transistor D 2394
Abstract: No abstract text available
Text: Agilent AT-41411 Surface Mount Low Noise Silicon Bipolar Transistor Chip Data Sheet Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz Description The AT-41411 bipolar transistor is fabricated using Agilent’s 10 GHz fT Self-Aligned-Transistor SAT
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AT-41411
OT-143
5965-0276E
5989-2646EN
transistor D 2394
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AT-41486-TR1G
Abstract: No abstract text available
Text: AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-41486 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41486 is housed in a low cost surface mount .085" diameter plastic package. The 4 micron emitter-toemitter pitch enables this transistor to be used in many
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AT-41486
5989-2648EN
AV02-3624EN
AT-41486-TR1G
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TS 4140
Abstract: e 4140 SHD446010
Text: SENSITRON SEMICONDUCTOR SHD446010 TECHNICAL DATA DATA SHEET 4140, REV. - SMALL SIGNAL TRANSISTOR DESCRIPTION: SINGLE PNP SMALL SIGNAL TRANSISTOR IN AN LCC-4 PACKAGE MAXIMUM RATINGS RATING ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED . CONDITIONS
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SHD446010
TS 4140
e 4140
SHD446010
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nec 2741
Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.
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2SC4226
2SC4226
SC-70
2SC4226-T1
nec 2741
2SC4226 datasheet
2SC4226-T1
2SC4226-T2
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PDF
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JB marking transistor
Abstract: transistor marking JB MMBT5550 marking JB
Text: SAMSUNG SEMICONDUCTOR INC MMBT5550 14E D | 7*^4142 0007505 S. J NPN EPITAXIAL SILICON TRANSISTOR -HIGH VOLTAGE TRANSISTOR T-jq-R ' SOT.23 ~ ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic
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OCR Scan
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MMBT5550
10/iA,
JB marking transistor
transistor marking JB
marking JB
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PDF
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC* MMBT4126 14E D | 7^4142 0Q072tfl Q | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Cotlector-Emitter Voltage Emitter-Base Voltage
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MMBT4126
0Q072tfl
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PDF
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MMBA811C7
Abstract: MMBT5086 transistor marking fl VC80
Text: SAMSUNG SEMICONDUCTOR INC MMBA811C7 14E D §7^4143 0007530 & | PNP EPITAXIAL SILICO N TRANSISTOR DRIVER TRANSISTOR " SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vottage Coitector Current
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MMBA811C7_
MMBT5086
OT-23
100MHz
MMBA811C7
transistor marking fl
VC80
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MARKING BL
Abstract: fS 4142 transistor 513 MMBC1622D6
Text: SAMSUNG S EMICONDUCTOR INC MMBC1622D6 14E D ^7Tt.4145 0007542 4 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Base Voltage Cotector-Emitter Voltage Emitter-Base Voltage Collector Current
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MMBC1622D6
100mA,
100MHz
MARKING BL
fS 4142
transistor 513
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8Q transistor
Abstract: MMBTA56 MPSA55 SS MARKING TRANSISTOR
Text: SAMSUNG SEMICONDUCTOR INC . MMBTA56 IME D | 7^4142 00Q72T? 7 | PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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MMBTA56
MPSA55
OT-23
-10mA
100mA
-100mA,
-100mA
100mA,
100MHz
8Q transistor
MMBTA56
SS MARKING TRANSISTOR
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PDF
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MMBT2222
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MMBT2222 14E D 7^ 4145 Q0075S3 T | NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS (T,=25°C Characteristic CoBector-Base Voltage Codector-Emltter Voltage Emitter-Base Voltage Collector Current
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1b414E
0007253M
MMBT2222
lo-10mA,
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PDF
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transistor
Abstract: Samsung Semiconductor
Text: r 7 [ SAMSUNG SEMICONDUCTOR INC MMBC1623L3 m e o § 7^4142 0007am, i | NPN EPITAXIAL SILICON TRANSISTOR — : -' T AMPLIFIER TRANSISTOR - a R - - SO T-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage
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0007am,
MMBC1623L3
transistor
Samsung Semiconductor
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PDF
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NEC IC D 553 C
Abstract: nec 2741 702 mini transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.
