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    TRANSISTOR FT 12 Search Results

    TRANSISTOR FT 12 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR FT 12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    b 595 transistor

    Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335
    Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor


    Original     		PDF MA4T243 MA4T24300 b 595 transistor transistor 5 Amp 700 volt transistor b 595 MA4T24335

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1120A 2SC5646A RF Transistor 4V, 30mA, fT=12.5GHz, NPN Single SSFP http://onsemi.com Features • • • • • • Low-noise : NF=1.5dB typ f=2GHz High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V) Low-voltage operation


    Original     		PDF ENA1120A 2SC5646A 10GHz A1120-9/9

    2SC5015

    Abstract: 2SC5015-T1
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5015 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD 18 FEATURES • High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low noise and high gain • Low voltage operation


    Original     		PDF 2SC5015 2SC5015-T1 PU10403EJ01V0DS 2SC5015 2SC5015-T1

    617-70

    Abstract: 2SA1977 2SC3583 MARKING T92 nec 561 LI-01/transistor k 0247
    Text: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1977 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES _0.2 2.8+ High fT 0.4 +0.1 –0.05 • PACKAGE DIMENSION in millimeters fT = 8.5 GHz TYP. • High gain 0.65 +0.1 –0.15 1.5 | S21e | = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA


    Original     		PDF 2SA1977 617-70 2SA1977 2SC3583 MARKING T92 nec 561 LI-01/transistor k 0247

    Silicon Bipolar Transistor

    Abstract: MP4T56800 MP4T568 Medium Power Bipolar Transistors S21E S22E c 1685 transistor
    Text: Medium Power, 12 Volt, High fT NPN Silicon Bipolar Transistor MP4T56800 V2.00 Features •High Output Power, 23 dBm P1dB @ 1 GHz •High Gain-Bandwidth Product, 4 GHz fT •High Power Gain, | S21E |2 = 12 dB @ 1 GHz GTU max. = 11 dB @ 2 GHz Description The MP4T568 is a medium power, high fT silicon NPN


    Original     		PDF MP4T56800 MP4T568 MP4T56800, Silicon Bipolar Transistor MP4T56800 Medium Power Bipolar Transistors S21E S22E c 1685 transistor

    Nec K 872

    Abstract: 517 E1 3007 NEC k 2134 transistor 2SC5668 k 3918 TRANSISTOR MARKING 702 6pin ic uPA892TC MARKING 702 6pin
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA892TC NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3.6 to 4.2 GHz oscillation application • 21.0 GHz fT high-gain transistor fT = 21.0 GHz TYP., S21e2 = 11.5 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz


    Original     		PDF PA892TC S21e2 2SC5668) 2SC5668 PA892TC-T1 Nec K 872 517 E1 3007 NEC k 2134 transistor 2SC5668 k 3918 TRANSISTOR MARKING 702 6pin ic uPA892TC MARKING 702 6pin

    mount chip transistor 332

    Abstract: SOT-23 TRANSISTOR 548 MA4T64500
    Text: Silicon Bipolar High fT Low Noise Microwave Transistor MA4T645 Series MA4T645 Series Silicon Bipolar High fT Low Noise Microwave Transistors Features • • • • • • • Case Style fT to 9 GHz Low Noise Figure High Associated Gain Hermetic and Surface Mount Packages Available


    Original     		PDF MA4T645 mount chip transistor 332 SOT-23 TRANSISTOR 548 MA4T64500

    2SD1875

    Abstract: 2Sd-1875
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) „ ORDERING INFORMATION


    Original     		PDF 2SD1857 80MHz) 2SD1875L-x-T92-B 2SD1875G-x-T92-B 2SD1875L-x-T92-K 2SD1875G-x-T92-K 2SD1875L-x- T92-R 2SD1875G-x- 2SD1875 2Sd-1875

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) „ ORDERING INFORMATION


    Original     		PDF 2SD1857 80MHz) 2SD1857L-x-T60-K 2SD1857G-x-T60-K 2SD1857L-x-T6S-K 2SD1857G-x-T6S-K 2SD1857L-x-TM3-T 2SD1857G-x-TM3-T 2SD1857L-x-T92-B 2SD1857G-x-T92-B

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA1201 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power amplifier and 1 voltage amplifier applications. FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz typ.


    Original     		PDF 2SA1201 2SA1201 -120V 120MHz OT-89 250mm2 QW-R208-024

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR  FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz)  ORDERING INFORMATION


    Original     		PDF 2SD1857 80MHz) 2SD1857L-x-T6S-K 2SD1857G-x-T6S-K 2SD1857L-x-T92-B 2SD1857G-x-T92-B 2SD1857L-x-T92-K 2SD1857G-x-T92-K 2SD1857L-x- T92-R

    TO92NL

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) „ ORDERING INFORMATION


    Original     		PDF 2SD1857 80MHz) 2SD1857L-x-T92-B 2SD1857G-x-T92-B 2SD1857L-x-T92-K 2SD1857G-x-T92-K 2SD1857L-x- T92-R 2SD1857G-x- TO92NL

