TRANSISTOR F 506 Search Results

TRANSISTOR F 506 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR F 506 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
GaAs FET HEMT Chips Abstract: FHX35 FHX35X eudyna GaAs FET RF Transistor Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended	Original	PDF	FHX35X 12GHz FHX35X 2-18GHz Pow4888 GaAs FET HEMT Chips FHX35 eudyna GaAs FET RF Transistor
Untitled Abstract: No abstract text available Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended	Original	PDF	FHX35X 12GHz FHX35X 2-18GHz
fujitsu hemt Abstract: FHX35X rm 702 627 Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended	Original	PDF	FHX35X 12GHz FHX35X 2-18GHz Power4888 fujitsu hemt rm 702 627
31495MO Abstract: transistor za Text: O rdering num ber: EN 5063 No.5063 SA % Y O i I I _ I PNP Epitaxial Planar Silicon Transistor With bias FC155 resistances PNP Epitaxial Planar Silicon Transistor Constant-Current Circuit Applications F eatures	OCR Scan	PDF	FC155 -----15V --10mA --400mA --50mA --200mA, --200mA FC155 31495MO transistor za
TRANSISTOR 40 Abstract: BUK474-800A Text: -7 ^ 3 1 Philips Components Data sheet status Preliminary specification date of issue March 1991 - C f f BUK474-800A/B PowerMOS transistor Replaces BUK444-800A/B PHILIPS INTERNATIONAL G EN E R A L DESCRIPTION N-channel enhancement mode field-effect power transistor in a	OCR Scan	PDF	BUK474-800A/B BUK444-800A/B 711002b BUK474 -800A -800B T-39-09 BUK474-800A/B 0044b33 TRANSISTOR 40 BUK474-800A
JE 800 transistor Abstract: UPA76ha upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s Text: NEC W T / \ M À f 7 'S ' h =7 Com pound Transistor ¿¿PA76HA t: ^ n p n x >; □ h^ * N PN Silicon Epitaxial Compound Transistor Differentia! Amplifier ^ f^ H l/PA C K A G E DIMENSIONS if t * / F E A T U R E S O l c h i p m iÊT ibètztb , -< 714 / V b e = 2 m V T Y P . )	OCR Scan	PDF	uPA76HA JE 800 transistor upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s
BF180 Abstract: s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504 Text: * B F 180 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN S ILIC IU M , PLAN A R % Preferred device D is p o s itif recom m andé The NPN planar transistor BF 180 is intended for use in UHF amplifier stages of T V receivers AGC controlled stages . Le transistor planar NPN BF 180 est destiné à être u ti	OCR Scan	PDF	BF180 BF180 s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504
