Untitled
Abstract: No abstract text available
Text: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features 0.40+0.10 ñ0.05 0.16+0.10 -0.06 M Di ain sc te on na tin nc ue e/ d 0.4±0.2 5° 2
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2SD0814,
2SD0814A
2SD814,
2SD814A)
2SD0814
2SD0814A
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Untitled
Abstract: No abstract text available
Text: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features M Di ain sc te on na tin nc ue e/ d 0.40+0.10 ñ0.05 5° 0.4±0.2 2.8+0.2 -0.3 2 1 (0.95) (0.95)
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2SD0814,
2SD0814A
2SD814,
2SD814A)
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matsushita Transistor hFE CLASSIFICATION Marking
Abstract: IC NE 556 2SD0814 2SD0814A 2SD814 2SD814A
Text: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification M Di ain sc te on na tin nc ue e/ d Unit: mm • Features 0.4±0.2 5° 2 1 (0.95) (0.95) 1.9±0.1 ■ Absolute Maximum Ratings
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2SD0814,
2SD0814A
2SD814,
2SD814A)
matsushita Transistor hFE CLASSIFICATION Marking
IC NE 556
2SD0814
2SD0814A
2SD814
2SD814A
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A1000-REV00k9040-IE
Abstract: AX-REM01K9050-IE A1000-REV00k6050-IE a1000-fia3071-re A1000FIA3105RE A1000-FIV3005-RE AX-FIM1024-RE
Text: Listino prezzi Validità 1° GENNAIO 2014 industrial.omron.it /67/238731'</32+ +22'/3 ";CI?A; A?;CI;, ? ? :;:?97I?7AH;IIDG;;A;IIGDC?9D G;AE;G9?G9J?IDHI7BE7ID B?9GD?CI;GGJIIDG? ;99
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2N6786U
Abstract: No abstract text available
Text: 2N6782U, 2N6784U and 2N6786U Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET compliant Qualified per MIL-PRF-19500/556 DESCRIPTION This family of 2N6782U, 2N6784U and 2N6786U switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in thru
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2N6782U,
2N6784U
2N6786U
MIL-PRF-19500/556
2N6786U
O-205AF
2N6782,
2N6784
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IRFE210
Abstract: JANTX2N6784U JANTXV2N6784U
Text: Provisional Data Sheet No. PD - 9.1722 IRFE210 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6784U HEXFET TRANSISTOR JANTXV2N6784U [REF:MIL-PRF-19500/556] N-CHANNEL Ω , HEXFET 200Volt, 1.5Ω Product Summary The leadless chip carrier LCC package represents
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IRFE210
JANTX2N6784U
JANTXV2N6784U
MIL-PRF-19500/556]
200Volt,
IRFE210
JANTX2N6784U
JANTXV2N6784U
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2N6782U
Abstract: IRFE110 JANTX2N6782U JANTXV2N6782U "TO-39 package"
Text: PD - 9.1699A IRFE110 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6782U HEXFET TRANSISTOR JANTXV2N6782U [REF:MIL-PRF-19500/556] N-CHANNEL Ω , HEXFET 100Volt, 0.60Ω Product Summary The leadless chip carrier LCC package represents the logical next step in the continual evolution of
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IRFE110
JANTX2N6782U
JANTXV2N6782U
MIL-PRF-19500/556]
100Volt,
2N6782U
IRFE110
JANTX2N6782U
JANTXV2N6782U
"TO-39 package"
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2N6786
Abstract: 2n6782 2N6784 JANTX MOSFET 2N6782 2N6782 JANTX DD 127 D transistor 2N6782 equivalent
Text: 2N6782, 2N6784 and 2N6786 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/556 DESCRIPTION This family of 2N6782, 2N6784 and 2N6786 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a low
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2N6782,
2N6784
2N6786
MIL-PRF-19500/556
2N6786
2n6782
2N6784 JANTX
MOSFET 2N6782
2N6782 JANTX
DD 127 D transistor
2N6782 equivalent
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DD 127 D TRANSISTOR
Abstract: MARKING CODE 556f 2N6782 2N6782U 2N6784 2N6786
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 March 1998. INCH-POUND MIL-PRF-19500/556F 24 December 1997 SUPERSEDING MIL-S-19500/556E 9 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
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MIL-PRF-19500/556F
MIL-S-19500/556E
2N6782,
2N6782U,
2N6784,
2N6784U,
2N6786,
2N6786U
DD 127 D TRANSISTOR
MARKING CODE 556f
2N6782
2N6782U
2N6784
2N6786
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high power 400Volt mosfet transistor
Abstract: IRFE310 JANTX2N6786U JANTXV2N6786U
Text: PD - 91782 IRFE310 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786U HEXFET TRANSISTOR JANTXV2N6786U [REF:MIL-PRF-19500/556] N-CHANNEL Ω , HEXFET 400Volt, 3.6Ω Product Summary The leadless chip carrier LCC package represents the logical next step in the continual evolution of
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IRFE310
JANTX2N6786U
JANTXV2N6786U
MIL-PRF-19500/556]
400Volt,
high power 400Volt mosfet transistor
IRFE310
JANTX2N6786U
JANTXV2N6786U
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Untitled
Abstract: No abstract text available
Text: PD - 91782 IRFE310 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786U JANTXV2N6786U HEXFET TRANSISTOR [REF:MIL-PRF-19500/556] N-CHANNEL Ω , HEXFET 400Volt, 3.6Ω Product Summary The leadless chip carrier LCC package represents the logical next step in the continual evolution of
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IRFE310
JANTX2N6786U
JANTXV2N6786U
MIL-PRF-19500/556]
400Volt,
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Power Semiconductor Applications Philips Semiconductors
