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    TRANSISTOR 2N3414 Search Results

    TRANSISTOR 2N3414 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2N3414 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3414 Silicon transistor. 25V 500mA. 4.65 Transistors Transistors Bipo. 1 of 1 Home Part Number: 2N3414 Online Store 2N3414 Diodes Silic o n trans is t o r. 2 5 V 5 0 0 m A. Transistors Enter code INTER3 at


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    2N3414 500mA. com/2n3414 2N3414 PDF

    2N3415

    Abstract: transistor 2n3415 2N3414 transistor 2n3414 MPS-3417 transistor 2N3416 2n3417 2N3416 NPN Silicon Epitaxial Planar Transistor to92 3414
    Text: 2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3414, MPS3414 series types are NPN silicon transistors, manufactured by the epitaxial planar process, designed for general


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    2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 2N3414, transistor 2n3415 transistor 2n3414 MPS-3417 transistor 2N3416 2n3417 NPN Silicon Epitaxial Planar Transistor to92 3414 PDF

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


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    RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 PDF

    transistor 2N3563

    Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
    Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .


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    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 PDF

    NPN transistor ECB TO-92

    Abstract: 2N3414 0181 ecb
    Text: NPN SILICON TRANSISTOR DESCRIPTION 2N3414 is NPN silicon transistor designed for general purpose AF medium power applications. TO-92 ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Operating & Storage Junction Temperature


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    2N3414 500mA 100jiA 10fiA NPN transistor ECB TO-92 0181 ecb PDF

    2N3414

    Abstract: 04bc hFE-75 transistor
    Text: 2N3414 NPN SILICON TRANSISTOR DESCRIPTION 2N3414 is NPN silicon transistor designed for general purpose AF medium power applications. 04.68 0.18 TO-92B 4.6 (0.18) 3.58 (0.14) B c e\ 0.4 J(0.016) n 2.54 10° — 0.51 "(0 .02) 12.7 (0-5) min. ( 0 . 1) Bottom view


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    2N3414 O-92B 360mW 04bc hFE-75 transistor PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    2N3415

    Abstract: MPS3414 MPS3415 2N3414 2N3416 2N3417 MPS3416 MPS3417 3414 TRANSISTOR 2n3415 transistor
    Text: Datasheet 2N3414 2N3415 2N3416 2N3417 MPS3414 'MPS34.15 MPS3416 MPS3417 NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-92 CASE* M anufacturers of W orld C lass Discrete S em iconductors


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    2N3414 MPS3414 2N3415 MPS3415 2N3416 MP53416 2N3417 MPS3417 2N3414, MPS3414 MPS3415 MPS3416 MPS3417 3414 TRANSISTOR 2n3415 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: / o z o Ë I— O LU DESCRIPTION 2N3414 is NPN silicon transistor designed for general purpose AF medium power applications. ~ "j 04.68 (0.18) j" TO-92B T 4.6 (0.18) -• - (0.14) 0.51 12.7 (0.5) min. (0 .02 ) Bottom view Unit: mm(inch) ii ABSOLUTE MAXIMUM RATINGS


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    2N3414 O-92B 500mA 360mW 10reakdown 10jjA PDF

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


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    FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159 PDF

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    bc 7-25 pnp

    Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
    Text: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K


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    1N914 1N4148 1N4150 1N4565 1N4565A 1N4566 1N4566A 1N4570 1N4570A 1N4571 bc 7-25 pnp transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor PDF

    bc 7-25 pnp

    Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
    Text: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30


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    1N914 1N4148 1N4150 1N5229 1N5230 1N5231 1N5232 1N5233 1N5234 1N5235 bc 7-25 pnp transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA PDF

    2n2926 transistor

    Abstract: TRANSISTOR 2n3901 2N2926 NPN high power transistor beta transistor 150 2N3404 2N2711 2n3877 transistor 2N2714 2N2923
    Text: SILICON S IG N A L TR A N S IS T O R S G E N E R A L PURPOSE A M PLIFIER S TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (SA T ) hF E Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924


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    2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2n2926 transistor TRANSISTOR 2n3901 NPN high power transistor beta transistor 150 2N3404 2n3877 transistor PDF

    beta transistor 2N2222

    Abstract: 1N4532 1n9148 2N2926 equivalent 2n RF transistor 2N5249 2N6006 DIODE 1N3605 2N4424 equivalent 2N6002
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 GET3S3B GET3638A 2NSOOO 2N6001 2N6003 2N6000 2N6002 2N60D2 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003


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    50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 beta transistor 2N2222 1N4532 1n9148 2N2926 equivalent 2n RF transistor 2N5249 2N6006 DIODE 1N3605 2N4424 equivalent 2N6002 PDF

    PNP Transistor 2N2222 equivalent

    Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching
    Text: SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification Sheet No. 1 35.90 1N914B M46P-X510


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    1N914 1N914A 1N914B M46P-X510 1N3064 M46P-X507 1N3600 1N3605 M46P-X516 1N4150 PNP Transistor 2N2222 equivalent DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching PDF

    diode D07-15

    Abstract: diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 1N814 D07 15 DIODE 1N3605
    Text: SILICON SIGNAL DIODES 100 MA TYPFS SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification


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    1N251 1N252 1N461 1N625 1N62G 1N814 1N903 1N903A 1N904 1N914 diode D07-15 diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 D07 15 DIODE 1N3605 PDF

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    d33025

    Abstract: 2N3392 complementary 2N3856 2n3860 transistor COMPLEMENTARY PNP-NPN TRANSISTORS 2N5355 2N6000 2N3856A 2N4424 2n2926 transistor
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cEO '~'\„^ I Voltage 50/iA to NPN 5mA to 5mA ra p to 20 to 2N6000 2N60Q2 2N6001 2N6S03 2N6000 2N6002 N PN PN P 2NB001 2N W Q 3 2N6000 2N6002 2N6001 2N6003 pnp : G ET3 0 14 GET3S3B GET36 38A GET3638


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    50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 d33025 2N3392 complementary 2N3856 2n3860 transistor COMPLEMENTARY PNP-NPN TRANSISTORS 2N5355 2N6000 2N3856A 2N4424 2n2926 transistor PDF

    2N2925

    Abstract: 2N3405 n3860 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C K A G E b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394


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    2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3405 n3860 PDF