TRANSISTOR DAG Search Results

TRANSISTOR DAG Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR DAG Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications.	Original	HE8050 HE8050 HE8550 HE8050G-x-AB3-R OT-89 HE8050G-x-AE3-R OT-23 HE8050L-x-T92-B HE8050G-x-T92-B HE8050L-x-T92-K	PDF
bsm 25 gd 1200 n2 Abstract: bsm 75 gd 120 n2 siemens mosfet BSM 50 siemens igbt bsm 50 gd 120 n2 Thyristor Tabelle BSM15GD BSM15GD120DN 250068 BSM15GD120DN2 Text: Technische Angaben Technical Information 1 Übersicht IGBT-Module 1 Overview IGBT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V, 1200 V und 1700 V und im Strombereich	Original		PDF
of mosfet BUZ 384 Abstract: BUZ MOSFET thyristor capacitive discharge ignition tig welding transistor CF leistungstransistoren BUZ 338 SIEMENS MOSFET BUZ Ignition weld tig SIEMENS THYRISTOR Text: Technische Angaben Technical Information 1 Übersicht 1 Overview 1.1 SIPMOS-Leistungstransistoren 1.1 SIPMOS Power Transistors Leistungstransistoren im Bereich 50 V . 1000 V und 10 mΩ . 8 Ω Power transistors in the 50 V to 1000 V and 10 mΩ to 8 Ω range	Original	MIL-STD-883, MIL-STD-883; of mosfet BUZ 384 BUZ MOSFET thyristor capacitive discharge ignition tig welding transistor CF leistungstransistoren BUZ 338 SIEMENS MOSFET BUZ Ignition weld tig SIEMENS THYRISTOR	PDF
smd-transistor DATA BOOK Abstract: triac ansteuerung smd-transistor SMD transistors Relais datenblatt RGS 13 simple circuit diagram of electronic choke SITAC P-Channel Depletion Mode Field Effect Transistor SMD transistor Mo Siemens varistor family Text: Technische Angaben Technical Information SIPMOS Kleinsignal-Bauelemente SIPMOS Small-Signal Components MOS-Transistoren im Bereich 50 V . 800 V und 40 mA . 3800 mA. IGBT: 1200 V; 2500 mA MOS transistors in the range of 50 V . 800 V and 40 mA . 3800 mA.	Original		PDF
2N2222A Abstract: 05G433 OA 60 TRANSISTOR 707 a13707 Text: L ALLEGRO MICROSYSTEMS INC T3 D 05Q433Ô G003b43 T • T - q i- o / PROCESS BBC Process BBC NPN Small-Signal Transistor The electrical characteristics of selected versions of Process BBC, the NPN counterpart of Sprague Electric’s planar PNP Process BDA transistor, match	OCR Scan	0S0433Ã Q0Q3b43 500mA 05G433Ã 0QD3b44 2N2222A 05G433 OA 60 TRANSISTOR 707 a13707	PDF
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007	PDF
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: ALLEGRO MICROSYSTEMS INC T3 D • D5GM33Ö G0037S7 3 ■ ALGR T-91-01 P R O C E S S N J26L Process NJ26L N-Channel Junction Field-Effect Transistor Process NJ26L is an N-channel junction fietdeffect transistor designed for general-purpose, lownolse, high-galn applications not requiring high	OCR Scan	D5GM33Ã G0037S7 T-91-01 NJ26L NJ26L -R009	PDF
B 773 transistor Abstract: 2N4403 Text: ß. ' •- ALLE6R0 MICROSYSTEMS INC T3 D • QS0433ß QQQ3b71 4 ■ AL6R T -9 1-0 1 PROCESS ODA Process DDA PNP Small-Signal Transistor Process DDA is a double-diffused epitaxial planar silicon PNP transistor. It is designed for use as a lownoise, high-gain amplifier or as a medium-power	OCR Scan	50433A T-91-01 G50433Ã G003b72 T-91-01 -al77 B 773 transistor 2N4403	PDF
transistor a13 Abstract: A13 transistor bma 023 T 427 transistor Text: AL LE GR O MICROSYSTEMS INC =J3 D • 0SGM33Ö DÜ03bS7 T ■ ALGR T -V h ö l PROCESS BMA Process BMA PNP High-Voltage Transistor The P N P process B M A transistor is a double diffused silicon epitaxial planar device used primarily in video circuits and similar high-voltage, low-current	OCR Scan	05D433fl 0003hS7 05DM33fl VBE10NI transistor a13 A13 transistor bma 023 T 427 transistor	PDF
BT diode Abstract: ECONOPACK mounting instructions bsm 25 gd 1200 n2 bsm 75 gd 120 n2 bsm 50 gd 120 n2 calculation of IGBT snubber siemens igbt BSM 200 GA 120 BSM15GD120DN2 diode bym 26 siemens igbt BSM 100 Text: Technische Angaben Technical Information SIEMENS 1 Übersicht IGBT-Module 1 O verview IG BT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V,	OCR Scan		PDF
MARKING ra Abstract: LT 612 1054 transistor DAG marking dag transistor MAR 819 ci 7436 7334 marking MAR 601 transistor Text: Temic BFQ81 Semiconductors Silicon NPN Planer RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features • Small feedback capacitance • L ow n o ise figure • Low cross modulation Marking: RA Plastic case SOT 23 1 = Collector; 2 = Base; 3 = Emitter	OCR Scan	BFQ81 21-Mar-97 MARKING ra LT 612 1054 transistor DAG marking dag transistor MAR 819 ci 7436 7334 marking MAR 601 transistor	PDF
RC723DP Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK Text: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525	OCR Scan	/2525A /3525A /2527A /3527A 523/3523A RC723DP SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK	PDF