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2SC4226
2SC4226
SC-70
2SG4226-T1
NEC IC D 553 C
nec 2741
702 mini transistor
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PDF
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MMBA812M4
Abstract: MMBT5086
Text: , SAMSUNG SEMICONDUCTOR INC MMBA812M4 ltíE 0 §7^4142 0007233 3 f PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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MMBA812M4
OT-23
MMBT5086
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PDF
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BCX70G
Abstract: MMBT5088
Text: SAMSUNG SEMICONDUCTOR INC BCX70G me Ó J 7^4142 OO0725G 5 | NPN EPITAXIAL SILICON TRANSISTOR “ T — GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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0GQ725G
BCX70G
OT-23
MMBT5088
100MHz
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PDF
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BCX71J
Abstract: MMBT5086
Text: SA MS UN G SEMICONDUCTOR INC BCX71J 1ME D | 7*^4142 000722b t, | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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BCX71J
MMBT5086
OT-23
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PDF
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2929 transistor
Abstract: MMBT6427 MMBTA14 SOT-23 J
Text: SAMSUNG SEMICONDUCTOR INC MMBTA14 14E D | 7^4142 OGt^eT! t | NPN EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage . Collector-Emitter Voltage Emitter-Base Voltage
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0075T1
MMBTA14
MMBT6427
T-29-29
OT-23
100jjA,
2929 transistor
SOT-23 J
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BA 92 SAMSUNG
Abstract: transistor BA 92 samsung transistor Ba 92 transistor samsung
Text: SAMSUNG SEMI CONDUCTOR INC MPS6651 IME D J 7^4145 0007334 T PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR •'Collector-feinJtterifoltág*: Vcto=25V. • CollectorDlssipatlon: Pc max =625mW ; ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic
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MPS6651
625mW
T-29-21
BA 92 SAMSUNG
transistor BA 92 samsung transistor
Ba 92 transistor samsung
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MMBA812M4 1I,E 0 | 7^4142 0007233 3 | PNP EPITAXIAL SILICON TRANSISTOR T - n -o q GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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OCR Scan
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MMBA812M4
MMBT5086
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MPS6522 D | 7*^4145 0007327 1 | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto =25V • Collector Dissipation: P c max =625mW A BSO LU TE MAXIMUM RATINGS (Ta=25°C) Characteristic
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OCR Scan
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MPS6522
T-29-21
625mW
2N3906
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PDF
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transistor
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR IM E O INC MPS29Ö7 7^4145 000730*1 T PNP EPITAXIAL SILICON TRANSISTOR — - :— “— . '• " ' > * T -29 -21 GENERAL PURPOSE TRANSISTOR • Collector-Emltter Voltage: Vcw=40V • Collector Dissipation: Pc (max >825mW
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MPS29
825mW
transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMI CONDUCTOR INC MPS4249 14E 0 ^ 7^4142 0007318 | PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Vc*o=60V • Collector Dissipation: Pc max =200mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Rating Sym b ol
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MPS4249
200mW
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PDF
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2N3906
Abstract: la 4142 MPS6523
Text: SAMSUNG SEMICONDUCT OR INC MPS6523 14E O 1 7^4142 0007356 3 PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto =25V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic
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MPS6523
625mW
T-29-21
2N3906
100KHz
10Kfl
10KHz
la 4142
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PDF
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2N5400
Abstract: 2N5401
Text: SAMSUN G SEM ICONDUCTOR INC 2N5400 14E D | 7^4142 G0D71fl4 J PNP EPITAXIAL SILICON TRANSISTOR f-29-21 AMPLIFIER TRANSISTOR • Collector-Base Voltage: VMo =120V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol
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2N5400
625mW
2N5401
100/iA,
10/jA,
100MHz
250AVce
10Hzto
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