upa74ha Abstract: UPA74 PA74H gw 348 PA74HA k 2445 transistor Text: NEC Aj i ï T / \ W V -7 9 Com pound Transistor f x N L it ¿¿PA74HA P N X + □ ] h I M ift fé S H f& K iJ t I B fll NPN Silicon Epitaxial Compound Transistor Differential Amplifier #Ä /FEA TU RES O 1 chip ffîiè 'C Jb h flìsb , - 4 T 1 Ë J V B E = 2 mV T Y P . )	OCR Scan	PDF	uPA74HA UPA74 PA74H gw 348 PA74HA k 2445 transistor
3SK177 Abstract: U7210 transistor d 2389 52S marking Text: MES FIELD EFFECT TRANSISTOR 3SK177 RF A M P. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 P IN M IN I MOLD FEATURES PACKAGE DIMENSIONS • Suitable fo r use as R F a m p lifie r in U H F T V tuner. in millimeters • L o w C ,; : 0 .0 2 pF TYP.	OCR Scan	PDF	3SK177 3SK177 U7210 transistor d 2389 52S marking
transistor BF 506 Abstract: BF 194 transistor BF506 transistor bf 194 transistor bf 193 transistor f 506 9BMS pnp vhf transistor Text: BF 506 SILICON PLANAR PNP VH F O SC ILLA T O R M IX E R The B F 506 is a silicon planar epitaxial PN P transistor in Jedec T O -9 2 plastic package. It is intended for use as mixer and oscillator in the V H F range. However, it may also be used as not controlled preamplifier at low noise.	OCR Scan	PDF	TQ-92 transistor BF 506 BF 194 transistor BF506 transistor bf 194 transistor bf 193 transistor f 506 9BMS pnp vhf transistor
2SJ153 Abstract: No abstract text available Text: M O S Field Effect Pow er Transistor 2SJ153 P f^ ;U / N ° 7 - M O S FET I i f f l 2SJ153 i, MOS FET T, 5 V H i * IC (c J; è Æ æ œ S O T t ë f r i S i i t X ' f * < , y w / 'i # K, y x ' f •/ f - > 7 f > X f t W B 0 ( T O : mm „ i , f f i - i x T ^ S fc * > ,	OCR Scan	PDF	2SJ153 2SJ153
MRF627 Abstract: MRF-627 vk200* FERROXCUBE Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 0.5 W - 470 MHz HIGH FREQUENCY TRANSISTOR 2 N P N S ILIC O N NPN SILICON HIGH FREQUENCY TRANSISTOR . . . d e s ig n e d f o r 1 2 .5 V o l t U H F la rg e -s ig n a l a m p lif ie r a p p lic a t io n s in	OCR Scan	PDF	VK200 20/4B MRF627 MRF627 MRF-627 vk200* FERROXCUBE
Transistor C G 774 6-1 Abstract: C G 774 6-1 1041T060 Text: I MOTOROLA SC XSTRS/R F 4bE » • b3b?2SM 00=14722 T -3 MOTOROLA 3 ' 0 T ■flOTb 5 ■ I SEMICONDUCTOR I TECHNICAL DATA The RF Line HIGH FREQUEN CY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICO N designed specifically for broadband applications requiring low	OCR Scan	PDF
t1c8 Abstract: 2sk459 2SK45 JE 33 T460 Text: NEC m MOS Field E ffe c t P o w e r T r a n s is t o r + T f x r x 2SK459 FET I t f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK459ii, FET ^ • ^ E I/ P A C K A G E DIMENSIONS Unit '•mm T, S JS S D C -D C ^ v a -^, K y - f ^*4: ¿ f w a i i j f f l t L T f	OCR Scan	PDF	2SK459 2SK459Ã t1c8 2sk459 2SK45 JE 33 T460

