TRANSISTOR BI 187
Abstract: SGA-4586
Text: Preliminary Product Description SGA-4586 Stanford Microdevices SGA-4586 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-4586
SGA-4586
50-ohm
DC-4000
EDS-101266
TRANSISTOR BI 187
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marking A45
Abstract: germanium transistor ac 128 SGA-4563 marking A45 RF TRANSISTOR 726
Text: Preliminary Preliminary Product Description SGA-4563 Stanford Microdevices SGA-4563 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.4V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-4563
SGA-4563
50-ohm
DC-2500
EDS-101803
marking A45
germanium transistor ac 128
marking A45 RF
TRANSISTOR 726
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transistor 123 DL
Abstract: TRANSISTOR 8FB a406 transistor A7N transistor
Text: AOL1444 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1444 uses advanced trench technology to provide excellent R DS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power
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AOL1444
AOL1444
DDD50%
transistor 123 DL
TRANSISTOR 8FB
a406 transistor
A7N transistor
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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A45-1
Abstract: CA45-1 SMA45-1 RF FET TRANSISTOR 3 GHZ TRANSISTOR a45
Text: A45-1/SMA45-1 1000 TO 4000 MHz CASCADABLE AMPLIFIER • WIDE BANDWIDTH · HIGH GAIN 17.5 dB TYP. · LOW NOISE: 4.1 dB (TYP.) · GaAs FET DESIGN Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics Typical Frequency Small Signal Gain (min.)
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A45-1/SMA45-1
A45-1
SMA45-1
CA45-1
A45-1
CA45-1
SMA45-1
RF FET TRANSISTOR 3 GHZ
TRANSISTOR a45
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TRANSISTOR a45
Abstract: No abstract text available
Text: A45/SMA45 1000 TO 4000 MHz CASCADABLE AMPLIFIER • HIGH GAIN: 17.5 dB TYP. · LOW NOISE: 4.5 dB (TYP.) · HIGH OUTPUT POWER: +19.5 dBm (TYP.) · GaAs FET DESIGN Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics Typical Frequency
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A45/SMA45
50-ohm
TRANSISTOR a45
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TRANSISTOR a45
Abstract: No abstract text available
Text: A45/SMA45 1000 TO 4000 MHz CASCADABLE AMPLIFIER • HIGH GAIN: 17.5 dB TYP. · LOW NOISE: 4.5 dB (TYP.) · HIGH OUTPUT POWER: +19.5 dBm (TYP.) · GaAs FET DESIGN Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics Typical Frequency
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A45/SMA45
SMA45
TRANSISTOR a45
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CA45
Abstract: SMA45 TRANSISTOR a45 BGA45
Text: A45/SMA45 1000 TO 4000 MHz CASCADABLE AMPLIFIER • HIGH GAIN: 17.5 dB TYP. · LOW NOISE: 4.5 dB (TYP.) · HIGH OUTPUT POWER: +19.5 dBm (TYP.) · GaAs FET DESIGN Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics Typical Frequency
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A45/SMA45
SMA45
CA45
SMA45
TRANSISTOR a45
BGA45
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TRANSISTOR a45
Abstract: No abstract text available
Text: A45-1/SMA45-1 1000 TO 4000 MHz CASCADABLE AMPLIFIER • WIDE BANDWIDTH · HIGH GAIN 17.5 dB TYP. · LOW NOISE: 4.1 dB (TYP.) · GaAs FET DESIGN Typical Performance @ 25°C Specifications (Rev. Date: 6/01)* Characteristics Typical Frequency Small Signal Gain (min.)
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A45-1/SMA45-1
A45-1
SMA45-1
CA45-1
TRANSISTOR a45
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TRANSISTOR a45
Abstract: No abstract text available
Text: Cascadable Amplifier 1000 to 4000 MHz A45/ SMA45 V3 Features • • • • Product Image HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.5 dB (TYP.) HIGH OUTPUT POWER: +19.5 dBm (TYP.) GaAs FET DESIGN Description The A45 RF amplifier is a discrete hybrid design, which uses
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SMA45
MIL-STD-883
SMA45
TRANSISTOR a45
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TRANSISTOR a45
Abstract: No abstract text available
Text: Cascadable Amplifier 1000 to 4000 MHz A45-1/ SMA45-1 V3 Features • • • • Product Image WIDE BANDWIDTH HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.1 dB (TYP.) GaAs FET DESIGN Description The A45-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance
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A45-1/
SMA45-1
A45-1
MIL-STD-883
SMA45-1
CA45-1
TRANSISTOR a45
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CA45
Abstract: SMA45 TRANSISTOR a45
Text: A45 / SMA45 Cascadable Amplifier 1000 to 4000 MHz Rev. V3 Features • • • • Product Image HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.5 dB (TYP.) HIGH OUTPUT POWER: +19.5 dBm (TYP.) GaAs FET DESIGN Description The A45 RF amplifier is a discrete hybrid design, which uses
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SMA45
MIL-STD-883
CA45
SMA45
TRANSISTOR a45
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SMA45
Abstract: A45-1 CA45-1 SMA45-1 TRANSISTOR a45
Text: A45-1 / SMA45-1 Cascadable Amplifier 1000 to 4000 MHz Rev. V3 Features • • • • Product Image WIDE BANDWIDTH HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.1 dB (TYP.) GaAs FET DESIGN Description The A45-1 RF amplifier is a discrete hybrid design, which uses
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A45-1
SMA45-1
MIL-STD-883
A45-1
SMA45
CA45-1
SMA45-1
TRANSISTOR a45
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE SQP400AA120 S Q D 4 0 0 A A 1 2 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for
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SQP400AA120
a400A
00020m
SQD400AA120
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Untitled
Abstract: No abstract text available
Text: 131,072 WORDS X 8 BIT CMOS PRELIMINARY PSEUDO STATIC RAM DESCRIPTION The TC518128A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518128A-LV Family utilizing one transistor dynamic memory’ cell with CMOS
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TC518128A-LV
TC518128A
-10LV,
-12LV
18128A
L-80LV
L-10LV
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A45A
Abstract: SO402 2SK386 j2f3 16664
Text: TOSHIBA -CDISCRETE/OPTOJ- ‘H 9097250 TOSHIBA <DISCRETE/OPTO> DE 99D SEMICONDUCTOR I SOTTESO OOlbbba 2 16662 DT_3CH3 TOSHIBA FIELD EFFECT TRANSISTOR 2SK386 SILICON N CHANNEL MOS TYPE TECHNICAL DATA <7T — M O S INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.
