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    TRANSISTOR K6A60D Search Results

    TRANSISTOR K6A60D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    K6A60D

    Abstract: No abstract text available
    Text: TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.)


    Original     		PDF TK6A60D K6A60D

    K6A60D

    Abstract: K6A60 TK6A60D transistor K6A60D K6A6 TK6A K6A60D data marking i2
    Text: TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.)


    Original     		PDF TK6A60D K6A60D K6A60 TK6A60D transistor K6A60D K6A6 TK6A K6A60D data marking i2

    K6A60D

    Abstract: TK6A60D transistor K6A60D K6A6 K6A60 TK6A
    Text: TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.)


    Original     		PDF TK6A60D K6A60D TK6A60D transistor K6A60D K6A6 K6A60 TK6A

    k6a60d

    Abstract: No abstract text available
    Text: TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		PDF TK6A60D k6a60d