HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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blw86
Abstract: ferroxcube wideband hf choke BY206
Text: m b5E » 711002b 0Db33Sû SST « P H I N BLW86 _PHILIPS INTERNATIONAL_ j H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is
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711002b.
0Db33SÃ
BLW86
blw86
ferroxcube wideband hf choke
BY206
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NEX2301
Abstract: NEX2303 NEX2300 NEX230187 NEX2302 NEX230265 NEX230365
Text: N E C / CALIFORNIA NEC 1SE b42?m4 D 0001202 S .7 -3 3 r< 3 3 -o * NEX2300 SERIES 2.3 GHz POWER OSCILLATOR TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIG H POWER: 3.2 W AT 2.3 GHz The NEX2300 series is an NPN transistor using NEC’s ad vanced Stepped Electrode Transistor SET structure with
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NEX2300
NEX2300
NEX2301
NEX2302
NEX2303
NEX230365
NEX230187
NEX230265
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FT1551
Abstract: FT2551 fujitsu ring emitter
Text: FUJITSU MICROELECTRONICS 374=171=2 ODlbblD S S F I 1 I 31E D T - 33 January 1990 Edition 1.1 PRODUCT PROFILB= _ Fujrrsu FT1551 Silicon High Speed Power Transistor DESCRIPTION The FT1E51 Is a silicon NPN general purpose, medium power transistor fabricated w ith Fujitsu's unique Ring Em itter Transistor R ET technology. RE T devices ara
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37417fe2
-r-33
FT1551
FT1E51
FT2551,
85MHz
T-33-09
FT2551
fujitsu ring emitter
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TRANSISTOR 2Sa 1075
Abstract: TRANSISTOR 2Sc 2525 2SA audio POWER TRANSISTORS 2SA transistor 2SA1075 transistor 2SA 2SA POWER TRANSISTORS 2SA1076 TRANSISTOR 2SA1076 2sa tr
Text: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SA1075 2SA1076 SILICON PNP RING EMITTER TRANSISTOR RET T h e 2S A 1 0 7 5 /2 S A 1 0 7 6 are silicon PNP general purpose, high power switching transistors fabricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) te c h
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2SA1075
2SA1076
1075/2SA
2525/2SC
10MHz
300ms
TRANSISTOR 2Sa 1075
TRANSISTOR 2Sc 2525
2SA audio POWER TRANSISTORS
2SA transistor
transistor 2SA
2SA POWER TRANSISTORS
2SA1076
TRANSISTOR 2SA1076
2sa tr
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2N3906
Abstract: transistor 2N3905 2N3905 2n3906 PNP transistor DC current gain transistor T43 S03 pnp transistor 3906 3906 pnp transistor 2N3906 3906
Text: 2N 3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCEo=40V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage C ollector-Emitter Vbltage
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2N3905/3906
625mW
2N3906
Widths300
-30-SO
DD2S024
transistor 2N3905
2N3905
2n3906 PNP transistor DC current gain
transistor T43
S03 pnp
transistor 3906
3906 pnp
transistor 2N3906
3906
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BST100
Abstract: philips bst100 to92 transistor pinout
Text: • bbSBÌBl □D23c171 Dfil H A P X BST100 N AMER PHILIPS/DISCRETE b7E D P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers.
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BST100
200mA
7Z94272
7Z94273
7Z21844
BST100
philips bst100
to92 transistor pinout
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ferrite 4312
Abstract: ferrite beat philips rf choke ferrite CF-800 lb533
Text: N AMER PHILIPS/DISCRETE tTE J> ^53=131 DDEÔ761 71S M A P X WÊ BLT92/SL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.
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BLT92/SL
OT122D)
ferrite 4312
ferrite beat
philips rf choke ferrite
CF-800
lb533
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2SK800
Abstract: NEC 701 TC-3786
Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK800 The 2SK800 is N-channel MOS Field E ffe ct Power Transistor designed fo r converters. FEATURES • PACKAGE D IM EN SIO N S ¡n m illim eters inches Suitable fo r sw itching power supplies, actuater controls,
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2SK800
2SK800
RS39726
1986M
NEC 701
TC-3786
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BY206
Abstract: BZY88-C3V3 BLW34 capacitor polyester philips 100A-2RO-C-PX-50
Text: N AMER PHILIPS/DISCRETE b^E bhS3«i31 □02^32fc, □‘it. I IAPX BLW34 » Jl U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation
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BLW34
7Z77720
BLW34
BY206
BZY88-C3V3
capacitor polyester philips
100A-2RO-C-PX-50
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marking code Iay
Abstract: marking IAY transistor marking 1f CMPT3640
Text: Central" C M PT3640 S em ico n d u cto r Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CEN TRAL S E M IC O N D U C T O R CM PT3640 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for satu rated switch ing appl icatrons.
