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    TRANSISTOR 415 Search Results

    TRANSISTOR 415 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 415 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UD22K Preliminary DUAL TRANSISTOR DIGITAL TRANSISTOR BUILT-IN RESISTORS  DESCRIPTION The UTC UD22K is a dual transistor, including an NPN transistor and a PNP transistor.  FEATURES * Built-in bias resistors that implies easy ON/OFF applications.


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    UD22K UD22K UD22KG-AL6-R OT-363 QW-R221-020 PDF

    8054 transistor

    Abstract: TRANSISTOR 4847 AT-41500 s415 RF s415 TRANSISTOR c 5803 AT-41586 S21E chip die npn transistor AT41500
    Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be


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    AT-41500 AT-41500 AT-41500-GP4 045mm AV01-0077EN AV01-0438EN 8054 transistor TRANSISTOR 4847 s415 RF s415 TRANSISTOR c 5803 AT-41586 S21E chip die npn transistor AT41500 PDF

    AT41500

    Abstract: AT-41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586
    Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be


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    AT-41500 AT-41500 AT-41500-GP4 AV01-0077EN AT41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586 PDF

    AT-41500

    Abstract: TRANSISTOR zo 109 ma transistor zo 109 ZO 109 transistor at41500
    Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be


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    AT-41500 AT-41500 AT-41500-GP4 AV01-0077EN TRANSISTOR zo 109 ma transistor zo 109 ZO 109 transistor at41500 PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    NEC IC D 553 C

    Abstract: nec 2741 702 mini transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.


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    2SC4226 2SC4226 SC-70 2SG4226-T1 NEC IC D 553 C nec 2741 702 mini transistor PDF

    nec 2741

    Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.


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    2SC4226 2SC4226 SC-70 2SC4226-T1 nec 2741 2SC4226 datasheet 2SC4226-T1 2SC4226-T2 PDF

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTC6717MC ZXTDA1M832 MPPS Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A DESCRIPTION


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    ZXTC6717MC ZXTDA1M832 PDF

    822SD

    Abstract: 1K transistor
    Text: Hutton Close, Crowther Ind Est, Washington, Tyne & W ear NE38 0AH, England mailto:sales@isocom .uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 Optical Switches: Dual Transistor Output Optocouplers Catalogue Home Page 150 250 822S 822SD: Dual Transistor Output


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    822SD: 822SD ILD610 1K transistor PDF

    2SA1424

    Abstract: NEC 2532 276-137 2SA1978 2SC2351 NPN transistor mhz s-parameter 2sc2351 equivalent
    Text: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES High fT _0.2 2.8+ Equivalent NPN transistor is the 2SC2351. • Alternative of the 2SA1424. _0.2 2.9+ Symbol Rating Unit Collector to Base Voltage


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    2SA1978 2SC2351. 2SA1424. 2SA1424 NEC 2532 276-137 2SA1978 2SC2351 NPN transistor mhz s-parameter 2sc2351 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: Agilent AT-41586 Low Cost General Purpose Transistors Data Sheet Features The AT-41586 bipolar transistor is fabricated using Agilent’s 10 GHz fT Self-Aligned-Transistor SAT process. The die is nitride passivated for surface protection. 86 Plastic Package


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    AT-41586 AT41586 5965-8908E 5989-2651EN PDF

    TIC 122 Transistor

    Abstract: sot171 outline heatsink catalogue SOT171 BLV910 TIC 220 MLC663
    Text: Philips Semiconductors Product specification UHF power transistor BLV910 FEATURES DESCRIPTION • Internal input matching to achieve high power gain and easy design of wideband circuits NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is


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    BLV910 OT171 OT171 MBA45Ã OT171. 71ina2t TIC 122 Transistor sot171 outline heatsink catalogue SOT171 BLV910 TIC 220 MLC663 PDF

    4.702.119

    Abstract: 41532 AT-32032 AT-41532 AT-41532-BLK S21E AT-41532-TR1G marking R5* sc-70
    Text: AT-41532 General Purpose, Low Current NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-41532 is a general purpose NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery


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    AT-41532 AT-41532 OT-323 SC-70) 5965-6167EN 5989-2650EN 4.702.119 41532 AT-32032 AT-41532-BLK S21E AT-41532-TR1G marking R5* sc-70 PDF

    marking DA1

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTC6717MC ZXTDA1M832 MPPS Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A


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    ZXTC6717MC ZXTDA1M832 marking DA1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Qs.iis.ij ^Ss-mL-donductoi lArooucfi, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF416 *BF418 PNP SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR PNPSILICIUM, PLANAR EPITAXIAL Compl. of BF 415 and BF 417


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    BF416 BF418 -25mA) -250V -300V 70MHz O-126- CB-16 PDF

    at41535

    Abstract: AT-41535 NF50 S21E tc 3086
    Text: AT-41535 Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Description/Applications Features The AT-41535 of Avago Techologies is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41535 is house in a cost


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    AT-41535 AT-41535 AV01-0144EN AV02-1216EN at41535 NF50 S21E tc 3086 PDF

    AT-32032

    Abstract: AT-41532 AT-41532-BLK S21E s1225 AT41532TR1G marking R5* sc-70
    Text: Agilent AT-41532 General Purpose, Low Current NPN Silicon Bipolar Transistor Data Sheet Features Description Agilent’s AT-41532 is a general purpose NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use


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    AT-41532 AT-41532 OT-323 SC-70) SC-70 OT-323) 5965-6167E 5989-2650EN AT-32032 AT-41532-BLK S21E s1225 AT41532TR1G marking R5* sc-70 PDF

    8054 transistor

    Abstract: TRANSISTOR 4847 TRANSISTOR c 5803 s415 RF AT-41586 chip die npn transistor at41500 AT-41500
    Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter


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    AT-41500 AT-41500 AT-41500-GP4 045mm AV01-0438EN AV02-1844EN 8054 transistor TRANSISTOR 4847 TRANSISTOR c 5803 s415 RF AT-41586 chip die npn transistor at41500 PDF

    BUD43D2

    Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310
    Text: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally


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    BUD43D2 BUD43D2 BUD43D2: r14525 BUD43D2/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 PDF

    MTP8P10

    Abstract: MUR105 BUD43D2 MJE210 MPF930 MTP12N10
    Text: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally


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    BUD43D2 BUD43D2 BUD43D2: r14525 BUD43D2/D MTP8P10 MUR105 MJE210 MPF930 MTP12N10 PDF

    AT-41532

    Abstract: TRANSISTOR TT 2190 transistor ajw
    Text: AT-41532 General Purpose, Low Current NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-41532 is a general purpose NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery powered


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    AT-41532 AT-41532 OT-323 SC-70) MGA-81563 5989-2650EN AV02-1964EN TRANSISTOR TT 2190 transistor ajw PDF

    npn transistor 400 volts.10 amperes

    Abstract: No abstract text available
    Text: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally


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    BUD43D2 BUD43D2: r14525 BUD43D2/D npn transistor 400 volts.10 amperes PDF

    2SC4571

    Abstract: 2SC4571-T1 2SC4571-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the


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    2SC4571 2SC4571 SC-70) 2SC4571-T1 2SC4571-T1 2SC4571-T2 PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 60A Peak Avalanche Current Pulse width = 20ns BVCES > 260V (415) & 320V (417) • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound


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    FMMT415 FMMT417 AEC-Q101 J-STD-020 FMMT415-FMMT417 DS33084 PDF