BUK474 Abstract: BUK474-800A BUK474-800B 3909 Text: Philips Components Data sheet status Prelim inary specification date of issue March 1991 - 7 ^ 3 9 -— C f? BUK474-800A/B PowerMOS transistor Replaces B U K 4 4 4 -8 0 0 A /B PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a	OCR Scan	PDF	BUK444-800A/B PINNING-SOT186A BUK474-800A/B 711002b BUK474 -800A -800B BUK474-800A BUK474-800B 3909
transistor BF 506 Abstract: bf506 wl SOT-23 Text: TELEFUNKEN ELECTRONIC filC D • A'^QQ'Jb 0005513 'i ■ AL6G ^ 7 2 / ~ TTIdilFlLDMDSIKl electronic \| B F 506 Creative Technologies * Silicon PNP RF Transistor Applications: Oscillator-, mixer and uncontrolled pre-amplifier stages up to 300 MHz Features: • Small feedback capacitance	OCR Scan	PDF	569-GS transistor BF 506 bf506 wl SOT-23
bTI51 Abstract: fsjc F4CJ 2SJ209 TF230 Text: 5s—S ,T NEC • 2/— f~~ M O S Field Effect Transistor A l? r / v f7 2SJ209 MOS FET X ' f ' y & 2 S J 2 0 9 l i P f - ^ ^ ^ * i ^ M O S FETT", 5 < fc > yt > ^M O S FET 7 M ? T f F R K 2.8 ±0.2 t o IÌ.X4 "/r &0, t ' ^ / K U S S - 1.5 L T ^ iiT 't o I-	OCR Scan	PDF	2SJ209 IEI-620) bTI51 fsjc F4CJ 2SJ209 TF230
TRANSISTOR J 5804 NPN Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.	OCR Scan	PDF	2SC4885 SC-70 TRANSISTOR J 5804 NPN nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
2SK468 Abstract: IR044 T106 Text: NEC M m ^ T / Y T X O S F ie ld E f f e c t P o w e r T r a n s is t o r _ 2SK468 N - ^ ^ U ' ^ - M O S F E T n m m N-Channel MOS Field Effect Power Transistor Switching Industrial Use F E T T ', * A M / P A C K A G E DIMENSIONS W N ^ -v ^ ^ m p cV -M O S	OCR Scan	PDF	2SK468 2SK468Ã 2SK468 IR044 T106
FCK 111 Abstract: SS5100 la 5531 TRANSISTOR BO 346 T108 T46C T-10803 SKs 22 TRANSISTOR marking EP Text: - y - ^ NEC M Com pound Transistor i ï r / v f x & GA1 F4N ^ - f ì & • m m o s < J T X 1& t j i $ : f t M L X ^ t i ' c (R i = 22 k£2, R2 = 47 kQ) c o G N 1 F 4 N t 3 > 7 ° IJ y > 9 'J X i t m T è & 1~c ( T a = 25 °C ) II Marking fê	OCR Scan	PDF
aeg rectifier Abstract: TELEFUNKEN BYW-56 BYW 56 V aeg telefunken Text: 0029426 A E G CQRP ' ' " Al DE \| D D S^ ilg k □□□5bHfl M f~ ' f - Q / _ ¿jy Sinterglass Rectifiers In addition to the switching transistor, every high voltage converter circuit needs a variety of fast, and standard-recovery rectifier diodes for the various commutation, level shifting,	OCR Scan	PDF
2N5943 equivalent Abstract: 2N5943 JOHANSON 2951 Stackpole ferrite Text: MOTOROLA SC X S T R S / R F 4bE D • b3b?2S4 0014103 7 MOTOROLA ■ ■SEMICONDUCTOR TECHNICAL DATA I flOTb P 3 I- 2 3 2N5943 The RF Line 1.2 Gite - 6 0 mAdc NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON . . . designed specifically for broadband applications requiring low	OCR Scan	PDF	2N5943 b3b7S54 2N5943 equivalent 2N5943 JOHANSON 2951 Stackpole ferrite
JE 800 transistor Abstract: 2SK591 JE 33 TT 46 N 800 TC-6070 sje transistor Text: NEC m MOS ^ T iv r x Field E ffe c t P o w e r T r a n s is to r 2SK591 7 -M N ft^ ^ / < i i f f O S FE T l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK591ii, N f t i ' tl'WLB'^7-M O S FETT\ 5 V « « * IC iO ib KWM f - i i : mm	OCR Scan	PDF	2SK591 2SK591( JE 800 transistor 2SK591 JE 33 TT 46 N 800 TC-6070 sje transistor
R096 Abstract: FN1L4Z Text: . SEC r i Ï T 7 / \ f -y-57 • 5 / - H A C om pound Transistor FN 1L4Z i&ifc 11I t P N p n : 4# > 'J=l> Hwm it o/< 4 - to 2 .8 ± 0 .2 Ri =47 kQ O FA 1 L4 Z t 1.5 ? > 7 ° ') / > ? ') T l f f f l T ' ë 0.650 1 ~ t„ ( T a = 25 °C ) m »&	OCR Scan	PDF	CycleS50 R096 FN1L4Z

TRANSISTOR F 506 Search Results

TRANSISTOR F 506 Result Highlights (5)

TRANSISTOR F 506 Datasheets Context Search

GaAs FET HEMT Chips

Untitled

fujitsu hemt

31495MO

TRANSISTOR 40

JE 800 transistor

BF180

upa74ha

3SK177

transistor BF 506

2SJ153

MRF627

Transistor C G 774 6-1

t1c8

BUK474

transistor BF 506

bTI51

TRANSISTOR J 5804 NPN

2SK468

FCK 111

aeg rectifier

2N5943 equivalent

JE 800 transistor

R096