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CMPT3640
OT-23
10rer
marking code Iay
marking IAY
transistor marking 1f
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR i TECHNICAL DATA 2N4405JAN, JTX Processed per MlL-S-19500 448 PNP Silicon Small-Signal Transistor crystaiomcs 2805 Veterans Hwhwav Oesigned><y genijra^oufpcse sw uchinyano ampui.er 3£*ii>CJit*or,s S u ite 14 Ronkor koma. N.Y. 1177 i MAXIMUM RATINGS
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2N4405JAN,
MlL-S-19500
T0-205AD
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XR-2012
Abstract: L1342
Text: EX AR CO RP 34 2 2 6 18 EXAR CORP ^j| 34221310 G Q O S Q V ? 7 ~ HST E X A R 9 1D 0 5 0 7 7 X R -2 0 1 1/12/13/14 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The X R -2 0 1 1/2012/2013/2014 are high-voltage, highcurrent Darlington transistor arrays consisting of seven
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KTC3503
Abstract: KTA1381
Text: SEMICONDUCTOR TECHNICAL DATA KTC3503 TRIPLE DIFFUSED NPN TRANSISTOR HIGH-DEFINITION CRT DISPLAY, VIDEO OUTPUT APPLICATIONS. FEATURES • High breakdown voltage : VCEO>300V. • Small reverse transfer capacitance and excellent high frequency characteristic.
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KTC3503
KTA1381.
KTC3503
KTA1381
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QM10TE-HB
Abstract: bup transistor bvp DIODE QM10 QM10T
Text: MITSUBISHI TRANSISTOR MODULES QM10TE-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM10TE-HB • Ic • V ce x • hFE Collector current. 10A [ Collector-emitter voltage. 600V j DC current gain.250
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QM10TE-HB
E80276
E80271
QM10TE-HB
bup transistor
bvp DIODE
QM10
QM10T
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transistor G28
Abstract: G28 transistor buk101
Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.
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BUK101-50GS
Iisl/Iisl25
transistor G28
G28 transistor
buk101
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transistor marking JB
Abstract: A301 A306 KRA301 KRA302 KRA303 KRA304 KRA305 KRA306
Text: KRA301KRA306 EPITAXIAL PLANAR PNP TRANSISTOR _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors. Simplify Circuit Design.
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KRA301
KRA306
KRA301
KRA302
KRA303
KRA304
KRA305
KRA306
KRA303
KRA304
transistor marking JB
A301
A306
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KTB2955
Abstract: KTD3055
Text: K EC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTD3055 TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to KTB2955. • Recommended for 30W —35W Audio Frequency Amplifier output Stage. MILLIMETERS
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KTD3055
KTB2955.
220AB
100mS
KTB2955
KTD3055
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SMP60N06-18 power mosfet
Abstract: SMP60N06-18 sup50n06-18 SUP50N06 D 1437 transistor
Text: Tem ic SMP60N06-18 S em i co n d u c t or s N-Channel Enhancement-Mode Transistor, 18-mQ ros on Product Summary VDS (V) 60 VIS Id (A) r DS(on) ( ^ ) 0.018 60 See lower-cost version: SUP50N06-18 D Q T0-220AB o cJi DRAIN connected to TAB Ö s GD S Top View
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SMP60N06-18
18-mQ
SUP50N06-18
T0-220AB
P-36737--Rev.
30-May-94
SMP60N06-18 power mosfet
SMP60N06-18
sup50n06-18
SUP50N06
D 1437 transistor
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KTC1027
Abstract: ktc1027 transistor ra-100 KTA1023 transistor ktc1027
Text: SEMICONDUCTOR TECHNICAL DATA KTC1027 EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURE • Complementary to KTA1023. MAXIMUM RATINGS Ta=25 °C CHARACTERISTIC RATING UNIT SYMBOL Collector-Base Voltage V CBO 120 V Collector-Emitter Voltage
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KTC1027
KTA1023.
T0-92L
KTC1027
ktc1027 transistor
ra-100
KTA1023
transistor ktc1027
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K2025
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.
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BUK202-50X
K2025
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTA1381 EPITAXIAL PLANAR PNP TRANSISTOR HIGH-DEFINITION CRT DISPLAY, VIDEO OUTPUT APPLICATIONS. FEATURES • High breakdown voltage : V ^ 3 0 0 V . • Small reverse transfer capacitance and excellent high frequency characteristic.
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KTA1381
KTC3503.
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BUK106-50L
Abstract: BUK106-50S diode 06-50S
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK106-50L/S Logic level TOPFET_ BUK106-50LP/SP DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a general
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BUK106-50L/S
BUK106-50LP/SP
BUK106-50L
BUK106-50S
IPS/IPS25
BUK106-50S
diode 06-50S
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