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    TRANSISTOR B A O 33 ST Search Results

    TRANSISTOR B A O 33 ST Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B A O 33 ST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cs1w-cn226

    Abstract: OMRON PRO27 programming console omron sysmac cpm1 technical data nt2s-cn222-v1 OMRON PRO27 Operation Manual OMRON E5AF CPM2C-32CDTC-D pro27 OMRON Operation Manual CPM2C-32CDTM-D NT-CN221
    Text: Compact PLC Series CPM2C Programmable Logic Contr. General The CPM2C Micro PLC is suitable as a controller for simple stand−alone machines, as well as a simple networked controller. One innovation is the new synchronisation instruction, which makes it possible to generate output pulse trains as a function of an input pulse


    Original     		PDF space/6000 TS001 TS101 Pt100 Pt100, JPt100 SRT21 cs1w-cn226 OMRON PRO27 programming console omron sysmac cpm1 technical data nt2s-cn222-v1 OMRON PRO27 Operation Manual OMRON E5AF CPM2C-32CDTC-D pro27 OMRON Operation Manual CPM2C-32CDTM-D NT-CN221

    BLY90

    Abstract: Wf VQE 23 F WE VQE 23 E wf vqe 23 WF VQE 11 E WF VQE 23 E WE VQE 11 E IEC134 philips Trimmer 60 pf WF VQE 23 D
    Text: PHILIPS INTERNATIONAL 41E ]> • 711002b 0 0 2 7 ^ A b «PHIN BLY90 T-33-13 V.H.F. POWER TRANSISTOR - N-P-N epitaxial planar transistor intended for use in class-A, 8 and C operated mobile, industrial and military transmitters witlr a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran­


    OCR Scan     		PDF 711002b BLY90 T-33-13 7z67566 BLY90 Wf VQE 23 F WE VQE 23 E wf vqe 23 WF VQE 11 E WF VQE 23 E WE VQE 11 E IEC134 philips Trimmer 60 pf WF VQE 23 D

    2C5660

    Abstract: 2C5661 2C5662 2C5663
    Text: b û S b n i QOOCHIS IPPC 2 Amp, 300V, Transistor T-33-OÌ FEATURES CHIP TYPE: AN • Triple Diffused, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 30,000 A Nominal Collector - Gold - 3,000 A Nominal • Die Thickness - 8 Mils Nominal


    OCR Scan     		PDF 2C5660 2C5661 2C5662 2C5663 T-33-OÃ 2C5S82 2C5663 10MHz

    132/DD 127 D TRANSISTOR

    Abstract: No abstract text available
    Text: fZ 7 ^ 7# S G S -T H O M S O N iMinEasiigiLECTiaMnies S T B 3 3 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss 100 STB33N10 V RdS oii Id < 0.06 Q 33 A . . . . • . . . TYPICAL RDS(on) = 0.045 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    OCR Scan     		PDF STB33N10 O-262) O-263) O-262 O-263 D723D4 132/DD 127 D TRANSISTOR

    2SC3844

    Abstract: 374171 reo4
    Text: FUJ I TS U M I C R O E L E C T R O N I C S 31E D a 374R7b5 G01bb2b b S F M I T-33 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3844 Silicon High Speed Power Transistor 2S C 3844 4 5 0 V , 15A A B S O L U T E M A X IM U M R A T IN G S Parameter Storage Tem perature Range


    OCR Scan     		PDF 374R7b5 2SC3844 2SC3844 200jiH -450V 374171 reo4

    Untitled

    Abstract: No abstract text available
    Text: 33 ttftH E S S HM-8832 J a n u a ry 1992 32K x 8 Asynchronous CMOS Static RAM Module Features Description • Full CMOS Six Transistor Memory Cell T h e H M -88 3 2 is a 3 2 K x 8 B it A sy n c h ro n o u s C M O S S tatic R A M M o d u le b a se d on a m u ltila yere d , co-fired , d u a l-in -line


    OCR Scan     		PDF HM-8832 T-138

    BU428A

    Abstract: ix 3368 BU428 BU426-BU426A BU426 BU-428 ic ix 3368
    Text: MOTOROLA SC 1HE D I t3b?aS4 0004013 b | XSTRS/R F 7^ 33 '!$ MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE NPN SILICON TRANSISTOR 6 A M PERES . , . designed for use in the switched m ode power supply o f 9 0 ° and 1 1 0 ° colour television receivers.


