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    TRANSISTOR 5B Search Results

    TRANSISTOR 5B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 5B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    BFG135 amplifier

    Abstract: BFG135 BFG135 - BFG135 MBB300
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor


    Original     		PDF BFG135 OT223 CGY2020G SCA50 647021/1200/01/pp12 BFG135 amplifier BFG135 BFG135 - BFG135 MBB300

    BFR540

    Abstract: MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1995 September 1999 Aug 23 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFR540 The transistor is encapsulated in a


    Original     		PDF BFR540 BFR540 125006/03/pp16 MSB003

    5B smd transistor data

    Abstract: smd transistor marking 5B 5B SMD TRANSISTOR smd transistor 5B CMBT4123
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT4123 GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking CMBT4123 = 5B PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE


    Original     		PDF ISO/TS16949 OT-23 CMBT4123 C-120 5B smd transistor data smd transistor marking 5B 5B SMD TRANSISTOR smd transistor 5B CMBT4123

    BFG35

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor


    Original     		PDF BFG35 OT223 MSB002 OT223. 125006/03/pp16 BFG35

    BFG198

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a


    Original     		PDF BFG198 OT223 MSB002 OT223. CGY2020G SCA50 647021/1200/01/pp12 BFG198

    5B smd transistor data

    Abstract: 5B SMD TRANSISTOR smd transistor 5B CMBT4123
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4123 GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking CMBT4123 = 5B PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF OT-23 CMBT4123 C-120 5B smd transistor data 5B SMD TRANSISTOR smd transistor 5B CMBT4123

    BUJ103AX

    Abstract: BP317 BU1706AX
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended


    Original     		PDF BUJ103AX SCA60 135104/240/02/pp12 BUJ103AX BP317 BU1706AX

    BP317

    Abstract: BU1706AX BUJ204AX
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended


    Original     		PDF BUJ204AX SCA60 135104/204/02/pp12 BP317 BU1706AX BUJ204AX

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use


    Original     		PDF BUJ103A O220AB SCA60 135104/240/02/pp12

    BUJ204A

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for


    Original     		PDF BUJ204A O220AB SCA60 135104/240/02/pp12 BUJ204A

    str 6707

    Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 14 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package.


    Original     		PDF M3D067 BF859 O-202 MBH794 O-202) SCA63 115002/00/03/pp8 str 6707 philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202

    marking 5B

    Abstract: No abstract text available
    Text: BC807 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BC807-25 5B BC807-40 5C SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS


    Original     		PDF BC807 BC807-25 BC807-40 OT-23 BC817 OT-23 marking 5B

    transistor bfr96

    Abstract: BFR96 BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 BFR96 TRANSISTOR BFR961 RF TRANSISTOR 1.5 GHZ BFR96 motorola
    Text: MOTOROLA Order this document by BFR96/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state–of–the–art microwave transistor chip which features fine–line geometry, ion–implanted arsenic emitters and gold


    Original     		PDF BFR96/D BFR96 BFR96 BFR96/D* DEVICEBFR96/D transistor bfr96 BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 BFR96 TRANSISTOR BFR961 RF TRANSISTOR 1.5 GHZ BFR96 motorola

    5B smd transistor data

    Abstract: transistor marking SA p sot-23 5B SMD TRANSISTOR smd transistor 5B smd transistor 5b sot-23 5b transistor smd ts 4141 TRANSISTOR smd smd transistor marking 5b transistor smd 5B SA SOT-23
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4123 GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking CMBT4123 = 5B Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS


    Original     		PDF OT-23 CMBT4123 C-120 5B smd transistor data transistor marking SA p sot-23 5B SMD TRANSISTOR smd transistor 5B smd transistor 5b sot-23 5b transistor smd ts 4141 TRANSISTOR smd smd transistor marking 5b transistor smd 5B SA SOT-23

    BFW17A

    Abstract: bfw17a philips semiconductor lem HA
    Text: NPN 1 GHz wideband transistor 5bE T> m PHI! IPS INTERNATIONAL DESCRIPTION ^ '" ^ 3 3 BFW17A 711Dfl2b GOMbOEB Mfc.3 « P H I N PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case. The transistor has extremely good


    OCR Scan     		PDF BFW17A 711Dfl2b D04fc 0D4b025 BFW17A bfw17a philips semiconductor lem HA

    SQD65BB75

    Abstract: sqd65B
    Text: TRANSISTOR M O D U L E non -ISOLATED TYPE SQP65BB75 S Q D 6 5B B is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • VCbo= 750V, lc = 65A • Suitable for Resonance circuit applications.


