Untitled
Abstract: No abstract text available
Text: CTLT8099-M322S w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT8099-M322S is a silicon transistor manufactured by the epitaxial planar process, epoxy molded in a low profile, 2x2mm TLM surface mount package, designed for general
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CTLT8099-M322S
TLM322S
100mA,
100mA
100MHz
10-October
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Untitled
Abstract: No abstract text available
Text: CTLT8099-M322S w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT8099-M322S is a silicon transistor manufactured by the epitaxial planar process, epoxy molded in a low profile, 2x2mm TLM surface mount package, designed for general
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CTLT8099-M322S
CTLT8099-M322S
TLM322S
100mA,
100mA
100MHz
29-March
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Untitled
Abstract: No abstract text available
Text: CTLT8099-M322S w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT8099-M322S is a silicon transistor manufactured by the epitaxial planar process, epoxy molded in a low profile, 2x2mm TLM surface mount package, designed for general
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CTLT8099-M322S
CTLT8099-M322S
TLM322S
100mA,
100mA
100MHz
10-October
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DTC114E
Abstract: 2SA2018 FUMF21N 2SA20 transistor F21
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Power management Dual-transistors FUMF21N TRANSISTOR WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar transistor FEATURES z 2SA2018 and DTC114E are housed independently in a package.
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WBFBP-06C
FUMF21N
WBFBP-06C
2SA2018
DTC114E
100MHz
FUMF21N
2SA20
transistor F21
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FJMA790
Abstract: No abstract text available
Text: FJMA790 tm PNP Epitaxial Silicon Transistor High current surface mount PNP silicon switching transistor for load management in portable applications • High Collector current • Low Collector-Emitter Saturation Voltage • RoHS Compliant RoHS Compliant Pin 1
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FJMA790
FJMA790
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Power management Dual-transistors FUMF21N TRANSISTOR WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar transistor FEATURES z 2SA2018 and DTC114E are housed independently in a package.
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WBFBP-06C
FUMF21N
WBFBP-06C
2SA2018
DTC114E
100MHz
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Untitled
Abstract: No abstract text available
Text: FJMA790 tm PNP Epitaxial Silicon Transistor High current surface mount PNP silicon switching transistor for load management in portable applications • High Collector current • Low Collector-Emitter Saturation Voltage • RoHS Compliant Pin 1 Pin 3 Collector
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FJMA790
FJMA790
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GS 78L05
Abstract: BH RV transistor pp16 BLF368
Text: DISCRETE SEMICONDUCTORS BLF368 VHF push-pull power MOS transistor Product specification Supersedes data of September 1992 File under Discrete Semiconductors, SC19a Philips Sem iconductors 1998 Jul 29 PHILIPS Philips Semiconductors Product specification VHF push-pull power MOS transistor
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BLF368
SC19a
BLF368
OT262A1
125108/00/03/pp16
GS 78L05
BH RV transistor
pp16
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FJMA790
Abstract: CO75
Text: FJMA790 tm PNP Epitaxial Silicon Transistor High current surface mount PNP silicon switching transistor for load management in portable applications • High Collector current • Low Collector-Emitter Saturation Voltage • RoHS Compliant Pin 1 Pin 3 Collector
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FJMA790
FJMA790
CO75
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BR 5551
Abstract: 5551 datasheet transistor 5401 ic for cd rom FMMDT5451 5551 application for 5401 TRANSISTOR 5551 transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Transistors FMMDT5451 TRANSISTOR DESCRIPTION PNP and NPN Epitaxial Silicon Transistor WBFBP-06C 2x2×0.5 unit: mm FEATURES Complementary Pair z One 5551-Type NPN, One 5401-Type PNP
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WBFBP-06C
FMMDT5451
WBFBP-06C
5551-Type
5401-Type
-10mA
100MHz
BR 5551
5551 datasheet
transistor 5401
ic for cd rom
FMMDT5451
5551
application for 5401 TRANSISTOR
5551 transistor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Transistors FMMDT5451 TRANSISTOR DESCRIPTION PNP and NPN Epitaxial Silicon Transistor WBFBP-06C 2x2×0.5 unit: mm FEATURES Complementary Pair z One 5551-Type NPN, One 5401-Type PNP
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WBFBP-06C
FMMDT5451
WBFBP-06C
5551-Type
5401-Type
-10mA
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-05C Digital transistors built-in resistors FUMG9N TRANSISTOR WBFBP-05C (2x2×0.5) unit: mm DESCRIPTION Epitaxial planar type NPN silicon transistor (Built-in resistor type) FEATURES z Two DTC114E in a package.
