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    TRANSISTOR JSW Search Results

    TRANSISTOR JSW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR JSW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN4001

    Abstract: laser diode spice model simulation Class E amplifier 300 watt mosfet amplifier class AB MRF transistor PIN diode MACOM SPICE model 27.12MHz power amplifier 27.12Mhz 500 watt mosfet power amplifier circuit diagram 1000 watt mosfet power amplifier
    Text: Application Note AN4001 Application Note 300 Watt Class E Amplifier Using MRF151A Rev. 01262010 BACKGROUND Modern industrial applications for high-efficiency, switch-mode RF amplifiers include laser, plasma, magnetic resonance imaging MRI , and communications. The power levels and frequency of operation of industrial equipment used in these areas vary greatly. While plasma and heating applications tend to cluster at


    Original     		PDF AN4001 MRF151A 12MHz, AN4001 laser diode spice model simulation Class E amplifier 300 watt mosfet amplifier class AB MRF transistor PIN diode MACOM SPICE model 27.12MHz power amplifier 27.12Mhz 500 watt mosfet power amplifier circuit diagram 1000 watt mosfet power amplifier

    transistor JSW 07

    Abstract: BTS5562E
    Text: Data Sheet, Rev. 1.0, May 2008 SPOC - BTS5562E SPI Power Controller Automotive Power SPOC - BTS5562E Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF BTS5562E transistor JSW 07 BTS5562E

    HSML-2822

    Abstract: varactor diode model in ADS Limiter PIN diode ADS model hsml5822 PIN diode ADS model varactor diode in p-n junction in ads ADS varactor diode hsms2820 limiter zero bias schottky diode 2GHz transistor JSW
    Text: Schottky Enhanced PIN Limiter Compact, low threshold and wideband Application Note 5438 Introduction The sharing of sites or towers by multiple transceivers subjects receiver front-end stages to overload from nonsynchronous transmissions via mutual coupling between


    Original     		PDF HSMP382x 10Agilent 11Agilent AV02-2139EN HSML-2822 varactor diode model in ADS Limiter PIN diode ADS model hsml5822 PIN diode ADS model varactor diode in p-n junction in ads ADS varactor diode hsms2820 limiter zero bias schottky diode 2GHz transistor JSW

    BTS5672E

    Abstract: transistor JSW 12
    Text: Data Sheet, Rev. 1.0, Jan. 2008 SPOC - BTS5672E SPI Power Controller Automotive Power SPOC - BTS5672E Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF BTS5672E BTS5672E transistor JSW 12

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    marking Kf SOT-89

    Abstract: c71d KTA1666 KTC4379
    Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1666 EPITAXIAL PLANAR PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES • Low Saturation Voltage : VCE Sat =-0.5V (Max.) (IC=-1A) • High Speed Switching Time : tstg=1.0^S(Typ.)


    OCR Scan     		PDF KTA1666 KTC4379. KTA1666 250mm2x marking Kf SOT-89 c71d KTC4379

    2SB1008

    Abstract: No abstract text available
    Text: Is ~ 7 > V $ /T ra n sisto rs 2SB 1008 2SB1008 PNP h> i5;Ji>jSW^]iill iffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Darlington Transistor • • 1 # - ' ) > W f ^ j i l S l / D i m e n s i o n s U n it : m m ) h > t ^ T - h FET'Æ >5o 2)BEfôlCjfô4kQCD$ÊÎ)t£F*3j&o >Sjf$


    OCR Scan     		PDF 2SB1008 O-126 600mA/-1 100mA 2SB1008

    Untitled

    Abstract: No abstract text available
    Text: • TqsqgB? ongflbo? q SCS-THOMSON BUR20 Rfflmg^omLioir^oin ! S 6 S-THQMSON 3QE I> HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR ADVANCE DATA HIGH CURRENT HIGH SWITCHING SPEED HIGH POWER GOOD SOA GOOD RBSOA INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The BUR20 is a silicon multiepitaxial planar NPN


    OCR Scan     		PDF BUR20 BUR20 300ns, 10MHz

    ocr4

    Abstract: 2SD1762 transistor 2a h
    Text: / T ransistors b~7 O C R 4 4 Q C 2SB11Í i 7 Ji/7' u - P N P h 7 > 15;Ji JSW^íÍlÍÍffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • ii-Jfi\t"ji0 / /Dimensions Unit : mm) 1) VcE(sat) 0.5V (Typ.)t<£l'„ at lc / lB= 2 A / - 0 . 2 A 2) 2 S D 1 7 6 2 t z l > y j T i i 5 o


    OCR Scan     		PDF 2SB11Ã 2SD1762tzl 2SD1762. O-220FP ocr4 2SD1762 transistor 2a h

    transistor JSW

    Abstract: diode JSW FL 576-K125
    Text: 6DI30M-050 30 a Outline Drawings POWER TRANSISTOR MODULE ‘ F e a tu re s • ifi5hFE High DC Current Gain • iS i S TA'V’f-'sif High Speed Switching : A p p lic a tio n s • 9 General Purpose Inverter • Uninterruptible Power Supply • N C lflM S tM


    OCR Scan     		PDF 6DI30M-050 E82988 l95t/R89 Shl50 transistor JSW diode JSW FL 576-K125

    tc6105

    Abstract: 2SK679 BH rn transistor 10285 TC-6105
    Text: = t — 5> • 5/ - h M O S Field Effect P ow er Transistor 2SK679 2SK679Ü, 5 M W M m C co FE T T ", a i t s i z «t h x a v -f- > x T ~ t„ + T 9 & -3 -X -— 9 -t — %fcn> b ' ÿ A 7 ' i c * i l T " - f 0 # I t R d s o „ ^ 0 .5 £2 ( T Y P . ) @ V Gs = 8


