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    TRANSISTOR MARK L6 Search Results

    TRANSISTOR MARK L6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54F139/BEA Rochester Electronics LLC 54F139 - Decoder/Driver, F/FAST Series, Inverted Output, TTL, CDIP16 - Dual marked (M38510/33702BEA) Visit Rochester Electronics LLC Buy
    54F151/BEA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) Visit Rochester Electronics LLC Buy
    54F151/BFA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDFP16 - Dual marked (M38510/33901BFA) Visit Rochester Electronics LLC Buy
    54F157/BEA Rochester Electronics LLC Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33903BEA) Visit Rochester Electronics LLC Buy
    54F153/BEA Rochester Electronics LLC 54F153 - Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33902BEA) Visit Rochester Electronics LLC Buy

    TRANSISTOR MARK L6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MPSH10

    Abstract: MMBTH10 Spice Model NPN power transistor spice y-parameter MMBTH10 TRANSISTOR C 3223 MPS-H10 MPSH10 s parameters
    Text: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 OT-23 MPSH10 MMBTH10 Spice Model NPN power transistor spice y-parameter MMBTH10 TRANSISTOR C 3223 MPS-H10 MPSH10 s parameters

    MPSH10 fairchild transistor

    Abstract: MMBTH10 Spice Model MPS-H10 MMBTH10 MPSH10 TRANSISTOR C 3223 1358p
    Text: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 OT-23 MPSH10 MPSH10 fairchild transistor MMBTH10 Spice Model MPS-H10 MMBTH10 TRANSISTOR C 3223 1358p

    TRANSISTOR C 3223

    Abstract: MPSH10 MMBTH10 Spice Model NPN power transistor spice MMBTH10
    Text: N MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 OT-23 MPSH10 TRANSISTOR C 3223 MMBTH10 Spice Model NPN power transistor spice MMBTH10

    mpsh10

    Abstract: MPSH10 fairchild transistor MPSH10 s parameters TF135 MMBTH10 Spice Model MPS-H10 BF308 1358p
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C C E E TO-92 B SOT-23 B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 mA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 MPSH10 OT-23 MPSH10 fairchild transistor MPSH10 s parameters TF135 MMBTH10 Spice Model MPS-H10 BF308 1358p

    MPSH10 s parameters

    Abstract: No abstract text available
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 MPSH10 OT-23 MPSH10 s parameters

    MPSH10 fairchild transistor

    Abstract: MPSH10 MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 MPSH10 OT-23 MPSH10 fairchild transistor MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223

    CBVK741B019

    Abstract: F63TNR MMBTH10 MPSH10 PN2222N PAP transistor power high frequency transistor bel 100 rf transistor mark code H1
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		PDF MPSH10 MMBTH10 MPSH10 OT-23 CBVK741B019 F63TNR MMBTH10 PN2222N PAP transistor power high frequency transistor bel 100 rf transistor mark code H1

    MPSH11

    Abstract: MPS-H11 transistor mark l6 MMBTH11 Q100 Z-235 Ohmite RF transistor x vs L1245 P4 transistor
    Text: MPSH11 MMBTH11 C E C TO-92 BE SOT-23 B Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving


    Original     		PDF MPSH11 MMBTH11 OT-23 MPSH11 MPS-H11 transistor mark l6 MMBTH11 Q100 Z-235 Ohmite RF transistor x vs L1245 P4 transistor

    transistor C 245 b

    Abstract: No abstract text available
    Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C C B E TO-92 B SOT-23 E Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 mA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		PDF MPSH11 MMBTH11 MPSH11 OT-23 transistor C 245 b

    Untitled

    Abstract: No abstract text available
    Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C E TO-92 B B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		PDF MPSH11 MMBTH11 MPSH11 OT-23 MPSH11/MMBTH11,

    transistor 26

    Abstract: MMBTH11 MPSH11 Q100 Z-235 L1245 transistor t 270
    Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C E TO-92 B B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		PDF MPSH11 MMBTH11 MPSH11 OT-23 MPSH11/MMBTH11, transistor 26 MMBTH11 Q100 Z-235 L1245 transistor t 270

    rf transistor mark code H1

    Abstract: CBVK741B019 F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 D3000
    Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		PDF MPSH11 MMBTH11 MPSH11 OT-23 rf transistor mark code H1 CBVK741B019 F63TNR MMBTH11 PN2222N Q100 Z-235 D3000

    CBVK741B019

    Abstract: F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 transistor 26
    Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		PDF MPSH11 MMBTH11 MPSH11 OT-23 CBVK741B019 F63TNR MMBTH11 PN2222N Q100 Z-235 transistor 26

