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    TRANSISTOR 9013 Search Results

    TRANSISTOR 9013 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 9013 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor BR 9013

    Abstract: transistor c 9013 transistor 9013 NPN 9013 s 9013 h PNP 9013 9013 transistor BR 9012 c 9013 g 9013 npn transistor
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    50MHz transistor BR 9013 transistor c 9013 transistor 9013 NPN 9013 s 9013 h PNP 9013 9013 transistor BR 9012 c 9013 g 9013 npn transistor PDF

    transistor BR 9013

    Abstract: BR 9013 transistor 9012 data sheet NPN 9013 9013 transistor 9013 npn transistor datasheet transistor 9013 data sheet transistor 9012 transistor c 9013 9013 npn
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    transistor BR 9013

    Abstract: transistor c 9013 transistor 9013 9013 transistor BR 9013 9013 pnp NPN 9013 9013 NPN Transistor Transistor-9013 h 9013 NPN Output Transistor
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    50MHz transistor BR 9013 transistor c 9013 transistor 9013 9013 transistor BR 9013 9013 pnp NPN 9013 9013 NPN Transistor Transistor-9013 h 9013 NPN Output Transistor PDF

    transistor c 9013

    Abstract: transistor BR 9013 NPN 9013 9013 transistor transistor 9013 BR 9013 9013 npn transistor 9013 pnp pin configuration NPN transistor 9013 npn 9013
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    50MHz transistor c 9013 transistor BR 9013 NPN 9013 9013 transistor transistor 9013 BR 9013 9013 npn transistor 9013 pnp pin configuration NPN transistor 9013 npn 9013 PDF

    NPN 9013

    Abstract: transistor BR 9013 pin configuration NPN transistor 9013 npn 9013 npn transistor 9013 transistor pin configuration NPN transistor 9012 PNP 9013 NPN transistor c 9013 9013 pnp data sheet NPN 9013
    Text: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    50MHz NPN 9013 transistor BR 9013 pin configuration NPN transistor 9013 npn 9013 npn transistor 9013 transistor pin configuration NPN transistor 9012 PNP 9013 NPN transistor c 9013 9013 pnp data sheet NPN 9013 PDF

    SMD transistor MARKING CODE 43

    Abstract: TRANSISTOR SMD MARKING CODE A1 TRANSISTOR SMD MARKING CODE 42 SMD Transistor A1 TC114E smd TRANSISTOR code marking 36 smd TRANSISTOR code marking 013 Transistor SMD marking code NV smd transistor 023 TRANSISTOR SMD MARKING CODE X D
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC114E series NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Product specification Supersedes data of 1999 May 31 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistor;


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    PDTC114E resistor-equipPDTC114EE PDTC114EU PDTC114EEF SMD transistor MARKING CODE 43 TRANSISTOR SMD MARKING CODE A1 TRANSISTOR SMD MARKING CODE 42 SMD Transistor A1 TC114E smd TRANSISTOR code marking 36 smd TRANSISTOR code marking 013 Transistor SMD marking code NV smd transistor 023 TRANSISTOR SMD MARKING CODE X D PDF

    transistor c 9012

    Abstract: PNP 9012 9012 transistor 9012 9013 NPN 9012 9012 pnp 9012 transistor br 9012 9012 pnp transistor 9013 transistor pnp
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    20MHz transistor c 9012 PNP 9012 9012 transistor 9012 9013 NPN 9012 9012 pnp 9012 transistor br 9012 9012 pnp transistor 9013 transistor pnp PDF

    Transistor-9013 h

    Abstract: Transistor 9013 transistor BR 9013 9012 pnp data sheet transistor 9012 transistor c 9012 PNP 9012 data sheet NPN 9013 Transistor 9012 G 9013 transistor
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    transistor c 9012

    Abstract: PNP 9012 9012 br 9012 transistor 9012 9013 NPN 9012 transistor npn c 9013 9012 pnp 9012 transistor transistor 9013 H NPN
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    20MHz transistor c 9012 PNP 9012 9012 br 9012 transistor 9012 9013 NPN 9012 transistor npn c 9013 9012 pnp 9012 transistor transistor 9013 H NPN PDF

    transistor c 9012

    Abstract: PNP 9012 BR 9012 9012 transistor 9012 pnp transistor transistor 9012 9013 NPN 9012 9012 Transistor 9012 G transistor s 9012
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    20MHz transistor c 9012 PNP 9012 BR 9012 9012 transistor 9012 pnp transistor transistor 9012 9013 NPN 9012 9012 Transistor 9012 G transistor s 9012 PDF

    transistor c 9012

    Abstract: PNP 9012 9012 pnp transistor 9012 9013 9012 transistor BR 9013 Transistor 9012 G NPN 9012 BR 9012 9012 transistor
    Text: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As


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    20MHz transistor c 9012 PNP 9012 9012 pnp transistor 9012 9013 9012 transistor BR 9013 Transistor 9012 G NPN 9012 BR 9012 9012 transistor PDF

