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    TRANSISTOR 131-6 USES Search Results

    TRANSISTOR 131-6 USES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 131-6 USES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ACE2341B P-Channel Enhancement Mode Field Effect Transistor Description The ACE2341B uses advanced trench technology to provide excellent RDS ON , low gate charge and operation gate voltages as low as 1.8V. This device is suitable for use as a load switch or other general


    Original     		PDF ACE2341B ACE2341B

    transistor B 892

    Abstract: No abstract text available
    Text: ACE4953B Dual P-Channel Enhancement Mode Field Effect Transistor Description The ACE4953B uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF ACE4953B ACE4953B transistor B 892

    GT1-ID16

    Abstract: GT1-ROP08 GT1-ID16-1 GCN1-100 sysmac c200hx GT1-ID32ML-1 GT1-AD08MX GT1-DA04 omron g2r GT1-ID32ML
    Text:  Multiple I/O DRT-COM/GT1 Multiple I/O is a Configurable I/O System that Allows Field-Based I/O Devices to Communicate to a DeviceNet Master. All I/O Modules Interface to DeviceNet via the Communications Unit.  Accommodates up to 8 I/O Modules  Easy set-up of node address and


    Original     		PDF 32-point 1-800-55-OMRON P06FAD1 GT1-ID16 GT1-ROP08 GT1-ID16-1 GCN1-100 sysmac c200hx GT1-ID32ML-1 GT1-AD08MX GT1-DA04 omron g2r GT1-ID32ML

    psd linear displacement sensor

    Abstract: Z4D-A01 AWG28
    Text:  Z4D-A01 New Micro-displacement Reflective Sensor Technology Detects Very Small Movement and Thickness of Objects  Uses position sensing diode/LED to detect 10 µm movement  Sensor output minimally affected by color and reflection of an object  Requires 5VDC to give two analog


    Original     		PDF Z4D-A01 10-bit 1-800-55-OMRON psd linear displacement sensor Z4D-A01 AWG28

    Untitled

    Abstract: No abstract text available
    Text: High performance aerospace and defense solutions Introduction NXP Semiconductors has been a trusted source and a leading provider of components to the Aerospace and Defense market for over 30 years. NXP’s components are applied in a wide array of Aerospace and Defense systems including Radar, SDR Software Defined Radio , ECM (Electronic Countermeasures) and


    Original     		PDF JESD204A

    str 6307

    Abstract: str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module
    Text: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering


    Original     		PDF ST1200FXF21 500-V, 000-A 300-V, 200-A str 6307 str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module

    Untitled

    Abstract: No abstract text available
    Text: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering


    Original     		PDF ST1200FXF21 500-V, 000-A 300-V, 200-A

    TO247AE

    Abstract: MGW12N120E 25C09
    Text: MOTOROLA Order this document by MGW12N120E/D SEMICONDUCTOR TECHNICAL DATA Preliminary Information MGW12N120E Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    Original     		PDF MGW12N120E/D MGW12N120E TO247AE MGW12N120E 25C09

    WM9090

    Abstract: class ab audio amplifier circuit transistor Highly Efficiency Audio Amplifier EH11 IEC285 "Class G Amplifier" design and implementation of class D audio amplifier
    Text: w WAN_0230 Class G Ultra Low Power Headphone Driver for Audio SubSystems INTRODUCTION The demand for increased efficiency, longer battery life, reduced component count and true hi-fi audio quality in portable multimedia applications is a persistent challenge to system designers. The solution


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev 1: June 2004 AOD402, AOD402L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD402 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, laod


    Original     		PDF AOD402, AOD402L AOD402 O-252

    AOD402

    Abstract: AOD402L
    Text: AOD402 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD402 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is suitable for use in PWM, laod switching and general purpose applications.


    Original     		PDF AOD402 AOD402 AOD402L O-252

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    double TRANSISTOR SMD MARKING CODE mc

    Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN double TRANSISTOR SMD MARKING CODE mc walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578

    Relay Matsua

    Abstract: SFB-CC10 Relay Matsushita MATSUA CONTACTOR TYPE MATSUSHITA CONTACTOR TYPE SF2B-CB10 wiring diagram contactor SF-C13 SF2B-CB5 SF2B
    Text: Selectable safety circuits Utilizing light curtain functions Reduced component costs The light curtain unit has a built-in monitoring function for external devices such as fused relay monitoring . This supports the construction of light curtain peripheral


    Original     		PDF SF-C13 Relay Matsua SFB-CC10 Relay Matsushita MATSUA CONTACTOR TYPE MATSUSHITA CONTACTOR TYPE SF2B-CB10 wiring diagram contactor SF-C13 SF2B-CB5 SF2B

    h8ps OMRON Operation Manual

    Abstract: H8PS-8BFP OMRON H8Ps H8PS-8BF H8PS-8BP omron H8PS-8BFP WIRING DIAGRAM FOR H8PS RPM METER Y92C-30 H7ER
    Text: H8PS H8PS Cam Positioner H8PS Economical Cam Positioner Does the Work of Eight Cam Switches • Easy replacement of mechanical cam switches with absolute encoder input ■ Simple to set, with single-function keys ■ Accepts 330-rpm input, ideal for use with a


    Original     		PDF 330-rpm 16-cam h8ps OMRON Operation Manual H8PS-8BFP OMRON H8Ps H8PS-8BF H8PS-8BP omron H8PS-8BFP WIRING DIAGRAM FOR H8PS RPM METER Y92C-30 H7ER