Untitled Abstract: No abstract text available Text: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 0G037G5 b ■ T-91-01 PROCESS JLA Process JLA NPN Small-Signal Transistor P ro c e ss J L A is a double-diffused epitaxial planar N P N silicon device. It is d esign ed for u se in generalp urp ose amplifier and high-current switching circuits.	OCR Scan	0SD433Ã DDD37DS T-91-01 800mA D37Db T-91-Q1	PDF
Untitled Abstract: No abstract text available Text: AL L E GRO MI C ROS Y S T E MS I NC T3 D • 050M33Ö 0003721 4 ■ ALGR T-91-01 PROCESS SQL Process SQL NPN Darlington Transistor Process SQ L is a double-diffused silicon epitaxial NPN Darlington pair. This device is designed for use as a high-gain amplifier in audio and control circuits	OCR Scan	50M33Ã 00G3751 T-91-01 500mA Q0G3722 T-91-01	PDF
C8248 Abstract: AC824 Practical circuit with a digital scale avr AC-8248 DAC8248 Text: ANALO G D EVIC ES dial 12-Bt 8-Bt tye Q xtie- Bifered QvCB DAGbnverter DSC8248 FEATURES Tw o Matched 12-Bit DACs on One Chip 12-Bit Resolution w ith an 8-Bit Data Bus Direct Interface w ith 8-Bit Microprocessors Double-Buffered Digital Inputs RESET to Zero Pin	OCR Scan	12-Bt C8248 24-Pin 12-Bit C8248 AC824 Practical circuit with a digital scale avr AC-8248 DAC8248	PDF
of mosfet BUZ 384 Abstract: simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn Text: SIEMENS Technische Angaben Technical Information 1 Übersicht 1 Overview 1.1 SIPMOS-Leistungstransistoren 1.1 SIPMOS Power Transistors Leistungstransistoren im Bereich 5 0 V . 1000 V und 10 m fi . 8 Q Power transistors in the 50 V to 1000 V and 10 mQ to 8 Q range	OCR Scan	SIL00001 SIL00002 MILSTD-883, of mosfet BUZ 384 simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn	PDF
siemens dioden Abstract: leistungstransistoren thyristor capacitive discharge ignition Leistungsdiode car ignition circuit diagram of mosfet BUZ 384 car ignition chip die npn transistor Siemens Halbleiter Text: Technische Angaben Erläuterungen der Datenblattwerte Qualität und Zuverlässigkeit Technical Inform ation Explanation o f Data Sheet Parameters Q uality and R eliability SIEM ENS 1 Übersicht 1.1 SIPM OS-Leistungstransistoren Leistungstransistoren im Bereich 5 0 V .	OCR Scan	SIL00001 MILSTD-883, siemens dioden leistungstransistoren thyristor capacitive discharge ignition Leistungsdiode car ignition circuit diagram of mosfet BUZ 384 car ignition chip die npn transistor Siemens Halbleiter	PDF
