transistor F13
Abstract: transistor j210 2N5397 equivalent 2N5397 2N5398 J210 J211 J212
Text: Databook.fxp 1/13/99 2:09 PM Page F-12 F-12 01/99 NJ26L Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts
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NJ26L
2N5397,
2N5398
30ion
transistor F13
transistor j210
2N5397 equivalent
2N5397
2N5398
J210
J211
J212
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PJ32
Abstract: nj132 SMP4117 SMP4339 smpp1086 SMP3824 SMPJ309 interfet SMP3369 SMP4393
Text: Databook.fxp 1/13/99 2:09 PM Page E-2 E-2 01/99 Small Outline Surface Mount Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS IGSS VGS (OFF) Limits Min Max (V) (V) IDSS Conditions VDS ID (V) (nA) Min (V) @IG (µA) Max
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SMP3369
SMP3370
SMP3458
SMP3459
SMP3460
SMP5462
SMPJ174
SMPJ175
PJ32
nj132
SMP4117
SMP4339
smpp1086
SMP3824
SMPJ309
interfet
SMP3369
SMP4393
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2N6449
Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
Text: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current
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2N3821,
2N3822
2N3821
2N6449
MIXER U350
TR320
2N4861
2N4858A
2n4117 equivalent
J231 2N5461
2N6450
CD860
SMP5116
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2N5397
Abstract: SMP5398 2N5398 SMP5397 1na30
Text: Databook.fxp 1/13/99 2:09 PM Page B-20 B-20 01/99 2N5397, 2N5398 N-Channel Silicon Junction Field-Effect Transistor ¥ ¥ ¥ ¥ ¥ ¥ Absolute maximum ratings at TA = 25¡C Low-Noise High Power Gain High Transconductance Mixers Oscillators VHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage
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2N5397,
2N5398
2N5397
SMP5397,
SMP5398
2N5397
SMP5398
2N5398
SMP5397
1na30
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2n4117 equivalent
Abstract: transistor j210 J231 transistor 2N4119 2N4119A J231 2N5461 2N4339 2N4868A J210 SMP4869A
Text: Databook.fxp 1/13/99 2:09 PM Page B-9 B-9 01/99 2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers ¥ Ultra-High Input Impedance Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage
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2N4117,
2N4117A,
2N4118,
2N4118A,
2N4119,
2N4119A
2N4117
2N4117A
2N4118
2N4118A
2n4117 equivalent
transistor j210
J231 transistor
2N4119
2N4119A
J231 2N5461
2N4339
2N4868A
J210
SMP4869A
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J212
Abstract: SMPJ212 1NA15
Text: Databook.fxp 1/13/99 2:09 PM Page B-57 B-57 01/99 J212 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifier ¥ General Purpose Amplifier Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current
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NJ26L
226AA
SMPJ212
J212
SMPJ212
1NA15
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC T3 D • D5GM33Ö G0037S7 3 ■ ALGR T-91-01 P R O C E S S N J26L Process NJ26L N-Channel Junction Field-Effect Transistor Process NJ26L is an N-channel junction fietdeffect transistor designed for general-purpose, lownolse, high-galn applications not requiring high
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D5GM33Ã
G0037S7
T-91-01
NJ26L
NJ26L
-R009
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2N5396
Abstract: 2n5397
Text: 9-97 B 20 2N5397, 2N5398 N -C H A N N E L S IL IC O N J U N C T IO N FIELD-EFFECT T R A N SIST O R LOW NOISE HIGH POWER GAIN HIGH TRANSCONDUCTANCE MIXERS OSCILLATORS VHF AMPLIFIERS Absolute maximum ratings at T* * 25"C Reverse Gate Source & Reverse Gate Drain Voltage
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2N5397,
2N5398
2N5397
000074G
2N5396
2n5397
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Untitled
Abstract: No abstract text available