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WBFBP-05C
WBFBP-05C
DTC114E
100MHz
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marking A1 TRANSISTOR
Abstract: marking G9 transistor 05c transistor marking G9 DTC114E
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-05C Digital transistors built-in resistors FUMG9N TRANSISTOR WBFBP-05C (2x2×0.5) unit: mm DESCRIPTION Epitaxial planar type NPN silicon transistor (Built-in resistor type) FEATURES z Two DTC114E in a package.
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WBFBP-05C
WBFBP-05C
DTC114E
100MHz
marking A1 TRANSISTOR
marking G9
transistor 05c
transistor marking G9
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra ILD1214EL200 TECHNOLOGIES, INC. L-Band RF Power LDMOS Transistor Silicon LDMOS High Power Gain Superior Thermal Stability The high power pulsed transistor part number ILD1214EL200 is designed for L-Band systems operating at 1.215–1.400 GHz. Operating at a pulse width of 16ms
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ILD1214EL200
ILD1214EL200
ILD1214EL200-REV-NC-DS-REV-NC
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MCP73830
Abstract: MOSFET battery charge MCP73830L
Text: MCP73830/L Single-Cell Li-Ion/Li-Polymer Battery Charge Management Controllers in 2x2 TDFN Features Description • Complete Linear Charge Management Controller - Integrated Pass Transistor - Integrated Current Sense - Integrated Reverse Discharge Protection
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MCP73830/L
MCP73830L:
MCP73830:
Auto-3-5778-366
DS25049A-page
MCP73830
MOSFET battery charge
MCP73830L
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MCP73830LT
Abstract: MCP73830T MCP73830 "Charge Management Controller"
Text: MCP73830/L Single-Cell Li-Ion/Li-Polymer Battery Charge Management Controllers in 2x2 TDFN Features Description • Complete Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Integrated Reverse Discharge Protection
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MCP73830/L
MCP73830L:
MCP73830:
DS25049B-page
MCP73830LT
MCP73830T
MCP73830
"Charge Management Controller"
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Untitled
Abstract: No abstract text available
Text: MCP73830/L Single-Cell Li-Ion/Li-Polymer Battery Charge Management Controllers in 2x2 TDFN Features: Description: • Complete Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Integrated Reverse Discharge Protection
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MCP73830/L
MCP73830L:
MCP73830:
Aut60-4-227-8870
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Untitled
Abstract: No abstract text available
Text: MCP73830/L Single-Cell Li-Ion/Li-Polymer Battery Charge Management Controllers in 2x2 TDFN Features: Description: • Complete Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Integrated Reverse Discharge Protection
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MCP73830/L
MCP73830L:
MCP73830:
DS20005049C-page
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PDF
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Untitled
Abstract: No abstract text available
Text: MCP73830/L Single-Cell Li-Ion/Li-Polymer Battery Charge Management Controllers in 2x2 TDFN Features Description • Complete Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Integrated Reverse Discharge Protection
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MCP73830/L
MCP73830L:
MCP73830:
DS25049B-page
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TV power transistor
Abstract: PTB20101
Text: ERICSSON PTB 20101 175 Watts P-Sync, 470 - 860 MHz UHF TV Power Transistor Key Features Description • • • • • The 20101 is a class AB, NPN, common emitter RF Power Transistor intended for 28 VDC operation across the 470-860 MHz frequency band. It is rated at 175 Watts P-Sync mini
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2x200mA
2x200mA
TV power transistor
PTB20101
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2n297a
Abstract: 2n297
Text: 2N297 A 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 POWER TRANSISTOR GERMANIUM PNP POWER TRANSISTOR 2N297A is a germanium PNP alloy junction power t r a n s i > t o r m e r t i n g m i l i t a r y specification MlL-T-19500 36A
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2N297
2N297A
MlL-T-19500
2X297A
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1000w inverter PURE SINE WAVE schematic diagram
Abstract: 1000w inverter PURE SINE WAVE schematic diagram smps 500w half bridge SCHEMATIC 1000w Power Semiconductor Applications Philips Semiconductors SCHEMATIC 1000w smps smps circuit diagram 48V SMPS 1000w "Power Semiconductor Applications" Philips BU2508 Transistor 500w SINE WAVE inverter schematic diagram smps 1kW
Text: S.M.P.S. Power Semiconductor Applications Philips Semiconductors CHAPTER 2 Switched Mode Power Supplies 2.1 Using Power Semiconductors in Switched Mode Topologies including transistor selection guides 2.2 Output Rectification 2.3 Design Examples 2.4 Magnetics Design
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RJJ0319DSP
Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?
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R07CS0003EJ0200
RJJ0319DSP
BCR8PM equivalent
RJP30H2
N0201
rjj0319
NP109N055PUJ
rjk5020
RJP30E2DPP
NP75N04YUG
lg washing machine circuit diagram
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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