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    TRANSISTOR B A O 33 ST Search Results

    TRANSISTOR B A O 33 ST Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B A O 33 ST Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    cs1w-cn226

    Abstract: OMRON PRO27 programming console omron sysmac cpm1 technical data nt2s-cn222-v1 OMRON PRO27 Operation Manual OMRON E5AF CPM2C-32CDTC-D pro27 OMRON Operation Manual CPM2C-32CDTM-D NT-CN221
    Text: Compact PLC Series CPM2C Programmable Logic Contr. General The CPM2C Micro PLC is suitable as a controller for simple stand−alone machines, as well as a simple networked controller. One innovation is the new synchronisation instruction, which makes it possible to generate output pulse trains as a function of an input pulse


    Original     		space/6000 TS001 TS101 Pt100 Pt100, JPt100 SRT21 cs1w-cn226 OMRON PRO27 programming console omron sysmac cpm1 technical data nt2s-cn222-v1 OMRON PRO27 Operation Manual OMRON E5AF CPM2C-32CDTC-D pro27 OMRON Operation Manual CPM2C-32CDTM-D NT-CN221 PDF

    BLY90

    Abstract: Wf VQE 23 F WE VQE 23 E wf vqe 23 WF VQE 11 E WF VQE 23 E WE VQE 11 E IEC134 philips Trimmer 60 pf WF VQE 23 D
    Text: PHILIPS INTERNATIONAL 41E ]> • 711002b 0 0 2 7 ^ A b «PHIN BLY90 T-33-13 V.H.F. POWER TRANSISTOR - N-P-N epitaxial planar transistor intended for use in class-A, 8 and C operated mobile, industrial and military transmitters witlr a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran­


    OCR Scan     		711002b BLY90 T-33-13 7z67566 BLY90 Wf VQE 23 F WE VQE 23 E wf vqe 23 WF VQE 11 E WF VQE 23 E WE VQE 11 E IEC134 philips Trimmer 60 pf WF VQE 23 D PDF

    2C5660

    Abstract: 2C5661 2C5662 2C5663
    Text: b û S b n i QOOCHIS IPPC 2 Amp, 300V, Transistor T-33-OÌ FEATURES CHIP TYPE: AN • Triple Diffused, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 30,000 A Nominal Collector - Gold - 3,000 A Nominal • Die Thickness - 8 Mils Nominal


    OCR Scan     		2C5660 2C5661 2C5662 2C5663 T-33-OÃ 2C5S82 2C5663 10MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: i 86D 0 1 7 9 0 T - 33 -1 BLX69A N AUER PHILIPS/DISCRETE QbE D bb53ci31 0014036 4 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V , The transistor is resistance stabilized and is


    OCR Scan     		BLX69A bb53c bb53131 PDF

    132/DD 127 D TRANSISTOR

    Abstract: No abstract text available
    Text: fZ 7 ^ 7# S G S -T H O M S O N iMinEasiigiLECTiaMnies S T B 3 3 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss 100 STB33N10 V RdS oii Id < 0.06 Q 33 A . . . . • . . . TYPICAL RDS(on) = 0.045 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    OCR Scan     		STB33N10 O-262) O-263) O-262 O-263 D723D4 132/DD 127 D TRANSISTOR PDF

    2SC3844

    Abstract: 374171 reo4
    Text: FUJ I TS U M I C R O E L E C T R O N I C S 31E D a 374R7b5 G01bb2b b S F M I T-33 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3844 Silicon High Speed Power Transistor 2S C 3844 4 5 0 V , 15A A B S O L U T E M A X IM U M R A T IN G S Parameter Storage Tem perature Range


    OCR Scan     		374R7b5 2SC3844 2SC3844 200jiH -450V 374171 reo4 PDF

    1N4Z45

    Abstract: T33 transistor
    Text: Atím m w an A M P com pany Wireless Power Transistor, 33W 1805-1880 MHz PH1819-33 V2.01 Features • NPN Silicon M icrow ave P o w er Transistor • C o m m o n Km itter C lass AB O peratio n • In tern al In pu t and O utpu t Im p ed an ce M atching • D iffu sed Km itter B allastin g


