2SB828
Abstract: 2SD1064
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB828 DESCRIPTION •High Collector Current: IC= -12A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -6A ·Wide Area of Safe Operation ·Complement to Type 2SD1064
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2SB828
2SD1064
2SB828
2SD1064
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2SB826
Abstract: 2SD1062
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB826 DESCRIPTION •High Collector Current: IC= -12A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -6A ·Wide Area of Safe Operation ·Complement to Type 2SD1062
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2SB826
2SD1062
2SB826
2SD1062
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STD123ASF
Abstract: No abstract text available
Text: STD123ASF Semiconductor NPN Silicon Transistor Features • High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter. Ordering Information
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STD123ASF
100mA
OT-23F
KST-2029-001
500mA,
STD123ASF
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2SA1600
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1600 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -40(V)(Min.) ·Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max.)@IC= -6A ·Large Current Capability-IC= -12A
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2SA1600
2SA1600
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Untitled
Abstract: No abstract text available
Text: STD123ASF Semiconductor NPN Silicon Transistor Features • High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter. Ordering Information
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STD123ASF
100mA
STD123ASF
OT-23F
KST-2029-001
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2sd2083
Abstract: transistor 2sd2083 2sb1383
Text: 2SD2083 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1383 IEBO VEB=6V 10max mA 6 V V(BR)CEO 25(Pulse40) A hFE IC=25mA 120min VCE=4V, IC=12A 2000min V 2 A VCE(sat) IC=12A, IB=24mA 1.8max PC 120(Tc=25°C) W VBE(sat) IC=12A, IB=24mA 2.5max
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2SD2083
2SB1383)
10max
Pulse40)
120min
2000min
20typ
340typ
2sd2083
transistor 2sd2083
2sb1383
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2sd2083
Abstract: 2sb1383
Text: 2SD2083 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1383 IEBO VEB=6V 10max mA 6 V V(BR)CEO 25(Pulse40) A hFE IC=25mA 120min VCE=4V, IC=12A 2000min V 2 A VCE(sat) IC=12A, IB=24mA 1.8max PC 120(Tc=25°C) W VBE(sat) IC=12A, IB=24mA 2.5max
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2SD2083
2SB1383)
10max
Pulse40)
120min
2000min
20typ
340typ
MT-100
2sd2083
2sb1383
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STD123AS
Abstract: No abstract text available
Text: STD123AS Semiconductor NPN Silicon Transistor Features • High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter. Ordering Information
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STD123AS
100mA
OT-23
KSD-T5C016-000
STD123AS
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Untitled
Abstract: No abstract text available
Text: STD123AS Semiconductor NPN Silicon Transistor Features • • • • High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA Suitable for large current drive directly. Application for IRED Drive transistor in remote transmitter. Ordering Information
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STD123AS
100mA
STD123AS
OT-23
KSD-T5C016-001
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2SB903
Abstract: 2SD1212
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB903 DESCRIPTION •High Collector Current: IC= -12A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -5A ·Complement to Type 2SD1212 APPLICATIONS ·Designed for relay drivers, high-speed inverters, converters,
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2SB903
2SD1212
2SB903
2SD1212
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darlington transistor C 3300
Abstract: BDX65 BDX65A BDX65B bdx65c transistor Audio Output Transistor Amplifier BDX65C BDX64* darlington bdx64
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000 Min @ IC= 5A ·Complement to Type BDX64/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier
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BDX64/A/B/C
BDX65
BDX65B
BDX65A
BDX65C
darlington transistor C 3300
BDX65
BDX65A
BDX65B
bdx65c transistor
Audio Output Transistor Amplifier
BDX65C
BDX64* darlington
bdx64
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2SC5526
Abstract: SWITCHING TRANSISTOR 60V 2SA2007 transistor A6A
Text: 2SA2007 High-speed Switching Transistor -60V-12A 2SA2007 •External dimensions (Units : mm) •Features 1) High switching speed. (Typ. tf=0.15,us at Ic= -6A) 2) Low saturation voltage. (Typ. VcE(sat)= -0 .2 V at Ic / Ib = -6 A / -0.3A )
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2SA2007
-60V-12A)
2SC5526.
