Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR M 1104 Search Results

    TRANSISTOR M 1104 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR M 1104 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Step-down DC/DC Converter with VR and Reset R5210x SERIES NO. EA-102-110412 Discontinued OUTLINE FEATURES Wide Range of Input Voltage . 2.7V~5.5V Built-in Soft-start Function Typ. 2ms and built-in power-on reset delay (Typ. 10ms) Maximum Output Current.500mA (DC/DC), 200mA (VR)


    Original     		PDF R5210x EA-102-110412 500mA 200mA Room403, Room109, 10F-1,

    R1202N723A

    Abstract: DFN1616-6B LQH32CN100K53 LQH32CN220K53 VLF3010A-100 VLF3010A-220 LQH2MC220K02 R1202N
    Text: R1202x SERIES STEP-UP DC/DC CONVERTER with SHUTDOWN FUNCTION NO.EA-255-110404 OUTLINE The R1202x Series are CMOS-based PWM step-up DC/DC converter ICs with low supply current. Each of these ICs consists of an NMOS FET, NPN transistor, an oscillator, a PWM comparator, a voltage


    Original     		PDF R1202x EA-255-110404 Room403, Room109, 10F-1, R1202N723A DFN1616-6B LQH32CN100K53 LQH32CN220K53 VLF3010A-100 VLF3010A-220 LQH2MC220K02 R1202N

    PCF7952

    Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
    Text: Philips Semiconductors, Inc. Product Discontinuation Notice DN50 Exhibit A December 31, 2003 SEE DN50 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.


    Original     		PDF VP22480-3 VP22480-5 VP22530-2 PCF7952 pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191

    PCF7931AS

    Abstract: PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps
    Text: Philips Semiconductors Product Discontinuations Notice DN44 December 31, 2000 SEE DN44 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


    Original     		PDF 87C528 X3A-KTY181/1 X3A-OH155 PCF7931AS PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


    Original     		PDF DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    340G-02

    Abstract: Y25N120 GY25N120 motorola transistor m 237
    Text: MOTOROLA Order this document by MGY25N 120/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet M GY25N120 Insulated G ate Bipolar Transistor N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage


    OCR Scan     		PDF MGY25N 120/D GY25N120 MGY25N120/D 340G-02 Y25N120 GY25N120 motorola transistor m 237

    K1461

    Abstract: BD189 BD185 735M
    Text: MOTOROLA sc 15E D I XSTRS/R F fc.3 fc.7 a 5 M 0 0 flM717 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR 4.0 AMPERES POWER TRANSISTOR NPN SILICON . . . designed for use in 6.0 to 10 Watt audio am plifiers utilizing com­


    OCR Scan     		PDF Q0flM717 BD185 BD189 K1461 735M

    BD 266 S

    Abstract: BD140 pnp transistor BD 136 to225a transistor bd 140 -16 BD136 transistor 136 138 140 BD136.6
    Text: M OT O R C L A SC XSTRS/R 15E 0 § F b3b725M G0ÖM70S 3 | BD136,-6,-10,-16 BD138,-6,-10,~16 BD140,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR 1.S AMPERE POWER TRANSISTOR • . . designed for use as audio amplifiers and drivers utilizing


    OCR Scan     		PDF b3b725M BD136 BD138 BD140 O-225AA 0GflM70t BD 266 S BD140 pnp transistor BD 136 to225a transistor bd 140 -16 transistor 136 138 140 BD136.6

    BD234

    Abstract: No abstract text available
    Text: MO TQR CLA SC 1SE D | 1 317554 00fiM7ai 1 | XSTRS/R F 7^-33-/? MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2.0 AMPERES POWER TRANSISTOR PNP SILICON PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR . . . d e sig n e d for u se in 5.0 to 10 W a tt a u d io a m p lifie rs a n d drivers


    OCR Scan     		PDF 00fiM7ai BD234 BD236 BD236 O-225AA

    MRB11040W

    Abstract: QQHb32b International Power Sources NPN Silicon Epitaxial Planar Transistor copper permittivity
    Text: 33'/3 Preliminary specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor P H IL IP S MRB11040W 7110fi2Li 004b32M 0M2 M P H I N SbE D INTERNATIONAL FEATURES DESCRIPTION APPLICATIONS • Input prematching cell allows an


    OCR Scan     		PDF FO-67 MRB11040W 0G4b32M T-33-13 711002b 0D4b32fl MRB11040W QQHb32b International Power Sources NPN Silicon Epitaxial Planar Transistor copper permittivity

