F1 J37
Abstract: class-A amplifier RF NPN POWER TRANSISTOR 2.5 GHZ 1S2075 NEL2001 NEL200101-24 NEL2004 NEL2012 NEL2035
Text: DATA SHEET SILICON POWER TRANSISTOR NEL200101-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier NEL2001012-24 of NPN epitaxial microwave power transistors 1.5 ±0.2 is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. 1.0 MIN. OUTLINE DIMENSIONS Unit: mm
|
Original
|
NEL200101-24
NEL2001012-24
F1 J37
class-A amplifier
RF NPN POWER TRANSISTOR 2.5 GHZ
1S2075
NEL2001
NEL200101-24
NEL2004
NEL2012
NEL2035
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
|
Original
|
BFG35
OT223
MSB002
OT223.
R77/03/pp14
|
PDF
|
DICLAD522T
Abstract: NEL2001 NEL2004 NEL2012 NEL2035 NEL2035F03-24 V06C ZO 189 transistor
Text: DATA SHEET SILICON POWER TRANSISTOR NEL2035F03-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier OUTLINE DIMENSIONS Unit: mm 2.8 ±0.2 NEL2035F03-24 of NPN epitaxial microwave power transistors 2 It incorporates emitter ballast resistors, gold metallizations and
|
Original
|
NEL2035F03-24
NEL2035F03-24
DICLAD522T
NEL2001
NEL2004
NEL2012
NEL2035
V06C
ZO 189 transistor
|
PDF
|
TRANSISTOR GENERAL DIGITAL L6
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
|
Original
|
BFG35
OT223
BFG35
MSB002
OT223.
R77/03/pp14
771-BFG35-T/R
TRANSISTOR GENERAL DIGITAL L6
|
PDF
|
BFG35
Abstract: TRANSISTOR GENERAL DIGITAL L6 BFG35 amplifier
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
|
Original
|
BFG35
OT223
MSB002
OT223.
R77/03/pp14
BFG35
TRANSISTOR GENERAL DIGITAL L6
BFG35 amplifier
|
PDF
|
BFG35
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
|
Original
|
BFG35
OT223
MSB002
OT223.
125006/03/pp16
BFG35
|
PDF
|
d1763
Abstract: d1780 D1780 transistor TRANSISTOR D1792 D1789 transistor D1795 D1789 NT 407 F transistor D1778 D1795 transistor
Text: PRELIMINARY DATA SHEET SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of
|
Original
|
NEL2012F03-24
NEL2012F03-24
d1763
d1780
D1780 transistor
TRANSISTOR D1792
D1789 transistor
D1795
D1789
NT 407 F transistor
D1778
D1795 transistor
|
PDF
|
SC15
Abstract: LTE42008R Data Handbook sc15
Text: DISCRETE SEMICONDUCTORS DATA SHEET LTE42008R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 24 Philips Semiconductors Product specification NPN microwave power transistor
|
Original
|
LTE42008R
OT440A
SCA53
127147/00/02/pp12
SC15
LTE42008R
Data Handbook sc15
|
PDF
|
smd JH transistor
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF1043 UHF power LDMOS transistor Preliminary specification 2002 Jul 24 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1043 FEATURES PINNING - SOT538A • Easy power control PIN DESCRIPTION
|
Original
|
BLF1043
SCA73
603516/02/pp11
smd JH transistor
|
PDF
|
VO6C
Abstract: NEL2004 NEL2035 NEL2001 NEL2004F02-24 NEL2012 VO-6C
Text: DATA SHEET SILICON POWER TRANSISTOR NEL2004F02-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and 2 2 ±0.2 3 ±0.2 2 ±0.2
|
Original
|
NEL2004F02-24
NEL2004F02-24
VO6C
NEL2004
NEL2035
NEL2001
NEL2012
VO-6C
|
PDF
|
JESD625-A
Abstract: BLS7G2729L-350P radar IF UNIT
Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 1 — 24 May 2011 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 2.9 GHz range. Table 1.
|
Original
|
BLS7G2729L-350P;
BLS7G2729LS-350P
BLS7G2729L-350P
LS-350P
JESD625-A
radar IF UNIT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 1 — 24 May 2011 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 2.9 GHz range. Table 1.