    OCR Scan     		PDF BU426 BU426A BU428A ix 3368 BU428 BU426-BU426A BU-428 ic ix 3368

    KE724502

    Abstract: DARLINGTON 20A WESTINGHOUSE ELECTRIC powerex cd KE72
    Text: 7 2 9 4 6 2 1 POWERËX INC T Ë Ï>I"| 72=141.51 00QCH47 b | Six/Pac Darlington TRANSISTOR Modules Dim A B C D E Inches 4.80 4.33 3.86 .236 .472 .213+ ¿°08 F G H I J K L M N O P .394 .709 .512 .276 1.02 1.5 1.18 .787 .315 .157 T-33-35 20 Amperes 450 Volts


    OCR Scan     		PDF 00QCH47 T-33-35 KE72450210 KE7245021Û KE72450210 KE724502 DARLINGTON 20A WESTINGHOUSE ELECTRIC powerex cd KE72

    TRANSISTOR BI 237

    Abstract: 2as1c 2SC3949
    Text: FUJITSU MICROELECTRONICS 31E D C2 3 7 4 ci?t,B OOlbbSO 3 EIFMI r-33-f3 January 1990 Edition 1.1 FUJITSU PRODUCT P R O FILE- 2SC3949 Silicon High Speed Power Transistor 2SC3949 500V , 15A ABSOLUTE M A X IM U M RATIN GS P aram ete r S ym bol S torage T e m p e ra tu re Range


    OCR Scan     		PDF T-33-Ã 2SC3949 2SC3949 25fis, TRANSISTOR BI 237 2as1c

    Westinghouse diode

    Abstract: Ks324520 WESTINGHOUSE ELECTRIC motor ac KS621K20 Westinghouse module KS324
    Text: 7294621 POWEREX INC T É? DE | 72T4L.21 0DQEHG7 5 | f Q A T-33-35 Single Darlington _ AmDeres TRANSISTOR í c n /i nnn 51i+o M odules Dim A B C D E F G H J K L N P Inches 3.740 Max 3.150 + .010 .90 M 5xM et 2.44 Max .59 .925 1.181 Max .83 .28 .236 .216 Dia 4


    OCR Scan     		PDF 72T4L T-33-35 S32452010 KS32452010 KS621K2010 Westinghouse diode Ks324520 WESTINGHOUSE ELECTRIC motor ac KS621K20 Westinghouse module KS324

    transistor D 4515

    Abstract: 224515 KS224515 ks2245
    Text: 7 294621 P O W E R EX IÑC ~b5 d ÌT| 75^21 DDDDTOB fi f ~3 Single Darlington TRANSISTOR Modules Dim A B C D E F G H K M Inches 3.700 Max 3 .1 5 0 + .0 2 0 .79 1.34 Max 1.06 .315 1.220 Max .256 .571 T-33-35 150 Amperes J50/I Zvoîts M illim eters 94 Max .80 ± 0 .5


    OCR Scan     		PDF T-33-35 KS22451510 S22451510 transistor D 4515 224515 KS224515 ks2245

    GP500

    Abstract: ACY33 bnsu germanium af transistors Germanium Transistor transistor ACY PNP
    Text: ACY33 PIMP Transistor fo r A F-driver and pow er stages The ACY 33 is a germanium PNP alloyed transistor in a case 1 A 3 DIN 41871 similar TO —1 . All leads are electrically insulated from the case. The collector terminal is indicated by a red dot on the rim of the case.


    OCR Scan     		PDF ACY33 ACY33 --Y33 Q60103 GP500 bnsu germanium af transistors Germanium Transistor transistor ACY PNP

    DA 2688

    Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
    Text: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055


    OCR Scan     		PDF TIP3055 TIP2955 T0-218AA 7S265 DA 2688 transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688

    Untitled

    Abstract: No abstract text available
    Text: G E SOLID STATE 01 D E | 36 75 0 6 1 ODlMtES 7 | _ Arrays CA3097 Thyristor/Transistor Array For Military, Commercial, and Industrial Applications Features: • Complete isolation between elements m n-p-n transistor - VCeo = 30 V min. Ic = 100 mA (max.)