    OCR Scan     		PH1819-33 1N4Z45 T33 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 33 ttftH E S S HM-8832 J a n u a ry 1992 32K x 8 Asynchronous CMOS Static RAM Module Features Description • Full CMOS Six Transistor Memory Cell T h e H M -88 3 2 is a 3 2 K x 8 B it A sy n c h ro n o u s C M O S S tatic R A M M o d u le b a se d on a m u ltila yere d , co-fired , d u a l-in -line


    OCR Scan     		HM-8832 T-138 PDF

    BU428A

    Abstract: ix 3368 BU428 BU426-BU426A BU426 BU-428 ic ix 3368
    Text: MOTOROLA SC 1HE D I t3b?aS4 0004013 b | XSTRS/R F 7^ 33 '!$ MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE NPN SILICON TRANSISTOR 6 A M PERES . , . designed for use in the switched m ode power supply o f 9 0 ° and 1 1 0 ° colour television receivers.


    OCR Scan     		BU426 BU426A BU428A ix 3368 BU428 BU426-BU426A BU-428 ic ix 3368 PDF

    KE724502

    Abstract: DARLINGTON 20A WESTINGHOUSE ELECTRIC powerex cd KE72
    Text: 7 2 9 4 6 2 1 POWERËX INC T Ë Ï>I"| 72=141.51 00QCH47 b | Six/Pac Darlington TRANSISTOR Modules Dim A B C D E Inches 4.80 4.33 3.86 .236 .472 .213+ ¿°08 F G H I J K L M N O P .394 .709 .512 .276 1.02 1.5 1.18 .787 .315 .157 T-33-35 20 Amperes 450 Volts


    OCR Scan     		00QCH47 T-33-35 KE72450210 KE7245021Û KE72450210 KE724502 DARLINGTON 20A WESTINGHOUSE ELECTRIC powerex cd KE72 PDF

    PH1516-2

    Abstract: LT 1146 d 1047 transistor Cbc 183 cl PH1516
    Text: /M Îh C m a n A M P com pany Wireless Bipolar Power Transistor, 2W 1.45 -1.60 GHz PH1516-2 Features • • • • • • D e s ig n e d f o r C e llu la r B ase S ta tio n A p p lic a tio n s C lass AB: -33 d B c T yp 3 rd IM I a t 2 W atts PEP C lass A; +4-4 d B m I'yp 3 rd O r d e r I n te r c e p t P o in t


    OCR Scan     		PH1516-2 PH1516-2 LT 1146 d 1047 transistor Cbc 183 cl PH1516 PDF

    TRANSISTOR BI 237

    Abstract: 2as1c 2SC3949
    Text: FUJITSU MICROELECTRONICS 31E D C2 3 7 4 ci?t,B OOlbbSO 3 EIFMI r-33-f3 January 1990 Edition 1.1 FUJITSU PRODUCT P R O FILE- 2SC3949 Silicon High Speed Power Transistor 2SC3949 500V , 15A ABSOLUTE M A X IM U M RATIN GS P aram ete r S ym bol S torage T e m p e ra tu re Range


    OCR Scan     		T-33-Ã 2SC3949 2SC3949 25fis, TRANSISTOR BI 237 2as1c PDF

    2SD1378

    Abstract: 2SB1007 transistor I2w 11x7 76231
    Text: ROHM CO LTD' S7 ~ 40E D B /Transistors " 2 S D 1 3 7 8 7 f l a a cm 000SfiS2 fi ORHM 2SD1378 7-33-07 "" x £ ° $ y 7 Jls7 °Is — NPN y ' J - 1> h 7 > y 7 $ ' £ i i i ^ ^ j i i [l1lff l/L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor


    OCR Scan     		2SD1378 2SB1007t3 2SB1007. O-126 T-33-07 2SD1378 2SB1007 transistor I2w 11x7 76231 PDF

    Westinghouse diode

    Abstract: Ks324520 WESTINGHOUSE ELECTRIC motor ac KS621K20 Westinghouse module KS324
    Text: 7294621 POWEREX INC T É? DE | 72T4L.21 0DQEHG7 5 | f Q A T-33-35 Single Darlington _ AmDeres TRANSISTOR í c n /i nnn 51i+o M odules Dim A B C D E F G H J K L N P Inches 3.740 Max 3.150 + .010 .90 M 5xM et 2.44 Max .59 .925 1.181 Max .83 .28 .236 .216 Dia 4