    MMBTH10

    Abstract: MMBTH10G sot-23 Marking YRE MMBTH10L
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTH10 NPN SILICON TRANSISTOR RF TRANSISTOR „ DESCRIPTION The UTC MMBTH10 is designed for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. Lead-free: MMBTH10L Halogen-free: MMBTH10G „ ORDERING INFORMATION


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    MMBTH10 MMBTH10 MMBTH10L MMBTH10G MMBTH10-x-AE3-R MMBTH10L-x-AE3-R MMBTH10G-x-AE3-R MMBTH10-x-AL3-R MMBTH10L-x-AL3-R MMBTH10G-x-AL3-R MMBTH10G sot-23 Marking YRE MMBTH10L PDF

    MMBTH10

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTH10 NPN SILICON TRANSISTOR RF TRANSISTOR „ DESCRIPTION The UTC MMBTH10 is designed for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. „ ORDERING INFORMATION Ordering Number Normal Lead Free Plating


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    MMBTH10 MMBTH10 MMBTH10-x-AE3-R MMBTH10L-x-AE3-R MMBTH10G-x-AE3-R MMBTH10-x-AL3-R MMBTH10L-x-AL3-R MMBTH10G-x-AL3-R MMBTH10-x-AN3-R MMBTH10L-x-AN3-R PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSH10A NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR „ DESCRIPTION The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 „ ORDERING INFORMATION Ordering Number


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    MPSH10A MPSH10A MPSH10A-x-T92-B MPSH10AL-x-T92-B MPSH10AG-x-T92-B MPSH10A-x-T92-K MPSH10AL-x-T92-K MPSH10AG-x-T92-K QW-R201-065 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSH10A NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR  DESCRIPTION The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92  ORDERING INFORMATION Ordering Number


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    MPSH10A MPSH10A MPSH10AL-x-T92-B MPSH10AG-x-T92-B MPSH10AL-x-T92-K MPSH10AG-x-T92-K QW-R201-065 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR  DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92  ORDERING INFORMATION Ordering Number


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    MPSH10 MPSH10 MPSH10L-x-T92-B MPSH10G-x-T92-B MPSH10L-x-T92-K MPSH10G-x-T92-K QW-R201-022 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTH10 NPN SILICON TRANSISTOR RF TRANSISTOR „ DESCRIPTION The UTC MMBTH10 is designed for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. „ ORDERING INFORMATION Ordering Number Lead Free Plating


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    MMBTH10 MMBTH10 MMBTH10L-x-AE3-R MMBTH10G-x-AE3-R MMBTH10L-x-AL3-R MMBTH10G-x-AL3-R MMBTH10L-x-AN3-R MMBTH10G-x-AN3-R MMBTH10L-x-AQ3-R MMBTH10G-x-AQ3-R PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTH10 NPN SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION  The UTC MMBTH10 is designed for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver.  ORDERING INFORMATION Ordering Number Note:  MMBTH10G-x-AE3-R


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    MMBTH10 MMBTH10 MMBTH10G-x-AE3-R MMBTH10G-x-AL3-R MMBTH10G-x-AN3-R MMBTH10G-x-AQ3-R OT-23 OT-323 OT-523 OT-723 PDF

    transistor BR 9013

    Abstract: NPN 9013 transistor c 9013 9013 npn transistor br 9013 transistor 9012 9013 9013 transistor Transistor 9013 9013 pnp transistor npn c 9013
    Text: HN 9013 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, G and H, according to its DC current gain. As complementary type


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    diode st 4148

    Abstract: ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148 1N4001-1N4007
    Text: TRANSISTOR & DIODE Transistor -S T 8050 - 1.5A TO-92 - ST 8050 (TO-92) - ST 8550 - 1.5A (TO-92) - ST 8550 (TO-92) - ST 9011 (TO-92) - ST 9012 (TO-92) - ST 9013 (TO-92) - ST 9014 (TO-92 -S T 9015 (TO-92) - ST 9016 (TO-92) -S T 9018 (TO-92) o - MMBT8050LT1 -1.5A (SOT-23)


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    MMBT8050LT1 OT-23) -LL4001-LL4007 -LL4148 1N4001-1N4007 diode st 4148 ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    9011 9012 9013 9014 9018

    Abstract: 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015
    Text: 'ty i / >; •i CL9000 i ÎÏ t it -V, 1'* r-t, *i *Vj 1t E i SERIES AM FM RADIO TRANSISTOR KIT G U ID E SELECTION FOR AM / FM RADIO TRANSISTOR KIT Output AM R EC EIV ER? Y _ son IF2 IF1 Conv. H 90 H 9012 AF Amp. 9014 M 90U SP. or <1 :9015 9013 Output FM R EC EIV ER


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    CL9000 T0-92B 10kfi 9011 9012 9013 9014 9018 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    PNP 9012

    Abstract: transistor BR 9013 9012 pnp 9012 pnp transistor 9012 transistor transistor BR 9012 NPN 9012 br 9012 9012 9012 npn
    Text: HN 9012 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, G and H, according to its DC current gain. As complementary type


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    103mA PNP 9012 transistor BR 9013 9012 pnp 9012 pnp transistor 9012 transistor transistor BR 9012 NPN 9012 br 9012 9012 9012 npn PDF