    OCR Scan     		PDF CA3097 221TB

    Untitled

    Abstract: No abstract text available
    Text: K B 4 0 0 0 B u ild in g B lo c k K it for A LA 4 0 0 Fam ily S e m i-C u sto m Linear A rrays Description The KB4000 Building Block Kit contains a variety of components that gives designers the capability to breadboard analog circuits. With the building block kit, designers have a tool for evaluating the many


    OCR Scan     		PDF KB4000 ALA400 16-pin 50AL330240 D-8043 DS89-58LBC

    bly89a

    Abstract: Transistor bly89a
    Text: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every


    OCR Scan     		PDF Q01414fl BLY89A 7Z675I bly89a Transistor bly89a

    bd7995

    Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
    Text: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND


    OCR Scan     		PDF 8366IT STR910A B26000 B26050 B2G010 B26010 B2701D 9SM102/V4T7 bd7995 P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361

    kd721K

    Abstract: No abstract text available
    Text: 7294621 POWE RE X INC ' m Tfl I>F| 7ET4LS1 DODSabl 4 N E R E K KD721KA2 Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Dual Darlington Transistor Module 25 Amperes/1000 Volts Description Powerex Dual Darlington Transistor Modules are designed for use in


    OCR Scan     		PDF KD721KA2 Amperes/1000 kd721K

    LC100A

    Abstract: No abstract text available
    Text: POQJEREX INC O W Tfl E R E DE | TEIMbai 00D2Q3S □ | - T - 2 ,3 ' ¿7 KT234510 X Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412) 925-7272 S p H t-D U S l B ip O lS t Transistor Module 100 Amperes/600 Volts Description Powerex Split-Dual Bipolar Transistor


    OCR Scan     		PDF 00D2Q3S KT234510 Amperes/600 KT234510 peres/600 LC100A

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 86D 0 1 8 9 4 ObE D • bb53T31 0 0 m i 3 2 f^ 3 Y -6 1 ’~ D BLY88A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V . The transistor is resistance stabilized and is


    OCR Scan     		PDF bb53T31 BLY88A

    ITC117

    Abstract: No abstract text available
    Text: INTEGRATED TELECOM CIRCUITS ITC117P/ITC135P/ITC137P The Integrated Telecom Circuit series combines a 1-Form-A solid state relay, bridge rectifier, Darlington transistor, optocoupler and zener diodes in one package for all your telecom applications. FEATURES


    OCR Scan     		PDF ITC117P/ITC135P/ITC137P 3750Vrm ITC117P/ITC135P/1TC137P ITC117 P/ITC135 P/ITC137 ITC117P/ITC135P/ITC137P 1-800-CP

    ts120 clare

    Abstract: bi 370 transistor e transistor TIP 350 optocoupler bi-directional cp clare relay 3A bidirectional optocoupler 1HA 104 bi 370 transistor TS118 BS415
    Text: CLARE CPCIare C P / SOLID CORPORATION STATE bbE D 2144=104 0D002D5 221 « C P C L “TS” Series Solid State Products Division OptoMOS “TS” Series Multifunction Solid State Telecom Switches DESCRIPTION CP Clare’s “TS” series telecom switches provide optimal function density for


    OCR Scan     		PDF 0D002D5 k-10mS- ts120 clare bi 370 transistor e transistor TIP 350 optocoupler bi-directional cp clare relay 3A bidirectional optocoupler 1HA 104 bi 370 transistor TS118 BS415

    Philips film capacitors 27 pf

    Abstract: trimmer 3-30 pf TL 2222 BLW60C Philips film capacitors polystyrene b32s philips carbon film resistor z670
    Text: bSE D • TllOôBb Gabassi 214 « P H I N BLW60C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile, industrial and m ilita ry transmitters w ith a nominal supply voltage o f 12,5 V. The transistor is resistance stabilized


    OCR Scan     		PDF BLW60C 00b35b2 7Z772S6 7Z77255 Philips film capacitors 27 pf trimmer 3-30 pf TL 2222 BLW60C Philips film capacitors polystyrene b32s philips carbon film resistor z670

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b 'lE ]> bb53^31 □ D 2 f i ci m IAPX TTD BLV21 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­


    OCR Scan     		PDF BLV21