    OCR Scan     		72T4L T-33-35 S32452010 KS32452010 KS621K2010 Westinghouse diode Ks324520 WESTINGHOUSE ELECTRIC motor ac KS621K20 Westinghouse module KS324 PDF

    transistor D 4515

    Abstract: 224515 KS224515 ks2245
    Text: 7 294621 P O W E R EX IÑC ~b5 d ÌT| 75^21 DDDDTOB fi f ~3 Single Darlington TRANSISTOR Modules Dim A B C D E F G H K M Inches 3.700 Max 3 .1 5 0 + .0 2 0 .79 1.34 Max 1.06 .315 1.220 Max .256 .571 T-33-35 150 Amperes J50/I Zvoîts M illim eters 94 Max .80 ± 0 .5


    OCR Scan     		T-33-35 KS22451510 S22451510 transistor D 4515 224515 KS224515 ks2245 PDF

    GP500

    Abstract: ACY33 bnsu germanium af transistors Germanium Transistor transistor ACY PNP
    Text: ACY33 PIMP Transistor fo r A F-driver and pow er stages The ACY 33 is a germanium PNP alloyed transistor in a case 1 A 3 DIN 41871 similar TO —1 . All leads are electrically insulated from the case. The collector terminal is indicated by a red dot on the rim of the case.


    OCR Scan     		ACY33 ACY33 --Y33 Q60103 GP500 bnsu germanium af transistors Germanium Transistor transistor ACY PNP PDF

    DA 2688

    Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
    Text: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055


    OCR Scan     		TIP3055 TIP2955 T0-218AA 7S265 DA 2688 transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688 PDF

    Untitled

    Abstract: No abstract text available
    Text: G E SOLID STATE 01 D E | 36 75 0 6 1 ODlMtES 7 | _ Arrays CA3097 Thyristor/Transistor Array For Military, Commercial, and Industrial Applications Features: • Complete isolation between elements m n-p-n transistor - VCeo = 30 V min. Ic = 100 mA (max.)


    OCR Scan     		CA3097 221TB PDF

    BLV80-28

    Abstract: TRANSISTOR D 471 transistor s72 S72 transistor 15 w RF POWER TRANSISTOR NPN
    Text: bSE T> 7 11 002 b GübETiö 734 M P H I N B L V 8 0 /2 8 PHILIPS INTERNA TIO NA L V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in base stations in the v.h.f. mobile radio band. Features: • multi-base structure and diffused em itter ballasting resistors fo r an optim um temperature profile;


    OCR Scan     		711002b BLV80/28 OT-121 00b3D0L. BLV80-28 TRANSISTOR D 471 transistor s72 S72 transistor 15 w RF POWER TRANSISTOR NPN PDF

    HF 331 transistor

    Abstract: No abstract text available
    Text: _LL 86D 01952* o o m n o DbE D N AMER PHILIPS/DXSCRETE BLY92A T -3 3 -& 7 D 2 A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and


    OCR Scan     		BLY92A HF 331 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: N AflER PHILIPS/DISCRETE 86D 01812 ObE D b b s a ' m oam osa a • BLX92A D r-3 3 - 4 5 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V, The transistor is resistance stabilized and is guaranteed to withstand severe


    OCR Scan     		BLX92A QQ14D5 PDF

    Untitled

    Abstract: No abstract text available
    Text: K B 4 0 0 0 B u ild in g B lo c k K it for A LA 4 0 0 Fam ily S e m i-C u sto m Linear A rrays Description The KB4000 Building Block Kit contains a variety of components that gives designers the capability to breadboard analog circuits. With the building block kit, designers have a tool for evaluating the many


    OCR Scan     		KB4000 ALA400 16-pin 50AL330240 D-8043 DS89-58LBC PDF

    Untitled

    Abstract: No abstract text available
    Text: . N AMER PHILIPS/DISCRETE 86D 01822 D DbE D bt.53131 DOlHObO □ 7" ~ 5 3 BLX93A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe


    OCR Scan     		BLX93A tbS3T31 PDF

    bly89a

    Abstract: Transistor bly89a
    Text: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every


    OCR Scan     		Q01414fl BLY89A 7Z675I bly89a Transistor bly89a PDF