hafo Abstract: KF-38E KYOCERA 400P Crystal CST ceramic resonators KF-38E LC5872 LC5873 LC5874 LC5876 M 9639 transistor Text: Ordering number:EN3956C SAiYO No. 3956C ¡I1 _ C M O S LSI LC5872, LC5873, LC5874, LC5876 4-bit Single-chip Microcontrollers with LCD driver, 12KB/8KB/6KB/4KB ROM, 1Bk RAM on chip Overview Features The LC5872, LC5873, LC5874 and LC5876 are 4-bit	OCR Scan	EN3956C 3956C LC5872, LC5873, LC5874, LC5876 12KB/8KB/6KB/4KB LC5874 hafo KF-38E KYOCERA 400P Crystal CST ceramic resonators KF-38E LC5872 LC5873 LC5876 M 9639 transistor	PDF
VEB mikroelektronik Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft Text: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP	OCR Scan	57AHNSDORP VEB mikroelektronik Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft	PDF
SE012 Abstract: MC 31136 transistor wih code L0A capacitor seramic LO2 W AW counter KF-38E KYOCERA saa 1030 2068N transistor KD 503 LC5876 Text: Ordering num ber:EN 3956C C M O S LSI No. 3956C LC5872, LC5873, LC5874, LC5876 SANYO i 4-bit Single-chip Microcontrollers with LCD driver, 12KB/8KB/6KB/4KB ROM, 1Bk RAM on chip X. / // Overview X -j-.r Features The LC5872, LC5873, LC5874 and LC5876 are 4-bit	OCR Scan	EN3956C 3956C LC5872, LC5873, LC5874, LC5876 12KB/8KB/6KB/4KB LC5874 SE012 MC 31136 transistor wih code L0A capacitor seramic LO2 W AW counter KF-38E KYOCERA saa 1030 2068N transistor KD 503 LC5876	PDF
500 DKZ Abstract: TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren Text: TELEPO RT VI ein Sprechfunkgerät für das 80-, 100- und 150/160-MHz-Band Kanalraster 50, 25 und 20 kHz Beschreibung A H /B s -V 300 657/1 Teile 1, 2, 3, 4, 5, 6 Nachdruck, auch auszugsweise, verboten 765 kn Mo Technische W eiterentwicklung Vorbehalten Inhalt	OCR Scan	150/160-MHz-Band 500 DKZ TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren	PDF
VPA15 Abstract: VPA18 transistor DAG hybrid ic 9PIN Text: I Ordering number: EN3529I F BET Hybrid 1C No. 3529 SA’WO F VPA15 Video Pack, Video Output Amplifier for High-resolution C R T D isp la y s i PINOUT OVERVIEW The VPA15 is a composite, single-channel, video output amplifier IC for high-resolution monochrome or RGB	OCR Scan	EN3529I VPA15 352ft-- VPA18 transistor DAG hybrid ic 9PIN	PDF

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TRANSISTOR DAG Search Results

TRANSISTOR DAG Result Highlights (5)

TRANSISTOR DAG Datasheets Context Search

Untitled

bsm 25 gd 1200 n2

of mosfet BUZ 384

smd-transistor DATA BOOK

2N2222A

LG color tv Circuit Diagram schematics

IC HXJ 2038

1N6227

Untitled

B 773 transistor

transistor a13

BT diode

MARKING ra

RC723DP

Untitled

Untitled

C8248

of mosfet BUZ 384

siemens dioden

hafo

VEB mikroelektronik

SE012

500 DKZ

VPA15