Text: SPRAGUE/SEMICOND GROUP 85 14 01 9 SPRAGUE. ^3 D • flS13A5Q Q003b i o T " | i S E M I C O N D S / ICS 9 3 D 0 3 6 1 0 3> 7 ^-Z.f-Z.S SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oh V(BR]GSS
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flS13A5Q
Q003b
TMPF4858A
TMPF4859
TMPF4859A
7MPF4860
TMPF4860A
TMPF4861
TMPF4861A
TMPF4867
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Untitled
Abstract: No abstract text available
Text: SPRAGUE/SEÎ1IC0ND GROUP 8 5 1 4 0 1 9 SP RA G UE . T3 D • SEMICONDS/ IC S 0513050 QD03bll =1 ■ 93D 03611 $ SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C V g S o H Limits Igss V(flR]GSS Conditions
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QD03bll
TMPF5951
TMPF5952
TMPF5953
TMPF6451
TMPF6452
TMPF6453
TMPF6454
TMPFBC264A
TMPFBC264B
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Untitled
Abstract: No abstract text available
Text: SPRAGUE/SEMICOND 8514019 SPRAGUE. GROUP T3 D • f i S 1 3 ôSQ SEMICONDS/ ICS 93D GG 0 3 b l S 03615 b ■ j METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS Switches ELECTRIC/IL CHARACTERISTICS at TA = 25°C ^6S 0ff) Limits Ig s s V(BR)6SS Max. (V) -3 0 _ -8 .0
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2N4393
2N4856
2N4856A
2N4857
2N3824
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tp5950
Abstract: No abstract text available
Text: SPR AGU E/ SE MIC ON D GROUP 8 5 1 4 0 1 9 SPRAGUE, T3 D • 0513350 00Q3b01 S E M I C O N D S / ICS h M 93D 03601 J> 7 ^ ^ -Z .S - PLAST1C-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C VgS oH V(BRJGSS Limits
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00Q3b01
TP4858A
TP4659
TP4859A
TP4860
TP4860A
TP4861
TP4861A
TP4867
TP4868
tp5950
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THJU401
Abstract: THJJ300B
Text: " S P R AG UE /S EM IC ON D GROUP 13 D • 6513350 0003562 b ■ 93D 03582 TTF-ZV-ZS 8 5 1 4 0 1 9 SPRAGUE . S E M I C O N D S / ICS JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS al Tfl = 25°C VGS ofl V(BR]GSS Limits Igss
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THJBC264A
THJBC264B
THJBC264C
THJBC264D
THJBF244A
THJBF244B
THJBF244C
THJBF246A
THJBF246B
THJBF246C
THJU401
THJJ300B
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC 85 14019 SPRAGUE. =13 D □SGM33Ô SEM ICO ND S/ IC S D003bl5 5 IALGR 93D 03615 j METAL-CASE JUNCTION FIELD-EFFECT TRA N SISTO R S N-Channel JFETs Switches ELECTRICAL CHARACTERISTICS at TA = 25°C loss V g S o!I) V(BR)G SS Device
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SGM33Ã
D003bl5
2N3824
2N3966
2N3970
2N3971
2N3972
2N4091
2N4092
2N4093
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Untitled
Abstract: No abstract text available
Text: AL L E G R O M I C R O S Y S T E M S 8 5 1 4 0 1 9 SPRA GU E. INC T3 D • 0SGM33fl D D O B b l l S E M I C O N D S / ICS ö ■ ALGR 93 D 03611 $ 7 = Z?-ZS SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs E LE C T R IC A L CH ARACTERISTICS at Tfl = 25°C
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0SGM33fl
TMPF5951
TMPF5952
TMPF5953
TMPF6451
TMPF6452
TMPF6453
TMPF6454
TMPFBC264A
TMPFBC264B
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MPF103
Abstract: J300B J112A MPF104 MPF105 BF244A BF246A NJ32 TP5951 TP5952
Text: PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C V g S[0 1 VtBHJGSS Conditions Limits Ig s s Oh loss Cnss* < w rDS Min. (V) Max. (V) Vos (V) lo (nA) Min. (mA) Max. (mA) G1vos (V) Min. (mS) Max. (mS) -1 5
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TP5951
TP5952
TP5953
TP6449
MPF103
J300B
J112A
MPF104
MPF105
BF244A
BF246A
NJ32
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2N5485
Abstract: TP5668 NJ132 NJ16 TP4858A TP4859 TP4859A TP4860 TP4860A TP4861
Text: SPRAGUE/SEMICOND GROUP 8514019 SPRAGUE, T3 D • 0513350 00Q3b01 SE MI C ON DS /ICS 93D 03601 h M J> 7 ^ ^ -Z .S PLAST1C-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C VgS oH V(BRJGSS Limits Igss Min. (V) IG