    KST1623L7

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 40 5.0 100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage


    Original     		PDF KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 KST1623L4 KST1623L5 KST1623L6 KST1623L7

    transistor mark l6

    Abstract: KST1623L6 KST1623L3 KST1623L4 KST1623L5 KST1623L7 sot-23 Marking l7 SOT23 MARKING L7 marking L5 sot-23
    Text: KST1623L3/L4/L5/L6/L7 KST1623L3/L4/L5/L6/L7 Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 50 Units


    Original     		PDF KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 transistor mark l6 KST1623L6 KST1623L3 KST1623L4 KST1623L5 KST1623L7 sot-23 Marking l7 SOT23 MARKING L7 marking L5 sot-23

    L6 TRANSISTOR

    Abstract: transistor L6
    Text: EML6 / UML6N Transistors General purpose transistor isolated transistor and diode EML6 / UML6N 2SC5585 and RB521S-30 are housed independently in a EMT5 or UMT5 package. Dimensions (Unit : mm) Applications DC / DC converter Motor driver EMT5 1.6 0.5 1.0 0.5 0.5


    Original     		PDF 2SC5585 RB521S-30 200mA 200mA, 100MHz L6 TRANSISTOR transistor L6

    Untitled

    Abstract: No abstract text available
    Text: S E :M i O O N D U C T O R MPSH11 SOT-23 Mark: 3G NPN RF Transistor This device is designed for com m on-em itter low noise am plifier and m ixer applications with collector currents in the 100 |^A to 10 m A range to 300 MHz, and low frequency drift com m on-base


    OCR Scan     		PDF MPSH11 MMBTH11 MPSH11 OT-23 Z-235

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation


    OCR Scan     		PDF KST1623L3/L4/L5/L6/L7 KST1623O

    transistor A 564

    Abstract: L6 TRANSISTOR kst1623 L6 MARKING transistor L7 transistor marking l6
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t C h a ra cte ristic Sym b o l Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan     		PDF KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 KST1623L4 KST1823L5 KST1623L6 KST1623L7 KST1623L3 KST1623L4 KST1623L5 transistor A 564 L6 TRANSISTOR kst1623 L6 MARKING transistor L7 transistor marking l6

    L6 TRANSISTOR

    Abstract: transistor mark l6 transistor L7 l5 transistor MARKING l7 l4 transistor marking L6 l7 marking code L6 IC KST1623L6
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation Storage Tem perature


    OCR Scan     		PDF KST1623L3/L4/L5/L6/L7 KST1623L3 KST1623L4 KST1623L5 KST1623L6 KST1623L7 L6 TRANSISTOR transistor mark l6 transistor L7 l5 transistor MARKING l7 l4 transistor marking L6 l7 marking code L6 IC KST1623L6

    transistor mark l6

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 KST1623L4 KST1623L5 KST1623L6 KST1623L7 transistor mark l6

    laser barcode reader circuit

    Abstract: NJL5142 barcode reader circuit High resolution photo reflector NJL5161K-F1 NJL5162K focal Reflective Optical Sensor NJL5163K NJL5163K-F1 NJL5164K-F1
    Text: PRODUCT EXPLANATION Mini Reflector Plastic mold type Now¿japan Radio CoJùkL 5-1 PRODUCT EXPLANATION • 1. Structure The photo reflector with infrared light emitting diode and light detecting o,?-n^nt in a package is the sensor that detects the reflective object


    OCR Scan     		PDF NJL5161K NJL5162K NJL5161K-F1 NJL5162K-F1 NJL5163K NJL5164K NJL5163K-F1 NJL5164K-F1 NJL5165K NJL5166K laser barcode reader circuit NJL5142 barcode reader circuit High resolution photo reflector NJL5162K focal Reflective Optical Sensor

    BT816

    Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728
    Text: DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: •o OUT I N o -MA/V • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


    OCR Scan     		PDF mm/13" O-92S) BT816 TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728

    L6012

    Abstract: mark code ea1 fcd400 ST 42568 6599 a ic 37943 42568 7498 ttl
    Text: February 1995 wo Linear prel,m inary _ ML6012 3.5" R/W MOD Read Channel Front-end Processor GENERAL DESCRIPTION FEATURES The M L6012 is a BiCM O S Read channel front-end processor 1C which is one-half of the read channel chipset from M icro Linear, intended for 3.5'' Magneto-Optical


    OCR Scan     		PDF ML6012 L6012 L6013 ML6012CH 32-PIN mark code ea1 fcd400 ST 42568 6599 a ic 37943 42568 7498 ttl