|
Original
|
BLS7G2729L-350P;
BLS7G2729LS-350P
BLS7G2729L-350P
LS-350P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D034 RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of 1997 Feb 18 1999 Dec 24 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A
|
Original
|
M3D034
RZ1214B65Y
OT443
|
PDF
|
BP317
Abstract: RZ1214B65Y L-Band
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D034 RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of 1997 Feb 18 1999 Dec 24 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A
|
Original
|
M3D034
RZ1214B65Y
OT443A
125002/03/pp8
BP317
RZ1214B65Y
L-Band
|
PDF
|
|
|
ROGERS DUROID
Abstract: BLS6G2735L-30
Text: BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 3 — 24 September 2012 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1.
|
Original
|
BLS6G2735L-30;
BLS6G2735LS-30
BLS6G2735L-30
6G2735LS-30
ROGERS DUROID
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 PINNING FEATURES • Very high power gain PIN • Very low noise figure
|
Original
|
M3D124
BFU540
BFU540
MSB842
125104/00/04/pp11
|
PDF
|
2222-581
Abstract: capacitor MKT Philips PHILIPS MKT CAPACITOR BLF2048 capacitor 400 MKT philips C26C27
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 2000 May 24 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain
|
Original
|
M3D427
BLF2048
OT539A
603516/09/pp11
2222-581
capacitor MKT Philips
PHILIPS MKT CAPACITOR
BLF2048
capacitor 400 MKT philips
C26C27
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BLL6G1214L-250; BLL6G1214LS-250 LDMOS L-band radar power transistor Rev. 2 — 24 June 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1.
|
Original
|
BLL6G1214L-250;
BLL6G1214LS-250
BLL6G1214L-250
1214LS-250
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-90 UHF power LDMOS transistor Product specification Supersedes data of 2002 Sep 09 2003 Feb 24 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-90 FEATURES PINNING - SOT502A
|
Original
|
M3D379
BLF2022-90
BLF2022-90
OT502A
15-Aug-02)
|
PDF
|
smd transistor marking C14
Abstract: TRANSISTOR SMD MARKING CODE w2 smd TRANSISTOR code marking w2 smd code marking C8 all transistor book
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Product specification Supersedes data of 2002 Jul 04 2003 Feb 24 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-70 FEATURES PINNING - SOT502A
|
Original
|
M3D379
BLF2022-70
BLF2022-70
OT502A
15-Aug-02)
smd transistor marking C14
TRANSISTOR SMD MARKING CODE w2
smd TRANSISTOR code marking w2
smd code marking C8
all transistor book
|
PDF
|
BLF2022-70
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Product specification Supersedes data of 2002 Jul 04 2003 Feb 24 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-70 FEATURES PINNING - SOT502A
|
Original
|
M3D379
BLF2022-70
OT502A
SCA75
613524/05/pp12
BLF2022-70
|
PDF
|
BLF2022-90
Abstract: BLF2022S-90 MBL105
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF2022-90; BLF2022S-90 UHF power LDMOS transistor Product specification Supersedes data of 2003 Feb 24 2003 Jun 13 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-90; BLF2022S-90
|
Original
|
M3D379
M3D461
BLF2022-90;
BLF2022S-90
SCA75
613524/04/pp12
BLF2022-90
BLF2022S-90
MBL105
|
PDF
|
nec 0882
Abstract: transistor NEC 0882 p NEC silicon epitaxial power transistor 1694 al 232 nec TRANSISTOR 0835 1652 nec
Text: PRELIMINARY DATA SHEET_ SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of
|
OCR Scan
|
NEL2012F03-24
NEL2012F03-24
nec 0882
transistor NEC 0882 p
NEC silicon epitaxial power transistor 1694
al 232 nec
TRANSISTOR 0835
1652 nec
|
PDF
|
NEC CI 506
Abstract: NEL2012F03-24 P11768EJ1V0DS00 V06C transistor 1654 transistor 1653 1656 nec nec 150 j04
Text: PRELIMINARY DATA SHEET_ SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of
|
OCR Scan
|
NEL2012F03-24
NEL2012F03-24
DICLAD522TÂ
NEC CI 506
P11768EJ1V0DS00
V06C
transistor 1654
transistor 1653
1656 nec
nec 150 j04
|
PDF
|
