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    TRANSISTOR 3D Search Results

    TRANSISTOR 3D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 3D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NEC semiconductor

    Abstract: 2sd2217 transistor PT 4500 C11531E NEC C11531E
    Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2217 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2217 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching.


    Original     		PDF 2SD2217 2SD2217 C11531E) NEC semiconductor transistor PT 4500 C11531E NEC C11531E

    2SC4553

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4553 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4553 is a power transistor designed especially for low PACKAGE DRAWING UNIT: mm collector saturation voltage and features large current switching at a


    Original     		PDF 2SC4553 2SC4553

    sot-23 MARKING CODE 3d

    Abstract: marking code 3d Transistor 3D 3D sot23 MARKING CODE 16 transistor sot23 transistor Vbe 3d transistor
    Text: Central CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications. Marking Code is 3D.


    Original     		PDF CMPTH81 OT-23 100MHz 26-August sot-23 MARKING CODE 3d marking code 3d Transistor 3D 3D sot23 MARKING CODE 16 transistor sot23 transistor Vbe 3d transistor

    smd transistor 2a

    Abstract: 5a SMD Transistor
    Text: Transistor IC Transistors Transistor DIP SMDType Type SMD Type Product specification 3DD13007 • Features TO-263 Unit: mm +0.1 1.27-0.1 ● High Speed Switching +0.2 4.57-0.2 +0.2 5.28-0.2 2 3 +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 +0.2 2.54-0.2 0.1max +0.1 1.27-0.1


    Original     		PDF 3DD13007 O-263 smd transistor 2a 5a SMD Transistor

    Untitled

    Abstract: No abstract text available
    Text: BLF647PS Broadband power LDMOS transistor Rev. 2 — 18 November 2013 Product data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The


    Original     		PDF BLF647PS

    UT-090C-25

    Abstract: BLF647P 130005 power transistor
    Text: BLF647P Broadband power LDMOS transistor Rev. 2 — 12 April 2013 Product data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The


    Original     		PDF BLF647P UT-090C-25 BLF647P 130005 power transistor

    Untitled

    Abstract: No abstract text available
    Text: MMBTA44 500V, 0.2A NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High Voltage Transistor A L 3 3 MARKING C B Top View 1 1 3D 2 K E 2 D PACKING INFORMATION


    Original     		PDF MMBTA44 OT-23 16-Aug-2012

    Untitled

    Abstract: No abstract text available
    Text: BLF645 Broadband power LDMOS transistor Rev. 01 — 27 January 2010 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The


    Original     		PDF BLF645 BLF645

    BLF645

    Abstract: C4532X7R1E475MT020U RF35
    Text: BLF645 Broadband power LDMOS transistor Rev. 01 — 27 January 2010 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The


    Original     		PDF BLF645 BLF645 C4532X7R1E475MT020U RF35

    transistor d325

    Abstract: B511 transistor 3DD325 B511 TIP31c PNP Transistor D325 D325 transistor 3CD511 3a npn to220 transistor npn transistor 3A
    Text: TRANSISTOR TO-220 PLASTIC-ENCAPSULATE BIPOLAR TRANSISTOR HFE PC I C B vcbo B vceo mW (mA) (V) (V) MIN MAX I C (mA) V ce (sat) V ce (V) (V) IC (mA) Ib (mA) fT (MHz) PIN ARRAY SUBSTITUTE TYPE 5 BCE 2SD880 50 BCE 3DD325 200 -500 -3 -1 -1500 -150 50 BCE 3CD511


    Original     		PDF O-220 2SD880 3DD325 3CD511 2SB834 TIP31C TIP32C TIP41C TIP42C transistor d325 B511 transistor 3DD325 B511 TIP31c PNP Transistor D325 D325 transistor 3CD511 3a npn to220 transistor npn transistor 3A

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    2SC5169

    Abstract: low noise transistor table
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5169 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SCS169 is a silicon NPN epitaxial type transistor. It Is designed for Unit:mm OUTLINE DRAWING


    OCR Scan     		PDF 2SC5169 2SCS169 100mVtyp X10-3 2SC5169 low noise transistor table

    2SA1928

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1928 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION _ SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1928 is a silicon PNP epitaxial type transistor. It is designed for low noise differential amplify application.


