transistor et 454
Abstract: SK 50 et 12 transistor et 460 sk7650 SK129-25 leistungstransistoren ON SEMICONDUCTEUR A102A STS SOT SK454
Text: A Strangkühlkörper für Leiterplattenmontage Extruded heatsinks for PCB mounting Dissipateurs extrudés pour montage PCB 34,9 16 12,7 1,5 3,2 6,5 18,3 P 25,4 E Ø 2,3 max. …STC 6,5 1,5 6 max. 3 4,5 max. 10,8 25,4 Ø7 M3 Ø6 Ø 2,3 max. …STIC …STCB
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Heatsinks sk 489
Abstract: sk514 sot823 transistor et 460 SK104a THF 104 THF 185 boitier to 126 SOT TO-126 mounting AT20N
Text: A Retaining springs for transistors Lochbild 4 6,3 11,7 14 Perforations 10 THF 129 TO 220 4 für Kühlkörper für Blechstärke pour épaisseur de tôle 1 – 2 mm FS SK 129 A 105/106 1 – 2 mm FS SK 104 A 97/98 1 – 2 mm FS TO 3 P SK 409 A 99/100 TO 247
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FX2N 64mr manual
Abstract: FX2N-48MT FX2N-128MR mitsubishi plc FX2n-32mt SERIES FX2N-64MT fx2n-48mr FX2N-1PG MANUAL Mitsubishi MELSEC FX2N-80MR FX2N-80MT Mitsubishi MELSEC FX2N-80MR-DS
Text: HARDWARE MANUAL FX2N SERIES PROGRAMMABLE CONTROLLERS FX2N Series Programmable Controllers ENG Foreword • • • FRE Préface • • • GER • • Dieses Handbuch enthält Texte, Abbildungen und Erläuterungen zur korrekten Installation und Bedienung der FX2N-SPS und sollte vor einer Installation oder einem Einsatz des Gerätes gelesen werden. Die Inhalte müssen verstanden sein.
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JY992D66301H
J24532
FX2N 64mr manual
FX2N-48MT
FX2N-128MR
mitsubishi plc FX2n-32mt SERIES
FX2N-64MT
fx2n-48mr
FX2N-1PG MANUAL
Mitsubishi MELSEC FX2N-80MR
FX2N-80MT
Mitsubishi MELSEC FX2N-80MR-DS
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F3S-A482
Abstract: omron f3sa F3S-A321 F3S-A322 emetteur 93420 F3S-A242 F3S-A082 F3S-A162 BB97
Text: BARRIERE IMMATERIELLE F3S-A II Le plus haut niveau de sécurité pour la détection des doigts et mains des opérateurs en zones dangereuses Conforme aux directives européennes. Convient aux machines les plus dangereuses catégorie de sécurité type 4, conforme EN 61496-1,-2 prEN 50100-1,-2 ,
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photo transistor array
Abstract: ET7272 Optolab ET7272 ET8001
Text: ET 8001 6-Channel precision amplifier with automatic hysteresis tracking function for encoders Features • Designed for optical encoders and light barriers • Automatic Hysteresis monitoring and tracking function generates precise digital outputs • Phase stable outputs over a wide
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ET8001
550mV
450mV
photo transistor array
ET7272
Optolab ET7272
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brochage des circuits integres
Abstract: hacheur photocoupleur relais schema Commande moteur Relais CPV240 radiateurs pour thyristors de puissance CX240D5 D1D20 crydom hd4850
Text: L’EXPERT MONDIAL EN MATIÈRE DE COMMUTATION STATIQUE Relais statiques montés sur circuit imprimé Relais statiques montés sur panneau Relais statiques montés sur rail DIN Modules auxiliaires Modules d'Entrées/Sorties statiques Relais statiques t Modules auxiliaires t Modules E/S
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GS 069 LF
Abstract: HCA-120 BUK637-500A BUK637-500B BUK637-500C
Text: N AMER P H I L IPS /D IS CR ET E 55E D • Lb53T31 OQSQbôO S ■ PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C T - 3 ‘M S ' GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a
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BUK637-500A
BUK637-500B
BUK637-500C
BUK637
-500A
-500B
-500C
T-39-15
GS 069 LF
HCA-120
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BCX71GR
Abstract: BCX71JR h22e H21E BCX71KR