    OCR Scan     		PDF SQP65BB75 SQD65BB75 00DEE22 SQD65BB75 sqd65B

    TRANSISTOR ph 618

    Abstract: transistor 911 TRANSISTOR 618 BFQ33C 1383 transistor BFQ33 transistor 1005 2G
    Text: Philips Semiconductors Product specification BFQ33C NPN 12 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE ]> 711DÔ5t. G0H543T 5b7 • P H I N PINNING NPN transistor in hermetically-sealed, sub-miniature, SOT173 and SOT173X micro-stripline envelopes, primarily


    OCR Scan     		PDF OT173 OT173X BFQ33C G0H543T figure076 711DfiEfci TRANSISTOR ph 618 transistor 911 TRANSISTOR 618 BFQ33C 1383 transistor BFQ33 transistor 1005 2G

    BFQ108

    Abstract: BFQ10 SOT122A 45005B
    Text: Philips Sem iconductors Product specification - PNP 4 GHz wideband transistor pHILIPS INTERNATIONAL DESCRIPTION 5bE ]> 3 3 -/7 BFQ108 711GÖEb DD4S5S3 fllfl • PHIN PINNING The BFQ108 is a high output voltage PNP transistor in a SOT122A envelope, primarily Intended for use


    OCR Scan     		PDF BFQ108 711Gfl2b BFQ108 OT122A 45005B) BFQ10 SOT122A 45005B

    Untitled

    Abstract: No abstract text available
    Text: -T~35>~OS MSB11900Y M AINTENANC E TYPE PHILIPS i n t e r n a t i o n a l 5bE D • 7110aEb ÜDMbBBß b37 H P H I N - PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor tw o transistor sections intended fo r use in m ilitary and professional applications. It operates only in pulsed conditions and is recommended fo r IFF applications at 1.0 9MHz.


    OCR Scan     		PDF MSB11900Y 7110aEb 2x1000

    TRansistor L 701

    Abstract: vmk 5 pin BUK995-60A
    Text: Philips Components Data sheet Preliminary specif ication status date of issue March 1991 9 0 BUK995-60A PowerMOS transistor Logic Level SensorFET 5bE D PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode logic level field-effect power transistor in a 5 pin plastic


    OCR Scan     		PDF OT263 BUK995-60A 004M7b5 TRansistor L 701 vmk 5 pin BUK995-60A

    BFR96

    Abstract: BFR96 philips Transistor 933 Transistor s44 transistor bfr96 transistorbfr96
    Text: Philips Semiconductors Product specification - 3 /- . Z 3 NPN 5 GHz wideband transistor DESCRIPTION 711002b 004577b 1A7 • P H I N 5bE D PHILIPS INTERNATIONAL BFR96 PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as


    OCR Scan     		PDF ON4487) BFQ32. BFR96 711DflSb r-31-23 711Dfl2b BFR96 BFR96 philips Transistor 933 Transistor s44 transistor bfr96 transistorbfr96

    2322-712

    Abstract: BFG134 LC 3524 philips resistor 2322 763 2222 372 TAG 453 665 800 2222 379 2322 712 fr 253/30 r h a 431 transistor
    Text: Product specification Philips Semiconductors T ^ 3 3 -a s NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION BFG134 VllOBSb □04S20l4 4ôb M P H I N 5bE D PINNING NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for


    OCR Scan     		PDF OT103 33-OS BFG134 Q04S2014 OT103. 2322-712 BFG134 LC 3524 philips resistor 2322 763 2222 372 TAG 453 665 800 2222 379 2322 712 fr 253/30 r h a 431 transistor

    BFQ268

    Abstract: No abstract text available
    Text: Philips Semiconductors_ ,—. 7^ 3 3 - 0 5 - NPN 1 GHz video transistor PH ILIPS INTERNATIONAL DESCRIPTION Product specification - BFQ268; BFQ268/1 5bE D • 7 1 1 D flP b OOMShS? 344 « P H I N PINNING NPN silicon epitaxial transistor with


    OCR Scan     		PDF BFQ268; BFQ268/1 711002t) BFQ268 OT172A1) BFQ268/I OT172A3 BFQ268/I 004SbbD