318M
Abstract: LL1608-FH MBC13900 MBC13900T1 marking r4 SOT343 SOT343 lna
Text: Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package MBC13900T1 900 SOT-343 The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ
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MBC13900/D
MBC13900
OT-343)
MBC13900T1
OT-343
MBC13900
SC-70
318M
LL1608-FH
MBC13900T1
marking r4 SOT343
SOT343 lna
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4066 spice model
Abstract: LL1608-FH MBC13900 MBC13900T1
Text: Freescale Semiconductor, Inc. Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package
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MBC13900/D
MBC13900
OT-343)
MBC13900T1
OT-343
MBC13900
SC-70
4066 spice model
LL1608-FH
MBC13900T1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MHW8202B/D SEMICONDUCTOR TECHNICAL DATA The RF Line CATV Amplifier Module MHW8202B Features Specified for 77 - , 110 - and 128 - Channel Loading Excellent Distortion Performance Silicon Bipolar Transistor Technology Unconditionally Stable Under All Load Conditions
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MHW8202B/D
MHW8202B
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381 motorola
Abstract: CTB110 CTB128 MHW8202B XMD110 XMD128
Text: MOTOROLA Order this document by MHW8202B/D SEMICONDUCTOR TECHNICAL DATA The RF Line CATV Amplifier Module MHW8202B Features Specified for 77 - , 110 - and 128 - Channel Loading Excellent Distortion Performance Silicon Bipolar Transistor Technology Unconditionally Stable Under All Load Conditions
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MHW8202B/D
MHW8202B
381 motorola
CTB110
CTB128
MHW8202B
XMD110
XMD128
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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mj423 motorola
Abstract: mj423
Text: MOTOROLA Order this document by MJ423/D SEMICONDUCTOR TECHNICAL DATA MJ423 High-Voltage NPN Silicon Transistor 10 AMPERE POWER TRANSISTOR NPN SILICON 4M VOLTS 125 WATTS . . . designed for medium-to-high voltage inverters, converters, regulators and switching circuits.
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MJ423/D
MJ423
mj423 motorola
mj423
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14N60E
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M GW 14N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 14N 60ED Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged
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14N60ED/D
14N60E
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP4N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP4N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high
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MGP4N60E/D
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N60E
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP21 N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP21N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high
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MGP21
N60E/D
MGP21N60ED
N60E
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MGP20N
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP20N60U/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP20N60U Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high
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MGP20N60U/D
MGP20N60
O-220
21A-09
O-22QAB
MGP20N
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transistor a09
Abstract: GP7N60 MGP7N60E
Text: MOTOROLA O rder th is docum ent by MGP7N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP7N60E Insulated G a te Bipolar Transistor N-Channel Enhancem ent-M ode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high
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MGP7N60E/D
GP7N60E
T0-220
transistor a09
GP7N60
MGP7N60E
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diode lt 238
Abstract: 21N60ED
Text: MOTOROLA Order this document by MGW21 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 21N 60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged with a soft recovery u ltra -fa s t rectifier and uses an advanced
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MGW21
N60ED/D
MGW21N60ED/D
diode lt 238
21N60ED
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTDF2N06HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Medium Power Surface Mount Products MTDF2N06HD Motorola Preferred Device TM OS Dual N -C hannel Field E ffect Transistor DUAL TMOS POWER MOSFET 1.5 AMPERES
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MTDF2N06HD/D
MTDF2N06HD
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document SE M IC O N D U C T O R TECHNICAL DATA byMPsw42/D One W att High V oltage Transistor NPN Silicon M P S W 4 2 Motorola Preferred Device COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r Voltage
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byMPsw42/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBR5179LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor D e sig n e d fo r s m a ll-s ig n a l a m p lific a tio n at fre q u e n c ie s to 500 M H z. Specifically packaged for use in thick and th in -film circuits using surface mount
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MMBR5179LT1/D
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F234
Abstract: 1803 TRANSISTOR equivalent MRF234 JL055 MRF-234
Text: MRF234 silicon The RF Line 25 W - 90 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTORS . .d e s ig n e d fo r 1 2 .5 V o lt , m id -b a n d NPN SILICON large-signal a m p lifie r a p p li c ations in in d u s tria l a n d c o m m e rc ia l F M e q u ip m e n t o p e ra tin g in the
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MRF234
F234
1803 TRANSISTOR equivalent
MRF234
JL055
MRF-234
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MOTOROLA ELECTROLYTIC CAPACITOR
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear am plifier applications in industrial and com m ercial FM/AM
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MRF15090/D
MOTOROLA ELECTROLYTIC CAPACITOR
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR901LT1,T3 NPN Silicon High-Frequency Transistor Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching
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MMBR901LT1/D
OT-23
MMBR901LT1
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sps 953 transistor data
Abstract: NPN/sps 953 transistor data
Text: MOTOROLA Order this document by MRF10502/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF10502 Microwave Pulse Power Transistor Designed for 1 0 2 5 -1 1 5 0 MHz pulse common base amplifier applications such as TCAS, TACAN and M ode-S transmitters. • Guaranteed Performance @ 1090 MHz
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MRF10502/D
MRF10502
355J-0al
sps 953 transistor data
NPN/sps 953 transistor data
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WESTINGHOUSE DIODE
Abstract: WT600 westinghouse transistors WT635-01D westcode sw Westcode T-635
Text: 9709955 dESTCODE W ESTCODE S EM IC O N D U C TO R S _ 3 4 C T SEMICONDUCTORS m De J 01741 TTD'^ SS _D' T - 33-29 D0D1741 Technical WESTCODE SEMICONDUCTORS Publication WT600 Issue 1 December 1980 Discrete Power Darlington Transistor Types WT635-01 & WT635-02
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D0D1741
WT635-01
WT635-02
WT600
WT635-01D/-02D)
T635-00D
T635-00M
3-4-16U
WESTINGHOUSE DIODE
WT600
westinghouse transistors
WT635-01D
westcode sw
Westcode
T-635
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transistor te 2305
Abstract: P8000
Text: MOTOROLA Order this document by MTP40N1OE/D SEMICONDUCTOR TECHNICAL DATA Advance Data Sheet TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 40 AMPERES 100 VOLTS RDS on = 0-04 OHM This advanced TMOS E-FET is designed to withstand high
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MTP40N1OE/D
transistor te 2305
P8000
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westinghouse transistors
Abstract: WT440 WT4311 WT4334 WT4411 WT4434 WT4400 Westcode Semiconductors transistor WT-440 WT transistor
Text: 97 0 99 55 WESTCODE SE MI CO ND UC TO RS iIESTCODL S E M I C O N D U C T O R S 34 34C 01 73 L DE”| t17Din S 5 D T~ DDD1731 □ |~ Technical W ESTCODE SEMICONDUCTORS Publication WT43/4400 Issue 1 A u g u st 1981 High Power Transistor Types WT4311 to W T4334 and WT4411 to WT4434
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0173L
DD01731
WT43/4400
WT4311
WT4334
WT4411
WT4434
0-160V
0-140V
0-120V
westinghouse transistors
WT440
WT4434
WT4400
Westcode Semiconductors transistor
WT-440
WT transistor
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GP4N60
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP4N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP4N60ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 4.0 A @ 90°C 6.0 A @ 25°C
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MGP4N60ED/D
GP4N60
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB29N15E TMOS E-FET Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 29 AMPERES 150 VOLTS RDS on = 0-07 OHM This advanced TMOS E-FET is designed to withstand high
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MTB29N15E/D
MTB29N15ED
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