Text: PLESSEY SEMICOND/DISCRETE : OB D eT | 7250533 OOObbMb T f PIMP silicon planar small signal transistor BCX71 ABSOLUTE MAXIMUM RATINGS Parameter Collector-Emitter Voltage Collector-Emitter Voltage Symbol Emitter-Base Voltage BCX71 V CES V V CEO -45 V V ebo -5
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BCX71
BCX71
BCX71GR
BCX71JR
h22e
H21E
BCX71KR
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bcy580
Abstract: BCY590 transistor h21e SCHEMA BCY59 BCY 59
Text: *BCY 58 BCY59 NPN SILICON TRANSISTOR TRANSÌSTOR NPN S ILIC IU M Compì, of BCY 78 and BCY 79 Preferred device Dispositif recommandé • For switching and amplifier - Pour com m utation et am plification V CEO 32 V 45 V BCY 58 •c 200 mA BCY 59 Maximum power dissipation
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BCY59
lB2ai10mA
bcy580
BCY590
transistor h21e
SCHEMA
BCY59
BCY 59
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NE32584C-T1
Abstract: nec 3435 transistor am 4428
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.
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NE32584C
NE32584C-T1A
NE32584C-T1
nec 3435 transistor
am 4428
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TRANSISTOR sd 346
Abstract: Lautsprecher RFT L 2911 Lautsprecher LP C 4804 transistor TRANSISTOR b 882 p rft lautsprecher transistor GC 228 Transistor B 886 service-mitteilungen RFT KR 650
Text: SERVICE-MITTEILUNGEN VEB RFT INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN radio - television I Ausgabe 1988 Seite 8 1-4 Mitteilung aus dem VEB Fernsehgerätewerk Staßfurt Sicherheitskontrollen für 4oooer Parbfernsengeräte Nachfolgend geben wir Hinweise, welche speziellen Kontrollen
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untersc0037
TRANSISTOR sd 346
Lautsprecher RFT L 2911
Lautsprecher LP
C 4804 transistor
TRANSISTOR b 882 p
rft lautsprecher
transistor GC 228
Transistor B 886
service-mitteilungen
RFT KR 650
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Untitled
Abstract: No abstract text available
Text: BCX70J NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T„=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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BCX70J
OT-23
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golf cart motor circuits
Abstract: 2SC3866 transistor 2SD921 2sc3866 equivalent 2SC3866 sewing motor ET382 2SC3030 2SC3505 2SC3549
Text: M O LD TYPE BIPOLAR TRANSISTORS Ratings and Specifications Q High v o lta g e high speed sw itch in g transistors • T h e transistor is best suited fo r use w ith 240V AC inp u t sw itching regulators. • Can o p e rate w ith in th e 30kHz range ty p e
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30kHz
2SC3505
O-220F17
2SD2047
2SC3866
2SC3549
O-220AB
2SD1158
golf cart motor circuits
2SC3866 transistor
2SD921
2sc3866 equivalent
sewing motor
ET382
2SC3030
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2SC4538 equivalent
Abstract: 2sc3866 equivalent 2SC3030 2SC3505 2SC3549 2SC3866 2SC4419 2SC4538 2SD2431 2SD1049
Text: M O LD TYPE BIPOLAR TRANSISTORS Ratings and Specifications Q High v o lta g e high speed sw itch in g transistors • T h e transistor is best suited fo r use w ith 240V AC inp u t sw itching regulators. • Can o p e rate w ith in th e 30kHz range ty p e
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30kHz
2SC3505
O-220F17
2SD2047
2SC3866
2SC3549
O-220AB
2SD1158
2SC4538 equivalent
2sc3866 equivalent
2SC3030
2SC4419
2SC4538
2SD2431
2SD1049
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Untitled
Abstract: No abstract text available
Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date: 22rid/Nov. '01 i MITSUBISHI RF POWER MODULE - RA45H4452M ELETROSTATIC SENSITIVE DEVICES Silicon MOS FET Power Amplifier, 440~520MHz 45W MOBILE RADIO OUTLINE DRAWING MAXIMUM RATINGS SYMBOL V dd
