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    TRANSISTOR FREQUENCY 1.5GHZ GAIN 20 DB Search Results

    TRANSISTOR FREQUENCY 1.5GHZ GAIN 20 DB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR FREQUENCY 1.5GHZ GAIN 20 DB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2sc2570

    Abstract: 2SC2570A IC GA-08 2SC2570A-T PA33
    Text: DATA SHEET NPN SILICON TRANSISTOR 2SC2570A HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages. FEATURES • Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA


    Original     		2SC2570A 2SC2570A 2SC2570A-T 500-pcs 2sc2570 IC GA-08 2SC2570A-T PA33 PDF

    TA4020FT

    Abstract: 60GHz transistor 60Ghz TESQ
    Text: TA4020FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4020FT ○ UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm 1.2±0.05 ・Thin Extreme Super mini Quad Package 4pin :TESQ 0.9±0.05 High Gain: • Lead free article |S21e| =15.0dB (@ f=1.5GHz)


    Original     		TA4020FT TA4020FT 60GHz transistor 60Ghz TESQ PDF

    2SC5363

    Abstract: transistor frequency 1.5GHz gain 20 dB
    Text: Transistor 2SC5363 Tentative Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 ● High transition frequency fT. Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment


    Original     		2SC5363 transistor frequency 1.5GHz gain 20 dB PDF

    a1091 transistor

    Abstract: No abstract text available
    Text: Ordering number : ENA1091A 2SC5490A RF Transistor 10V, 30mA, fT=8GHz, NPN Single SSFP http://onsemi.com Features • • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz) Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ


    Original     		ENA1091A 2SC5490A A1091-7/7 a1091 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1075A 2SC5277A RF Transistor http://onsemi.com 10V, 30mA, fT=8GHz, NPN Single SMCP Features • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz) High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz) High cut-off frequency : fT=8GHz typ


    Original     		ENA1075A 2SC5277A A1075-8/8 PDF

    transistor a1275

    Abstract: a1275 transistor IC A1302
    Text: Ordering number:ENN5184A NPN Epitaxial Planar Silicon Transistor 2SC5245 UHF to S-Band Low-Noise Amplifier, OSC Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=10dB typ (f=1.5GHz).


    Original     		ENN5184A 2SC5245 11GHz 2059B 2SC5245] transistor a1275 a1275 transistor IC A1302 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5245A Ordering number : ENA1074 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5245A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). High gain


    Original     		ENA1074 2SC5245A S21e2 A1074-6/6 PDF

    A1074

    Abstract: IM 383 IC 2SC5245A SANYO DC 303 ITR07984 ITR07986 ITR07987 ITR07990
    Text: 2SC5245A Ordering number : ENA1074 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5245A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). High gain


    Original     		2SC5245A ENA1074 S21e2 A1074-6/6 A1074 IM 383 IC 2SC5245A SANYO DC 303 ITR07984 ITR07986 ITR07987 ITR07990 PDF

    IC 431

    Abstract: 2SC5277A SANYO DC 303 ITR08213 ITR08215 ITR08216 ITR08217 120d-22
    Text: 2SC5277A Ordering number : ENA1075 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz).


    Original     		2SC5277A ENA1075 S21e2 A1075-6/6 IC 431 2SC5277A SANYO DC 303 ITR08213 ITR08215 ITR08216 ITR08217 120d-22 PDF

    marking 624 sc-70

    Abstract: transistor 3213
    Text: 2SC5245A Ordering number : ENA1074A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5245A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz) High gain


    Original     		ENA1074A 2SC5245A S21e2 A1074-8/8 marking 624 sc-70 transistor 3213 PDF

    900mhz chip antenna

    Abstract: Q62702-F1576 GMA marking
    Text: BFP 196W NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz


    Original     		900MHz OT-343 Q62702-F1576 Dec-12-1996 900mhz chip antenna Q62702-F1576 GMA marking PDF

    transistor bfp 196

    Abstract: transistor bf 196 Q62702-F1320 GMA marking
    Text: BFP 196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz


    Original     		900MHz OT-143 Q62702-F1320 Dec-13-1996 transistor bfp 196 transistor bf 196 Q62702-F1320 GMA marking PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5277A Ordering number : ENA1075A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz)


    Original     		2SC5277A ENA1075A A1075-8/8 PDF

    Untitled

    Abstract: No abstract text available
    Text: T1G3000532-SM 5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		T1G3000532-SM T1G3000532-SM 30MHz PDF

    marking NP

    Abstract: 2SC3837K 2SC4082 2SC4725 2SC5661 SC-75A T106 T146
    Text: 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Transistors High-Frequency Amplifier Transistor 20V, 50mA, 1.5GHz 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K zExternal dimensions (Unit : mm) 1.2 0.8 1.2 0.32 0.2 (3) 0.13 0to0.1 0.5 0.22 (1) Marking NP AC∗ SMT3 NP AC∗