O-220FN
30MHz
O-22QFN
2SC5526
SWITCHING TRANSISTOR 60V
2SA2007
transistor A6A
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BDT65AF
Abstract: Audio Output Transistor Amplifier BDT65A BDT65BF npn DARLINGTON 10A BDT65CF BDT65F BDT65C NPN high power transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000 Min @ IC= 5A ·Complement to Type BDT64F/AF/BF/CF APPLICATIONS ·Designed for audio output stages and general purpose
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BDT64F/AF/BF/CF
BDT65F
BDT65BF
BDT65AF
BDT65CF
BDT65AF
Audio Output Transistor Amplifier
BDT65A
BDT65BF
npn DARLINGTON 10A
BDT65CF
BDT65F
BDT65C
NPN high power transistor
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Untitled
Abstract: No abstract text available
Text: Power Transistor 2SA1567 Test Conditions VCB = –50V VEB = –6V IC = –25mA VCE = –1V, IC = –6A IC = –6A, IB = –0.3A VCE = –12V, IE = –0.5A VCB = –10V, f = 1MHz ICBO IEBO V BR CEO hFE VCE (sat) fT COB Ratings –100max –100max –50min
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2SA1567
100max
50min
50min
35max
40typ
330typ
O220F
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STD123ASF
Abstract: No abstract text available
Text: STD123ASF NPN Silicon Transistor Features • High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter. PIN Connection 3 1 2 SOT-23F Ordering Information
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STD123ASF
100mA
OT-23F
KSD-T5C077-000
STD123ASF
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STD123AS
Abstract: No abstract text available
Text: STD123AS NPN Silicon Transistor PIN Connection Features High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA Suitable for large current drive directly. Application for IRED Drive transistor in remote transmitter. 2 1 • • • • SOT-23 Ordering Information
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STD123AS
100mA
OT-23
KSD-T5C016-002
STD123AS
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irg7ic
Abstract: transistor IC 12A 400v IRG7
Text: IRG7IC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 8.0A, TC = 100°C tsc > 3 s, Tjmax = 150°C G VCE on typ. = 1.60V @ IC = 12A G E • • • • Air Conditioner Compressor Refrigerator Vacuum Cleaner
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IRG7IC20FDPbF
O-220AB
irg7ic
transistor IC 12A 400v
IRG7
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Untitled
Abstract: No abstract text available
Text: AP20GT60ASI-HF RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features High Speed Switching Low Saturation Voltage VCE sat ,typ.=1.7V@IC=12A RoHS Compliant Product G CE VCES 600V IC 12A TO-220CFM(I) C G
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AP20GT60ASI-HF
O-220CFM
100us
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2SA2007
Abstract: 2SC5526
Text: 2SC5526 Transistors High-speed Switching Transistor 60V, 12A 2SC5526 !External dimensions (Units: mm) !Features 1) Low saturation voltage. (Typ. VCE(sat) = 0.15V at IC / IB = 6A / 0.3A) 2) High switching speed. (Typ. tf = 0.1µs at Ic = 6A) 3) Wide SOA. (safe operating area)
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2SC5526
2SA2007.
O-220FN
30MHz
2SA2007
2SC5526
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2SB922
Abstract: 2SD1238
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB922 DESCRIPTION •High Collector Current: IC= -12A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -6A ·Complement to Type 2SD1238 APPLICATIONS ·Designed for large current switching of relay drivers, highspeed inverters, converters applications.
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2SB922
2SD1238
2SB922
2SD1238
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2sd1240
Abstract: 2SB924
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB924 DESCRIPTION •High Collector Current: IC= -25A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -12A ·Complement to Type 2SD1240 APPLICATIONS ·Designed for large current switching of relay drivers, highspeed inverters, converters applications.
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2SB924
2SD1240
2sd1240
2SB924
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP20GT60ASI-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching Low Saturation Voltage Typical V CE sat = 1.7V at IC=12A VCES 600V IC 20A Isolated tab G Industry-standard isolated package C C RoHS-compliant, halogen-free
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AP20GT60ASI-HF-3
O-220CFM
AP20GT60AS
20GT60ASI
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2SA2007
Abstract: 2SC552 2SC5526
Text: 2SC5526 Transistors High-speed Switching Transistor 60V, 12A 2SC5526 !External dimensions (Units: mm) !Features 1) Low saturation voltage, typically VCE(sat) = 0.15V at IC / IB = 6A / 0.3A. 2) High switching speed, typically tf = 0.1µs at Ic =6A. 3) Wide SOA. (safe operating area)
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2SC5526
2SA2007.
O-220FN
100ms
30MHz
2SA2007
2SC552
2SC5526
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SWITCHING TRANSISTOR 60V
Abstract: 2SC5526 6a10 6A10 DC 2SA2007 TO-220FN
Text: 2SC5526 Transistors High-speed Switching Transistor 60V, 12A 2SC5526 •External dimensions (Units: mm) •Features 1) Low saturation voltage, typically VcE<sat)=0.15V at Ic / Ib = 6A / 0.3A. 2) High switching speed, typically tf=0.1 (is at Ic =6A. 3) Wide SOA. (safe operating area)
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2SC5526
2SA2007.
O-220FN
30MHz
0Q2M43S
SWITCHING TRANSISTOR 60V
2SC5526
6a10
6A10 DC
2SA2007
TO-220FN
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