    CPH6002

    Abstract: 7018-002 marking GB IT10486
    Text: CPH6002 Ordering number : ENA0262 NPN Epitaxial Planar Silicon Transistor CPH6002 High-Frequency Medium-Power Amplifier Applications Features • • • High fT fT=3.0GHz typ . Large current (IC=200mA). Large collector dissipation (800mW max). Specifications


    Original     		PDF CPH6002 ENA0262 200mA) 800mW 900mm2 A0262-3/3 CPH6002 7018-002 marking GB IT10486

    A11182

    Abstract: 2sc5551a A1118-4/4
    Text: 2SC5551A Ordering number : ENA1118A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max)


    Original     		PDF ENA1118A 2SC5551A 300mA) 250mm2 A1118-6/6 A11182 2sc5551a A1118-4/4

    IC 3263

    Abstract: medium power high voltage transistor transistor c 3263 SILICON npn POWER TRANSISTOR c 869
    Text: Preliminary Specifications Medium Power, 12 Volt, High fT NPN Silicon Bipolar Transistor MA4T56800 V2.00 Features ● ● ● High Output Power, 23 dBm P1dB @ 1 GHz High Gain-Bandwidth Product, 4 GHz fT High Power Gain, |S21E| = 12 dB @ 1 GHz GTU max. = 11 dB @ 2 GHz


    Original     		PDF MA4T56800 MA4T568 MA4T56800, MA4T56800 MA4T568000 IC 3263 medium power high voltage transistor transistor c 3263 SILICON npn POWER TRANSISTOR c 869

    2SC2839

    Abstract: sanyo 2033
    Text: Ordering number:EN733D NPN Epitaxial Planar Silicon Transistor 2SC2839 HF Amplifier Applications Features Package Dimensions • Very small package enabiling compactness and slimness of sets. · High fT and small cre fT=320MHz typ, cre=0.95pF typ . unit:mm


    Original     		PDF EN733D 2SC2839 320MHz 2SC2839] 2SC2839 sanyo 2033

    2SC5004

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA804TC NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA804TC has built-in two transistors which were developed for UHF. FEATURES • High fT: fT = 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz)


    Original     		PDF PA804TC 2SC5004) PA804TC PA804TC-T1 2SC5004

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1201 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. „ FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz typ.


    Original     		PDF 2SA1201 2SA1201 -120V 120MHz 2SA1201L-x-AB3-R 2SA1201G-x-AB3-R OT-89 QW-R204-024 QW-R208-024

    ST1736

    Abstract: optocouplers H11B1
    Text: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS H11B1 H11B2 H11B3 PACKAGE DIMENSIONS DESCRIPTION The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-line package. ft ft ft FEATURES


    OCR Scan     		PDF H11B1 H11B2 H11B3 H11B3 E90700 H11B1) H11B2) H11B3) ST1736 optocouplers H11B1

    2SA594

    Abstract: FT1D 2SC594 Produced by Perfect Crystal Device Technology CC178
    Text: SILICON PNP EPITAXIAL TRANSISTOR PCT 2SA 594 PROCESSJj ii ft X * ffl INDUSTRIAL APPLICATIONS o o High Frequency Amplifier, Video Amplifier Applications High Speed Switching Applications Unit in mm : 3 u- ?»S ft i >1 %W 5 94 ¿3X7"! fT = 2,00MHz ( T y p .)


    OCR Scan     		PDF 2sa594 200MHz 2SC594 2SA594 FT1D 2SC594 Produced by Perfect Crystal Device Technology CC178

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN 2710A 2SC4271 NO.2710A NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display Video Output Applications Applications . Wide-band amplifiers . High frequency drivers Features . High fT fT=2.2GHz typ . High current (Ic=300mA)


    OCR Scan     		PDF 2SC4271 300mA) 100mA 2SC4271 O-126 4090MO/4118YT

    2sc2681 transistor

    Abstract: 2sc2681 2SA1141
    Text: 2SA1141/2SC2681 ft« » « * }* !!. PNP Epitaxial/NPN Silicon Triple Diffused Transistor Audio Frequency Power Amplifier, High Frequency Power Amplifier o f T A<giv>„ fT —80 M H z N P N , fT = 90 M H z ( P N P ) HMm/ PACKAGE DIMENSIONS oh FE, (Unit : mm)


    OCR Scan     		PDF 2SA1141/2SC2681 2SA1141 2SC2681 2SAI141/2SC2681 Test/PWS350 2sc2681 transistor 2sc2681

    2SC3745

    Abstract: No abstract text available
    Text: 2SC3745 SILIC0N NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in mm U H F -C BAND LOW NOISE AMPLIFIER APPLICATIONS. • High Gain : |S21e|2= 12dB Typ. Low Noise Figure : NF = 2.0dB (Typ.) High fT : fT = 6.5GHz (Typ.) + Q2 2.9 - a 3 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC3745 2SC3745

    2SA1474

    Abstract: A147 SC46 T0220AB
    Text: Ordering num ber: EN 2526 2SA1474/2SC3780 PNP/NPN Epitaxial Planar Silicon Transistor SANYO Ultrahigh-Definition CRT Display _Video Output Applications i Applications . Video output . Color TV chroma output . Wide-band amp Features . High fT fT typ=800MHz


    OCR Scan     		PDF 2SA1474/2SC3780 800MHz) 2SA1474 A147 SC46 T0220AB