    Original     		2SC5661 2SC4725 2SC4082 2SC3837K 2SC4725 marking NP 2SC3837K SC-75A T106 T146 PDF

    bfp410

    Abstract: DRO lnb BGA420 transistor frequency 1.5GHz gain 20 dB
    Text: BFP410 NPN Silicon RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency f T = 25 GHz • Pb-free RoHS compliant package


    Original     		BFP410 OT343 bfp410 DRO lnb BGA420 transistor frequency 1.5GHz gain 20 dB PDF

    MARKING SMD TRANSISTOR ADP

    Abstract: smd transistor adp MARKING SMD TRANSISTOR P 2SC3838K
    Text: Transistors SMD Type High-Frequency Amplifier Transistor 2SC3838K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Small rbb'.Cc and high gain. Typ. 4ps 1 0.55 High transition frequency. (Typ. fT= 1.5GHz) +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1


    Original     		2SC3838K OT-23 500MHz MARKING SMD TRANSISTOR ADP smd transistor adp MARKING SMD TRANSISTOR P 2SC3838K PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 196W NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • f j = 7.5GHz F = 1.5 dB at 900MHz


    OCR Scan     		900MHz BFP196W OT-343 Q62702-F1576 900MHz PDF

    st zo 607

    Abstract: ZO 607 MA ZO 607 MA 135 zo 607 transistor zo 607 0124 Z0 607 MN ZO 607 transistor 2SC5275 B/B/CQ 643
    Text: Ordering number: EN5185 2SC5275 NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amp, OSC Applications Features • Low noise : NF=0.9dB typ f = 1GHz . : NF = 1.4dB typ (f= 1.5GHz). • High gain: I S21e I 2= lOdB typ (f= 1.5GHz). • High cutoff frequency : fp = 11GHz typ.


    OCR Scan     		EN5185 2SC5275 10dBtyp st zo 607 ZO 607 MA ZO 607 MA 135 zo 607 transistor zo 607 0124 Z0 607 MN ZO 607 transistor B/B/CQ 643 PDF

    transistor cq 529

    Abstract: 2SC5245 51842 CQ 734 G TRANSISTOR cq 802
    Text: Ordering number:EN 5184A SAMO N0.5184A i 2SC5245 NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amp, OSC Applications Features • Low noise : NF=0.9dB typ f= 1GHz . : NF = 1.4dB typ (f = 1.5GHz). • High gain : I S21e I 2= lOdB typ (f= 1.5GHz).


    OCR Scan     		2SC5245 transistor cq 529 51842 CQ 734 G TRANSISTOR cq 802 PDF

    2sc4857

    Abstract: 2SC4872 2sc487 2sc4856 2sc4859
    Text: I High-Performance Si Bipolartransistor fT > 5GHz Series Features High Gain, Low Noise G -III-NRP (G iga-lll-N oise Reduction Process) technology subm icron hyperfine process developed for high gain and low noise characteristics Low Power Dissipation High perform ance at low voltage and low current for low power dissipation


    OCR Scan     		2SC4853 250mm2 jS21e 2sc4857 2SC4872 2sc487 2sc4856 2sc4859 PDF

    HXTR-2001

    Abstract: S21E 210SC
    Text: COMPONENTS GENERAL PURPOSE TRANSISTOR CHIP Features HXTR-2001 CIRCUITS H E W L E T T ^ PACKARD 330 0.013 TYP. - HIGH OUTPUT POWER 20.0 dBm PidB Typical at 2 GHz LOW NOISE FIGURE 3.8 dB Typical at 4 GHz ' 90 (0.0035) 330 (0.013) FOR HYBRID . 1 . . WIDE DYNAMIC RANGE


    OCR Scan     		HXTR-2001 HXTR-2001 S21E 210SC PDF

    HP MMIC INA

    Abstract: No abstract text available
    Text: What HEWLETT* mLlíM PACKARD Low N oise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-03100 Features • Cascadable 50 Q. Gain Block • Low N oise Figure: 2.5 dB Typical at 1.5 GHz • High Gain: 26.0 dB Typical at 2.8 GHz • 3 dB Bandwidth:


    OCR Scan     		INA-03100 INA-03100 B-0007: HP MMIC INA PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFG 196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fy = 7.5GHz F = 1.5 dEJ at 900MHz


    OCR Scan     		900MHz BFG196 Q62702-F1292 OT-223 900MHz PDF