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    TRANSISTOR I 17-13 0773 Search Results

    TRANSISTOR I 17-13 0773 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR I 17-13 0773 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N7002 Philips

    Abstract: 03aa03 philips 2n7002
    Text: 2N7002 N-channel enhancement mode field-effect transistor Rev. 03 — 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7002 in SOT23.


    Original     		2N7002 2N7002 03ab44 2N7002 Philips 03aa03 philips 2n7002 PDF

    BST72A

    Abstract: HZG330
    Text: BST72A N-channel enhancement mode field-effect transistor Rev. 03 — 25 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BST72A in SOT54 TO-92 variant .


    Original     		BST72A BST72A 03ab40 HZG330 PDF

    2N7000 MOSFET

    Abstract: Mosfet 2n7000
    Text: 2N7000 N-channel enhancement mode field-effect transistor Rev. 03 — 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7000 in SOT54 TO-92 variant .


    Original     		2N7000 2N7000 03ab40 2N7000 MOSFET Mosfet 2n7000 PDF

    03aa03

    Abstract: No abstract text available
    Text: PMBF170 N-channel enhancement mode field-effect transistor Rev. 03 — 23 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PMBF170 in SOT23.


    Original     		PMBF170 PMBF170 03ab44 03aa03 PDF

    07153

    Abstract: 03aa02
    Text: 2N7000 N-channel enhancement mode field-effect transistor Rev. 03 — 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7000 in SOT54 TO-92 variant .


    Original     		2N7000 2N7000 03ab40 03ab30 771-2N7000AMO 07153 03aa02 PDF

    "MARKING CODE N0"

    Abstract: BFR505T MRC013 SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR505T NPN 9 GHz wideband transistor Product specification Supersedes data of 2000 Mar 14 2000 May 17 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR505T FEATURES DESCRIPTION • Low current consumption


    Original     		M3D173 BFR505T OT416 SC-75) MBK090 613516/03/pp16 "MARKING CODE N0" BFR505T MRC013 SC-75 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSP110 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP110 in SOT223.


    Original     		BSP110 BSP110 OT223. OT223, 03ab45 PDF

    BST82

    Abstract: HZG303
    Text: BST82 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BST82 in SOT23.


    Original     		BST82 BST82 03ab44 HZG303 PDF

    BSH112

    Abstract: No abstract text available
    Text: BSH112 N-channel enhancement mode field-effect transistor Rev. 01 — 25 August 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSH112 in SOT23.


    Original     		BSH112 M3D088 BSH112 PDF

    07256

    Abstract: No abstract text available
    Text: BSP110 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP110 in SOT223.


    Original     		BSP110 BSP110 OT223. OT223, 03ab45 03ab30 OT223 771-BSP110115 07256 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSP110 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP110 in SOT223.


    Original     		BSP110 BSP110 OT223. OT223, 03ab45 PDF

    Untitled

    Abstract: No abstract text available
    Text: BST82 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BST82 in SOT23.


    Original     		BST82 BST82 03ab44 PDF

    BSH120T

    Abstract: 03ac49
    Text: BSH120T N-channel enhancement mode field-effect transistor Rev. 01 — 06 September 2000 Product specification M3D186 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		BSH120T M3D186 BSH120T 03ab40 MBB076 03ac49 PDF

    BSN20

    Abstract: No abstract text available
    Text: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.


    Original     		BSN20 BSN20 03ab44 PDF

    si4800

    Abstract: 03af85 MS-012AA Si4800 philips
    Text: Si4800 N-channel enhancement mode field-effect transistor Rev. 01 — 13 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4800 in SOT96-1 SO8 .


    Original     		Si4800 M3D315 Si4800 OT96-1 OT96-1, 03af85 MS-012AA Si4800 philips PDF

    BSN20

    Abstract: HZG303
    Text: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.


    Original     		BSN20 BSN20 03ab44 HZG303 PDF

    Untitled

    Abstract: No abstract text available
    Text: PSMN008-75P; PSMN008-75B N-channel enhancement mode field-effect transistor Rev. 01 — 18 September 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PSMN008-75P; PSMN008-75B PSMN008-75P PSMN008-75B OT404 OT404, MBK106 PDF

    03ac29

    Abstract: HZG336 MS-012AA PHN103T
    Text: PHN103T N-channel enhancement mode field-effect transistor Rev. 01 — 28 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHN103T in SOT96-1 SO8 .


    Original     		PHN103T PHN103T OT96-1 OT96-1, 03ac29 HZG336 MS-012AA PDF

    BS-P0303

    Abstract: Royal Electronics DATASHEET BSP030 BSP030 HZG336 SC-73 03ac29
    Text: BSP030 N-channel enhancement mode field-effect transistor Rev. 04 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP030 in SOT223.


    Original     		BSP030 BSP030 OT223. OT223, BS-P0303 Royal Electronics DATASHEET BSP030 HZG336 SC-73 03ac29 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSP030 N-channel enhancement mode field-effect transistor Rev. 04 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP030 in SOT223.


    Original     		BSP030 BSP030 OT223. OT223, PDF

    Untitled

    Abstract: No abstract text available
    Text: BSP030 N-channel enhancement mode field-effect transistor Rev. 04 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP030 in SOT223.


    Original     		BSP030 BSP030 OT223. OT223, PDF

    Untitled

    Abstract: No abstract text available
    Text: PHP54N06T N-channel enhancement mode field-effect transistor Rev. 01 — 14 February 2001 Product specification M3D307 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PHP54N06T M3D307 PHP54N06T O-220AB) MBB076 MBK106 PDF

    smd diode 319

    Abstract: No abstract text available
    Text: PHB160N03T N-channel enhancement mode field-effect transistor Rev. 01 — 13 September 2000 Product specification M3D166 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PHB160N03T M3D166 PHB160N03T OT404 MBK116 MBB076 smd diode 319 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUPERTEX INC 01 Dif| 07735^5 OOGlfiD? 8773295 SUPERTEX INC OtE 01807 &• D HV02 une -O S 16-Channel Matrix TFEL Panel Display Row Driver Ordering Information Package Options Device 40-Pin Ceramic DIP 36-Pin Leadless Chip Carrier 36-Pin Leaded Chip Carrier


    OCR Scan     		16-Channel 40-Pin HV02C 36-Pin HV02LC HV02CF HV02CS PDF