    DM 0365 R pin EQUIVALENT

    Abstract: transistor rf m 1104 MRF848 DM 0365 R pin DM 0365 R
    Text: M O T O R O L A SC Ì X S T R S / R F> DE | t 3 b ? a S M 6 3 6 7 2 5 4 MOTOROLA SC <XSTRS/R F 8 9 D 79271 □ □7'ì271 4 D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF848 A d v a n ce In form ation T he RF Line 60 W 8 0 0 -9 6 0 M H z RF POWER TRANSISTOR


    OCR Scan     		PDF MRF848 Epsilam-10 DM 0365 R pin EQUIVALENT transistor rf m 1104 MRF848 DM 0365 R pin DM 0365 R

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


    OCR Scan     		PDF

    BF195 equivalent

    Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
    Text: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 7 1 1 0 0 2 b O C I b ^m a Philips Sem iconductors 2T2 RHIN Product specification NPN 6 GHz wideband transistor FEATURES BFR93A PINNING PIN DESCRIPTION • High power gain • Low noise figure • Very low intermodulation distortion 1 base 2 emitter • PNP complement is the BFT93.


    OCR Scan     		PDF BFR93A BFT93.

    bo 139

    Abstract: bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140
    Text: MOTORCL A SC 1EE D § L3b72S4 0GflM703 T | XSTRS/R F BD135,-6,-10,-16 BD137,-6,-10,-16 BD139,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLA STIC M EDIUM POW ER SILIC O N NPN TR A N SISTO R 1.S AMPERE POWER TRANSISTOR . . . designed for use as audio amplifiers and drivers utilizing


    OCR Scan     		PDF L3b72S4 0GflM703 BD135 BD137 BD139 225AA bo 139 bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140

    2SD1898

    Abstract: 2SD1863 B1241 D1733
    Text: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F •F e a tu re s •E x te rn a l dim ensions (Units: mm) 1) High V ceo. V ceo = 8 0 V 2SD1898 2) High IC. Ic = 1A (DC) 3) Good hFE linearity. 4) 1.6 ± 0 1 r— 1 -m Low VcE(sat).


    OCR Scan     		PDF 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F 2SD1898 1260/2S SC-62 2SD1768S 2SD1898 2SD1863 B1241 D1733

    transistor 2S D 716

    Abstract: motorola C 547 MRF848 Epsilam-10 motorola MN transistor V145M transistor rf m 1104
    Text: M O T O R O L A SC Ì X S T R S / R F> 6367254 MOTOROLA SC "öi <XSTRS/R F DE |b3ti75SM 007^271 4 89D 79271 D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF848 A d v a n c e Information 60 W The R F Line 800-960 MHz RF POWER TRANSISTOR N P N SILICO N RF P O W E R T R A N S IS T O R


    OCR Scan     		PDF b3ti75SM MRF848 transistor 2S D 716 motorola C 547 MRF848 Epsilam-10 motorola MN transistor V145M transistor rf m 1104

    Untitled

    Abstract: No abstract text available
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSm INDUSTRIAL APPLIC ATIONS H IG H S P E E D , H I G H CURRENT SW ITC HIN G A P P L I C A T I O N S . Uni t R E L A Y D R IV E ,M O T O R DR IVE AND DC-DC CONVER TER A P P L I C A T I O N S . in mm


    OCR Scan     		PDF 15mfi D-30A

    KSR1104

    Abstract: KSR2104 7K SOT23 TRANSISTOR ksr2104
    Text: KSR2104 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (R 1=47KQ , R2=47K£i) • C om plem ent to K S R 1104 ABSOLUTE MAXIMUM RATINGS (TA=25°C)


    OCR Scan     		PDF KSR2104 KSR1104 OT-23 -10nA, KSR1104 KSR2104 7K SOT23 TRANSISTOR ksr2104

    Mosfet FTR 03-E

    Abstract: mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337
    Text: h 7 > y ^ £ / T ra n sisto rs h 7 > v * £ IÜ á q — J W / T r a n s is t o r s S u m m a ry • POWER MOSFET Application Part No 2SK1976 V dss V 2SK2176 Package Typ (Q ) V gs (V) Page Id (A) 450 5 30 1.0 10 2.5 TO-220FP 88 60 10 30 0 08 10 5 TO-220FP


    OCR Scan     		PDF 2SK1976 2SK2095 2SK2176 O-220FP 2SA785 2SA790 2SA790M 2SA806 Mosfet FTR 03-E mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    transistor 667

    Abstract: No abstract text available
    Text: ^^53^31 0035133 404 APX Philips S em iconductors Product specification N AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES • L7E 1 e BFR93A PINNING PIN High power gain DESCRIPTION • Low noise figure • Very low intermodulation distortion 2


    OCR Scan     		PDF BFR93A BFT93. transistor 667

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60