    1760-CBL-PM02

    Abstract: 12V DC to 24V dC converter circuit diagram 230v to 12v dc circuit diagrams 1606-XLP30E 1760-L12BWB 24V DC to 12V dC converter circuit diagram 1760-L18BWB-EX 1760-L18NWN-EX 1760-L18AWA 1760-L20BBB-EX
    Text: Pico and Pico GFX-70 Programmable Controllers Selection Guide 1760 2 Pico and Pico GFX-70 Programmable Controllers Publication 1760-SG001F-EN-P - May 2006 Pico and Pico GFX-70 Programmable Controllers Pico Overview 3 Small, Simple, and Flexible The Allen-Bradley Pico controller performs simple logic, timing,


    Original     		PDF GFX-70 GFX-70 1760-SG001F-EN-P 1760-SG001E-EN-P 1760-CBL-PM02 12V DC to 24V dC converter circuit diagram 230v to 12v dc circuit diagrams 1606-XLP30E 1760-L12BWB 24V DC to 12V dC converter circuit diagram 1760-L18BWB-EX 1760-L18NWN-EX 1760-L18AWA 1760-L20BBB-EX

    Q1 BC 558 transistor

    Abstract: PW-85075P6 hca 9001
    Text: Make sure the next Card you purchase has. PW-8X010P6, PW-8X030P6, PW-8X075P6 MAGNUM MOTOR DRIVE SERIES 75A, 30A, 10A 600V MAGNUM MOTOR DRIVES FEATURES • 600 VDC Drive for 270 VDC Motors • 10 Amps @25°C, 10 Amps @85°C • 30 Amps @25°C, 30 Amps @85°C


    Original     		PDF PW-8X010P6, PW-8X030P6, PW-8X075P6 PW-8X075P6 1-800-DDC-5757 A5976 D-02/03-0 Q1 BC 558 transistor PW-85075P6 hca 9001

    AOD402

    Abstract: No abstract text available
    Text: AOD402 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD402 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is suitable for use in PWM, laod switching and general purpose applications.


    Original     		PDF AOD402 AOD402 O-252

    specifications of CD4050 ic 16 pin diagram

    Abstract: Q1 BC 558 transistor 30A-075 IC-85 3 phase induction motor fpga
    Text: Make sure the next Card you purchase has. PW-8X010P6, PW-8X030P6, PW-8X075P6 MAGNUM MOTOR DRIVE SERIES 75A, 30A, 10A 600V MAGNUM MOTOR DRIVES ® FEATURES • 600 VDC Drive for 270 VDC Motors • 10 Amps @25°C, 10 Amps @85°C • 30 Amps @25°C, 30 Amps @85°C


    Original     		PDF PW-8X010P6, PW-8X030P6, PW-8X075P6 PW-8X075P6 1-800-DDC-5757 A5976 H-07/05-0 specifications of CD4050 ic 16 pin diagram Q1 BC 558 transistor 30A-075 IC-85 3 phase induction motor fpga

    Untitled

    Abstract: No abstract text available
    Text: Make sure the next Card you purchase has. PW-8X010P6, PW-8X030P6, PW-8X075P6 MAGNUM MOTOR DRIVE SERIES 75A, 30A, 10A 600V MAGNUM MOTOR DRIVES ® FEATURES • 600 VDC Drive for 270 VDC Motors • 10 Amps @25°C, 10 Amps @85°C • 30 Amps @25°C, 30 Amps @85°C


    Original     		PDF PW-8X010P6, PW-8X030P6, PW-8X075P6 PW-8X075P6 1-800-DDC-5757 A5976 G-03/05-0

    Untitled

    Abstract: No abstract text available
    Text: Make sure the next Card you purchase has. PW-8X010P6, PW-8X030P6, PW-8X075P6 MAGNUM MOTOR DRIVE SERIES 75A, 30A, 10A 600V MAGNUM MOTOR DRIVES ® FEATURES • 600 VDC Drive for 270 VDC Motors • 10 Amps @25°C, 10 Amps @85°C • 30 Amps @25°C, 30 Amps @85°C


    Original     		PDF PW-8X010P6, PW-8X030P6, PW-8X075P6 PW-8X075P6 1-800-DDC-5757 A5976 F-01/04-0

    hca 9001

    Abstract: PW-8X075 IC lm741
    Text: Make sure the next Card you purchase has. PW-8X010P6, PW-8X030P6, PW-8X075P6 MAGNUM MOTOR DRIVE SERIES 75A, 30A, 10A 600V MAGNUM MOTOR DRIVES ® FEATURES • 600 VDC Drive for 270 VDC Motors • 10 Amps @25°C, 10 Amps @85°C • 30 Amps @25°C, 30 Amps @85°C


    Original     		PDF PW-8X010P6, PW-8X030P6, PW-8X075P6 PW-8X075P6 1-800-DDC-5757 A5976 J-11/06-0 hca 9001 PW-8X075 IC lm741

    KS5851

    Abstract: Keyboard SAMSUNG 40 ir receiver transistor two pin KS58512 KS5852
    Text: CMOS INTEGRATED CIRCUIT KS5851/2 PULSE DIALER WITH REDIAL 18 DIP The KS5851/2 is a monolithic CMOS integrated circuit which uses an inexpensive RC oscillator for its frequen­ cy reference and provides all the features required for implementing a pulse dialer with 32 digit redial.


    OCR Scan     		PDF KS5851/2 KS5851/2 KS5851 Keyboard SAMSUNG 40 ir receiver transistor two pin KS58512 KS5852

    vq 123

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Information Insulated Gate Bipolar Transistor MGW 12N120E N-Channel Enhancement-Mode Silicon Gate This Insulated Sate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    OCR Scan     		PDF O-247 125CC MGW12N120E vq 123