    OCR Scan     		PDF 2SA1928 2SA1928 -100V 270Hz 270Hz

    2sa1929

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1929 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Mitsubishi 2SA1929 is a silicon PNP epitaxial type transistor. It is designed for


    OCR Scan     		PDF 2SA1929 2SA1929 -100V 300mA, 100Hz) 110mV 270Hz X10-3

    2SA1927

    Abstract: 05SV ra-100
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2 S A 1 9 2 7 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1927 is a silicon PNP epitaxial type transistor. It is designed for OUTLINE DRAWING


    OCR Scan     		PDF 2SA1927 2SA1927 100mVtyp 270Hz X10-3 05SV ra-100

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK565-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channei enhancement mode logic level fleld-effect power transistor in a


    OCR Scan     		PDF BUK565-200A SQT404

    4312 020 36642

    Abstract: BLV37 transistor tt 2222 9t2 transistor ca212 TT 2222 npn transistor 4312
    Text: PHILIPS INTERNATIONAL bSE ]> • 711002b OObS'in 3dfl « P H I N BLV37 A VHF PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in V H F broadcast transmitters. Features • Internally matched input fo r wideband operation and high power gain


    OCR Scan     		PDF 711002b BLV37 OT179 711Da2b 4312 020 36642 BLV37 transistor tt 2222 9t2 transistor ca212 TT 2222 npn transistor 4312

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fleld-effect power transistor in a plastic envelope suitable for surface mount applications.


    OCR Scan     		PDF BUK581-60A OT223

    Untitled

    Abstract: No abstract text available
    Text: . N E C ELECTRONICS INC 3QE D • b427525 G 0 2 ci50,:i 7 ■ T ^ " 4 i *“ W PHOTO TRANSISTOR _ P H 1 0 6 PHOTO TRANSISTOR The PH 106 is a photo transistor in a plastic molded package, and PACKAG E DIMENSIONS very suitable for a detector of a photo interrupter.


    OCR Scan     		PDF b427525 b427S5S PH106 T-41-61

    Untitled

    Abstract: No abstract text available
    Text: •I bb53^31 002flT33 624 N AHER PHILIPS/DISCRETE IAPX b lE BLV20 D V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­


    OCR Scan     		PDF 002flT33 BLV20

    BUK454-600B

    Abstract: T0220AB t 326 Transistor
    Text: N AMER P H I L I P S / D I S C R E T E b^E D • □□3Dfc>3D TM2 ■ I APX b ¡35 3^31 Product Specification Philips Semiconductors BUK454-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.


    OCR Scan     		PDF 0G30b3G BUK454-600B T0220AB BUK454-600B T0220AB t 326 Transistor

    Untitled

    Abstract: No abstract text available
    Text: bbSB'Gl □D2^3DD flflT • APX N AKER PHILIPS/DISCRETE bH E BLW31 » V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters with a nominal supply voltage o f 13,5 V. Because of the high gain and excellent power


    OCR Scan     		PDF BLW31 BFQ43

    TRANSISTOR 3000W 400V

    Abstract: 3000w smps smps 3000W flyback 3000w smps 1500W SGSF661 3000w mosfet circuit
    Text: • 7^537 005^555 Q ■ H~~’ 3>1>- I S G ì S 6 SGS-THOMSON i^ OT KS S-TH0MS0N _ SGSF661 3DE » FASTSWITCH HOLLOW-EMITTER NPN TRANSISTOR ■ HIGH SW ITC H IN G SPEED NPN POWER TRANSISTOR ■ HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLICA­


    OCR Scan     		PDF SGSF661 70kHz 71BqB37 TRANSISTOR 3000W 400V 3000w smps smps 3000W flyback 3000w smps 1500W SGSF661 3000w mosfet circuit