Abstract: schematic diagram induction bearing heater "Power Semiconductor Applications" Philips BUK854-500IS "CHAPTER 1 Introduction to Power Semiconductors" philips schematic induction cookers schematic diagram igbt inverter welding machine BC548 TRANSISTOR REPLACEMENT TOPFET IN IGNITION COIL BUK 546
Text: Automotive Power Semiconductor Applications Philips Semiconductors CHAPTER 5 Automotive Power Electronics 5.1 Automotive Motor Control including selection guides 5.2 Automotive Lamp Control (including selection guides) 5.3 The TOPFET 5.4 Automotive Ignition
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74a diode
Abstract: No abstract text available
Text: 2N6782LCC4 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 VDSS ID(cont) RDS(on)
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2N6782LCC4
00A/ms
300ms,
74a diode
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Untitled
Abstract: No abstract text available
Text: IRFE130 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 VDSS ID(cont) RDS(on) 100V
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IRFE130
300ms,
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transistor BF 697
Abstract: BSV52 BF 273 transistor
Text: > <0 ID . Di scret e POW ER & Sig n a l Technologies National Semiconductor" BSV52 Mark: B2 NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 m A to 100 mA. Sourced from Process 21. Absolute Maximum Ratings*
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BSV52
0023fif
bS01130
transistor BF 697
BSV52
BF 273 transistor
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transistor BF 697
Abstract: BF 273 transistor transistor l81
Text: BSV52 . Æ ^Æ N a t i o n a l Di scret e POWER & Signal Technologies Semiconductor BSV52 Mark: B2 NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 m Ato 100 mA. Sourced from Process 21. Absolute Maximum Ratings*
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BSV52
bSD113Q
bS01130
transistor BF 697
BF 273 transistor
transistor l81
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1722 International IOR Rectifier IRFE210 dv/dt R A TED J ANTX2N6784U HEXFET TRANSISTOR JANTXV2N6784U [REF: M IL-PRF-19500/556] R E P E T IT IV E A VA LA N CH E A N D N -C H A N N E L 200Volt, 1.512, HEXFET Product Summary
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IRFE210
ANTX2N6784U
JANTXV2N6784U
MIL-PRF-19500/556]
200Volt,
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Untitled
Abstract: No abstract text available
Text: PD - 9.1699A International IOR Rectifier ir f e u o dv/dt R A T E D JANTX2N6782U HEXFET TRANSISTOR JANTXV2N6782U [REF:MIL-PRF-19500/556] R E P E T IT IV E A V A L A N C H E A N D N -C H A N N E L Product Summary 100Volt, 0.60Î2, HEXFET The leadless chip carrier LCC package represents
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JANTX2N6782U
JANTXV2N6782U
MIL-PRF-19500/556]
100Volt,
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1722 International IQ R Rectifier IRFE210 R EPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6784U HEXFET TRANSISTOR JANTXV2N6784U [REF:MIL-PRF-19500/556] N -C H A N N E L 200Volt, 1.5Q, HEXFET Product Summary T he le ad less chip c a rrie r LC C p a cka g e re p re se n ts
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IRFE210
JANTX2N6784U
JANTXV2N6784U
MIL-PRF-19500/556]
200Volt,
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1699 International IO R Rectifier ir f e h o JANTX2N6782U HEXFET TRANSISTOR JANTXV2N6782U [REF:MIL-PRF-19500/556] R E P E T IT IV E A V A LA N C H E A N D d v /d t R A TED N -C H A N N E L Product Summary 100V olt,0.60ii, HEXFET
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JANTX2N6782U
JANTXV2N6782U
MIL-PRF-19500/556]
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transistor di 556
Abstract: SGSP477
Text: T SGS-THOMSON ^7# MÊfôimiiËïrMMÊI SGSP477 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS on SGSP477 200 V 0.17 fi Id 20 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH CURRENT - FOR TELECOMM POWER SUPPLIES • ULTRA FAST SWITCHING
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SGSP477
O-218
transistor di 556
SGSP477
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D2080
Abstract: SGSP477
Text: SGS-TUOMSON SGSP477 llö » [ a i g ir C M O ( g § N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP477 V dss 200 V ^DS(on 0.17 n •d 20 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH CURRENT - FOR TELECOMM POWER SUPPLIES • ULTRA FAST SWITCHING
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SGSP477
SGSP477
O-218
D2080
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SGSP477
Abstract: bg-25V SMPS CIRCUIT DIAGRAM 5V 20A AY5V tcl tv circuit
Text: f Z 7 SGS-THOMSON s6 s - th o m s o n ^7# SG SP477 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP477 VDss 200 V ^D S on 0.17 ß b 20 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH CURRENT - FOR TELECOMM POWER SUPPLIES • ULTRA FAST SWITCHING
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SGSP477
SGSP477
bg-25V
SMPS CIRCUIT DIAGRAM 5V 20A
AY5V
tcl tv circuit
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VQE 23 E
Abstract: MG1200V1US51
Text: TOSHIBA MG1200V1US51 TOSHIBA GTR MODULE SILICON N-CHANNEL IGBT M G 1 2 0 0 V 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS FEATURES • High Input Impedance • Enhancement Mode • Electrodes are isolated from case. EQUIVALENT CIRCUIT
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MG1200V1US51
VQE 23 E
MG1200V1US51
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