-500B
T0220AB
transistor D 587
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NEC IC D 553 C
Abstract: nec 2741 702 mini transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.
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2SC4226
2SC4226
SC-70
2SG4226-T1
NEC IC D 553 C
nec 2741
702 mini transistor
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BUK637-400A
Abstract: BUK637-400B P02S
Text: N AMER PHILIPS/DISCRETE E SE D ^53=131 □020b7D 2 PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable
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BUK637-400A
BUK637-400B
BUK637
-400A
-400B
BUK637-400B
P02S
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NEC 2403
Abstract: 3181 R33 2SC4227 2SC4227-T1 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
Text: DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
2SC4227-T1
NEC 2403
3181 R33
2SC4227-T2
of transistor C 4908
TC-2403
0 811 404 614
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NEC 2905
Abstract: NEC 1357 2SC4228 2SC4228-T1 2SC4228-T2 transistor 936 sc 789 transistor 1357 transistor NEC
Text: DATA SHEET SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4228 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
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2SC4228
2SC4228
NEC 2905
NEC 1357
2SC4228-T1
2SC4228-T2
transistor 936
sc 789 transistor
1357 transistor NEC
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369D
Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic
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BUD42D
BUD42D
BUD42D/D
369D
BUD42DT4
MPF930
MTP8P10
MUR105
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TRANSISTOR blw97
Abstract: MGP705 4312 020 36640 BLW97 transistor d1 391 MLA876 SOT121B 101 Ceramic Disc Capacitors
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW97 HF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor designed for use in class-A,
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BLW97
SC08a
TRANSISTOR blw97
MGP705
4312 020 36640
BLW97
transistor d1 391
MLA876
SOT121B
101 Ceramic Disc Capacitors
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nec 2741
Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.
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2SC4226
2SC4226
SC-70
2SC4226-T1
nec 2741
2SC4226 datasheet
2SC4226-T1
2SC4226-T2
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MDA380
Abstract: 4312 020 36642 MDA385 BLU99 TRANSISTOR SL 100 "2222 352"
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU99 BLU99/SL UHF power transistor Product specification March 1993 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in
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BLU99
BLU99/SL
BLU99
OT122A)
BLU99/SL
MDA380
4312 020 36642
MDA385
TRANSISTOR SL 100
"2222 352"
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transistor NEC D 587
Abstract: 3181 R33 transistor c 3181
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
2SC4227-T1
transistor NEC D 587
3181 R33
transistor c 3181
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nec 2561
Abstract: NEC 2561 transistor 2561 nec 2561 a nec NEC semiconductor 2561 transistor NEC 2561 P1093 100MHZ 200MHZ 2SC3356
Text: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SC5337 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to
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2SC5337
2SC5337
2SC3356
nec 2561
NEC 2561 transistor
2561 nec
2561 a nec
NEC semiconductor 2561
transistor NEC 2561
P1093
100MHZ
200MHZ
2SC3356
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pir 500b
Abstract: No abstract text available
Text: N AtlER PHILIPS/DISCRETE E5E D • fafa53*131 Q020b6Q 5 PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.
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Q020b6Q
BUK637-500A
BUK637-500B
BUK637-500C
31-is*
BUK637
bb53T31
0020bfl4
pir 500b
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2SC4225
Abstract: 9015 transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4225 is an NPN silicon epitaxial transistor designed for low in millimeters noise amplifier at VHF through UHF band.
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2SC4225
2SC4225
9015 transistor
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2SC3356
Abstract: IC nec 555 transistor 1431 T marking 544 low noise amplifier
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
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2SC3356
2SC3356
IC nec 555
transistor 1431 T
marking 544 low noise amplifier
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2SA1424
Abstract: NEC 2532 276-137 2SA1978 2SC2351 NPN transistor mhz s-parameter 2sc2351 equivalent
Text: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES High fT _0.2 2.8+ Equivalent NPN transistor is the 2SC2351. • Alternative of the 2SA1424. _0.2 2.9+ Symbol Rating Unit Collector to Base Voltage
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2SA1978
2SC2351.
2SA1424.
2SA1424
NEC 2532
276-137
2SA1978
2SC2351
NPN transistor mhz s-parameter
2sc2351 equivalent
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4312 020 36640
Abstract: SOT121B SOT121 BLW97 PHILIPS 4312 amplifier TRANSISTOR blw97 3 pin TRIMMER capacitor 3 pin trimmer capacitors
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW97 HF power transistor Product specification August 1986 Philips Semiconductors Product specification HF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor designed for use in class-A, AB and B operated high-power
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BLW97
4312 020 36640
SOT121B
SOT121
BLW97
PHILIPS 4312 amplifier
TRANSISTOR blw97
3 pin TRIMMER capacitor
3 pin trimmer capacitors
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