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DD03b01
TP4858A
NJ132
TP4859
TP4859A
O-226AA/STYLES
2N5485
TP5668
NJ132
NJ16
TP4860
TP4860A
TP4861
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NJ450
Abstract: nj26 interfet INTERFET BF256B
Text: F8 9 -9 7 Small Outline Surface Mount Package Devices N-CH ANN EL SILICON JUNCTION FIELD-EFFECT TRANSISTORS Device Type BVg s S V gS(OFF) >g s s Min (V) m Max (nA) SMP BF244C SMP BF246A SMP BF246B SMP BF246C SMP BF256A -3 0 -2 5 -2 5 -2 5 -3 0 -1.0 -1.0
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BF244C
BF246A
BF246B
BF246C
BF256A
BF256B
BF256C
SMPJ108
SMPJ109
SMPJ110
NJ450
nj26 interfet
INTERFET
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BC2640
Abstract: smp6453
Text: IN T E R F E T CORP »F|Ma5bfiflfl o o o o iza i SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS a tT A = 2S°C . ^BHICSS - - Device Type Min. V fti le ItiA) Max. (nA) SMP 5951 SMP 5952 SMP 5953 SMP 6451 SMP 6452
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BC264A
BC264B
6C264C
BC2640
BF244A
BF244B
BF244C
BF246A
BF246B
BF246C
smp6453
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TMPFBF244C
Abstract: tmpfj308 NJ32 TMPF5951 TMPF5952 TMPF5953 TMPF6451 TMPF6452 TMPF6453 TMPF6454
Text: SPRAGUE/SEÎ1IC0ND 8514019 SPRAGUE. GROUP T3 D • SEMICONDS/ ICS 0513050 93D QD03bll 03611 =1 ■ $ SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C VgS oH V(BR]GSS Limits Igss Device Type Min. (V)
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0D03hll
TMPF5951
TMPF5952
TMPF5953
TMPFBF244C
tmpfj308
NJ32
TMPF6451
TMPF6452
TMPF6453
TMPF6454
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Untitled
Abstract: No abstract text available
Text: "H INTER F E T CORP DE I 4fl21.ßflñ DOOOQflfl 5 METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS ’ v.; ">r ELECTRICAL CHARACTERISTICS al TA = 25°C ? ' V BRJGSS limits less @Vgs (V Min. (V) Max. (V) 2N3824 -50 -1.0 -0.1 -30 -30 -1.0 -0.1 -20 2N3966 2N3970
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2N3824
2N3966
2N3970
2N3971
2N3972
2N4091
2N4092
2N4093
2N4391
2N4392
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AUO-PL321.15
Abstract: itt+zx+15 DIODE+C06+15 murata+filter+cfj455k+15 B456+F+15 zener+phc+15
Text: ALL E GR O M I C R O S Y S T E M S Ö514019 SPRAGUE. INC ^3 D • 05D433S SEMICONDS / ICS 0 0 Q 3 h l 0 b ■ ALGR 93D 03610 ]> SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs E LE C T R IC A L CH ARACTERISTICS at TA = 25°C VgS OH Limils
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05D433S
TMPF4858A
TMPF4859
TMPF4859A
TMPF4860
TMPF4860A
TMPF4861
TMPF4861A
TMPF4867
TMPF4868
AUO-PL321.15
itt+zx+15
DIODE+C06+15
murata+filter+cfj455k+15
B456+F+15
zener+phc+15
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Untitled
Abstract: No abstract text available
Text: INTER F E T CORP 2bE D • MÖZbflßö OGOGlö^ Q ■ T-'q -(fO A3 N-Channel JFETs Switches ELECTRICAL CHARACTERISTICS at TA = 25°C 'os; V G Siom VfBmcss Device Type Limits Ig s s Conditions ISV«* (V Min (V) M u. (V) - 0 .1 - 0 .1 -0 3 - 0 .3 - 0 .3 -30
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2N3824
2N3966
2N3970
2N3971
2N3972
2N4091
2N4092
2N4093
2N4391
2N4392
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NJ132
Abstract: THJ4416A THJ4856 THJ4856A THJ4857 THJ4857A THJ4858 THJ4858A
Text: AL L E GR O M I C R O S Y S T E M S 8 5 140 19 S P R A G U E . INC T3 D • 050433Ô S E MI C OND S / I C S 93D 0 0 0 3 5 0 0 1 ■ ALGR 0 3 5 8 0 2 > T -?-Z 5 JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C
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G5D433Ã
DD03Sa0
T-22-25
THJ4416A
THJ4856
NJ132
THJ4856A
NJ26L
THJ5432
NJ903
NJ132
THJ4857
THJ4857A
THJ4858
THJ4858A
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