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22rid
RA45H4452M
520MHz
25deg
50ohm
440-520MHz
ZI-50ohm
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Untitled
Abstract: No abstract text available
Text: 3 M A E «? H M - 6 5 6 4 2 /8 8 3 8K x 8 Asynchronous CMOS Static RAM August 1996 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65642/883 is a CMOS 8192 x 8-bit Static Random
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MIL-STD883
HM-65642/883
80C86
80C88
43D2271
HM-65642/883
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LC marking code transistor
Abstract: transistor marking code BCW61A BCW61 BCW61B BCW61C BCW61D TRANSISTOR BCW61 marking code ER transistor
Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation
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BCW61A/B/C/D
KS5086
OT-23
BCW61B
BCW61C
BCW61
-50mA,
-10mA,
LC marking code transistor
transistor marking code
BCW61A
BCW61D
TRANSISTOR BCW61
marking code ER transistor
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TP6N60
Abstract: 6N60
Text: *57 SGS-THOMSON iL iO M K I M T P 6 N 60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE M TP6N60 V dss R DS on Id 600 V < 1.2 a 6.8 A . TYPICAL RDs(on) = 1 f i • AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C
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TP6N60
TP6N60
6N60
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transistor mark BA
Abstract: No abstract text available
Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol
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BCW61A/B/C/D
MMBT5086
BCW61
BCW61C
BCW61D
BCW61B
transistor mark BA
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1736d
Abstract: No abstract text available
Text: 6DI75M-050 75A 'U ± '< h - y < 7 _ Y = 7 > '> ^ ^ ì>d. - ì V l £ f ' :£ ï > d , - ) v O utline Draw ings POWER TRANSISTOR MODULE F e a tu r e s • f f ih FE H igh DC C u rre n t Gain • H ig h S peed S w itc h in g : A p p lic a tio n s • ? G eneral P urpose Inverter
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6DI75M-050
e9Ti30S3
1736d
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QM300HA-2H
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-2H lc V cex Collector current. Collector-emitter voltage. DC current gain . hre Insulated Type UL Recognized 30QA j 1000V 75 Yellow Card No. E80276 <N
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QM300HA-2H
E80276
E80271
rQrr10'
QM300HA-2H
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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bd7995
Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
Text: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND
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8366IT
STR910A
B26000
B26050
B2G010
B26010
B2701D
9SM102/V4T7
bd7995
P8243
178M15
transistor b492
TRANSISTOR BJ 131-6
P8035
sk 7443
1334 diode
LM1456
LM 8361
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DIODE ED
Abstract: HFA15T860 HFA15TB60 DIODE ITT 310 an967 ULTRA-FAST RECOVERY RECTIFIER DIODES NEGATIVE calculation of IGBT snubber Calculation of major IGBT operating parameters AN-967 AN-983
Text: International S 3 Rectifier yIPPLICMION NOTES ' p u b l is h e d b y 'I n t e r n a t i o n a l r e c t i f i e r , 233 kan sa s st r e e t , el seg u n d o , ca 90245. 3 10 13 2 2 - 3 3 3 1 A N -9 8 9 The HEXFRED Ultrafast Diode in Power Switching Circuits
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AN-989
0492-M10
322433t,
DIODE ED
HFA15T860
HFA15TB60
DIODE ITT 310
an967
ULTRA-FAST RECOVERY RECTIFIER DIODES NEGATIVE
calculation of IGBT snubber
Calculation of major IGBT operating parameters
AN-967
AN-983
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