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    TRANSISTOR 45 P3 Search Results

    TRANSISTOR 45 P3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 45 P3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AGR19045XF

    Abstract: No abstract text available
    Text: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19045EF Hz--1990 AGR19045XF

    CDM 03

    Abstract: AGR19045EF AGR19045XF CDR33BX104AKWS JESD22-C101A
    Text: AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19045EF Hz--1990 AGR19045EF carGR19045EF AGR19045XF 21045F 12-digit CDM 03 AGR19045XF CDR33BX104AKWS JESD22-C101A

    6603 Shenzhen

    Abstract: AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor
    Text: Preliminary Data Sheet April 2004 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19045E Hz--1990 AGR19045E DS04-077RFPP DS02-378RFPP) 6603 Shenzhen AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor

    J600 transistor

    Abstract: No abstract text available
    Text: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19045EF Hz--1990 DS04-240RFPP DS04-077RFPP) J600 transistor

    j306 TRANSISTOR equivalent

    Abstract: transistor J306 zl 04 FET j306
    Text: Preliminary Data Sheet November 2003 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19045E Hz--1990 AGR19045EU AGR19045EF DS02-378RFPP j306 TRANSISTOR equivalent transistor J306 zl 04 FET j306

    j306 TRANSISTOR equivalent

    Abstract: transistor J306 AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor z14 L
    Text: Preliminary Data Sheet November 2003 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original     		PDF AGR19045E Hz--1990 AGR19045E AGR19045EU AGR19045EF DS02-378RFPP j306 TRANSISTOR equivalent transistor J306 AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor z14 L

    210451

    Abstract: smd marking f2 smd transistor marking l6 BDS31314 PTF210451 PTF210451E
    Text: PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description Features The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF210451 PTF210451 210451 smd marking f2 smd transistor marking l6 BDS31314 PTF210451E

    rogers

    Abstract: No abstract text available
    Text: PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description Features The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF210451 PTF210451 rogers

    Transistor J550

    Abstract: j584 transistor
    Text: Document Number: AFT26H200W03S Rev. 0, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT26H200W03S AFT26H200W03SR6 Transistor J550 j584 transistor

    j292

    Abstract: aft23h200-4s2l
    Text: Document Number: AFT23H200−4S2L Rev. 1, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET AFT23H200−4S2LR6 This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of


    Original     		PDF AFT23H200-4S2L AFT23H200-4S2LR6 j292

    TRANSISTOR J477

    Abstract: J890
    Text: Document Number: AFT23S170−13S Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.


    Original     		PDF AFT23S170â 13SR3 TRANSISTOR J477 J890

    CGH40045F

    Abstract: CGH40045 10UF cree L2
    Text: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40045 CGH40045 CGH40045, CGH4004 CGH40045F 10UF cree L2

    93420

    Abstract: cgh40045f CGH40045 30579 74139 10UF 33UF 002132 FERRITE-220 transistor 15478
    Text: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40045 CGH40045 CGH40045, CGH4004 93420 cgh40045f 30579 74139 10UF 33UF 002132 FERRITE-220 transistor 15478

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40045 CGH40045 CGH40045, CGH4004

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40045 CGH40045 CGH40045, CGH4004

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor RT243 Product Features Application • Frequency Range = 50MHz ~ 4GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 45dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 16dB(Typ.)@900MHz G1dB = 12dB(Typ.)@2.14GHz


    Original     		PDF RT243 50MHz 43dBm 14GHz 45dBm 900MHz IMT-2000 WP-12

    V23990-P305-B-PM

    Abstract: tyco igbt V23990-P305-B
    Text: datasheet version 06/01 V23990-P305-B-PM flow PIM 1+P; 600V Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung


    Original     		PDF V23990-P305-B-PM D81359 V23990-P305-B-PM tyco igbt V23990-P305-B

    GSM repeater circuit using transistor

    Abstract: No abstract text available
    Text: Power Transistor RT243 Product Features Application • Frequency Range = 50MHz ~ 4GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 45dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 16dB(Typ.)@900MHz G1dB = 12dB(Typ.)@2.14GHz


    Original     		PDF RT243 50MHz 43dBm 14GHz 45dBm 900MHz IMT-2000 WP-12 GSM repeater circuit using transistor

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor RT233 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 20dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.5GHz


    Original     		PDF RT233 50MHz 33dBm 36dBm 900MHz IMT-2000 WP-22 RT233 IMT-2000,

    V23990-P303-B-PM

    Abstract: TRANSISTOR 1P P303 tyco igbt tyco igbt 6a igbt tyco
    Text: datasheet version 06/01 V23990-P303-B-PM flow PIM 1+P; 600V Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung


    Original     		PDF V23990-P303-B-PM D81359 V23990-P303-B-PM TRANSISTOR 1P P303 tyco igbt tyco igbt 6a igbt tyco

    GSM repeater circuit using transistor

    Abstract: No abstract text available
    Text: Power Transistor RT233 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 20dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.5GHz


    Original     		PDF RT233 50MHz 33dBm 36dBm 900MHz IMT-2000 WP-22 RT233 IMT-2000, GSM repeater circuit using transistor

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1145 2 S A 1 1 45 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS. 5.1 MAX • • • Complementary to 2SC2705. Small Collector Output Capacitance : C0b = 2.5pF (Typ.) High Transition Frequency


    OCR Scan     		PDF 2SA1145 2SC2705. 200MHz O-92MOD -150V

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2S K 2 1 4 5 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 2 1 45 AUDIO FREQUENCY LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm + 0.2 2.8-0.3 • Including Two Devices in SM5 Super Mini Type with 5 Leads. . High |Yfc| •


    OCR Scan     		PDF

    SMW45N10

    Abstract: 37392 A2631 NS6040
    Text: Tem ic SMW45N10 Siliconix N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) ( ß ) I d {A) 100 0.040 45 T O -247AD I o G D S N -C h an n el M O S F E T Top View Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) Parameter


    OCR Scan     		PDF SMW45N10 -247AD r392-- P-37392--Rev. SMW45N10 37392 A2631 NS6040