    OCR Scan     		PDF 2SK679 2SK679Ã TC-6105 tc6105 2SK679 BH rn transistor 10285

    TRANSFORMER bck 03

    Abstract: transistor JSW 07 OP295
    Text: Dual/Quad Rail-to-Rail Operational Amplifiers 0P-295/0P-495 ANALOG ► DEVICES FEATURES Rail-to-Rail Output Swing Single-Supply Operation: +3 V to 36 V Low Offset Voltage: 300 jaV Gain Bandwidth Product: 75 kHz High Open-Loop Gain: 1000 V /m V Unity-Gain Stable


    OCR Scan     		PDF 0P-295/0P-495 OP-295 14-Lead TRANSFORMER bck 03 transistor JSW 07 OP295

    Untitled

    Abstract: No abstract text available
    Text: 6DI100A-050 iooa l± s < n - * : ï > = L - } V ' < n — \=7 > i > 7 ,9 =£\>n.-)V : Outline Drawings POW ER T R A N S IS T O R M ODULE • 4# ^ : Features ,' V K-'v* • 7 '} —jfc-f >J > V # 4 =t— Kl*9 E • hFE*''S!nL' • Including Free W heeling Diode


    OCR Scan     		PDF 6DI100A-050 I95t/RS9 Shl50

    Untitled

    Abstract: No abstract text available
    Text: r r u TECHNOLOGY n m _ 1A High Voltage, Efficiency i o » Switching Voltage Regulator F€flTUR€S DCSCRIPTIOn • Wide Input Voltage Range: 3V to 75V ■ High Switch Voltage: 100V ■ Low Quiescent Current: 4.5mA ■ Internal 1A Switch ■ Shutdown Mode Draws Only 120pA Supply Current


    OCR Scan     		PDF 120pA T0-220 LT1072 LT1082 LT1082 T0-22Q

    transistor JSW

    Abstract: jSw Diode
    Text: TOSHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US 5 1 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


    OCR Scan     		PDF MG200Q1US51 transistor JSW jSw Diode

    jSw Diode

    Abstract: No abstract text available
    Text: T O SH IB A MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG300Q2YS50 961001EAA1 jSw Diode

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG15Q6ES50A m r; 1 = ; n f i F ^ n i TOSHIBA GTR MODULE • ■ Mr SILICON N CHANNEL IGBT la r ta «v v m ■ HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance 6 IGBTs Built Into 1 Package.


    OCR Scan     		PDF MG15Q6ES50A 961001EAA1 TjS125Â

    transistor GY 721

    Abstract: transistor JSW LT 723 ic jSw Diode
    Text: TOSHIBA MG240V1US41 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT M G 2 4 0 V 1 US41 HIGH PO W E R SWITCHING APPLICATIONS M OTO R CONTROL APPLICATIONS • • • • The Electrodes are Isolated from Case. High Input Impedance Enhancement-Mode High Speed


    OCR Scan     		PDF MG240V1US41 i00000, transistor GY 721 transistor JSW LT 723 ic jSw Diode

    transistor JSW

    Abstract: toshiba srf
    Text: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


    OCR Scan     		PDF MG200Q2YS50 transistor JSW toshiba srf

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


    OCR Scan     		PDF MG200Q2YS50 TjS125Â

    transistor JSW

    Abstract: No abstract text available
    Text: □ ANALOG DEVICES LowNoise, LowDrift Single-Supply Operational Amplifiers OP-113/0P-213/0P-413* FEATURES Single- or Dual-Supply Operation Low Noise: 4.7 n V /V R z @ 1 kHz Wide Bandwidth: 3.4 MHz Low Offset Voltage: 100 jjlV Very Low Drift: 0.2 |xV/°C Unity Gain Stable


    OCR Scan     		PDF OP-113/0P-213/0P-413* OP-113 53E16 OP113 transistor JSW

    BA4904A

    Abstract: AV011 av033 BA3906
    Text: BA3902 BA3904A BA3906 Power supply, standard voltag The BA3902, BA3904A, and BA3906 are power supplies used in car audio systems. Features • available in an SIP-M12 package • four power sources available from each IC — BA3902: 5.0 V, 8.5 V x2 , 9.0 V


    OCR Scan     		PDF BA3902 BA3904A BA3906 BA3902, BA3904A, BA3906 SIP-M12 BA3902: BA3904A: BA3906: BA4904A AV011 av033

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON TEA5725 m 4HEAD PLAYBACK AND RECORD AMPLIFIER FOR VCR PRELIMINARY DATA GENERAL • ONE 5V POWER SUPPLY ■ PLAYBACK/RECORD MODE SELECTION THROUGH A LOGIC INPUT ■ COMPATIBLE WITH ROTARY TRANSFORM­ ERS WITHOUT ISOLATION RINGS PLAY-BACK MODE RECORD MODE


    OCR Scan     		PDF TEA5725 S028B

    ic 7485 4 bit comparator

    Abstract: 16 bit comparator using 74*85 IC CD40298 Ic 7485 comparator function table CD45858 transistor JSW
    Text: ^ Tex as In s t r u m e n t s CD4585B Types Data sheet acquired from Harris S em iconductor SCHS091 CMOS 4-Bit Magnitude Comparator High Voltage Types 20-Volt Rating • CD4585B is a 4-bit magnitude com­ parator designed for use in computer and logic applications that require the comparison


    OCR Scan     		PDF SCHS091 CD4585B 20-Volt CD45858 ic 7485 4 bit comparator 16 bit comparator using 74*85 IC CD40298 Ic 7485 comparator function table transistor JSW