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    TRANSISTOR 171 Search Results

    TRANSISTOR 171 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 171 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLV98CE

    Abstract: MDA459 MDA456
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV98CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV98CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in an SOT-171


    Original     		PDF BLV98CE OT-171 BLV98CE MDA459 MDA456

    fgt313

    Abstract: transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a
    Text: Part Number Index Part No. Category Description Page Part No. Category Description Page 2SA1186 Transistor Audio and General Purpose LAPT 156 2SC4024 Transistor DC-DC Converter and General Purpose 158 2SA1215 Transistor Audio and General Purpose (LAPT) 156


    Original     		PDF 2SA1186 2SC4024 2SA1215 2SC4131 2SA1216 2SC4138 100VAC 2SA1294 2SC4140 fgt313 transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a

    nec 2561

    Abstract: NEC 2561 transistor 2561 nec 2561 a nec NEC semiconductor 2561 transistor NEC 2561 P1093 100MHZ 200MHZ 2SC3356
    Text: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SC5337 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to


    Original     		PDF 2SC5337 2SC5337 2SC3356 nec 2561 NEC 2561 transistor 2561 nec 2561 a nec NEC semiconductor 2561 transistor NEC 2561 P1093 100MHZ 200MHZ 2SC3356

    2SC4225

    Abstract: 9015 transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4225 is an NPN silicon epitaxial transistor designed for low in millimeters noise amplifier at VHF through UHF band.


    Original     		PDF 2SC4225 2SC4225 9015 transistor

    NTE359

    Abstract: 8-32N
    Text: NTE359 Silicon NPN Transistor RF & Microwave Transistor Description: RF Power Transistor 20W − 175 MHz Features: Specified 28 Volt, 175MHz Characteristics Output Power = 20 Watts Minimum Gain = 8.2dB Efficiency = 60% Characterized from 125 to 175MHz Includes Series Equivalent Impedances


    Original     		PDF NTE359 175MHz 175MHz 8-32-NC-3A NTE359 8-32N

    CA3146D

    Abstract: No abstract text available
    Text: CA3146 General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The CA3146 is designed for general purpose, low power applications in the dc through VHF range. • Guaranteed Base–Emitter Voltage Matching


    Original     		PDF CA3146 CA3146 CA3146D

    transistor s11 s12 s21 s22

    Abstract: NE856M02-T1-AZ NE856M02
    Text: SILICON TRANSISTOR NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C E B E 0.8 MIN DESCRIPTION The NE856M02 is an NPN silicon epitaxial bipolar transistor


    Original     		PDF OT-89 NE856M02 NE856M02 transistor s11 s12 s21 s22 NE856M02-T1-AZ

    semefab

    Abstract: TRANSISTOR ARRAY semefab+051
    Text: PPS 171 Analogue Transistor Array Process Preview Datasheet Rev 1.0 July 2000 Description The Semefab PPS171 Analogue Transistor Array process is available on a foundry basis and is qualified for use with the 700 Series Linear Bipolar Semicustom Arrays from Array Design.


    Original     		PDF PPS171 33x33 118x119 semefab TRANSISTOR ARRAY semefab+051

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFT93W PNP 4 GHz wideband transistor Product specification Supersedes data of November 1992 March 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic,


    Original     		PDF BFT93W OT323 BFT93W BFT93. MBC870 R77/01/pp22

    2SC5436

    Abstract: 2SC5800 uPA863TD-Q2
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor


    Original     		PDF PA863TD 2SC5436, 2SC5800) S21e2 2SC5436 2SC5800 2SC5436 2SC5800 uPA863TD-Q2

    equivalent ZO 607

    Abstract: 2sc5872 2SC5849 HTT1132E 702 smd transistor
    Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872


    Original     		PDF HTT1132E REJ03G0008-0100Z 2SC5872 2SC5849 equivalent ZO 607 2sc5872 2SC5849 HTT1132E 702 smd transistor

    2SC5603

    Abstract: 2SC5676
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA846TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low noise operation • 2 different built-in transistors (2SC5603, 2SC5676) Q1: Built-in high gain transistor


    Original     		PDF PA846TD 2SC5603, 2SC5676) S21e2 2SC5603 2SC5676 2SC5603 2SC5676

    ic 901

    Abstract: 2SC5603 2SC5676 uPA846TC-T1
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA846TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5603, 2SC5676) Q1: 13.5 GHz fT high-gain transistor


    Original     		PDF PA846TC 2SC5603, 2SC5676) S21e2 2SC5603 2SC5676 ic 901 2SC5603 2SC5676 uPA846TC-T1

    2SC5435

    Abstract: 2SC5600 IC 14558 5mA25
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: Built-in high-gain transistor


    Original     		PDF PA841TD 2SC5435, 2SC5600) S21e2 2SC5435 2SC5600 2SC5435 2SC5600 IC 14558 5mA25

    9904 120 13843

    Abstract: 2SC5435 2SC5800 nec 4308
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor


    Original     		PDF PA862TD 2SC5435, 2SC5800) S21e2 2SC5435 2SC5800 9904 120 13843 2SC5435 2SC5800 nec 4308

    702 transistor smd code

    Abstract: HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752
    Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872


    Original     		PDF HTT1132E REJ03G0008-0100Z 2SC5872 2SC5849 702 transistor smd code HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752

    st zo 607

    Abstract: 2SC5436 2SC5800 30614
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor


    Original     		PDF PA863TD 2SC5436, 2SC5800) S21e2 2SC5436 2SC5800 st zo 607 2SC5436 2SC5800 30614

    2SC5005

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the


    Original     		PDF 2SC5005 2SC5005

    2SC4571

    Abstract: 2SC4571-T1 2SC4571-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the


    Original     		PDF 2SC4571 2SC4571 SC-70) 2SC4571-T1 2SC4571-T1 2SC4571-T2

    FT1551

    Abstract: FT2551 fujitsu ring emitter
    Text: FUJITSU MICROELECTRONICS 374=171=2 ODlbblD S S F I 1 I 31E D T - 33 January 1990 Edition 1.1 PRODUCT PROFILB= _ Fujrrsu FT1551 Silicon High Speed Power Transistor DESCRIPTION The FT1E51 Is a silicon NPN general purpose, medium power transistor fabricated w ith Fujitsu's unique Ring Em itter Transistor R ET technology. RE T devices ara


    OCR Scan     		PDF 37417fe2 -r-33 FT1551 FT1E51 FT2551, 85MHz T-33-09 FT2551 fujitsu ring emitter

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    transistor st

    Abstract: No abstract text available
    Text: & MOTOROLA CA3146 General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The CA3146 is designed for general purpose, low power applications in the dc through VHF range. SEMICONDUCTOR


    OCR Scan     		PDF CA3146 CA3146 transistor st

    transistor D 2395

    Abstract: NEC 2501 re 443
    Text: DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4225 is an NPN silicon epitaxial transistor designed for low in millimeters noise am plifier at VHF through UHF band.


    OCR Scan     		PDF 2SC4225 2SC4225 transistor D 2395 NEC 2501 re 443

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE t iT E I> • bb53^31 □D3TD74 OIL A APX BLV59 U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope primarily intended fo r use as linear amplifier in u.h.f. television transmitters. Features:


    OCR Scan     		PDF D3TD74 BLV59 OT-171 002T0fl2