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100nA
A45A
SO402
2SK386
j2f3
16664
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP -r-3 3 2SC3292 2 01 OA NPN Planar Silicon Darlington Transistor Driver Applications i 1332A Use: Especially suited for use in switching of L load motor driver, printer hammer driver, relay driver, etc. Features: • High DC current gain
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2SC3292
tem250
ODCm343
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A45A
Abstract: CEN-A45A CEN-A44 CEN-A45 MPS-A44 MPS-A45 TRANSISTOR A44 TRANSISTOR a45 MPSA44
Text: CENTRAL nflnb3 oooD3t.a i i ,-p a s - a s SEMICONDUCTOR CEN-A44 CEN-A45 c e n -a 4s a @5{?^L£^¡iíe^e@9e esEsieEñgaB NPN SILICON TRANSISTOR . 'HIGH VOLTAGE € @ g it r ü i JEDEC TO-92 CASE EBC 1 4 5 A d a m s A ve n u e H auppauge, N e w Y o rk 1 1 7 8 8
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cen-a44
cen-a45
cen-a45a
to-92
CEN-A44,
EN-A45
CEN-A45A
MPS-A44,
MPS-A45
100mA
A45A
MPS-A44
TRANSISTOR A44
TRANSISTOR a45
MPSA44
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Untitled
Abstract: No abstract text available
Text: BSS98 In fin e o n t*ehnoiogi*i SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.1.6 V Type Vbs BSS98 50 V Type BSS98 BSS98 BSS98 Ordering Code Q62702-S053 Q62702-S517 Q62702-S635 0.3 A °DS(on) Package
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BSS98
Q62702-S053
Q62702-S517
Q62702-S635
E6288
E6296
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Untitled
Abstract: No abstract text available
Text: N AMER P H ILIP S /D IS C R E T E b'lE T> • bbSB'iai D0Sfl7ST B7T » A P X rm n p o rro u u m s p w m w u u n BLT81 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures
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BLT81
OT223
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2SK150
Abstract: 2SK12 2SK15 transistor 2sk 2SK120 2SK11 2SK12-Y 2SK150 A 2SK110 SK 10 BAT 065
Text: 2 5 ,1 1 5 ' tJ n y n * v % i \ > m 8 i e w i m m ^ y v z & SILICON N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR 2 5 ,1 2 - i 2 S K 15 ii it x o is « « « « * o 1 O D C , A C S S A * S !ttlE l« iffl O O ^ O X -1 7 f- •/
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2SK15)
2SK11)
2SK12,
3800iiu
3800/tU
2SK12
3SK15
2SK12)
10kfl)
2SK150
2SK12
2SK15
transistor 2sk
2SK120
2SK11
2SK12-Y
2SK150 A
2SK110
SK 10 BAT 065
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2SK19
Abstract: transistor 2sk19 2SK19BL 2SK19-BL transistor 2sk 70 transistor 2sk 220O OAT 3Z transistor kt 301
Text: 19 2SK o vv * O V H P fci*« « o PM T u n e r ^ IL I C O N N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR +m » - a n d VHP A m p l i f i e r U n it A p p lic a tio n s . * 5 .8 MAX. W iJiU i9 ^ *S ^ > „ i S 3 ^ A t J - f >" ^ : i Ops = ! W * - * s 20dB (T y p . (f= 1 0 0 M H z )
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l00MHz)
a45pP
2SK19
transistor 2sk19
2SK19BL
2SK19-BL
transistor 2sk 70
transistor 2sk
220O
OAT 3Z
transistor kt 301
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WJ-CA45-1
Abstract: WJ-CA45 wja45 wj-a45
Text: WJ-A45-1 / SMA45-1 1 to 4 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.1 dB (TYP.) GaAs FET DESIGN Outline Drawings A 45-1 Specifications" Characteristics 0.200 (5.08) Guaranteed
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WJ-A45-1
SMA45-1
WJ-CA45-1
WJ-CA45
wja45
wj-a45
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bc 149 transistor
Abstract: atic 144 WJ-CA45-1
Text: u j J A45-1 / SMA45-1 1 to 4 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.1 dB (TYP.) GaAs FET DESIGN llllillil Outline Drawings A 4 5 -1 0.460 n (11.41) ü Specifications11
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A45-1
SMA45-1
1-800-WJ1
bc 149 transistor
atic 144
WJ-CA45-1
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